WO2000031776A2 - Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region - Google Patents

Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region Download PDF

Info

Publication number
WO2000031776A2
WO2000031776A2 PCT/EP1999/008616 EP9908616W WO0031776A2 WO 2000031776 A2 WO2000031776 A2 WO 2000031776A2 EP 9908616 W EP9908616 W EP 9908616W WO 0031776 A2 WO0031776 A2 WO 0031776A2
Authority
WO
WIPO (PCT)
Prior art keywords
region
lateral
doping profile
drift region
soi
Prior art date
Application number
PCT/EP1999/008616
Other languages
French (fr)
Other versions
WO2000031776A3 (en
Inventor
Theodore Letavic
Mark Simpson
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Priority to JP2000584511A priority Critical patent/JP2002530882A/en
Priority to KR1020007008095A priority patent/KR20010034356A/en
Priority to EP99972779A priority patent/EP1050071A3/en
Publication of WO2000031776A2 publication Critical patent/WO2000031776A2/en
Publication of WO2000031776A3 publication Critical patent/WO2000031776A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical

Definitions

  • SOI Silicon-On-Insulator
  • the invention is in the field of Semiconductor-On-Insulator (SOI) devices, and relates more particularly to lateral SOI devices suitable for high-voltage applications.
  • SOI Semiconductor-On-Insulator
  • lateral thin-film SOI device includes a semiconductor substrate, a buried insulating layer on the substrate, and a lateral MOS device on the buried insulating layer, the MOS device, such as a MOSFET, including a semiconductor surface layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first, an insulated gate electrode over a channel region of the body region and insulated therefrom by an insulation region, a lateral drift region of the first conductivity type, and a drain region of the first conductivity type laterally spaced apart from the channel region by the drift region.
  • MOS device such as a MOSFET
  • FIG. 1 A device of this type is shown in Fig. 1 common to related U.S. Patents Nos. 5,246,870 (directed to a method) and 5,412,241 (directed to a device), commonly-assigned with the instant application and incorporated herein by reference.
  • the device shown in Fig. 1 of the aforementioned patents is a lateral SOI MOSFET device having various features, such as a thinned SOI layer with a linear lateral doping profile in the drift region and an overlying field plate, to enhance operation.
  • this device is an n-channel or NMOS transistor, with n-type source and drain regions, manufactured using a process conventionally referred to as NMOS technology.
  • a transistor device structure capable of high performance in a high-voltage, high-current environment, in which operating parameters, and in particular "on" resistance and breakdown voltage, are further optimized. It is therefore an object of the present invention to provide a transistor device structure capable of high-performance in a high-voltage, high-current environment. It is a further object of the invention to provide such a transistor device structure in which operating parameters such as "on" resistance and breakdown voltage are enhanced.
  • a lateral thin- film SOI device structure of the type described above in which the lateral drift region has a graded lateral doping profile, with a first portion of the lateral drift region adjacent the body region having a first substantially linearly graded lateral doping profile having a first doping profile slope, and a second portion of the lateral drift region adjacent the drain region having a second substantially linearly graded lateral doping profile having a second doping profile slope which is greater than that of the first doping profile slope.
  • the insulation region has a discontinuity in thickness at a point above the drift region and adjacent the body region, and a transition from the first doping profile slope to the second doping profile slope in the lateral drift region occurs in a region of the drift region approximately beneath the discontinuity in the insulation region.
  • the second doping profile slope is in the range of about 1.3 to 1.4 times greater than the first doping profile slope.
  • Lateral thin-film SOI devices in accordance with the present invention offer a significant improvement in that a combination of favorable performance characteristics making the devices suitable for operation in a high-voltage, high-current environment, such as low "on" resistance and high breakdown voltage, can be achieved.
  • Fig. 1 shows a simplified cross-sectional view of a lateral thin-film SOI device in accordance with a preferred embodiment of the invention
  • Fig. 2 shows a simplified graphical illustration of the doping profile in the lateral drift region of the device shown in Fig. 1.
  • a lateral thin-film SOI MOS transistor 20 includes a semiconductor substrate 22, a buried insulating layer 24, and a semiconductor surface layer 26 in which the device is fabricated.
  • the MOS transistor includes a source region 28 of one conductivity type, a body region 30 of a second, opposite conductivity type, a lateral drift region 32 of the first conductivity type and a drain region 34, also of the first conductivity type.
  • the basic device structure is completed by a gate electrode 36, insulated from the underlying semiconductor surface layer 26 by an oxide insulation region 38.
  • the MOS transistor used in the present invention may have various performance-enhancing features, such as a stepped oxide region 38A, 38B, an extended gate electrode structure forming a field plate portion 36A, and a thinned lateral drift region portion 32A, all as detailed in the aforementioned prior art, or other performance- enhancing features as desired, without departing from the spirit or scope of the invention.
  • the MOS transistor 20 may also include a surface contact region 40, in contact with source region 28, located in the body region 30 and of the same conductivity type as the body region but more highly doped.
  • the present invention is based upon the recognition that the adverse effects of the aforementioned tradeoff can be substantially reduced by providing multiple linear charge slope regions within the drift region.
  • a multiple linear charge slope doping profile is provided having at least a first slope Ml in the drift region area 32B in the vicinity of the body region 30 and beneath any discontinuities such as 38C, 38D in the insulation layer 38.
  • a second portion of the lateral drift region 32A is provided with a second doping profile slope M2 which is greater than that of the first doping profile slope Ml and extends over substantially that portion of the drift region 32A which extends beneath the portion of the insulation region 38B of constant thickness and at the drain region 34 side of the device.
  • the device of Fig. 1 is provided with a multiple linear charge slope doping profile in the drift region, resulting in improved device performance in the areas of "on" resistance breakdown voltage and saturated current flow.
  • Fig. 1 While it should be understood that the invention may be applied to various different device configurations other than the one shown in Fig. 1, such as a device with only a single step in the insulation layer, as shown for example in U.S. Patent No. 5,246,870, or in a device with multiple field plates, as in aforementioned U.S. Patent Application Serial No. 08/998,048 (in which case the change in doping profile slope may occur at a discontinuity between the field plate), as well as in a device with multiple steps in the insulation layer as shown in Fig. 1 herein, the device structure of Fig. 1 will be used by way of nonlimitative example in the following description.
  • the device of Fig. 1 maybe provided with a first doping profile slope Ml from x 0 to a distance xl approximately beneath the last discontinuity (here 38D) in insulation region thickness between 38A and 38B.
  • the transition between the first and second doping profile slope occurs approximately beneath that side of the insulation region thickness discontinuity 38D which is closer to the drain region.
  • the transition in doping profile slope may occur at a distance xl which is closer to the drain region by an amount which is approximately equal to the thickness of the insulation region 38B, so that the discontinuity in slope is somewhat spaced from the discontinuity in insulation region thickness.
  • the second doping profile slope M2 may advantageously be in the range of about 1.3 to 1.4 times greater than the first doping profile slope Ml.
  • this ratio can be achieved by a first doping profile slope of about 2.0 X 10 15 at.cm "2 /cm and second doping profile slope of about 2.6 X t c *y
  • a device which may have a minimum charge doping Qmin ranging from zero to a relatively low value such as 1 X 10 12 at.cm 2 at xO, and extending to the left from xO in Fig. 1 at this value to the edge 30A of the body region 30.
  • Qmin a minimum charge doping
  • the point X0 may be located about 2-4 microns from the edge 30A of the body region 30
  • the point xl may be located about 10 microns from xO
  • x2 may be located about 50 microns from xl, with the understanding that these are merely illustrative examples.
  • a value such as an illustrative value of 2 X 10 13 at.cm 2 , may be selected for the maximum charge doping Qmax at point x2, and the slopes M2 and Ml may be appropriately selected to achieve the desired minimum charge doping Qmin at xO.
  • the first doping profile slope Ml can be quite small, or even zero.
  • the multiple linear charge slope regions in accordance with the present invention may be fabricated using readily-apparent variations in known prior-art techniques for providing a constant-slope varying doping level in the drift region of SOI devices.
  • the present invention provides a transistor device structure capable of high-performance in a high-voltage, high-current environment, while enhancing the operating parameters of "on" resistance and breakdown voltage.

Abstract

A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region. In order to provide an optimum combination of low 'on' resistance and high breakdown voltage, the lateral drift region is provided with a graded lateral doping profile, with two substantially linearly graded drift region portions having different doping profile slopes. Specifically, the slope of the doping profile is higher in the portion of the lateral drift region adjacent the drain region than in the portion of the lateral drift region adjacent the body region.

Description

Lateral thin-film Silicon-On-Insulator (SOI) device having multiple doping profile slopes in the drift region.
The invention is in the field of Semiconductor-On-Insulator (SOI) devices, and relates more particularly to lateral SOI devices suitable for high-voltage applications.
In fabricating high-voltage power devices, tradeoffs and compromises must typically be made in areas such as breakdown voltage, size, "on" resistance and manufacturing simplicity and reliability. Frequently, improving one parameter, such as breakdown voltage, will result in the degradation of another parameter, such as "on" resistance. Ideally, such devices would feature superior characteristics in all areas, with a minimum of operational and fabrication drawbacks.
One particularly advantageous form of lateral thin-film SOI device includes a semiconductor substrate, a buried insulating layer on the substrate, and a lateral MOS device on the buried insulating layer, the MOS device, such as a MOSFET, including a semiconductor surface layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first, an insulated gate electrode over a channel region of the body region and insulated therefrom by an insulation region, a lateral drift region of the first conductivity type, and a drain region of the first conductivity type laterally spaced apart from the channel region by the drift region.
A device of this type is shown in Fig. 1 common to related U.S. Patents Nos. 5,246,870 (directed to a method) and 5,412,241 (directed to a device), commonly-assigned with the instant application and incorporated herein by reference. The device shown in Fig. 1 of the aforementioned patents is a lateral SOI MOSFET device having various features, such as a thinned SOI layer with a linear lateral doping profile in the drift region and an overlying field plate, to enhance operation. As is conventional, this device is an n-channel or NMOS transistor, with n-type source and drain regions, manufactured using a process conventionally referred to as NMOS technology.
More advanced techniques for enhancing high-voltage and high-current performance parameters of SOI power devices are shown in U.S. Patent Application Serial No. 08/998,048, filed December 24, 1997, commonly-assigned with the instant application and incorporated herein by reference. Yet another technique for improving the performance of an SOI device is to form a hybrid device, which combines more than one type of device configuration into a single structure. Thus, for example, in U.S. Patent Application Serial No. 09/122,407, filed July 24, 1998, commonly-assigned with the instant application and incorporated herein by reference, an SOI device is disclosed which includes a lateral DMOS transistor and an LIGB transistor in the same structure.
Thus, it will be apparent that numerous techniques and approaches have been used in order to enhance the performance of power semiconductor devices, in an ongoing effort to attain a more nearly optimum combination of such parameters as breakdown voltage, size, current-carrying capability and manufacturing ease. While all of the foregoing structures provide varying levels of improvement in device performance, no one device or structure fully optimizes all of the design requirements for high-voltage, high-current operation.
Accordingly, it would be desirable to have a transistor device structure capable of high performance in a high-voltage, high-current environment, in which operating parameters, and in particular "on" resistance and breakdown voltage, are further optimized. It is therefore an object of the present invention to provide a transistor device structure capable of high-performance in a high-voltage, high-current environment. It is a further object of the invention to provide such a transistor device structure in which operating parameters such as "on" resistance and breakdown voltage are enhanced.
In accordance with the invention, these objects are achieved in a lateral thin- film SOI device structure of the type described above in which the lateral drift region has a graded lateral doping profile, with a first portion of the lateral drift region adjacent the body region having a first substantially linearly graded lateral doping profile having a first doping profile slope, and a second portion of the lateral drift region adjacent the drain region having a second substantially linearly graded lateral doping profile having a second doping profile slope which is greater than that of the first doping profile slope.
In a preferred embodiment of the invention, the insulation region has a discontinuity in thickness at a point above the drift region and adjacent the body region, and a transition from the first doping profile slope to the second doping profile slope in the lateral drift region occurs in a region of the drift region approximately beneath the discontinuity in the insulation region.
In a further preferred embodiment of the invention, the second doping profile slope is in the range of about 1.3 to 1.4 times greater than the first doping profile slope.
Lateral thin-film SOI devices in accordance with the present invention offer a significant improvement in that a combination of favorable performance characteristics making the devices suitable for operation in a high-voltage, high-current environment, such as low "on" resistance and high breakdown voltage, can be achieved.
These and other aspects of the invention will be apparent from and elucidated with reference to the embodiments described hereinafter. The invention may be more completely understood with reference to the following description, to be read in conjunction with the accompanying drawing, in which:
Fig. 1 shows a simplified cross-sectional view of a lateral thin-film SOI device in accordance with a preferred embodiment of the invention; and
Fig. 2 shows a simplified graphical illustration of the doping profile in the lateral drift region of the device shown in Fig. 1.
In the drawing, semiconductor regions having the same conductivity type are generally shown hatched in the same direction in the cross-sectional views, and it should be understood that the figures are not drawn to scale.
In the simplified cross-sectional view of Fig. 1, a lateral thin-film SOI MOS transistor 20 includes a semiconductor substrate 22, a buried insulating layer 24, and a semiconductor surface layer 26 in which the device is fabricated. The MOS transistor includes a source region 28 of one conductivity type, a body region 30 of a second, opposite conductivity type, a lateral drift region 32 of the first conductivity type and a drain region 34, also of the first conductivity type. The basic device structure is completed by a gate electrode 36, insulated from the underlying semiconductor surface layer 26 by an oxide insulation region 38. Within the scope of the invention, the MOS transistor used in the present invention may have various performance-enhancing features, such as a stepped oxide region 38A, 38B, an extended gate electrode structure forming a field plate portion 36A, and a thinned lateral drift region portion 32A, all as detailed in the aforementioned prior art, or other performance- enhancing features as desired, without departing from the spirit or scope of the invention. Additionally, the MOS transistor 20 may also include a surface contact region 40, in contact with source region 28, located in the body region 30 and of the same conductivity type as the body region but more highly doped.
It will be understood that while the simplified, representative device shown in the Figure depicts a particular device structure, wide variations in both device geometry and configuration can be used within the scope of the invention.
As noted above, it has been recognized in the prior art that improved device performance, in particular with reference to the tradeoff between such parameters as breakdown voltage, "on" resistance and saturated current flow, may be obtained by providing the drift region as a thinned SOI layer with a linear lateral doping profile in the drift region. However, the use of such a linear lateral doping profile (with a single slope) still results in certain compromises in device performance. Thus, for example, to achieve minimum "on" resistance and maximum saturated current flow, it is desirable to provide the highest possible lateral doping profile slope in order to maximize the amount of charge in the drift region. However, too high a slope, particularly in the relatively lightly doped area 32B of the drift region in the vicinity of the body region and where the insulation region changes thickness results in an increased charge level in this vicinity, which can lead to breakdown in the vicinity of a discontinuity in the thickness of the insulation region, due to the relatively higher electric field in this region due to the discontinuity.
The present invention is based upon the recognition that the adverse effects of the aforementioned tradeoff can be substantially reduced by providing multiple linear charge slope regions within the drift region. Thus, as illustrated in the simplified graph of Fig. 2, which plots dopant charge Q in the drift region 32 as a function of distance, a multiple linear charge slope doping profile is provided having at least a first slope Ml in the drift region area 32B in the vicinity of the body region 30 and beneath any discontinuities such as 38C, 38D in the insulation layer 38. A second portion of the lateral drift region 32A is provided with a second doping profile slope M2 which is greater than that of the first doping profile slope Ml and extends over substantially that portion of the drift region 32A which extends beneath the portion of the insulation region 38B of constant thickness and at the drain region 34 side of the device. In this manner, the device of Fig. 1 is provided with a multiple linear charge slope doping profile in the drift region, resulting in improved device performance in the areas of "on" resistance breakdown voltage and saturated current flow.
While it should be understood that the invention may be applied to various different device configurations other than the one shown in Fig. 1, such as a device with only a single step in the insulation layer, as shown for example in U.S. Patent No. 5,246,870, or in a device with multiple field plates, as in aforementioned U.S. Patent Application Serial No. 08/998,048 (in which case the change in doping profile slope may occur at a discontinuity between the field plate), as well as in a device with multiple steps in the insulation layer as shown in Fig. 1 herein, the device structure of Fig. 1 will be used by way of nonlimitative example in the following description.
Using a point x0 (located half-way between the edge of body region 30 and the first insulation layer thickness transition 38C between 38 and 38A) the device of Fig. 1 maybe provided with a first doping profile slope Ml from x0 to a distance xl approximately beneath the last discontinuity (here 38D) in insulation region thickness between 38A and 38B. In a preferred embodiment of the invention, the transition between the first and second doping profile slope occurs approximately beneath that side of the insulation region thickness discontinuity 38D which is closer to the drain region. In a typical preferred example, the transition in doping profile slope may occur at a distance xl which is closer to the drain region by an amount which is approximately equal to the thickness of the insulation region 38B, so that the discontinuity in slope is somewhat spaced from the discontinuity in insulation region thickness.
In a preferred embodiment, the second doping profile slope M2 may advantageously be in the range of about 1.3 to 1.4 times greater than the first doping profile slope Ml. By way of nonlimitative example, this ratio can be achieved by a first doping profile slope of about 2.0 X 1015 at.cm"2/cm and second doping profile slope of about 2.6 X t c *y
10 at.cm" /cm, in a device which may have a minimum charge doping Qmin ranging from zero to a relatively low value such as 1 X 1012 at.cm2 at xO, and extending to the left from xO in Fig. 1 at this value to the edge 30A of the body region 30. Again by way of nonlimitative example, in the device of Fig. 1 the point X0 may be located about 2-4 microns from the edge 30A of the body region 30, the point xl may be located about 10 microns from xO, and x2 may be located about 50 microns from xl, with the understanding that these are merely illustrative examples. Alternatively, a value, such as an illustrative value of 2 X 1013 at.cm2, may be selected for the maximum charge doping Qmax at point x2, and the slopes M2 and Ml may be appropriately selected to achieve the desired minimum charge doping Qmin at xO. In a further preferred embodiment of the invention, the first doping profile slope Ml can be quite small, or even zero.
Finally, it will be recognized that the multiple linear charge slope regions in accordance with the present invention may be fabricated using readily-apparent variations in known prior-art techniques for providing a constant-slope varying doping level in the drift region of SOI devices.
In this manner, the present invention provides a transistor device structure capable of high-performance in a high-voltage, high-current environment, while enhancing the operating parameters of "on" resistance and breakdown voltage.
While the invention has been particularly shown and described with reference to several preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit or scope of the invention, such as providing more than two different doping profile slopes within the lateral drift region.

Claims

CLAIMS:
1. A lateral thin-film Silicon-On-Insulator (SOI) device (20) comprising a semiconductor substrate (22), a buried insulating layer (24) on said substrate, and a lateral MOS device on said buried insulating layer and having a source region (28) of a first conductivity type formed in a body region (30) of a second conductivity type opposite to that of the first, a lateral drift region (32) of said first conductivity type adjacent said body region, a drain region (34) of said first conductivity type and laterally spaced apart from said body region by said lateral drift region, and a gate electrode (36) over a part of said body region in which a channel region is formed during operation and over at least a part of said lateral drift region (32B) adjacent said body region, said gate electrode being insulated from said body region and drift region by an insulation region (38), said lateral drift region having a graded lateral doping profile, a first portion of said lateral drift region (32B) adjacent said body region having a first substantially linearly graded lateral doping profile having a first doping profile slope (Ml), and a second portion of said lateral drift region (32A) adjacent said drain region having a second substantially linearly graded lateral doping profile having a second doping profile slope (M2) which is greater than that of said first doping profile slope.
2. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 1, wherein said insulation region has a discontinuity in thickness (38D) at a point above said drift region and adjacent said body region, and a transition from said first doping profile slope to said second doping profile slope in said lateral drift region occurs in a region of said drift region approximately beneath said discontinuity (XI).
3. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 2, wherein said insulating region has a plurality of said discontinuities in thickness (38C,38D) above said drift region, and said transition occurs in a region of said drift region approximately beneath that one of said discontinuities which is located furthest from said body region (38D). o
4. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 1, wherein said second doping profile slope (M2) is in the range of about 1.3 to 1.4 times greater than said first doping profile slope (Ml).
5. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 2, wherein said second doping profile slope is in the range of about 1.3 to 1.4 times greater than said first doping profile slope.
6. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 3, wherein said second doping profile slope is in the range of about 1.3 to 1.4 times greater than said first doping profile slope.
7. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 1, wherein said first doping profile slope is about 2.0 X 10 at.cm" /cm and said second doping profile slope is about 2.6 X 1015 at.cm"2/cm.
8. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 2, wherein said first doping profile slope is about 2.0 X 10 at.cm" /cm and said second doping profile slope is about 2.6 X 1015 at.cm"2/cm.
9. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 3, wherein said first doping profile slope is about 2.0 X 10 at.cm' cm and said second doping profile slope is about 2.6 X 1015 at.cm"2/cm.
10. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 2, wherein said transition in doping profile slope occurs in a portion of said region of the drift region which is located beneath that side of said discontinuity which is closer to said drain region (XI).
11. A lateral thin-film Silicon-On-Insulator (SOI) device as in Claim 3, wherein said transition in doping profile slope occurs in a portion of said region of the drift region which is located beneath that side of said furthest discontinuity which is closer to said drain region.
PCT/EP1999/008616 1998-11-25 1999-11-03 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region WO2000031776A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000584511A JP2002530882A (en) 1998-11-25 1999-11-03 Lateral thin film silicon-on-insulator (SOI) device with multiple doping profile slope in drift region
KR1020007008095A KR20010034356A (en) 1998-11-25 1999-11-03 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region
EP99972779A EP1050071A3 (en) 1998-11-25 1999-11-03 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/200,110 US6232636B1 (en) 1998-11-25 1998-11-25 Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region
US09/200,110 1998-11-25

Publications (2)

Publication Number Publication Date
WO2000031776A2 true WO2000031776A2 (en) 2000-06-02
WO2000031776A3 WO2000031776A3 (en) 2000-09-08

Family

ID=22740375

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1999/008616 WO2000031776A2 (en) 1998-11-25 1999-11-03 Lateral thin-film silicon-on-insulator (soi) device having multiple doping profile slopes in the drift region

Country Status (6)

Country Link
US (1) US6232636B1 (en)
EP (1) EP1050071A3 (en)
JP (1) JP2002530882A (en)
KR (1) KR20010034356A (en)
TW (1) TW441111B (en)
WO (1) WO2000031776A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075980A1 (en) * 2000-03-30 2001-10-11 Koninklijke Philips Electronics N.V. A high voltage thin film transistor with improved on-state characteristics and method for making same
WO2003038905A2 (en) * 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor
WO2003038906A2 (en) * 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor and method of making the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060199A (en) * 2001-08-10 2003-02-28 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method
US6847081B2 (en) 2001-12-10 2005-01-25 Koninklijke Philips Electronics N.V. Dual gate oxide high-voltage semiconductor device
US6627958B2 (en) 2001-12-10 2003-09-30 Koninklijke Philips Electronics N.V. Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same
DE10345347A1 (en) * 2003-09-19 2005-04-14 Atmel Germany Gmbh Method of making a lateral drift region dopant profile DMOS transistor
KR100649867B1 (en) * 2005-12-14 2006-11-27 동부일렉트로닉스 주식회사 High voltage semiconductor device and method of fabricating the same
US7629649B2 (en) * 2006-05-09 2009-12-08 Atmel Corporation Method and materials to control doping profile in integrated circuit substrate material
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0497427A2 (en) * 1991-02-01 1992-08-05 Koninklijke Philips Electronics N.V. Semiconductor device for high voltage application and method of making the same
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
EP0786818A2 (en) * 1996-01-26 1997-07-30 Matsushita Electric Works, Ltd. Thin film transistor of silicon-on-insulator type
WO1997038447A2 (en) * 1996-04-10 1997-10-16 Philips Electronics N.V. High-voltage lateral mosfet soi device having a semiconductor linkup region
WO1999040614A2 (en) * 1998-02-09 1999-08-12 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with linearly doping profile

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438220A (en) 1987-02-26 1995-08-01 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5246870A (en) 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
US5578506A (en) 1995-02-27 1996-11-26 Alliedsignal Inc. Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
US5648671A (en) 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile
KR100225411B1 (en) * 1997-03-24 1999-10-15 김덕중 Ldmos transistor device and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0497427A2 (en) * 1991-02-01 1992-08-05 Koninklijke Philips Electronics N.V. Semiconductor device for high voltage application and method of making the same
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
EP0786818A2 (en) * 1996-01-26 1997-07-30 Matsushita Electric Works, Ltd. Thin film transistor of silicon-on-insulator type
WO1997038447A2 (en) * 1996-04-10 1997-10-16 Philips Electronics N.V. High-voltage lateral mosfet soi device having a semiconductor linkup region
WO1999040614A2 (en) * 1998-02-09 1999-08-12 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with linearly doping profile

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075980A1 (en) * 2000-03-30 2001-10-11 Koninklijke Philips Electronics N.V. A high voltage thin film transistor with improved on-state characteristics and method for making same
WO2003038905A2 (en) * 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor
WO2003038906A2 (en) * 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor and method of making the same
WO2003038905A3 (en) * 2001-11-01 2003-10-23 Koninkl Philips Electronics Nv Lateral soi field-effect transistor
WO2003038906A3 (en) * 2001-11-01 2004-07-29 Koninkl Philips Electronics Nv Lateral soi field-effect transistor and method of making the same

Also Published As

Publication number Publication date
WO2000031776A3 (en) 2000-09-08
EP1050071A3 (en) 2000-11-15
TW441111B (en) 2001-06-16
JP2002530882A (en) 2002-09-17
EP1050071A2 (en) 2000-11-08
KR20010034356A (en) 2001-04-25
US6232636B1 (en) 2001-05-15

Similar Documents

Publication Publication Date Title
US5973341A (en) Lateral thin-film silicon-on-insulator (SOI) JFET device
EP1133798B1 (en) Lateral thin-film silicon-on-insulator (soi) pmos device having a drain extension region
US6346451B1 (en) Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
EP1147561B1 (en) Lateral thin-film soi device having a lateral drift region and method of making such a device
EP0682811B1 (en) Lateral semiconductor-on-insulator (soi) semiconductor device having a buried diode
EP1051757B1 (en) Lateral thin-film silicon-on-insulator (soi) device having multiple zones in the drift region
EP0809864B1 (en) Lateral thin-film soi devices with linearly-grated field oxide and linear doping profile
US6028337A (en) Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region
US6232636B1 (en) Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region
EP1038308B1 (en) Lateral thin-film soi device
US6133591A (en) Silicon-on-insulator (SOI) hybrid transistor device structure
US6661059B1 (en) Lateral insulated gate bipolar PMOS device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWE Wipo information: entry into national phase

Ref document number: 1999972779

Country of ref document: EP

Ref document number: 1020007008095

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWP Wipo information: published in national office

Ref document number: 1999972779

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020007008095

Country of ref document: KR

WWW Wipo information: withdrawn in national office

Ref document number: 1999972779

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1020007008095

Country of ref document: KR