WO2000054933B1 - Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control - Google Patents

Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control

Info

Publication number
WO2000054933B1
WO2000054933B1 PCT/IB2000/000508 IB0000508W WO0054933B1 WO 2000054933 B1 WO2000054933 B1 WO 2000054933B1 IB 0000508 W IB0000508 W IB 0000508W WO 0054933 B1 WO0054933 B1 WO 0054933B1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
pad
wafer
retaining ring
carrier
Prior art date
Application number
PCT/IB2000/000508
Other languages
French (fr)
Other versions
WO2000054933A3 (en
WO2000054933A2 (en
Inventor
Huey-Ming Wang
Gerard S Moloney
Scott Chin
John J Geraghty
William Dyson Jr
Tanlin K Dickey
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/261,112 external-priority patent/US6231428B1/en
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to EP00919082A priority Critical patent/EP1091829B1/en
Priority to JP2000604992A priority patent/JP4212776B2/en
Priority to AT00919082T priority patent/ATE249909T1/en
Priority to DE60005270T priority patent/DE60005270T2/en
Publication of WO2000054933A2 publication Critical patent/WO2000054933A2/en
Publication of WO2000054933A3 publication Critical patent/WO2000054933A3/en
Publication of WO2000054933B1 publication Critical patent/WO2000054933B1/en
Priority to HK01106132A priority patent/HK1037156A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

Abstract

In one aspect the invention provides a polishing apparatus (101) including a housing (120) a carrier (160) for mounting a substrate (113) to be polished, a retaining ring (134) circumscribing the carrier (113) for retaining the substrate (113), a first coupling (162) attaching the retaining ring (134) to the carrier (160) such that the retaining ring (134) may move relative to the carrier (160), a second coupling (145) attaching the carrier (160) to the housing (120) the housing (120) and the first coupling (162) defining a first pressure chamber (131) to exert a pressure force against the retaining ring (134), and the housing (120) and the second coupling (145) defining a second pressure chamber (132) to exert a pressure force against the subcarrier (160). In one embodiment, the couplings are diaphragms. In another embodiment, the invention includes a single- or multiple-chambered wafer carrier or subcarrier capable of modifying a differential polishing pressure across the surface of the wafer or other substrate.

Claims

AMENDED CLAIMS[received by the International Bureau on 20 December 2000 (20.12.00); original claim 38 amended; new claims 39-50 added; remaining claims unchanged (9 pages)]
1. A polishing apparatus compnsing: a housing; a disc shaped earner for mounting a substrate to be polished; a retaining ring substantially circumscnbing said earner for retaining said substrate in a pocket formed by said retaining ring and a surface of said carrier; a first flexible coupling attaching said retaining ring to said carrier such that said retaming ring may translate in at least one dimension and tilt about an axis relative to said carrier; a s econd flexib le coup lmg attaching said carrier to said housing such that said earner may translate in at least one dimension and tilt about an axis relative to said housing; said housing and said first flexible coupling defining a first chamber in fluid communication with a first source of pressuπzed gas such that when gas at a first pressure is communicated to said first chamber a first force is exerted against said retaining ring; and said housing and said second flexible coupling defining a second chamber in fluid communication with a second source of pressuπzed gas such that when gas at a second pressure is communicated to said second chamber a second force is exerted against said subcarrier.
2, The polishing apparatus m Claim 1. wherem said translation and tilt of said carrier is independent of said translation and tilt of said retaining ring.
3. The polishing apparatus in Claim 1, wherein said translation and tilt of said earner is coupled to a predetermined extent with said translation and tilt of said retaining ring.
4 The polishing apparatus in Claim 1, wherein said translation and tilt of said earner and said translation and tilt of said retaining ring each have a component that is independent of the other and a component that is dependent on the other. 51
5. The polishing apparatus in Claim 4, wherem the extent to which said translation and tilt components of said earner and said ring are coupled is dependent on material characteristics of said first and second flexible couplings and geometry characteristics of said attachments.
6. The polishing apparatus in Claim 5 , wherein said material characteristics that affect the extent of coupling include elasticity, stiffness, and spring constant; and said geometry characteristics include distance between attachment locations between said ring and said carrier and distance between attachment locations between said earner and said housing; the geometry of the interface between said first and second diaphragms and adj acent structures of said housing, said retaining ring, and said carrier.
7. The polishing apparatus in Claim 1 , wherein said first pressure and said second pressure are different pressures.
8. The polishing apparatus m Claim 1 , wherein said first pressure and said second pressure are substantially equal pressures.
9. The polishing apparatus in Claim 1 , wherein said first pressure and said second pressure are substantially equal pressures and the force exerted on said retaining ring and on said carrier are determined by the surface area of said retaining ring and said carrier over which each said pressure is applied.
10. The polishing apparatus in Claim 1 , wherein said first pressure and said second pressure may independently be positive pressure or negative pressure (vacuum).
11. The polishing apparatus in Claim 10, wherein the depth of a pocket formed by a surface of said earner and an inner cylindrical surface of said retaining πng is established dunng a substrate loading phase by said first pressure and said second pressure.
12. The polishing apparatus in Claim 1, wherein said substrate compπses a semiconductor wafer. 52
13. The polishing apparatus in Claim 1, wherein said retaining ring further compnses: a lower surface for contacting an external polishing pad during polishing; an inner cylindrical surface disposed adjacent to an outer circumferential surface of said carrier and the periphery of a substrate mounting surface of said carrier, said inner cylindrical surface and said carrier mounting surface periphery forming a pocket for maintaining said substrate during polishing; and a pad conditioning member disposed at the lower outer radial portion of said retaining ring where said retaining ring contacts said pad during polishing and defining a shape profile transitioning between a first planar surface substantially parallel to a plane of said polishing pad and a second planar surface substantially perpendicular to said polishing pad.
14. The polishing apparatus of Claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to the nominal plane of said polishing pad.
15. The polishing apparatus of Claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially between 18 degrees and substantially 22 degrees out of parallel with respect to the nominal plane of said polishing pad.
16. The polishing apparatus of Claim 13, wherein said pad conditioning member is charactenzed by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad.
17. The polishing apparatus of Claim 13, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad; and further characterized by presenting a second angle of substantially 70 degrees out of parallel with respect to the nominal plane of said polishing pad. 53
18. The polishing apparatus of Claim 13, further characterized in that said portion presenting a substantially 20 degree angle extends a distance of between 0.03 and 0.04 inches from said lower planar retaining πng surface, and said portion presenting a substantially 70 degree angle extends to at least a distance of about 0.2
5 inches from said lower planar retaining ring surface
19. The polishing apparatus of Claim 13, wherein said pad conditioning member is charactenzed by- presenting an angle substantially between 15 degrees and substantially
10 25 degrees out of parallel with respect to a nominal plane of said polishing pad; and presenting a second substantially between 65 degrees and substantially 75 degrees out of parallel with respect to said nominal plane of said polishing pad.
20. The polishing apparatus in Claim 1, wherein said first pressure on said 15 arner is in the range between substantially 1.5 psi and substantially 10 psi and the second pressure on said retaining ring is in the range between substantially 1.5 psi and substantially 9 0 psi.
21. The polishing apparatus in Claim 1, wherem said flexible coupling 20 compnses a diaphragm.
22 The polishing apparatus in Claim 1, wherein said diaphragm is formed from a mateπal selected from the group consistmg of: metal, plastic, rubber, polymer, titanium, stamless-steel, carbon fibre composite, and combinations thereof
25
23 The polishing apparatus in Claim 1 , wherem said earner is formed from ceramic matenal.
24 A substrate retaining nng for a polishing machine, said retaining πng 30 compnsing: a lower surface for contacting an external polishing pad dunng polishing, an inner cylindπcal surface disposed adjacent to an outer circumferential surface of said earner and the penphery of a substrate mounting surface of said earner, 54
said inner cylindrical surface and said earner mounting surface periphery forming a pocket for maintaining said substrate during polishing; and a pad conditioning member disposed at the lower outer radial portion of said retaining ring where said retaining ring contacts said pad during polishing and defining a shape profile transitioning between a first planar surface substantially parallel to a plane of said polishing pad and a second planar surface substantially perpendicular to said polishing pad.
25. The substrate retaining πng of Claim 24, wherein said pad conditioning member is charactenzed by presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to the nominal plane of said polishing pad.
26. The polishing apparatus of Claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially between 18 degrees and substantially 22 degrees out of parallel with respect to the nominal plane of said polishing pad.
27. The substrate retaining πng of Claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad.
28. The substrate retaining ring of Claim 24, wherein said pad conditioning member is characterized by presenting an angle substantially 20 degrees out of parallel with respect to the nominal plane of said polishing pad; and further characterized by presenting a second angle of substantially 70 degrees out of parallel with respect to the nominal plane of said polishing pad.
29. The substrate retaining πng of Claim 24, further characterized in that said portion presenting a substantially 20 degree angle extends a distance of between 0.03 and 0.04 inches from said lower planar^ retaining nng surface, and said portion presenting a substantially 70 degree angle extends to at least a distance of atonal Q~.2 - inches from said lower planar retaining πng surface 55
30. The substrate retaining ring of Claim 24, wherein said pad conditioning member is characterized by: presenting an angle substantially between 15 degrees and substantially 25 degrees out of parallel with respect to a nominal plane of said polishing pad; and 5 presenting a second substantially between 65 degrees and substantially
75 degrees out of parallel with respect to said nominal plane of said polishing pad.
31. A method of planarizing a semiconductor wafer, said method including: supporting a back-side surface of said wafer with a wafer support subcarrier, l o applying a polishing force against said support subcamer to press a front surface of said wafer against a polishing pad; restraining movement of said wafer from said support subcarrier during polishing with a retaining ring circumferentially disposed around a portion of said subcarrier and said wafer; and 15 applying a pad conditioning force against said retaining ring to press a front surface of said retaining ring against said polishing pad.
32. The method in Claim 31 , wherein said pad conditioning force is applied independently of said polishing force.
20
33. The method in Claim 31 , wherein said pad conditioning force is coupled to said polishing force.
34. The method in Claim 31 , wherem said pad conditioning force is applied 25 to a first area of said pad in a direction orthogonal to a plane defined by said pad surface, to a second area of said pad in a direction having a first fractional component orthogonal to said plane and having a second fractional component parallel to said plane.
35. An article of manufacture compnsing a semiconductor wafer polished 30 according to the method of Claim 31
36. An article of manufacture comprising a semiconductor wafer planarized according to the method of Claim 34.
37. The polishing apparatus in Claim 1, wherein said disc shaped carrier further comprises: at least one cavity formed into a wafer mounting surface of said carrier; a fluid commumcation channel extending from said at least one cavity to an 5 external source of pressurize fluid; said wafer mounting surface adapted to receive i flexible membrane, said membrane covering said at least one cavity to form a third chamber capable of holding a pressure when said pressurized fluid is communicated from said external source of pressurized fluid to said at least one cavity; and l o said membrane expanding when said pressurized fluid is communicated to said third chamber and exerting a force on a wafer mounted between said membrane and an external polishing pad during polishing.
38. A semiconductor wafer carrier for holding a semiconductor wafer during 15 a planarization operation, said wafer carrier comprising: a disk-shaped block of substantially non-porous material having a first surface for mounting said semiconductor wafer, a second surface, and a third substantially cylindrical surface connecting said first and second surfaces; said first surface being substantially planar except for at least one cavity 20 extending over a first annular region having a first annular width near said third cylindrical surface to a first depth from said substantially planar first surface into an interior portion of said wafer carrier; a fluid communication channel extending from said cavity to either said second surface or to said third surface to communicate a pressurized fluid from an external 25 source of pressurized fluid to said cavity; said first surface adapted to receive a flexible membrane to cover said cavity and form a chamber capable of holding a pressure when said pressurized fluid is communicated from said external source of pressurized fluid to said cavity, and said membrane expanding when said preεsunzed fluid is communicated to said 0 third chamber and exerting a force on said semiconductor wafer near an annular edge portion of said wafer mounted to said first surface and to said membrane. 57
39. The semiconductor wafer carrier of any of claims 38, wherein said third chamber defines an edge transition chamber and said force exerted by said edge transition chamber is applied only to an edge area of said semiconductor wafer.
40. The semiconductor wafer carrier of claim 38, wherein said first surface further including at least a second cavity extending over a second annular region having a second annular width near said third cylindπcal surface to a second depth from said substantially planar first surface into an interior portion of said wafer earner.
41 The semiconductor wafer earner of claim 38, wherein a volume of fluid injected into said third chamber is adjusted to control the amount of material removed from said wafer to achieve a more uniform plananzed wafer surface.
42. The semiconductor wafer carrier of claim 38, wherein the pressure applied to said third chamber is adjusted to control the amount of material removed from said wafer to achieve a more uniform planarized wafer surface.
43 The semiconductor wafer earner of claim 41 or 42, wherein said adjustment mcreases the amount of material removed from said edge region of said wafer.
44. The semiconductor wafer earner of claim 41 or 42, wherein said adjustment decreases the amount of matenal removed from said edge region of said wafer.
45. The semiconductor wafer earner of claim 40, wherein said first and said second cavity share a common pressure source.
46. The semiconductor wafer earner of claim 40, wherein said first and said second cavity have different and substantially independent pressure sources.
47 The semiconductor wafer earner of claim 40, wherein said first and said second cavities provide an adjustable polishing force profile and different material 58
removal rates to be provided at different radial distances from the center to the edge of the wafer.
48. The semiconductor wafer earner of claim 40, wherein said cavity has dimensions of between about one-twenty- fifth of an inch and about one-tenth of an inch deep and between about one-tenth of an inch and one-half inch in width.
49. The semiconductor wafer earner of claim 40, wherein said cavity has a depth of between substantially 1 mm and substantially 2 mm deep.
50. The semiconductor wafer carrier of claim 40, wherein said cavity has a depth of between substantially 0.5 mm and substantially 5 mm deep.
PCT/IB2000/000508 1999-03-03 2000-02-24 Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control WO2000054933A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP00919082A EP1091829B1 (en) 1999-03-03 2000-02-24 Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control
JP2000604992A JP4212776B2 (en) 1999-03-03 2000-02-24 Chemical mechanical polishing head
AT00919082T ATE249909T1 (en) 1999-03-03 2000-02-24 CARRIER DEVICE FOR A CHEMICAL-MECHANICAL POLISHING DEVICE, COMPRISING A HOLDER RING AND A CARRIER PLATE WITH MULTI-ZONE PRESSURE CONTROL DEVICE
DE60005270T DE60005270T2 (en) 1999-03-03 2000-02-24 SUPPORT DEVICE FOR A CHEMICAL-MECHANICAL POLISHING DEVICE, WITH A HOLDING RING AND A SUPPORT PLATE WITH MULTI-ZONE PRESSURE CONTROL DEVICE
HK01106132A HK1037156A1 (en) 1999-03-03 2001-08-29 Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/261,112 US6231428B1 (en) 1999-03-03 1999-03-03 Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
US09/261,112 1999-03-03
US09/294,547 US6309290B1 (en) 1999-03-03 1999-04-19 Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control
US09/294,547 1999-04-19
US09/390,142 1999-09-03
US09/390,142 US6368189B1 (en) 1999-03-03 1999-09-03 Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure

Publications (3)

Publication Number Publication Date
WO2000054933A2 WO2000054933A2 (en) 2000-09-21
WO2000054933A3 WO2000054933A3 (en) 2001-01-25
WO2000054933B1 true WO2000054933B1 (en) 2001-03-01

Family

ID=27401376

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/IB2000/000508 WO2000054933A2 (en) 1999-03-03 2000-02-24 Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control
PCT/IB2000/000513 WO2000051782A1 (en) 1999-03-03 2000-03-01 Apparatus and method for chemical-mechanical polishing (cmp) using a head having direct pneumatic wafer polishing pressure system

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/000513 WO2000051782A1 (en) 1999-03-03 2000-03-01 Apparatus and method for chemical-mechanical polishing (cmp) using a head having direct pneumatic wafer polishing pressure system

Country Status (8)

Country Link
US (3) US6368189B1 (en)
EP (5) EP1837122B1 (en)
JP (3) JP4212776B2 (en)
AT (3) ATE249909T1 (en)
DE (3) DE60005270T2 (en)
HK (1) HK1037156A1 (en)
TW (2) TWI243084B (en)
WO (2) WO2000054933A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11850703B2 (en) 2003-11-13 2023-12-26 Applied Materials, Inc. Method of forming retaining ring with shaped surface

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US6776692B1 (en) * 1999-07-09 2004-08-17 Applied Materials Inc. Closed-loop control of wafer polishing in a chemical mechanical polishing system
US6206768B1 (en) * 1999-07-29 2001-03-27 Chartered Semiconductor Manufacturing, Ltd. Adjustable and extended guide rings
US7140956B1 (en) 2000-03-31 2006-11-28 Speedfam-Ipec Corporation Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
US6390905B1 (en) * 2000-03-31 2002-05-21 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
JP3816297B2 (en) * 2000-04-25 2006-08-30 株式会社荏原製作所 Polishing equipment
TW579319B (en) * 2000-05-12 2004-03-11 Multi Planar Technologies Inc System and method for CMP head having multi-pressure annular zone subcarrier material removal control
US6808443B2 (en) * 2000-07-01 2004-10-26 Lam Research Corporation Projected gimbal point drive
TWI246448B (en) * 2000-08-31 2006-01-01 Multi Planar Technologies Inc Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby
JP2002187060A (en) 2000-10-11 2002-07-02 Ebara Corp Substrate holding device, polishing device and grinding method
JP4620072B2 (en) * 2000-10-11 2011-01-26 株式会社荏原製作所 Polishing device
JP2008188767A (en) * 2000-10-11 2008-08-21 Ebara Corp Substrate holding apparatus
CN1260778C (en) * 2000-12-04 2006-06-21 株式会社荏原制作所 Substrate processing method
US6863771B2 (en) * 2001-07-25 2005-03-08 Micron Technology, Inc. Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US6746318B2 (en) * 2001-10-11 2004-06-08 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
SG101493A1 (en) * 2001-10-17 2004-01-30 Yi Hsu Hung Wafer retaining ring
US6628886B2 (en) * 2002-01-04 2003-09-30 Iphotonics, Inc. Integrated processing system for optical devices
US6817102B2 (en) * 2002-04-23 2004-11-16 David Harris Trimmer head
US20060180486A1 (en) * 2003-04-21 2006-08-17 Bennett David W Modular panel and storage system for flat items such as media discs and holders therefor
US6964597B2 (en) * 2003-06-27 2005-11-15 Khuu's Inc. Retaining ring with trigger for chemical mechanical polishing apparatus
US20050070205A1 (en) * 2003-09-30 2005-03-31 Speedfam-Ipec Corporation Integrated pressure control system for workpiece carrier
US11260500B2 (en) 2003-11-13 2022-03-01 Applied Materials, Inc. Retaining ring with shaped surface
US7033252B2 (en) * 2004-03-05 2006-04-25 Strasbaugh Wafer carrier with pressurized membrane and retaining ring actuator
US7063604B2 (en) * 2004-03-05 2006-06-20 Strasbaugh Independent edge control for CMP carriers
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US6986359B2 (en) * 2004-03-09 2006-01-17 Mks Instruments, Inc. System and method for controlling pressure in remote zones
JP4583207B2 (en) * 2004-03-31 2010-11-17 不二越機械工業株式会社 Polishing equipment
US7249992B2 (en) * 2004-07-02 2007-07-31 Strasbaugh Method, apparatus and system for use in processing wafers
JP4273056B2 (en) * 2004-08-12 2009-06-03 不二越機械工業株式会社 Polishing equipment
EP2797109B1 (en) * 2004-11-01 2018-02-28 Ebara Corporation Polishing apparatus
US20070026772A1 (en) * 2005-07-28 2007-02-01 Dolechek Kert L Apparatus for use in processing a semiconductor workpiece
JP4814677B2 (en) 2006-03-31 2011-11-16 株式会社荏原製作所 Substrate holding device and polishing device
US20070246839A1 (en) * 2006-04-21 2007-10-25 Applied Materials, Inc. Method of proximity pin manufacture
JP2007307623A (en) * 2006-05-16 2007-11-29 Elpida Memory Inc Polishing device
JP5009101B2 (en) * 2006-10-06 2012-08-22 株式会社荏原製作所 Substrate polishing equipment
US7654888B2 (en) * 2006-11-22 2010-02-02 Applied Materials, Inc. Carrier head with retaining ring and carrier ring
US7575504B2 (en) * 2006-11-22 2009-08-18 Applied Materials, Inc. Retaining ring, flexible membrane for applying load to a retaining ring, and retaining ring assembly
JP4534165B2 (en) 2006-12-18 2010-09-01 エルピーダメモリ株式会社 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
US20090124183A1 (en) * 2007-02-28 2009-05-14 Edgar Carballo Pneumatic adjustable sanding device
KR101057228B1 (en) * 2008-10-21 2011-08-16 주식회사 엘지실트론 Pressurized head of mirror polishing device
US8560111B2 (en) * 2008-12-31 2013-10-15 Stmicroelectronics, Inc. Method of determining pressure to apply to wafers during a CMP
JP5392483B2 (en) * 2009-08-31 2014-01-22 不二越機械工業株式会社 Polishing equipment
KR101160266B1 (en) * 2009-10-07 2012-06-27 주식회사 엘지실트론 Wafer support member, method for manufacturing the same and wafer polishing unit
JP4927962B2 (en) * 2010-01-21 2012-05-09 株式会社クレハ Workpiece holding ring for polishing equipment
JP5648954B2 (en) 2010-08-31 2015-01-07 不二越機械工業株式会社 Polishing equipment
KR101196652B1 (en) 2011-05-31 2012-11-02 주식회사 케이씨텍 Membrane assembly in carrier head
WO2013001719A1 (en) * 2011-06-29 2013-01-03 信越半導体株式会社 Polishing head and polishing apparatus
WO2013039608A2 (en) * 2011-09-12 2013-03-21 Applied Materials, Inc. Carrier head with composite plastic portions
TWI674171B (en) * 2012-01-31 2019-10-11 日商荏原製作所股份有限公司 Substrate holding device, polishing device, and polishing method
KR101597870B1 (en) * 2012-04-02 2016-02-25 강준모 Carrier head for chemical mechanical polishing system
US8998676B2 (en) 2012-10-26 2015-04-07 Applied Materials, Inc. Retaining ring with selected stiffness and thickness
WO2014183091A1 (en) * 2013-05-09 2014-11-13 Lawrence Baker Blade sharpening system for a log saw machine
US9662761B2 (en) * 2013-12-02 2017-05-30 Ebara Corporation Polishing apparatus
JP2015196224A (en) * 2014-04-01 2015-11-09 株式会社フジミインコーポレーテッド Polishing method and retainer
CN105127890A (en) * 2015-06-10 2015-12-09 上海新傲科技股份有限公司 Polishing head
JP6392193B2 (en) * 2015-10-14 2018-09-19 株式会社荏原製作所 Substrate holding device, substrate polishing device, and method of manufacturing substrate holding device
JP2018001290A (en) * 2016-06-28 2018-01-11 株式会社ディスコ Machining device
SG11201901352XA (en) 2016-09-15 2019-04-29 Applied Materials Inc Chemical mechanical polishing smart ring
US11179823B2 (en) 2016-10-28 2021-11-23 Ebara Corporation Substrate holding apparatus, elastic membrane, polishing apparatus, and method for replacing elastic membrane
JP6833591B2 (en) * 2016-10-28 2021-02-24 株式会社荏原製作所 Substrate holding device, elastic film, polishing device, and how to replace the elastic film
CN108240612B (en) * 2018-01-11 2020-01-31 深圳市百欧森环保科技股份有限公司 quick-release and easy-maintenance structure for plasma lamp tube
CN108098555B (en) * 2018-02-09 2023-08-22 佛山市东信机械有限公司 Curved surface polishing machine
JP7117171B2 (en) * 2018-06-20 2022-08-12 株式会社荏原製作所 Polishing apparatus, polishing method, and polishing control program
CN110411344B (en) * 2019-08-06 2021-07-20 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） Calibration method, calibration device, calibration system and electronic equipment
CN111168561B (en) * 2019-12-26 2022-05-13 西安奕斯伟材料科技有限公司 Polishing head and wafer polishing device
CN115151376A (en) * 2020-07-08 2022-10-04 应用材料公司 Multi-tooth magnetic control retaining ring
CN113752159B (en) * 2021-08-21 2022-11-15 浙江晶盛机电股份有限公司 Polishing carrier capable of measuring thickness on line
CN113829233B (en) * 2021-08-21 2023-07-18 浙江晶盛机电股份有限公司 Polishing carrier
CN115302403B (en) * 2021-12-16 2023-04-21 清华大学 Bearing head for chemical mechanical polishing and polishing equipment
CN114718767B (en) * 2022-03-31 2023-06-23 西安航天动力研究所 Double-path sealing bolt type injector assembly test method
CN115091359B (en) * 2022-05-26 2023-09-05 浙江晶盛机电股份有限公司 polishing carrier
CN115431169B (en) * 2022-08-24 2023-09-01 中国电子科技集团公司第十三研究所 Vacuum connection conversion device, slide polishing method and polishing machine
CN115847263B (en) * 2022-12-01 2023-11-03 张家港杰茂铝业有限公司 Aluminum profile surface polishing equipment
CN117245542B (en) * 2023-11-17 2024-01-23 苏州博宏源机械制造有限公司 Wafer double-sided polishing equipment and process

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR557656A (en) 1922-10-20 1923-08-13 Method and device for cleaning large-area sand filters
US3579916A (en) 1968-11-15 1971-05-25 Speedfam Corp Polishing machine
US3631634A (en) 1970-01-26 1972-01-04 John L Weber Polishing machine
US3841028A (en) 1972-08-24 1974-10-15 Crane Packing Co Apparatus for handling workpieces to be polished
JPS5911423B2 (en) 1974-04-10 1984-03-15 株式会社日立製作所 wrapping device
US4081928A (en) 1974-05-16 1978-04-04 Texas Instruments Incorporated Silicon slice carrier block and plug assembly
DK276678A (en) 1977-06-28 1978-12-29 Woellner Werke ADHESIVE CONTAINING FINE DISTRIBUTED INORGAN POWDER AND ORGANIC POLYMERS
JPS5943051B2 (en) 1977-10-26 1984-10-19 日本原子力研究所 Plastic surface treatment agent
DE2809274A1 (en) 1978-03-03 1979-09-13 Wacker Chemitronic PROCESS FOR COMPARISON OF POLISHING REMOVAL FROM DISCS DURING POLISHING
JPS55157473A (en) 1979-05-22 1980-12-08 Nippon Telegr & Teleph Corp <Ntt> Polishing method
US4270314A (en) 1979-09-17 1981-06-02 Speedfam Corporation Bearing mount for lapping machine pressure plate
US4519168A (en) 1979-09-18 1985-05-28 Speedfam Corporation Liquid waxless fixturing of microsize wafers
US4316757A (en) 1980-03-03 1982-02-23 Monsanto Company Method and apparatus for wax mounting of thin wafers for polishing
JPS56146667A (en) 1980-04-18 1981-11-14 Hitachi Ltd Mirror surface grinder
JPS5879216A (en) 1981-11-06 1983-05-13 Hitachi Ltd Two beam scanning optical system
JPS5919671A (en) 1982-07-22 1984-02-01 Disco Abrasive Sys Ltd Polishing device
JPS60129522A (en) 1983-12-15 1985-07-10 Shimizu Constr Co Ltd Preventive device of stack rain
JPS6152967A (en) 1984-08-22 1986-03-15 Nippon Kokan Kk <Nkk> Casting method in continuous casting
JPS61193781A (en) 1985-02-20 1986-08-28 Akira Hina Automatic manufacturing machine for welded h-steel or t-steel
US4680893A (en) 1985-09-23 1987-07-21 Motorola, Inc. Apparatus for polishing semiconductor wafers
JPH0775825B2 (en) 1986-01-07 1995-08-16 東芝機械株式会社 Single side polishing machine
US4918870A (en) 1986-05-16 1990-04-24 Siltec Corporation Floating subcarriers for wafer polishing apparatus
JP2552306B2 (en) 1987-09-30 1996-11-13 東芝機械株式会社 Single side polishing machine
US4918869A (en) * 1987-10-28 1990-04-24 Fujikoshi Machinery Corporation Method for lapping a wafer material and an apparatus therefor
WO1989007508A1 (en) 1988-02-17 1989-08-24 Gruzinsky Politekhnichesky Institut Imeni V.I.Leni Method and cassette for abrasive machining of the surface of parts
JPH01216768A (en) 1988-02-25 1989-08-30 Showa Denko Kk Method and device for polishing semiconductor substrate
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5205082A (en) * 1991-12-20 1993-04-27 Cybeq Systems, Inc. Wafer polisher head having floating retainer ring
US5216843A (en) 1992-09-24 1993-06-08 Intel Corporation Polishing pad conditioning apparatus for wafer planarization process
US5635083A (en) 1993-08-06 1997-06-03 Intel Corporation Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate
US5554064A (en) 1993-08-06 1996-09-10 Intel Corporation Orbital motion chemical-mechanical polishing apparatus and method of fabrication
US5443416A (en) 1993-09-09 1995-08-22 Cybeq Systems Incorporated Rotary union for coupling fluids in a wafer polishing apparatus
JP2891068B2 (en) * 1993-10-18 1999-05-17 信越半導体株式会社 Wafer polishing method and polishing apparatus
US5624299A (en) 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
US5643053A (en) 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
US5582534A (en) 1993-12-27 1996-12-10 Applied Materials, Inc. Orbital chemical mechanical polishing apparatus and method
US5820448A (en) 1993-12-27 1998-10-13 Applied Materials, Inc. Carrier head with a layer of conformable material for a chemical mechanical polishing system
US5547417A (en) 1994-03-21 1996-08-20 Intel Corporation Method and apparatus for conditioning a semiconductor polishing pad
JPH0811055A (en) * 1994-06-28 1996-01-16 Sony Corp Polishing device, holding method and holding structure of material to be polished in polishing device
US5651724A (en) * 1994-09-08 1997-07-29 Ebara Corporation Method and apparatus for polishing workpiece
JPH08218783A (en) * 1995-02-17 1996-08-27 Kajima Corp Exchange method of tail seal in shield machine
JP3158934B2 (en) 1995-02-28 2001-04-23 三菱マテリアル株式会社 Wafer polishing equipment
US5775983A (en) 1995-05-01 1998-07-07 Applied Materials, Inc. Apparatus and method for conditioning a chemical mechanical polishing pad
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
US6024630A (en) 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US5681215A (en) 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5738574A (en) 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
JP3129172B2 (en) * 1995-11-14 2001-01-29 日本電気株式会社 Polishing apparatus and polishing method
GB2307432B (en) 1995-11-21 1999-05-26 Rolls Royce & Ass A sample removing tool
ATE228915T1 (en) 1996-01-24 2002-12-15 Lam Res Corp SEMICONDUCTIVE DISC POLISHING HEAD
JPH09225819A (en) 1996-02-21 1997-09-02 Shin Etsu Handotai Co Ltd Holding mechanism for workpiece
US5679065A (en) * 1996-02-23 1997-10-21 Micron Technology, Inc. Wafer carrier having carrier ring adapted for uniform chemical-mechanical planarization of semiconductor wafers
JP3133249B2 (en) * 1996-02-26 2001-02-05 株式会社東芝 Nuclear power plant
JP3106418B2 (en) * 1996-07-30 2000-11-06 株式会社東京精密 Polishing equipment
US6183354B1 (en) 1996-11-08 2001-02-06 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US5941758A (en) * 1996-11-13 1999-08-24 Intel Corporation Method and apparatus for chemical-mechanical polishing
US5716258A (en) * 1996-11-26 1998-02-10 Metcalf; Robert L. Semiconductor wafer polishing machine and method
JP3784477B2 (en) * 1996-12-06 2006-06-14 株式会社荏原製作所 Wafer polishing apparatus and wafer holding head used therefor
DE19651761A1 (en) 1996-12-12 1998-06-18 Wacker Siltronic Halbleitermat Method and device for polishing semiconductor wafers
US5851140A (en) * 1997-02-13 1998-12-22 Integrated Process Equipment Corp. Semiconductor wafer polishing apparatus with a flexible carrier plate
US6019670A (en) * 1997-03-10 2000-02-01 Applied Materials, Inc. Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system
US5857899A (en) * 1997-04-04 1999-01-12 Ontrak Systems, Inc. Wafer polishing head with pad dressing element
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
EP0881039B1 (en) * 1997-05-28 2003-04-16 Tokyo Seimitsu Co.,Ltd. Wafer polishing apparatus with retainer ring
DE19755975A1 (en) * 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Semiconductor wafer holder suitable also for other flat workpieces
US6116992A (en) * 1997-12-30 2000-09-12 Applied Materials, Inc. Substrate retaining ring
US6113480A (en) * 1998-06-02 2000-09-05 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for polishing semiconductor wafers and method of testing same
US6413459B1 (en) * 1998-08-05 2002-07-02 Micron Technology, Inc. Method for handling and processing microelectronic-device substrate assemblies
US6093089A (en) * 1999-01-25 2000-07-25 United Microelectronics Corp. Apparatus for controlling uniformity of polished material
US6368189B1 (en) 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
US6077151A (en) * 1999-05-17 2000-06-20 Vlsi Technology, Inc. Temperature control carrier head for chemical mechanical polishing process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11850703B2 (en) 2003-11-13 2023-12-26 Applied Materials, Inc. Method of forming retaining ring with shaped surface

Also Published As

Publication number Publication date
TWI243084B (en) 2005-11-11
DE60005270D1 (en) 2003-10-23
US7029382B2 (en) 2006-04-18
EP1837122B1 (en) 2009-12-02
JP2002539620A (en) 2002-11-19
EP1091829B1 (en) 2003-09-17
EP1437197A1 (en) 2004-07-14
EP1075351A1 (en) 2001-02-14
EP1091829A2 (en) 2001-04-18
ATE268247T1 (en) 2004-06-15
JP2004048082A (en) 2004-02-12
TW534850B (en) 2003-06-01
HK1037156A1 (en) 2002-02-01
WO2000054933A3 (en) 2001-01-25
DE60029490D1 (en) 2006-08-31
EP1371449A3 (en) 2004-04-21
US6368189B1 (en) 2002-04-09
EP1837122A2 (en) 2007-09-26
EP1837122A3 (en) 2007-10-17
DE60029490T2 (en) 2007-02-08
EP1371449A2 (en) 2003-12-17
ATE333342T1 (en) 2006-08-15
JP4212776B2 (en) 2009-01-21
WO2000054933A2 (en) 2000-09-21
DE60005270T2 (en) 2004-09-30
US7311586B2 (en) 2007-12-25
EP1075351B1 (en) 2004-06-02
EP1437197B1 (en) 2006-07-19
ATE249909T1 (en) 2003-10-15
JP2002538611A (en) 2002-11-12
WO2000051782A1 (en) 2000-09-08
US20060128277A1 (en) 2006-06-15
DE60011193D1 (en) 2004-07-08
DE60011193T2 (en) 2005-07-07
WO2000051782B1 (en) 2001-05-25
US20020077045A1 (en) 2002-06-20
JP3595266B2 (en) 2004-12-02

Similar Documents

Publication Publication Date Title
WO2000054933B1 (en) Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control
US6776694B2 (en) Methods for carrier head with multi-part flexible membrane
US6979250B2 (en) Carrier head with flexible membrane to provide controllable pressure and loading area
US7014535B2 (en) Carrier head having low-friction coating and planarizing machine using same
EP1029633B1 (en) Carrier head with controllable pressure and loading area for chemical mechanical polishing
US6056632A (en) Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head
US20040259476A1 (en) Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece
US9199354B2 (en) Flexible diaphragm post-type floating and rigid abrading workholder
EP1197292A3 (en) Substrate holding apparatus
JPH0919863A (en) Fluid pressure control type wafer polishing head
WO2001072473A2 (en) Carrier head with controllable edge pressure
US6872130B1 (en) Carrier head with non-contact retainer
US6171513B1 (en) Chemical-mechanical polishing system having a bi-material wafer backing film and two-piece wafer carrier
US6447379B1 (en) Carrier including a multi-volume diaphragm for polishing a semiconductor wafer and a method therefor
EP0947288A3 (en) Carrier and CMP apparatus
US6283834B1 (en) Diaphragm-support disc for a polishing machine and method of operating a polishing machine
WO2002002273A2 (en) Carrier head with reduced moment wear ring
US6729946B2 (en) Polishing apparatus
JP4122103B2 (en) Wafer polishing equipment
KR100609843B1 (en) Wafer polishing apparatus
US6443820B2 (en) Polishing apparatus
KR940004678B1 (en) Holding device for polishing optical element
EP1125686B1 (en) Work holding disc for polishing, work polishing apparatus, and work polishing method
US6074288A (en) Modified carrier films to produce more uniformly polished substrate surfaces
US6344414B1 (en) Chemical-mechanical polishing system having a bi-material wafer backing film assembly

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWE Wipo information: entry into national phase

Ref document number: 2000919082

Country of ref document: EP

Ref document number: 1020007012236

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

AK Designated states

Kind code of ref document: B1

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: B1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

B Later publication of amended claims
WWP Wipo information: published in national office

Ref document number: 2000919082

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020007012236

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1020007012236

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 2000919082

Country of ref document: EP