WO2000060917A3 - Bi-modal abrasive slurries for planarization - Google Patents

Bi-modal abrasive slurries for planarization Download PDF

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Publication number
WO2000060917A3
WO2000060917A3 PCT/US2000/009156 US0009156W WO0060917A3 WO 2000060917 A3 WO2000060917 A3 WO 2000060917A3 US 0009156 W US0009156 W US 0009156W WO 0060917 A3 WO0060917 A3 WO 0060917A3
Authority
WO
WIPO (PCT)
Prior art keywords
solution
abrasive particles
flow
type
treated
Prior art date
Application number
PCT/US2000/009156
Other languages
French (fr)
Other versions
WO2000060917A2 (en
Inventor
Guy F Hudson
Original Assignee
Micron Technology Inc
Guy F Hudson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Guy F Hudson filed Critical Micron Technology Inc
Priority to AU43321/00A priority Critical patent/AU4332100A/en
Publication of WO2000060917A2 publication Critical patent/WO2000060917A2/en
Publication of WO2000060917A3 publication Critical patent/WO2000060917A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions

Abstract

A method and apparatus for making and using slurries for planarizing microelectronic-device substrate assemblies (12) in mechanical and/or chemical-mechanical planarization processes. In one aspect of the invention, a bi-modal slurry is fabricated by removing a first type of selected abrasive particles (216a) from a first abrasive particle solution (212) to form a treated flow of the first solution. The treated flow of the first solution is then combined with a flow of a second solution (222) having a plurality of second abrasive particles (226). The abrasive particles of the first type (216a) are accordingly removed from the first solution (212) separately from the second solution (222) such that the second abrasive particles (226) in the second solution (222) do not affect the removal of the abrasive particles of the first type (216a) from the first solution (212). In another aspect of the invention, a second type of selected abrasive particles are removed from the second solution prior to mixing with the first solution. Thus, by combining the treated flow of the first solution with either the treated or untreated flow of the second solution, a single flow of an abrasive slurry is produced having a first distribution (280) of the first abrasive particles about a first mode (282) and a second distribution (290) of the second abrasive particles about a second mode (292).
PCT/US2000/009156 1999-04-09 2000-04-06 Bi-modal abrasive slurries for planarization WO2000060917A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU43321/00A AU4332100A (en) 1999-04-09 2000-04-06 Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/289,790 1999-04-09
US09/289,790 US6407000B1 (en) 1999-04-09 1999-04-09 Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies

Publications (2)

Publication Number Publication Date
WO2000060917A2 WO2000060917A2 (en) 2000-10-19
WO2000060917A3 true WO2000060917A3 (en) 2001-01-11

Family

ID=23113112

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/009156 WO2000060917A2 (en) 1999-04-09 2000-04-06 Bi-modal abrasive slurries for planarization

Country Status (3)

Country Link
US (5) US6407000B1 (en)
AU (1) AU4332100A (en)
WO (1) WO2000060917A2 (en)

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US6599836B1 (en) * 1999-04-09 2003-07-29 Micron Technology, Inc. Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6407000B1 (en) * 1999-04-09 2002-06-18 Micron Technology, Inc. Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6273796B1 (en) * 1999-09-01 2001-08-14 Micron Technology, Inc. Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface
US6387289B1 (en) * 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
KR100481651B1 (en) * 2000-08-21 2005-04-08 가부시끼가이샤 도시바 Slurry for chemical mechanical polishing and method for manufacturing semiconductor device
JP2002100593A (en) * 2000-09-21 2002-04-05 Nikon Corp Grinding device, method for producing semiconductor device while using the same and semiconductor device produced thereby
US6811467B1 (en) * 2002-09-09 2004-11-02 Seagate Technology Llc Methods and apparatus for polishing glass substrates
JP2004247688A (en) * 2003-02-17 2004-09-02 Canon Inc Refrigerant supplying device
US6929532B1 (en) * 2003-05-08 2005-08-16 Lsi Logic Corporation Method and apparatus for filtering a chemical polishing slurry of a wafer fabrication process
JP2005007520A (en) * 2003-06-19 2005-01-13 Nihon Micro Coating Co Ltd Abrasive pad, manufacturing method thereof, and grinding method thereof
US6939211B2 (en) * 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US7470295B2 (en) * 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US7153191B2 (en) * 2004-08-20 2006-12-26 Micron Technology, Inc. Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods
FR2888146A1 (en) * 2005-07-06 2007-01-12 St Microelectronics Crolles 2 Polishing product supplying method for mechano-chemical polishing machine, involves directing polishing product towards plate and passing product through filter, where filter retains abrasive particles of product
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US7754612B2 (en) * 2007-03-14 2010-07-13 Micron Technology, Inc. Methods and apparatuses for removing polysilicon from semiconductor workpieces
US7960313B2 (en) * 2007-06-14 2011-06-14 Intermolecular, Inc. Combinatorial processing including stirring
US7785172B2 (en) * 2007-08-14 2010-08-31 Intermolecular, Inc. Combinatorial processing including rotation and movement within a region
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
US8696404B2 (en) * 2011-12-21 2014-04-15 WD Media, LLC Systems for recycling slurry materials during polishing processes
US10510563B2 (en) * 2016-04-15 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Wafer carrier assembly
CN108161585B (en) * 2018-01-25 2020-03-10 南京航空航天大学 Research method for researching initial grinding surface through single abrasive particle three-time grinding
US10468767B1 (en) 2019-02-20 2019-11-05 Pivotal Commware, Inc. Switchable patch antenna

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US6077437A (en) * 1996-10-18 2000-06-20 Nec Corporation Device and method for recovering and reusing a polishing agent

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US6077437A (en) * 1996-10-18 2000-06-20 Nec Corporation Device and method for recovering and reusing a polishing agent

Also Published As

Publication number Publication date
US20040198194A1 (en) 2004-10-07
US7122475B2 (en) 2006-10-17
US20040198195A1 (en) 2004-10-07
US6794289B2 (en) 2004-09-21
WO2000060917A2 (en) 2000-10-19
AU4332100A (en) 2000-11-14
US6407000B1 (en) 2002-06-18
US20020146907A1 (en) 2002-10-10
US20040229551A1 (en) 2004-11-18

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