WO2000070654A3 - Niederohmiges vdmos-halbleiterbauelement - Google Patents
Niederohmiges vdmos-halbleiterbauelement Download PDFInfo
- Publication number
- WO2000070654A3 WO2000070654A3 PCT/DE2000/001155 DE0001155W WO0070654A3 WO 2000070654 A3 WO2000070654 A3 WO 2000070654A3 DE 0001155 W DE0001155 W DE 0001155W WO 0070654 A3 WO0070654 A3 WO 0070654A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- low
- semiconductor component
- resistance
- vdmos semiconductor
- resistance vdmos
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012774 insulation material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00934909A EP1181712B1 (de) | 1999-05-12 | 2000-04-13 | Niederohmiges vdmos-halbleiterbauelement |
DE50014007T DE50014007D1 (de) | 1999-05-12 | 2000-04-13 | Niederohmiges vdmos-halbleiterbauelement |
JP2000619010A JP2003500826A (ja) | 1999-05-12 | 2000-04-13 | 低インピーダンスvdmos半導体素子 |
US10/011,131 US6534830B2 (en) | 1999-05-12 | 2001-11-13 | Low impedance VDMOS semiconductor component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19922187A DE19922187C2 (de) | 1999-05-12 | 1999-05-12 | Niederohmiges VDMOS-Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE19922187.1 | 1999-05-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/011,131 Continuation US6534830B2 (en) | 1999-05-12 | 2001-11-13 | Low impedance VDMOS semiconductor component |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000070654A2 WO2000070654A2 (de) | 2000-11-23 |
WO2000070654A3 true WO2000070654A3 (de) | 2001-07-19 |
Family
ID=7908027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2000/001155 WO2000070654A2 (de) | 1999-05-12 | 2000-04-13 | Niederohmiges vdmos-halbleiterbauelement |
Country Status (6)
Country | Link |
---|---|
US (1) | US6534830B2 (de) |
EP (1) | EP1181712B1 (de) |
JP (1) | JP2003500826A (de) |
AT (1) | ATE352873T1 (de) |
DE (2) | DE19922187C2 (de) |
WO (1) | WO2000070654A2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10134546A1 (de) * | 2001-07-16 | 2003-02-06 | X Fab Ges Zur Fertigung Von Wa | VDMOS-Transistor und Verfahren zu seiner Herstellung |
US6656797B2 (en) * | 2001-12-31 | 2003-12-02 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation |
JP3652322B2 (ja) * | 2002-04-30 | 2005-05-25 | Necエレクトロニクス株式会社 | 縦型mosfetとその製造方法 |
KR100767078B1 (ko) * | 2003-10-08 | 2007-10-15 | 도요다 지도샤 가부시끼가이샤 | 절연 게이트형 반도체 장치 및 그 제조 방법 |
GB0326030D0 (en) * | 2003-11-06 | 2003-12-10 | Koninkl Philips Electronics Nv | Insulated gate field effect transistor |
US7535056B2 (en) * | 2004-03-11 | 2009-05-19 | Yokogawa Electric Corporation | Semiconductor device having a low concentration layer formed outside a drift layer |
JP4491307B2 (ja) * | 2004-09-21 | 2010-06-30 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
DE102006036347B4 (de) * | 2006-08-03 | 2012-01-12 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einer platzsparenden Randstruktur |
US9252251B2 (en) | 2006-08-03 | 2016-02-02 | Infineon Technologies Austria Ag | Semiconductor component with a space saving edge structure |
JP2009094203A (ja) * | 2007-10-05 | 2009-04-30 | Denso Corp | 炭化珪素半導体装置 |
US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
US9716167B2 (en) * | 2011-02-22 | 2017-07-25 | National Semiconductor Corporation | Trench DMOS transistor with reduced gate-to-drain capacitance |
TWI587503B (zh) * | 2012-01-11 | 2017-06-11 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
US9070765B2 (en) | 2013-02-06 | 2015-06-30 | Infineon Technologies Ag | Semiconductor device with low on resistance and high breakdown voltage |
US20140374882A1 (en) * | 2013-06-21 | 2014-12-25 | Infineon Technologies Austria Ag | Semiconductor Device with Recombination Centers and Method of Manufacturing |
US20150118810A1 (en) * | 2013-10-24 | 2015-04-30 | Madhur Bobde | Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path |
CN106158961B (zh) * | 2015-04-17 | 2019-10-15 | 北大方正集团有限公司 | 平面型vdmos器件制作方法 |
CN105489500B (zh) * | 2015-12-30 | 2018-08-07 | 西安龙腾新能源科技发展有限公司 | 超结vdmos的制备方法及其超结vdmos器件 |
CN111146288A (zh) * | 2018-11-06 | 2020-05-12 | 无锡华润上华科技有限公司 | 一种半导体器件及其制造方法 |
CN113327976A (zh) * | 2021-05-08 | 2021-08-31 | 深圳市威兆半导体有限公司 | 超结功率mosfet的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08222735A (ja) * | 1995-02-17 | 1996-08-30 | Fuji Electric Co Ltd | 縦型トレンチmisfetおよびその製造方法 |
DE19534154A1 (de) * | 1995-09-14 | 1997-03-20 | Siemens Ag | Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4941026A (en) * | 1986-12-05 | 1990-07-10 | General Electric Company | Semiconductor devices exhibiting minimum on-resistance |
JPH0575066A (ja) * | 1991-09-13 | 1993-03-26 | Sony Corp | 半導体メモリ |
JPH0582792A (ja) * | 1991-09-25 | 1993-04-02 | Toshiba Corp | 半導体装置の製造方法 |
JP2946920B2 (ja) * | 1992-03-09 | 1999-09-13 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH07122749A (ja) * | 1993-09-01 | 1995-05-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
JP3325736B2 (ja) * | 1995-02-09 | 2002-09-17 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US5751024A (en) * | 1995-03-14 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
US5689128A (en) * | 1995-08-21 | 1997-11-18 | Siliconix Incorporated | High density trenched DMOS transistor |
US6228719B1 (en) * | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
JP3431467B2 (ja) * | 1997-09-17 | 2003-07-28 | 株式会社東芝 | 高耐圧半導体装置 |
US6114726A (en) * | 1998-03-11 | 2000-09-05 | International Rectifier Corp. | Low voltage MOSFET |
US6262453B1 (en) * | 1998-04-24 | 2001-07-17 | Magepower Semiconductor Corp. | Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate |
KR100275756B1 (ko) * | 1998-08-27 | 2000-12-15 | 김덕중 | 트렌치 절연 게이트 바이폴라 트랜지스터 |
-
1999
- 1999-05-12 DE DE19922187A patent/DE19922187C2/de not_active Expired - Fee Related
-
2000
- 2000-04-13 JP JP2000619010A patent/JP2003500826A/ja active Pending
- 2000-04-13 WO PCT/DE2000/001155 patent/WO2000070654A2/de active IP Right Grant
- 2000-04-13 EP EP00934909A patent/EP1181712B1/de not_active Expired - Lifetime
- 2000-04-13 AT AT00934909T patent/ATE352873T1/de not_active IP Right Cessation
- 2000-04-13 DE DE50014007T patent/DE50014007D1/de not_active Expired - Lifetime
-
2001
- 2001-11-13 US US10/011,131 patent/US6534830B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08222735A (ja) * | 1995-02-17 | 1996-08-30 | Fuji Electric Co Ltd | 縦型トレンチmisfetおよびその製造方法 |
US5981996A (en) * | 1995-02-17 | 1999-11-09 | Fuji Electric Co., Ltd. | Vertical trench misfet and method of manufacturing the same |
DE19534154A1 (de) * | 1995-09-14 | 1997-03-20 | Siemens Ag | Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement |
Non-Patent Citations (1)
Title |
---|
DEBOY G ET AL: "NEW GENERATION OF HIGH VOLTAGE MOSFETS BREAKS THE LIMIT LINE OF SILICON", INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, SAN FRANCISCO, CA, 6 December 1998 (1998-12-06) - 9 December 1998 (1998-12-09), IEEE, NEW YORK, NY, USA, pages 683 - 685, XP000859463, ISBN: 0-7803-4775-7 * |
Also Published As
Publication number | Publication date |
---|---|
US6534830B2 (en) | 2003-03-18 |
US20020079535A1 (en) | 2002-06-27 |
EP1181712B1 (de) | 2007-01-24 |
JP2003500826A (ja) | 2003-01-07 |
EP1181712A2 (de) | 2002-02-27 |
DE19922187C2 (de) | 2001-04-26 |
WO2000070654A2 (de) | 2000-11-23 |
DE19922187A1 (de) | 2000-11-23 |
DE50014007D1 (de) | 2007-03-15 |
ATE352873T1 (de) | 2007-02-15 |
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