WO2001001442A9 - A plasma reaction chamber component having improved temperature uniformity - Google Patents

A plasma reaction chamber component having improved temperature uniformity

Info

Publication number
WO2001001442A9
WO2001001442A9 PCT/US2000/016786 US0016786W WO0101442A9 WO 2001001442 A9 WO2001001442 A9 WO 2001001442A9 US 0016786 W US0016786 W US 0016786W WO 0101442 A9 WO0101442 A9 WO 0101442A9
Authority
WO
WIPO (PCT)
Prior art keywords
component
heat transfer
showerhead electrode
transfer member
support member
Prior art date
Application number
PCT/US2000/016786
Other languages
French (fr)
Other versions
WO2001001442A1 (en
Inventor
Fangli Hao
Rajinder Dhindsa
Javad Pourhashemi
Original Assignee
Lam Res Corp
Fangli Hao
Rajinder Dhindsa
Javad Pourhashemi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Fangli Hao, Rajinder Dhindsa, Javad Pourhashemi filed Critical Lam Res Corp
Priority to AU60521/00A priority Critical patent/AU6052100A/en
Priority to JP2001506573A priority patent/JP4970679B2/en
Priority to EP00946822A priority patent/EP1190435A1/en
Publication of WO2001001442A1 publication Critical patent/WO2001001442A1/en
Publication of WO2001001442A9 publication Critical patent/WO2001001442A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Definitions

  • the present invention relates to reactors for processing semiconductor integrated circuit substrates and specifically to a component which controls the temperature distribution across a heated member of the reactor.
  • Semiconductor processing includes deposition processes such as chemical vapor deposition (CVD) of conductive, dielectric and semiconducting materials, etching of such layers, ashing of photoresist masking layers, etc.
  • CVD chemical vapor deposition
  • etching plasma etching is conventionally used to etch metal, dielectric and semiconducting materials.
  • showerhead electrodes for plasma processing of semiconductor substrates are disclosed in commonly assigned U.S. Patent Nos. 5,074,456; 5,472,565; 5,534,751; and 5,569,356.
  • Other showerhead electrode gas distribution systems are disclosed in U.S. Patent Nos. 4,209,357; 4,263,088; 4,270,999; 4,297,162;
  • the dielectric materials include doped silicon oxide such as fluorinated silicon oxide (FSG), undoped silicon oxide such as silicon dioxide, silicate glasses such as boron phosphate silicate glass (BPSG) and phosphate silicate glass (PSG), doped or undoped thermally grown silicon oxide, doped or undoped TEOS deposited silicon oxide, etc.
  • the dielectric dopants include boron, phosphorus and/or arsenic.
  • the dielectric can overlie a conductive or semiconductive layer such as polycrystalline silicon, metals such as aluminum, copper, titanium, tungsten, molybdenum or alloys thereof, nitrides such as titanium nitride, metal suicides such as titanium suicide, cobalt suicide, tungsten suicide, molybdenum suicide, etc.
  • a plasma etching technique wherein a parallel plate plasma reactor is used for etching openings in silicon oxide, is disclosed in U.S. Patent No. 5,013,398.
  • U.S. Patent No. 5,736,457 describes single and dual "damascene" metallization processes.
  • vias and conductors are formed in separate steps wherein a metallization pattern for either conductors or vias is etched into a dielectric layer, a metal layer is filled into the etched grooves or via holes in the dielectric layer, and the excess metal is removed by chemical mechanical planarization (CMP) or by an etch back process.
  • CMP chemical mechanical planarization
  • the metallization patterns for the vias and conductors are etched in a dielectric layer and the etched grooves and via openings are filled with metal in a single metal filling and excess metal removal process.
  • the showerhead electrode becomes hot.
  • the temperature can vary considerably across the surface of the electrode.
  • the temperature difference between the center and the edge of the showerhead electrode can be about 100°C or higher, e.g. about 200 °C.
  • the nonuniform temperature distribution can cause uneven plasma density and/or process gas distribution which leads to nonuniform etching of the wafer. In showerhead arrangements which are edge cooled, this problem becomes greater as the size of the substrate increases since the temperature differential between the center and the edge of the showerhead electrode will become more pronounced as the diameter of the showerhead increases.
  • the temperature differential across a heated member such as a showerhead electrode can be substantially reduced.
  • a controlled temperature distribution across the electrode allows more uniform processing of a semiconductor substrate.
  • the maximum temperature reached by the showerhead electrode can be reduced, it is possible to increase the useful life of the electrode.
  • a component in a reaction chamber for processing semiconductor substrates includes a heat sink (e.g., a support member), a heated member (e.g. , an electrically powered showerhead electrode), and a heat transfer member between the heat sink and the heated member.
  • the heat transfer member provides a heat flow path from an elevated temperature region of the heated member to the heat sink.
  • FIG. 1 is a sectional view of an example of a gas distribution system including a single gas supply;
  • FIG. 2 is an exploded perspective view of a first embodiment of the present invention
  • FIG. 3 is a sectional view of a second embodiment of the present invention
  • FIG. 4 is an exploded perspective view of a third embodiment of the present invention.
  • FIG. 4A is a perspective view of the heat transfer member shown in FIG. 4 wherein the heat transfer member comprises concentric rings;
  • FIG. 5 is an exploded perspective view of a fourth embodiment of the present invention.
  • FIG. 6 is a perspective view of a heat transfer member which is integral with a support member.
  • FIG. 7 is a perspective view of a heat transfer member which is integral with a showerhead electrode.
  • the present invention provides improvements in obtaining temperature control of components of a reaction chamber for processing semiconductor substrates such as silicon wafers and flat panel displays.
  • Such components include sputtering targets, electrically powered showerhead electrodes, showerheads, substrate supports, etc. Such components may or may not be cooled by passing coolant therethrough.
  • the invention will now be discussed with reference to an electrically powered showerhead electrode.
  • a surface of a showerhead electrode increases in temperature due to, for example, resistive heating resulting from electric power being applied to the electrode.
  • the heat generated flows to the heat sink at its periphery (where the electrode and the heat sink are secured to one another).
  • the temperature of the center region of the electrode can be much higher than the periphery of electrode making it difficult to satisfactorily control substrate processing.
  • the showerhead or surface below the substrate or target may become hotter in some portions than in others.
  • the present invention provides a mechanism to improve temperature uniformity of such surfaces.
  • FIG. 1 An exemplary reaction chamber component for a plasma etching process is shown in FIG. 1 wherein a showerhead electrode 20 is secured to a cooled support member 22 to define a gas distribution chamber 23.
  • the temperature of the support member 22 can be controlled by circulating coolant through cooling channels 24 in the support member 22.
  • the showerhead electrode 20 is preferably of silicon but can be of any other suitable electrically conductive material such as aluminum, graphite, silicon carbide, etc. and gas passes through a plurality of openings 26.
  • the showerhead electrode 20 has an edge portion 28 which is integral with the electrode.
  • the edge portion 28 can comprise a separate support ring bonded to the outer edge of a circular showerhead plate, as shown in FIG. 3. In either case, the outer edge 28 is in thermal and electrical contact with the support member 22.
  • the gas distribution chamber 23 is defined by a top surface 30 of the showerhead electrode 20, the edge portion 28 and a bottom surface 32 of the support member 22.
  • Process gas is supplied to the chamber 23 by a central gas supply 29. However, the process gas can be supplied at the periphery of the electrode and/or by more than one gas supply. Gas flows downward through the gas distribution chamber and passes through the openings 26 in the showerhead electrode 20.
  • Electric power (typically RF power, although DC power may be used) is supplied to the showerhead electrode 20 in order to energize process gas into plasma.
  • RF power typically RF power, although DC power may be used
  • Electric power is supplied to the showerhead electrode 20 in order to energize process gas into plasma.
  • resistive heating occurs and the showerhead electrode 20 increases in temperature. If heat is removed from only the periphery of the electrode 20, the temperature at a center region 34 of the showerhead electrode 20 can increase more quickly than heat can be laterally transferred through the showerhead electrode 20 to the edge portion 28.
  • a large temperature differential e.g., about 100 to 300°C
  • This large temperature differential interferes with the uniform distribution of the process gas through the showerhead electrode 20 and/or the uniform distribution of power to the plasma.
  • a component 35 according to the present invention includes one or more heat transfer members 36 between the center region 34 of the top surface 30 of the showerhead electrode 20 and a bottom surface 32 of the temperature-controlled support member 22.
  • heat is transferred through the heat transfer members 36 to the temperature-controlled support member 22.
  • the temperature difference between the center region 34 and the edge portion 28 of the showerhead electrode 20 can be dramatically reduced (e.g., a temperature differential less than 50°C, preferably less than 15 to 20°C between the edge and the center of an electrode can be obtained).
  • semiconductor processing such as single wafer plasma etching wherein a wafer is below the showerhead electrode, more uniform processing can be achieved.
  • Heat transfer members 36 are preferably formed of a material which is thermally and electrically conductive. However, materials which are not electrically conductive, but are still thermally conductive may also be used.
  • Suitable materials include ceramic materials such as SiC, Si 3 N 4 , A1N, etc., metals such as Al, Cu, stainless steel, Mo, etc. and metal composites such as reinforced metals (e.g., carbon fiber-aluminum or copper, boron fiber-aluminum, SiC particle-aluminum, etc.).
  • the heat transfer members 36 can be cast aluminum bodies which machined into a desired shape.
  • the FIG. 2 embodiment includes a baffle assembly which acts to more uniformly distribute etching gas to the top surface 30 of the showerhead electrode 20.
  • the baffle assembly may include one or more baffle plates 40 located between the showerhead electrode 20 and the support member 22.
  • the baffle plates 40 can be made of aluminum and include one or more cutouts 42 to accommodate a similarly shaped heat transfer member 36 which fits into the cut-out defined space between the bottom surface 32 of the support member 22 and the top surface of the showerhead electrode.
  • the heat transfer member 36 includes a notch 44 which allows process gas to flow from the gas supply inlet 29 into plenums defined by the baffle plates. As a result, the gas supplied by the inlet 29 can be distributed across the surfaces of the baffle plates 40.
  • FIG 3 shows a second embodiment of a component 35 in accordance with the invention wherein the baffle plates 40 need not be cut to accommodate a heat transfer member 36.
  • heat transfer members 36 are sandwiched between the support member 22, baffle plates 40 and showerhead electrode 20.
  • the heat transfer members 36 can include gas passages therethrough to allow gas from the inlet 29 to be distributed in plenums defined by the baffle plates 40.
  • the heat transfer members 36 could be solid and the baffle plates could include grooves or channels to allow the process gas to circulate freely in the plenums defined by the baffle plates.
  • FIG. 4 A third embodiment of a component 35 according to the present invention is shown in FIG. 4 wherein the reaction chamber does not include baffle plates between the support member 22 and the showerhead electrode 20.
  • the heat transfer members 36 are located within a gas distribution chamber defined between the showerhead electrode 20 and the support member 22. As shown in FIG. 4, the heat transfer members 36 include notches 44 which allow process gas to flow between the heat transfer members 36 and across the surfaces of the support member 22 and the showerhead electrode 20.
  • the heat transfer members 36 preferably have excellent thermal contact with both the bottom surface 32 of the support member 22 and the top surface 30 of the showerhead electrode 20. Ideally, there are no gaps between the heat transfer members 36, the heated member (e.g., the showerhead electrode 20), and the heat sink (e.g., the support member 22).
  • the showerhead electrode 20, the heat transfer members 36 and the support member 22 to provide mating surfaces, providing a thermally conductive material such as a gasket of metallic material such as indium, silver or the like on opposite sides of the heat transfer members, and/or bonding the top surface 30 of the showerhead electrode 20 with metallic material or conductive adhesive such as an elastomer containing electrically and/or thermally conductive particles.
  • a thermally conductive material such as a gasket of metallic material such as indium, silver or the like on opposite sides of the heat transfer members
  • metallic material or conductive adhesive such as an elastomer containing electrically and/or thermally conductive particles.
  • the heat transfer members 36 sandwiched between the showerhead electrode 20 and the support member 22 are concentrically arranged annular rings.
  • the rings include notches 44 therein to allow process gas to flow across the gas distribution chamber.
  • the number of rings may be increased or decreased to achieve a desired heat transfer effect.
  • the heat transfer member or members can be in shapes other than rings (e.g., the heat transfer member could be in the shape of a central hub and radially extending arms or any other suitable shape).
  • the heat transfer members 36 are arranged to cover a minimum amount of the top surface 30 of the showerhead electrode 20 while still achieving the desired heat transfer effect.
  • the component 35 can include multiple gas supplies 39.
  • the gas pressure is highest at the outlet of each gas supply 39, the provision of multiple gas supplies 39 allows a more even distribution of gas pressure distribution to be obtained compared to that of a single gas supply.
  • FIG. 5 shows a fourth embodiment of a component 35 according to the present invention wherein the heat transfer member 36 is located between a substrate support surface 37 and a support member 41.
  • the surface 37 can be part of a bottom electrode which may or may not have an electrostatic clamp (ESC) associated therewith.
  • the heat transfer member 36 can be used to draw heat away from a portion of the surface 37 to the support member 41, thereby controlling the temperature differential across the surface 37.
  • the substrate support can omit a He backcooling arrangement typically used for cooling substrates such as Si wafers.
  • the heat transfer members 36 can be separate pieces or integral with either the heated member (e.g., the showerhead electrode 20) or the heat sink (e.g., support member 22).
  • FIG. 1 shows a fourth embodiment of a component 35 according to the present invention wherein the heat transfer member 36 is located between a substrate support surface 37 and a support member 41.
  • the surface 37 can be part of a bottom electrode which may or may not have an electrostatic clamp (ESC) associated there
  • FIG. 6 shows an example of heat transfer members 36 which are integral with the showerhead electrode and FIG. 7 shows an example of heat transfer members 36 which are integral with the support member 22.
  • the bonding material should have good thermal and optionally electrical conductivity and be compatible in a vacuum environment (e.g., have a low vapor pressure so that the material will not significantly contaminate a semiconductor processing environment).
  • Suitable bonding materials include conductive adhesives such as elastomers or epoxies and solder or brazing materials.
  • the present invention in the case of a showerhead electrode arrangement, direct or indirect surface to surface contact between the center region 34 of the showerhead electrode 20 and the temperature-controlled support member 22 can be achieved.
  • the present invention can control the temperature differential between the center region 34 and the edge portion 28 of a showerhead electrode 20.
  • Such better temperature control across the showerhead electrode 20 can provide a more controlled plasma density and/or gas flow/pressure across the substrate being processed.

Abstract

A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member (22) and a heated member such as an electrically powered showerhead electrode (20). The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface (30) of the electrode and a bottom surface (32) of the support member. A heat transfer member (36) extends between the electrode and the support member and transfers heat from an area of highest temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

Description

A REACTION CHAMBER COMPONENT HAVING IMPROVED TEMPERATURE UNIFORMITY
Field Of The Invention
The present invention relates to reactors for processing semiconductor integrated circuit substrates and specifically to a component which controls the temperature distribution across a heated member of the reactor.
Background Of The Invention
Semiconductor processing includes deposition processes such as chemical vapor deposition (CVD) of conductive, dielectric and semiconducting materials, etching of such layers, ashing of photoresist masking layers, etc. In the case of etching, plasma etching is conventionally used to etch metal, dielectric and semiconducting materials.
Showerhead electrodes for plasma processing of semiconductor substrates are disclosed in commonly assigned U.S. Patent Nos. 5,074,456; 5,472,565; 5,534,751; and 5,569,356. Other showerhead electrode gas distribution systems are disclosed in U.S. Patent Nos. 4,209,357; 4,263,088; 4,270,999; 4,297,162;
4,534,816; 4,579,618; 4,590,042; 4,593,540; 4,612,077; 4,780,169; 4,854,263;
5,006,220; 5,134,965; 5,494,713; 5,529,657; 5,593,540; 5,595,627; 5,614,055;
5,716,485; 5,746,875 and 5,888,907. A common requirement in integrated circuit fabrication is the etching of openings such as contacts and vias in dielectric materials. The dielectric materials include doped silicon oxide such as fluorinated silicon oxide (FSG), undoped silicon oxide such as silicon dioxide, silicate glasses such as boron phosphate silicate glass (BPSG) and phosphate silicate glass (PSG), doped or undoped thermally grown silicon oxide, doped or undoped TEOS deposited silicon oxide, etc. The dielectric dopants include boron, phosphorus and/or arsenic. The dielectric can overlie a conductive or semiconductive layer such as polycrystalline silicon, metals such as aluminum, copper, titanium, tungsten, molybdenum or alloys thereof, nitrides such as titanium nitride, metal suicides such as titanium suicide, cobalt suicide, tungsten suicide, molybdenum suicide, etc. A plasma etching technique, wherein a parallel plate plasma reactor is used for etching openings in silicon oxide, is disclosed in U.S. Patent No. 5,013,398.
U.S. Patent No. 5,736,457 describes single and dual "damascene" metallization processes. In the "single damascene" approach, vias and conductors are formed in separate steps wherein a metallization pattern for either conductors or vias is etched into a dielectric layer, a metal layer is filled into the etched grooves or via holes in the dielectric layer, and the excess metal is removed by chemical mechanical planarization (CMP) or by an etch back process. In the "dual damascene" approach, the metallization patterns for the vias and conductors are etched in a dielectric layer and the etched grooves and via openings are filled with metal in a single metal filling and excess metal removal process.
During the etching process, the showerhead electrode becomes hot. In addition, the temperature can vary considerably across the surface of the electrode. The temperature difference between the center and the edge of the showerhead electrode can be about 100°C or higher, e.g. about 200 °C. The nonuniform temperature distribution can cause uneven plasma density and/or process gas distribution which leads to nonuniform etching of the wafer. In showerhead arrangements which are edge cooled, this problem becomes greater as the size of the substrate increases since the temperature differential between the center and the edge of the showerhead electrode will become more pronounced as the diameter of the showerhead increases.
When etching large, twelve-inch (300 mm) wafers with a showerhead electrode, controlling the process gas to create a uniform plasma distribution is made more difficult. For instance, the number of openings in the baffles and showerhead electrode must be increased significantly to obtain distribution of the etching gas over a larger area. In addition, as the number of openings in the baffles increases and the number of baffles increase, the complexity and cost to manufacture such a gas distribution apparatus increase greatly. Further, because the flow rate of the process gas must be increased in proportion to the increased surface area of the wafer, achievement of uniformity with respect to processing ratio, selectivity, feature shape and size become more difficult. Moreover, the increased size of the showerhead leads to greater temperature gradients across the showerhead which can cause uneven processing of the substrate.
Summary Of The Invention
According to the present invention the temperature differential across a heated member such as a showerhead electrode can be substantially reduced. In the case of a showerhead electrode, a controlled temperature distribution across the electrode allows more uniform processing of a semiconductor substrate. In addition, because the maximum temperature reached by the showerhead electrode can be reduced, it is possible to increase the useful life of the electrode.
According to one embodiment of the invention, a component in a reaction chamber for processing semiconductor substrates includes a heat sink (e.g., a support member), a heated member (e.g. , an electrically powered showerhead electrode), and a heat transfer member between the heat sink and the heated member. The heat transfer member provides a heat flow path from an elevated temperature region of the heated member to the heat sink.
For example, in a parallel plate plasma etch process, heat generated at the center of the showerhead electrode is transferred through the heat transfer member to the support member, resulting in a low temperature differential between the center of the electrode and the periphery of the electrode. Consequently, plasma is distributed in a controlled and/or substantially uniform manner during substrate processing.
Brief Description Of The Drawings
The objects and advantages of the invention will be understood by reading the following detailed description in conjunction with the drawings in which:
FIG. 1 is a sectional view of an example of a gas distribution system including a single gas supply;
FIG. 2 is an exploded perspective view of a first embodiment of the present invention; FIG. 3 is a sectional view of a second embodiment of the present invention;
FIG. 4 is an exploded perspective view of a third embodiment of the present invention;
FIG. 4A is a perspective view of the heat transfer member shown in FIG. 4 wherein the heat transfer member comprises concentric rings; FIG. 5 is an exploded perspective view of a fourth embodiment of the present invention;
FIG. 6 is a perspective view of a heat transfer member which is integral with a support member; and
FIG. 7 is a perspective view of a heat transfer member which is integral with a showerhead electrode.
Detailed Description Of The Preferred Embodiments
For a better understanding of the invention, the following detailed description refers to the accompanying drawings, wherein preferred exemplary embodiments of the present invention are illustrated and described. In addition, the reference numbers used to identify like elements in the drawings are the same throughout. The present invention provides improvements in obtaining temperature control of components of a reaction chamber for processing semiconductor substrates such as silicon wafers and flat panel displays. Such components include sputtering targets, electrically powered showerhead electrodes, showerheads, substrate supports, etc. Such components may or may not be cooled by passing coolant therethrough. The invention will now be discussed with reference to an electrically powered showerhead electrode.
During processing of a substrate in a parallel plate plasma etching chamber, a surface of a showerhead electrode increases in temperature due to, for example, resistive heating resulting from electric power being applied to the electrode. The heat generated flows to the heat sink at its periphery (where the electrode and the heat sink are secured to one another). However, because a center region of the electrode is not in direct contact with the heat sink, the temperature of the center region of the electrode can be much higher than the periphery of electrode making it difficult to satisfactorily control substrate processing. Likewise, due to heating of a showerhead, a target or substrate, the showerhead or surface below the substrate or target may become hotter in some portions than in others. The present invention provides a mechanism to improve temperature uniformity of such surfaces. The following description discusses the present invention in the context of controlling the temperature distribution across a showerhead electrode or a substrate support in a plasma reaction chamber. However, the principles of the invention can be used to control the temperature distribution across other heated members of a reaction chamber for semiconductor processing. An exemplary reaction chamber component for a plasma etching process is shown in FIG. 1 wherein a showerhead electrode 20 is secured to a cooled support member 22 to define a gas distribution chamber 23. The temperature of the support member 22 can be controlled by circulating coolant through cooling channels 24 in the support member 22.
The showerhead electrode 20 is preferably of silicon but can be of any other suitable electrically conductive material such as aluminum, graphite, silicon carbide, etc. and gas passes through a plurality of openings 26. In the arrangement shown in FIG. 1, the showerhead electrode 20 has an edge portion 28 which is integral with the electrode. However, the edge portion 28 can comprise a separate support ring bonded to the outer edge of a circular showerhead plate, as shown in FIG. 3. In either case, the outer edge 28 is in thermal and electrical contact with the support member 22. The gas distribution chamber 23 is defined by a top surface 30 of the showerhead electrode 20, the edge portion 28 and a bottom surface 32 of the support member 22. Process gas is supplied to the chamber 23 by a central gas supply 29. However, the process gas can be supplied at the periphery of the electrode and/or by more than one gas supply. Gas flows downward through the gas distribution chamber and passes through the openings 26 in the showerhead electrode 20.
Electric power (typically RF power, although DC power may be used) is supplied to the showerhead electrode 20 in order to energize process gas into plasma. When electrical power is applied to the showerhead electrode 20 resistive heating occurs and the showerhead electrode 20 increases in temperature. If heat is removed from only the periphery of the electrode 20, the temperature at a center region 34 of the showerhead electrode 20 can increase more quickly than heat can be laterally transferred through the showerhead electrode 20 to the edge portion 28. As a result, a large temperature differential (e.g., about 100 to 300°C) can develop between the center region 34 of the showerhead electrode 20 and the edge portion 28 of the showerhead electrode 20. This large temperature differential interferes with the uniform distribution of the process gas through the showerhead electrode 20 and/or the uniform distribution of power to the plasma. A first embodiment of the invention is shown in FIG. 2 wherein a component 35 according to the present invention includes one or more heat transfer members 36 between the center region 34 of the top surface 30 of the showerhead electrode 20 and a bottom surface 32 of the temperature-controlled support member 22. During plasma processing, heat is transferred through the heat transfer members 36 to the temperature-controlled support member 22. In this way, the temperature difference between the center region 34 and the edge portion 28 of the showerhead electrode 20 can be dramatically reduced (e.g., a temperature differential less than 50°C, preferably less than 15 to 20°C between the edge and the center of an electrode can be obtained). As a result, in semiconductor processing such as single wafer plasma etching wherein a wafer is below the showerhead electrode, more uniform processing can be achieved.
Heat transfer members 36 are preferably formed of a material which is thermally and electrically conductive. However, materials which are not electrically conductive, but are still thermally conductive may also be used.
Suitable materials include ceramic materials such as SiC, Si3N4, A1N, etc., metals such as Al, Cu, stainless steel, Mo, etc. and metal composites such as reinforced metals (e.g., carbon fiber-aluminum or copper, boron fiber-aluminum, SiC particle-aluminum, etc.). For example, the heat transfer members 36 can be cast aluminum bodies which machined into a desired shape.
The FIG. 2 embodiment includes a baffle assembly which acts to more uniformly distribute etching gas to the top surface 30 of the showerhead electrode 20. The baffle assembly may include one or more baffle plates 40 located between the showerhead electrode 20 and the support member 22. The baffle plates 40 can be made of aluminum and include one or more cutouts 42 to accommodate a similarly shaped heat transfer member 36 which fits into the cut-out defined space between the bottom surface 32 of the support member 22 and the top surface of the showerhead electrode. As shown in FIG. 2, the heat transfer member 36 includes a notch 44 which allows process gas to flow from the gas supply inlet 29 into plenums defined by the baffle plates. As a result, the gas supplied by the inlet 29 can be distributed across the surfaces of the baffle plates 40. FIG. 3 shows a second embodiment of a component 35 in accordance with the invention wherein the baffle plates 40 need not be cut to accommodate a heat transfer member 36. Instead, heat transfer members 36 are sandwiched between the support member 22, baffle plates 40 and showerhead electrode 20. The heat transfer members 36 can include gas passages therethrough to allow gas from the inlet 29 to be distributed in plenums defined by the baffle plates 40. Alternatively, the heat transfer members 36 could be solid and the baffle plates could include grooves or channels to allow the process gas to circulate freely in the plenums defined by the baffle plates.
A third embodiment of a component 35 according to the present invention is shown in FIG. 4 wherein the reaction chamber does not include baffle plates between the support member 22 and the showerhead electrode 20. In the third embodiment, the heat transfer members 36 are located within a gas distribution chamber defined between the showerhead electrode 20 and the support member 22. As shown in FIG. 4, the heat transfer members 36 include notches 44 which allow process gas to flow between the heat transfer members 36 and across the surfaces of the support member 22 and the showerhead electrode 20.
In order to enhance removal of heat from the showerhead electrode 20, the heat transfer members 36 preferably have excellent thermal contact with both the bottom surface 32 of the support member 22 and the top surface 30 of the showerhead electrode 20. Ideally, there are no gaps between the heat transfer members 36, the heated member (e.g., the showerhead electrode 20), and the heat sink (e.g., the support member 22). Good thermal contact between these parts can be assured in various ways such as by manufacturing the showerhead electrode 20, the heat transfer members 36 and the support member 22 to provide mating surfaces, providing a thermally conductive material such as a gasket of metallic material such as indium, silver or the like on opposite sides of the heat transfer members, and/or bonding the top surface 30 of the showerhead electrode 20 with metallic material or conductive adhesive such as an elastomer containing electrically and/or thermally conductive particles.
As seen in more detail in FIG. 4A, the heat transfer members 36 sandwiched between the showerhead electrode 20 and the support member 22 are concentrically arranged annular rings. The rings include notches 44 therein to allow process gas to flow across the gas distribution chamber. Although three rings are shown in FIGS. 4 and 4A, the number of rings may be increased or decreased to achieve a desired heat transfer effect. Further, the heat transfer member or members can be in shapes other than rings (e.g., the heat transfer member could be in the shape of a central hub and radially extending arms or any other suitable shape). Ideally, the heat transfer members 36 are arranged to cover a minimum amount of the top surface 30 of the showerhead electrode 20 while still achieving the desired heat transfer effect.
Preferably, in order to obtain a more even distribution of gas within a gas distribution chamber not including baffle plates, the component 35 can include multiple gas supplies 39. In such an arrangement, because the gas pressure is highest at the outlet of each gas supply 39, the provision of multiple gas supplies 39 allows a more even distribution of gas pressure distribution to be obtained compared to that of a single gas supply.
FIG. 5 shows a fourth embodiment of a component 35 according to the present invention wherein the heat transfer member 36 is located between a substrate support surface 37 and a support member 41. The surface 37 can be part of a bottom electrode which may or may not have an electrostatic clamp (ESC) associated therewith. The heat transfer member 36 can be used to draw heat away from a portion of the surface 37 to the support member 41, thereby controlling the temperature differential across the surface 37. In such a case, the substrate support can omit a He backcooling arrangement typically used for cooling substrates such as Si wafers. In the foregoing embodiments, the heat transfer members 36 can be separate pieces or integral with either the heated member (e.g., the showerhead electrode 20) or the heat sink (e.g., support member 22). FIG. 6 shows an example of heat transfer members 36 which are integral with the showerhead electrode and FIG. 7 shows an example of heat transfer members 36 which are integral with the support member 22. If bonding material is used, the bonding material should have good thermal and optionally electrical conductivity and be compatible in a vacuum environment (e.g., have a low vapor pressure so that the material will not significantly contaminate a semiconductor processing environment). Suitable bonding materials include conductive adhesives such as elastomers or epoxies and solder or brazing materials.
Thus, according to the present invention, in the case of a showerhead electrode arrangement, direct or indirect surface to surface contact between the center region 34 of the showerhead electrode 20 and the temperature-controlled support member 22 can be achieved. In this way, the present invention can control the temperature differential between the center region 34 and the edge portion 28 of a showerhead electrode 20. Such better temperature control across the showerhead electrode 20 can provide a more controlled plasma density and/or gas flow/pressure across the substrate being processed.
The present invention has been described with reference to preferred embodiments. However, it will be readily apparent to those skilled in the art that it is possible to embody the invention in specific forms other than as described above without departing from the spirit of the invention. The preferred embodiments are illustrative and should not be considered restrictive in any way. The scope of the invention is given by the appended claims, rather than the preceding description, and all variations and equivalents which fall within the range of the claims are intended to be embraced therein.

Claims

WHAT IS CLAIMED IS:
1. A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising: a heat sink; a heated member supported by the heat sink; and a heat transfer member in thermal contact with a heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member.
2. The component of Claim 1, wherein the heat sink is a support member having a bottom surface, and the heated member is an electrically powered showerhead electrode peripherally secured to the support member so as to enclose a gas distribution chamber between a top surface of the showerhead electrode and the bottom surface of the support member, and wherein the heat transfer member is in thermal contact with a center region of the top surface of the showerhead electrode and the bottom surface of the support member.
3. The component of Claim 2, wherein process gas is supplied to the gas distribution chamber through one or more gas supplies.
4. The component of Claim 2, wherein the heat transfer member comprises a unitary body of metal.
5. The component assembly of Claim 1 , wherein the heated member comprises a showerhead, a substrate support or a sputter target support.
6. The component of Claim 2, wherein the heat transfer member is a cast metal body.
7. The component of Claim 2, wherein the heat transfer member is a shaped body of silicon.
8. The component of Claim 2, wherein the heat transfer member is a metal composite body.
9. The component of Claim 2, wherein the heat transfer member comprises a projection on the top surface of the electrode.
10. The component of Claim 2, wherein the heat transfer member comprises a shaped body bonded to the top surface of the electrode with bonding material.
11. The component of Claim 10, wherein the bonding material is a metallic material or thermally conductive adhesive.
12. The showerhead electrode assembly of Claim 2, wherein the heat transfer member comprises a projection on the bottom surface of the support member .
13. The component of Claim 2, wherein the heat transfer member comprises a shaped body bonded to the bottom surface of the support member with bonding material.
14. The component of Claim 13, wherein the bonding material is a metallic material or thermally conductive adhesive.
15. The component of Claim 2, wherein the heat transfer member comprises concentrically arranged annular rings.
16. The component of Claim 15, wherein the rings include gas passages therethrough.
17. The component of Claim 2, wherein a coolant passes through channels in the support member.
18. The component of Claim 2, further comprising a baffle assembly located between the support member and the showerhead electrode, the baffle assembly including first and second baffle plates.
19. A component of Claim 18, wherein the first and second baffle plates include shaped openings having the shape of the heat transfer member and the shaped openings are closely fitted around the heat transfer member.
20. The component of Claim 18, wherein the heat transfer member comprises first, second and third shaped bodies, the first body thermally contacting the center region of the top surface of the showerhead electrode and an underside of the first baffle plate, the second body thermally contacting the top of the first baffle plate and an underside of the second baffle plate, and the third body thermally contacting the top of the second baffle plate and the bottom surface of the support member.
21. In a component for a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, the improvement comprising a heat transfer member providing a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate.
22. A method of processing a semiconductor substrate in a plasma chamber containing the component of Claim 2, the method comprising flowing process gas through the showerhead electrode, energizing the process gas into a plasma state by supplying RF power to the showerhead electrode, and contacting an exposed surface of the semiconductor substrate with the plasma.
PCT/US2000/016786 1999-06-30 2000-06-14 A plasma reaction chamber component having improved temperature uniformity WO2001001442A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU60521/00A AU6052100A (en) 1999-06-30 2000-06-14 A plasma reaction chamber component having improved temperature uniformity
JP2001506573A JP4970679B2 (en) 1999-06-30 2000-06-14 Plasma reaction chamber component with improved temperature uniformity and processing method using the same
EP00946822A EP1190435A1 (en) 1999-06-30 2000-06-14 A plasma reaction chamber component having improved temperature uniformity

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/343,482 US6123775A (en) 1999-06-30 1999-06-30 Reaction chamber component having improved temperature uniformity
US09/343,482 1999-06-30

Publications (2)

Publication Number Publication Date
WO2001001442A1 WO2001001442A1 (en) 2001-01-04
WO2001001442A9 true WO2001001442A9 (en) 2003-01-30

Family

ID=23346293

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/016786 WO2001001442A1 (en) 1999-06-30 2000-06-14 A plasma reaction chamber component having improved temperature uniformity

Country Status (8)

Country Link
US (1) US6123775A (en)
EP (1) EP1190435A1 (en)
JP (1) JP4970679B2 (en)
KR (1) KR100733897B1 (en)
CN (1) CN100350545C (en)
AU (1) AU6052100A (en)
TW (1) TW473781B (en)
WO (1) WO2001001442A1 (en)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515264B2 (en) * 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6444040B1 (en) * 2000-05-05 2002-09-03 Applied Materials Inc. Gas distribution plate
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP3946641B2 (en) * 2001-01-22 2007-07-18 東京エレクトロン株式会社 Processing equipment
KR100756107B1 (en) * 2001-02-09 2007-09-05 동경 엘렉트론 주식회사 Film forming device
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20020134513A1 (en) * 2001-03-22 2002-09-26 David Palagashvili Novel thermal transfer apparatus
JP4402860B2 (en) * 2001-03-28 2010-01-20 忠弘 大見 Plasma processing equipment
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
KR100400044B1 (en) * 2001-07-16 2003-09-29 삼성전자주식회사 Shower head of wafer treatment apparatus having gap controller
US6786175B2 (en) 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
JP4082720B2 (en) * 2001-09-10 2008-04-30 キヤノンアネルバ株式会社 Substrate surface treatment equipment
US7017514B1 (en) * 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
JP4338355B2 (en) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 Plasma processing equipment
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7500445B2 (en) * 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7296534B2 (en) * 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
JP4493932B2 (en) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 Upper electrode and plasma processing apparatus
KR20060064067A (en) * 2003-09-03 2006-06-12 동경 엘렉트론 주식회사 Gas treatment device and heat readiting method
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4698251B2 (en) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド Movable or flexible shower head mounting
US7210538B2 (en) * 2004-03-27 2007-05-01 Cnh America Llc Center pivot wing flotation method and apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8540843B2 (en) 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
US20060000551A1 (en) * 2004-06-30 2006-01-05 Saldana Miguel A Methods and apparatus for optimal temperature control in a plasma processing system
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060065632A1 (en) * 2004-09-27 2006-03-30 Chia-Cheng Cheng Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency
US20060065631A1 (en) * 2004-09-27 2006-03-30 Chia-Cheng Cheng Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
KR100572118B1 (en) * 2005-01-28 2006-04-18 주식회사 에이디피엔지니어링 Plasma processing apparatus
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
JP2008540840A (en) * 2005-05-09 2008-11-20 エイエスエム・ジェニテック・コリア・リミテッド Reactor of atomic layer deposition apparatus with multiple gas inlets
KR100629358B1 (en) * 2005-05-24 2006-10-02 삼성전자주식회사 Shower head
US20070044714A1 (en) * 2005-08-31 2007-03-01 Applied Materials, Inc. Method and apparatus for maintaining a cross sectional shape of a diffuser during processing
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
KR101036185B1 (en) 2005-09-30 2011-05-23 엘아이지에이디피 주식회사 Apparatus for processing substrate with plasma
US7826724B2 (en) * 2006-04-24 2010-11-02 Nordson Corporation Electronic substrate non-contact heating system and method
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
JP4826483B2 (en) * 2007-01-19 2011-11-30 東京エレクトロン株式会社 Plasma processing equipment
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
JP4928991B2 (en) 2007-03-12 2012-05-09 東京エレクトロン株式会社 Substrate processing equipment
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
JP5008478B2 (en) * 2007-06-27 2012-08-22 東京エレクトロン株式会社 Substrate processing apparatus and shower head
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
CN104357807B (en) * 2008-03-26 2019-06-28 Oci有限公司 The system and method for distribution are used in CVD reactor
TWI464292B (en) * 2008-03-26 2014-12-11 Gtat Corp Gold-coated polysilicon reactor system and method
KR101110080B1 (en) * 2009-07-08 2012-03-13 주식회사 유진테크 Method for processing substrate
WO2011044451A2 (en) * 2009-10-09 2011-04-14 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20110097489A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Distribution manifold including multiple fluid communication ports
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
JP2013012353A (en) * 2011-06-28 2013-01-17 Hitachi High-Technologies Corp Plasma processing apparatus
CN104813440A (en) * 2012-09-26 2015-07-29 应用材料公司 Controlling temperature in substrate processing systems
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
KR102156795B1 (en) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Deposition apparatus
TWI470105B (en) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
KR101560623B1 (en) * 2014-01-03 2015-10-15 주식회사 유진테크 Substrate processing apparatus and substrate processing method
US9469912B2 (en) 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
US9472377B2 (en) 2014-10-17 2016-10-18 Lam Research Corporation Method and apparatus for characterizing metal oxide reduction
JP6886920B2 (en) 2015-09-08 2021-06-16 Ｊｃｒファーマ株式会社 New human serum albumin mutant
EP3349902B1 (en) * 2015-09-15 2021-05-26 Life Technologies Corporation System for biological analysis
US10483092B2 (en) * 2016-04-13 2019-11-19 Lam Research Corporation Baffle plate and showerhead assemblies and corresponding manufacturing method
US10577689B2 (en) 2016-09-23 2020-03-03 Applied Materials, Inc. Sputtering showerhead
US10607817B2 (en) * 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US11776822B2 (en) * 2018-05-29 2023-10-03 Applied Materials, Inc. Wet cleaning of electrostatic chuck
JP6575641B1 (en) * 2018-06-28 2019-09-18 株式会社明電舎 Shower head and processing equipment
WO2023140941A1 (en) * 2022-01-24 2023-07-27 Lam Research Corporation Active temperature control of showerheads for high temperature processes

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4337495A (en) * 1980-06-13 1982-06-29 Porta Systems Corp. Carbon electrode having metallic heat sink
US4481636A (en) * 1982-05-05 1984-11-06 Council For Mineral Technology Electrode assemblies for thermal plasma generating devices
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
CH664303A5 (en) * 1985-04-03 1988-02-29 Balzers Hochvakuum HOLDING DEVICE FOR TARGETS FOR CATHODE SPRAYING.
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPH066505Y2 (en) * 1986-04-11 1994-02-16 沖電気工業株式会社 Electrode cooling mechanism
EP0276962A1 (en) * 1987-01-27 1988-08-03 Machine Technology Inc. Cooling device for a sputter target and source
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5078851A (en) * 1989-07-26 1992-01-07 Kouji Nishihata Low-temperature plasma processor
JPH0382022A (en) * 1989-08-24 1991-04-08 Nec Corp Dry etching device
JP2903239B2 (en) * 1990-03-15 1999-06-07 東京エレクトロン株式会社 Plasma etching method
US5151918A (en) * 1990-08-28 1992-09-29 Argent Ronald D Electrode blocks and block assemblies
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
KR100276093B1 (en) * 1992-10-19 2000-12-15 히가시 데쓰로 Plasma etching system
JP2851229B2 (en) * 1992-10-19 1999-01-27 株式会社日立製作所 Plasma etching system and plasma etching method
JP3242166B2 (en) * 1992-11-19 2001-12-25 株式会社日立製作所 Etching equipment
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
KR100264445B1 (en) * 1993-10-04 2000-11-01 히가시 데쓰로 Plasma treatment equipment
JP3308091B2 (en) * 1994-02-03 2002-07-29 東京エレクトロン株式会社 Surface treatment method and plasma treatment device
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
GB9413973D0 (en) * 1994-07-11 1994-08-31 Rank Brimar Ltd Electrode structure
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
JP3599204B2 (en) * 1995-06-08 2004-12-08 アネルバ株式会社 CVD equipment
JP3113796B2 (en) * 1995-07-10 2000-12-04 東京エレクトロン株式会社 Plasma processing equipment
US5879348A (en) * 1996-04-12 1999-03-09 Ep Technologies, Inc. Electrode structures formed from flexible, porous, or woven materials
TW340957B (en) * 1996-02-01 1998-09-21 Canon Hanbai Kk Plasma processor and gas release device
US5730803A (en) * 1996-02-23 1998-03-24 Applied Materials, Inc. Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body
JP3360265B2 (en) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP3310171B2 (en) * 1996-07-17 2002-07-29 松下電器産業株式会社 Plasma processing equipment
US6589407B1 (en) * 1997-05-23 2003-07-08 Applied Materials, Inc. Aluminum deposition shield

Also Published As

Publication number Publication date
TW473781B (en) 2002-01-21
AU6052100A (en) 2001-01-31
EP1190435A1 (en) 2002-03-27
KR100733897B1 (en) 2007-07-02
KR20020027374A (en) 2002-04-13
US6123775A (en) 2000-09-26
WO2001001442A1 (en) 2001-01-04
JP2003503838A (en) 2003-01-28
JP4970679B2 (en) 2012-07-11
CN100350545C (en) 2007-11-21
CN1370325A (en) 2002-09-18

Similar Documents

Publication Publication Date Title
US6123775A (en) Reaction chamber component having improved temperature uniformity
US6245192B1 (en) Gas distribution apparatus for semiconductor processing
US6451157B1 (en) Gas distribution apparatus for semiconductor processing
US6377437B1 (en) High temperature electrostatic chuck
KR102471635B1 (en) Ultra-uniform heated substrate support assembly
KR101476566B1 (en) Substrate support having dynamic temperature control
EP1145273B1 (en) Low contamination high density plasma etch chambers and methods for making the same
US6669783B2 (en) High temperature electrostatic chuck
US11043360B2 (en) Gas distribution plate assembly for high power plasma etch processes
US20030029715A1 (en) An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
WO2002103761A1 (en) Substrate support with multilevel heat transfer mechanism
JP2006140455A (en) Method of controlling substrate temperature and its apparatus
JP2012054594A (en) Heat transfer system for improved semiconductor processing uniformity
CN114521288B (en) Thermal diffuser for semiconductor wafer holder
WO2021158612A1 (en) Electrostatic edge ring mounting system for substrate processing
CN112789714A (en) Detachable thermal leveler
US20070044914A1 (en) Vacuum processing apparatus
JP2009064952A (en) Surface treatment apparatus
WO2023140941A1 (en) Active temperature control of showerheads for high temperature processes
CN116194616A (en) Axial cooling metal spray head for high-temperature process

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 00809725.9

Country of ref document: CN

AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2000946822

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2001 506573

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020017016765

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2000946822

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020017016765

Country of ref document: KR

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

COP Corrected version of pamphlet

Free format text: PAGES 1/8-8/8, DRAWINGS, REPLACED BY NEW PAGES 1/5-5/5; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE