WO2001027972A3 - Molecular scale electronic devices - Google Patents

Molecular scale electronic devices Download PDF

Info

Publication number
WO2001027972A3
WO2001027972A3 PCT/US2000/025518 US0025518W WO0127972A3 WO 2001027972 A3 WO2001027972 A3 WO 2001027972A3 US 0025518 W US0025518 W US 0025518W WO 0127972 A3 WO0127972 A3 WO 0127972A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronic devices
molecular scale
conductive path
scale electronic
devices
Prior art date
Application number
PCT/US2000/025518
Other languages
French (fr)
Other versions
WO2001027972A2 (en
WO2001027972A9 (en
Inventor
Mark A Reed
James M Tour
Jia Chen
Adam M Rawlett
David W Price
Original Assignee
Univ Yale
Mark A Reed
James M Tour
Jia Chen
Adam M Rawlett
David W Price
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/551,716 external-priority patent/US6756605B1/en
Application filed by Univ Yale, Mark A Reed, James M Tour, Jia Chen, Adam M Rawlett, David W Price filed Critical Univ Yale
Priority to AU32614/01A priority Critical patent/AU3261401A/en
Priority to EP00991376A priority patent/EP1542869A4/en
Priority to JP2001530895A priority patent/JP2004518268A/en
Priority to CA002404832A priority patent/CA2404832A1/en
Publication of WO2001027972A2 publication Critical patent/WO2001027972A2/en
Publication of WO2001027972A3 publication Critical patent/WO2001027972A3/en
Publication of WO2001027972A9 publication Critical patent/WO2001027972A9/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/701—Organic molecular electronic devices

Abstract

Molecular scale electronic devices (1) are disclosed. Such devices include at least two conductive contacts (9 and 11), and a conductive path (13) bridging the contacts. The conductive path is able to be written into a perturbed state by a voltage pulse, which can be of high or low conductivity, relative to an initial state. The conductive path comprises organic molecules including at least one electron-withdrawing group. Room temperature negative differential resistance is exhibited by the devices.
PCT/US2000/025518 1999-09-20 2000-09-18 Molecular scale electronic devices WO2001027972A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU32614/01A AU3261401A (en) 1999-09-20 2000-09-18 Molecular scale electronic devices
EP00991376A EP1542869A4 (en) 1999-09-20 2000-09-18 Molecular scale electronic devices
JP2001530895A JP2004518268A (en) 1999-09-20 2000-09-18 Molecular scale electronic device
CA002404832A CA2404832A1 (en) 1999-09-20 2000-09-18 Molecular scale electronic devices

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US15471699P 1999-09-20 1999-09-20
US60/154,716 1999-09-20
US15714999P 1999-09-30 1999-09-30
US60/157,149 1999-09-30
US52788500A 2000-03-20 2000-03-20
US09/527,885 2000-03-20
US09/551,716 2000-04-18
US09/551,716 US6756605B1 (en) 1999-09-20 2000-04-18 Molecular scale electronic devices

Publications (3)

Publication Number Publication Date
WO2001027972A2 WO2001027972A2 (en) 2001-04-19
WO2001027972A3 true WO2001027972A3 (en) 2001-11-22
WO2001027972A9 WO2001027972A9 (en) 2002-11-14

Family

ID=27496149

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/025518 WO2001027972A2 (en) 1999-09-20 2000-09-18 Molecular scale electronic devices

Country Status (6)

Country Link
EP (1) EP1542869A4 (en)
JP (1) JP2004518268A (en)
AU (1) AU3261401A (en)
CA (1) CA2404832A1 (en)
TW (1) TW463183B (en)
WO (1) WO2001027972A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809846B2 (en) 2011-11-30 2014-08-19 Kabushiki Kaisha Toshiba Organic molecular memories and organic molecules for organic molecular memories

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10132640A1 (en) * 2001-07-05 2003-01-23 Infineon Technologies Ag Molecular electronics arrangement and method for producing a molecular electronics arrangement
US6828685B2 (en) 2002-06-14 2004-12-07 Hewlett-Packard Development Company, L.P. Memory device having a semiconducting polymer film
WO2004050231A2 (en) * 2002-11-29 2004-06-17 Aarhus Universitet (bio) organic oligomers for the preparation of macromolecules
DE10337830B4 (en) * 2003-08-18 2005-08-25 Infineon Technologies Ag Method for producing a multilayer arrangement with a metal layer in a molecular electronics arrangement
DE10340610B4 (en) * 2003-08-29 2007-06-06 Infineon Technologies Ag Connection with at least one storage unit made of organic storage material, in particular for use in CMOS structures, semiconductor component and a method for producing a semiconductor component
US7035140B2 (en) * 2004-01-16 2006-04-25 Hewlett-Packard Development Company, L.P. Organic-polymer memory element
EP2158476B8 (en) * 2007-05-08 2019-10-09 Trustees of Boston University Chemical functionalization of solid-state nanopores and nanopore arrays and applications thereof
US8933437B2 (en) 2008-11-27 2015-01-13 Kaneka Corporation Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material
JP2022107072A (en) * 2019-05-23 2022-07-21 国立大学法人東京工業大学 Variable resistance device and manufacturing method for the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629798A (en) * 1983-04-18 1986-12-16 The B. F. Goodrich Company Electrically conductive pyrrole polymers and process of preparing the same
US5110669A (en) * 1989-09-28 1992-05-05 The Dow Chemical Company Conductive polymer laminates
US5563424A (en) * 1994-03-24 1996-10-08 Uniax Corporation Polymer grid triodes
US5814833A (en) * 1993-11-01 1998-09-29 Research Corporation Technologies, Inc. Conjugated polymer exciplexes and applications thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3751376T2 (en) * 1986-10-13 1995-11-16 Canon Kk Circuit element.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629798A (en) * 1983-04-18 1986-12-16 The B. F. Goodrich Company Electrically conductive pyrrole polymers and process of preparing the same
US5110669A (en) * 1989-09-28 1992-05-05 The Dow Chemical Company Conductive polymer laminates
US5814833A (en) * 1993-11-01 1998-09-29 Research Corporation Technologies, Inc. Conjugated polymer exciplexes and applications thereof
US5563424A (en) * 1994-03-24 1996-10-08 Uniax Corporation Polymer grid triodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809846B2 (en) 2011-11-30 2014-08-19 Kabushiki Kaisha Toshiba Organic molecular memories and organic molecules for organic molecular memories

Also Published As

Publication number Publication date
TW463183B (en) 2001-11-11
EP1542869A2 (en) 2005-06-22
EP1542869A4 (en) 2005-06-22
WO2001027972A2 (en) 2001-04-19
AU3261401A (en) 2001-04-23
CA2404832A1 (en) 2001-04-19
JP2004518268A (en) 2004-06-17
WO2001027972A9 (en) 2002-11-14

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