WO2001029141A1 - Deposition of fluorosilsesquioxane films - Google Patents
Deposition of fluorosilsesquioxane films Download PDFInfo
- Publication number
- WO2001029141A1 WO2001029141A1 PCT/US2000/028738 US0028738W WO0129141A1 WO 2001029141 A1 WO2001029141 A1 WO 2001029141A1 US 0028738 W US0028738 W US 0028738W WO 0129141 A1 WO0129141 A1 WO 0129141A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- films
- silsesquioxane
- sio
- dielectric
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31629—Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU15714/01A AU1571401A (en) | 1999-10-18 | 2000-10-18 | Deposition of fluorosilsesquioxane films |
EP00978235A EP1230311A1 (en) | 1999-10-18 | 2000-10-18 | Deposition of fluorosilsesquioxane films |
KR1020027004976A KR20020042726A (en) | 1999-10-18 | 2000-10-18 | Deposition of fluorosilsesquioxane films |
JP2001531931A JP2003512390A (en) | 1999-10-18 | 2000-10-18 | Deposition of fluorosilsesquioxane film |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/420,052 | 1999-10-18 | ||
US09/420,052 US6440550B1 (en) | 1999-10-18 | 1999-10-18 | Deposition of fluorosilsesquioxane films |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001029141A1 true WO2001029141A1 (en) | 2001-04-26 |
Family
ID=23664885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/028738 WO2001029141A1 (en) | 1999-10-18 | 2000-10-18 | Deposition of fluorosilsesquioxane films |
Country Status (6)
Country | Link |
---|---|
US (3) | US6440550B1 (en) |
EP (1) | EP1230311A1 (en) |
JP (1) | JP2003512390A (en) |
KR (1) | KR20020042726A (en) |
AU (1) | AU1571401A (en) |
WO (1) | WO2001029141A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1271634A2 (en) * | 2001-06-19 | 2003-01-02 | The Boc Group, Inc. | Methods for forming low-K dielectric films |
WO2004066360A2 (en) | 2003-01-22 | 2004-08-05 | Honeywell International Inc | Apparatus and methods for ionized deposition of a film or thin layer |
EP1490454A2 (en) * | 2002-01-17 | 2004-12-29 | Silecs OY | Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications |
WO2005004220A1 (en) | 2003-07-03 | 2005-01-13 | Degussa Ag | Process for producing low-k dielectric films |
JP2006521019A (en) * | 2003-03-18 | 2006-09-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Ultra-low-k (ULK) SiCOH film and method |
EP3040388A1 (en) * | 2014-12-31 | 2016-07-06 | LG Display Co., Ltd. | Touch sensitive device comprising electroactive film, display device comprising the same, and method of manufacturing the electroactive film |
TWI571483B (en) * | 2014-12-31 | 2017-02-21 | 樂金顯示科技股份有限公司 | Touch sensitive device comprising electroactive film, display device comprising the same, and method of manufacturing the electroactive film |
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US6582777B1 (en) * | 2000-02-17 | 2003-06-24 | Applied Materials Inc. | Electron beam modification of CVD deposited low dielectric constant materials |
JP2002179795A (en) * | 2000-12-14 | 2002-06-26 | Sumitomo Chem Co Ltd | Photosensitive resin, resist composition and method for patterning |
US6569932B2 (en) * | 2001-07-06 | 2003-05-27 | Benjamin S. Hsiao | Blends of organic silicon compounds with ethylene-based polymers |
US6881445B1 (en) * | 2001-10-29 | 2005-04-19 | Innovation Chemical Technologies, Ltd. | Forming thin films on substrates using a porous carrier |
EP1506327A1 (en) * | 2002-05-23 | 2005-02-16 | Universit de Sherbrooke | Ceramic thin film on various substrates, and process for producing same |
JP4092220B2 (en) * | 2003-01-31 | 2008-05-28 | Necエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US20050260420A1 (en) * | 2003-04-01 | 2005-11-24 | Collins Martha J | Low dielectric materials and methods for making same |
US7141692B2 (en) * | 2003-11-24 | 2006-11-28 | International Business Machines Corporation | Molecular photoresists containing nonpolymeric silsesquioxanes |
KR20130008643A (en) * | 2004-12-28 | 2013-01-22 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Prismatic retroreflective article with fluorine- or silicon-containing prisms |
US7195360B2 (en) * | 2004-12-28 | 2007-03-27 | 3M Innovative Properties Company | Prismatic retroreflective article and method |
US7399581B2 (en) * | 2005-02-24 | 2008-07-15 | International Business Machines Corporation | Photoresist topcoat for a photolithographic process |
US7647175B2 (en) * | 2005-09-09 | 2010-01-12 | Rembrandt Technologies, Lp | Discrete inertial display navigation |
US20080221263A1 (en) * | 2006-08-31 | 2008-09-11 | Subbareddy Kanagasabapathy | Coating compositions for producing transparent super-hydrophobic surfaces |
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US20090111925A1 (en) * | 2007-10-31 | 2009-04-30 | Burnham Kikue S | Thermal interface materials, methods of production and uses thereof |
EP3541619B1 (en) | 2016-11-18 | 2022-03-16 | The Penn State Research Foundation | Liquid and viscoelastic material repellent and anti-biofouling coatings |
KR102505880B1 (en) * | 2017-09-06 | 2023-03-06 | 삼성디스플레이 주식회사 | Thin film transistor and method of manufacturing the same, Display device including the transistor |
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Citations (2)
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JPH06248085A (en) * | 1993-02-25 | 1994-09-06 | Nippon Zeon Co Ltd | Fluorinated polysiloxanes |
EP0730298A2 (en) * | 1995-02-28 | 1996-09-04 | Hitachi, Ltd. | A dielectric, a manufacturing method thereof, and semiconductor device using the same |
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Also Published As
Publication number | Publication date |
---|---|
US20020127416A1 (en) | 2002-09-12 |
EP1230311A1 (en) | 2002-08-14 |
US6838124B2 (en) | 2005-01-04 |
KR20020042726A (en) | 2002-06-05 |
US6440550B1 (en) | 2002-08-27 |
AU1571401A (en) | 2001-04-30 |
JP2003512390A (en) | 2003-04-02 |
US20050116347A1 (en) | 2005-06-02 |
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