WO2001033625A8 - Electrostatic wafer clamp having electrostatic seal for retaining gas - Google Patents

Electrostatic wafer clamp having electrostatic seal for retaining gas

Info

Publication number
WO2001033625A8
WO2001033625A8 PCT/US2000/030073 US0030073W WO0133625A8 WO 2001033625 A8 WO2001033625 A8 WO 2001033625A8 US 0030073 W US0030073 W US 0030073W WO 0133625 A8 WO0133625 A8 WO 0133625A8
Authority
WO
WIPO (PCT)
Prior art keywords
clamping surface
workpiece
electrostatic
electrodes
gas
Prior art date
Application number
PCT/US2000/030073
Other languages
French (fr)
Other versions
WO2001033625A1 (en
Inventor
Grant Kenji Larsen
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Priority to JP2001535225A priority Critical patent/JP4557200B2/en
Priority to EP00978321A priority patent/EP1226605A1/en
Publication of WO2001033625A1 publication Critical patent/WO2001033625A1/en
Publication of WO2001033625A8 publication Critical patent/WO2001033625A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

Methods and apparatus are provided for holding a workpiece, such as a semiconductor wafer, during processing. The apparatus includes a platen assembly, a gas source and voltage source. The platen assembly includes a dielectric element that defines an electrically insulating clamping surface for receiving a workpiece and electrodes underlying the clamping surface. The electrodes include sealing electrodes at or near a periphery of the clamping surface.The gas source provides a gas in a region between the workpiece and the clamping surface for conducting thermal energy between the workpiece and the clamping surface. The voltage source applies sealing voltages to the sealing electrodes for producing in inwardly moving wave in the workpiece. Gas is transported inwardly away from the periphery of the clamping surface by the inwardly moving wave. The sealing electrodes may have the form of concentric rings at or near the periphery of the clamping surface.
PCT/US2000/030073 1999-11-02 2000-11-01 Electrostatic wafer clamp having electrostatic seal for retaining gas WO2001033625A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001535225A JP4557200B2 (en) 1999-11-02 2000-11-01 Apparatus and method for clamping a wafer using an electrostatic seal for holding gas
EP00978321A EP1226605A1 (en) 1999-11-02 2000-11-01 Electrostatic wafer clamp having electrostatic seal for retaining gas

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/431,837 1999-11-02
US09/431,837 US6362946B1 (en) 1999-11-02 1999-11-02 Electrostatic wafer clamp having electrostatic seal for retaining gas

Publications (2)

Publication Number Publication Date
WO2001033625A1 WO2001033625A1 (en) 2001-05-10
WO2001033625A8 true WO2001033625A8 (en) 2001-11-22

Family

ID=23713658

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/030073 WO2001033625A1 (en) 1999-11-02 2000-11-01 Electrostatic wafer clamp having electrostatic seal for retaining gas

Country Status (6)

Country Link
US (1) US6362946B1 (en)
EP (1) EP1226605A1 (en)
JP (1) JP4557200B2 (en)
KR (1) KR100752445B1 (en)
TW (1) TW498481B (en)
WO (1) WO2001033625A1 (en)

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US6839217B1 (en) * 1999-10-01 2005-01-04 Varian Semiconductor Equipment Associates, Inc. Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure
US6538873B1 (en) * 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6741446B2 (en) * 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
JP3832338B2 (en) * 2001-12-25 2006-10-11 松下電工株式会社 Electrostrictive polymer actuator
US6760213B2 (en) * 2002-03-04 2004-07-06 Hitachi High-Technologies Corporation Electrostatic chuck and method of treating substrate using electrostatic chuck
US6734117B2 (en) * 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
FR2878371B1 (en) * 2004-11-25 2007-03-02 Semco Engineering Sa Sa ELECTROSTATIC HOLDING DEVICE WITH SEVERAL POWER SOURCES
US20060124155A1 (en) * 2004-12-13 2006-06-15 Suuronen David E Technique for reducing backside particles
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US8497980B2 (en) * 2007-03-19 2013-07-30 Nikon Corporation Holding apparatus, exposure apparatus, exposure method, and device manufacturing method
US9275820B2 (en) 2013-08-27 2016-03-01 Varian Semiconductor Equipment Associates, Inc. Gas coupled arc chamber cooling
CN117043926A (en) * 2021-03-16 2023-11-10 朗姆研究公司 Tripolar electrode configuration for electrostatic chuck

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Also Published As

Publication number Publication date
KR20020043259A (en) 2002-06-08
JP2003513468A (en) 2003-04-08
EP1226605A1 (en) 2002-07-31
WO2001033625A1 (en) 2001-05-10
KR100752445B1 (en) 2007-08-24
JP4557200B2 (en) 2010-10-06
US6362946B1 (en) 2002-03-26
TW498481B (en) 2002-08-11

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