WO2001039288A1 - Method for patterning devices - Google Patents

Abstract

The invention relates to patterning methods for organic devices, and more particularly to patterning methods using a die. A first layer of organic material (608) is deposited over a substrate (602), followed by a first electrode layer (608). A first patterned die (500) having a raised portion (506) is then pressed onto the first electrode layer (608), such that the raised portion (506) of the first patterned die (500) contacts portions of the first electrode layer (608). The patterned die (500) is removed, such that the portions of the first electrode layer (608) in contact with the raised portions (506) of the first patterned die (500) are removed. In one embodiment of the invention, a second organic layer is then deposited over the first electrode layer, followed by a second electrode layer. A second patterned die having a raised portion is pressed onto the second electrode layer, such that the raised portion of the second patterned die contacts portions of the second electrode layer. The second patterned die is removed, such that the portions of the second electrode layer in contact with the raised portions of the second patterned die are removed. Preferably the patterned die is coated with an adhesive material (508) such as a metal.

Description

METHOD FOR PATTERNING DEVICES

This application is a continuation-in-part of United States Patent Application Serial

No. 09/447,793, filed November 23, 1999. which is incorporated by reference in its entirety.

Field of the Invention

The present invention relates to patterning methods for thin films, and more particularly to patterning methods using a die.

Background of the Invention

Organic light emitting devices (OLEDs), which make use of thin films that emit light

when excited by electric current, are becoming an increasingly popular technology for applications such as flat panel displays. Popular OLED configurations include double

heterostructure, single heterostructure, and single layer, as described in PCT Application WO 96/19792, which is incorporated herein by reference.

To form an array of OLEDs, the constituent materials must be patterned. Such

patterning maybe achieved by photoresist methods, as disclosed by U. S . Patent No.5 ,641 ,611 to Shieh, and in U.S. Patent No. 6,013,528 to Burrows et al. Shadow masks may also be used to pattern, as disclosed by co-pending U.S. Patent Application No. 09/182,636. Shadow

masks must be thick enough to provide mechanical strength and thus, the obtainable resolution of the pattern is limited. Other methods of patterning have been used, such as

excimer laser ablation and conformal masks. While these known patterning methods are acceptable in certain circumstances, a more

accurate, faster and less expensive method of patterning is desirable.

Summary of the Invention

The present invention relates to patterning methods for organic devices, and more

particularly to patterning methods using a die. A first layer of organic materials is deposited

over a substrate, followed by a first electrode layer. A first patterned die having a raised portion is then pressed onto the first electrode layer, such that the raised portion of the first

patterned die contacts portions of the first electrode layer. The patterned die is removed, such

that the portions of the first electrode layer in contact with the raised portions of the first

patterned die are removed. In one embodiment of the invention, a second organic layer is then

deposited over the first electrode layer, followed by a second electrode layer. A second

patterned die having a raised portion is pressed onto the second electrode layer, such that the

raised portion of the second patterned die contacts portions of the second electrode layer. The

second patterned die is removed, such that the portions of the second electrode layer in contact

with the raised portions of the second patterned die are removed. Preferably the patterned die

is coated with an adhesive material such as a metal.

Brief Description of the Drawings

Figure 1 shows a cross-section of a die adapted for use with the present invention.

Figure 2 shows a cross-section of a sample prior to patterning in accordance with the

present invention. Figure 3 shows a cross-section of the die of Figure 1 being used to pattern a sample

similar to that of Figure 2

Figure 4 shows a plan view of the sample of Figure 3 after patterning

Figure 5 shows a patterning process by cold welding followed by lift-off as set forth

in the examples, where silicon stamps having a metal layer are pressed onto unpattemed

OLEDs to obtain patterned OLEDs

Figure 6 shows optical micrographs of a 230 μm diameter dots pattern

Figure 7 shows the results of a comparison of OLEDs patterned by a shadow masking

technique and OLEDs patterned by the stamping technique of the present invention, as

measured by current density vs voltage characteristics and by quantum efficiency vs current

density

Figure 8 shows SEM images of the cross pattern with a width of 55 μm Figure 8(a)

is the magnified image of the square area in Figure 8(b)

Figure 9 shows optical micrographs of the passive matrix w ith 420 μm x 420 μm

pixels

Figure 10 shows CCD camera images of electroluminescence from single and multiple

pixels

Figure 1 1 is a schematic diagram showing elastic deformation of the glass substrate

and lateral expansion of the raised part of a stamp

Figure 12 shows a device partially fabricated m accordance \\ ith an embodiment of

the invention

Figure 13 shows the partially fabricated device of Figure 12 after further processing

Figure 14 shows the partially fabricated device of Figure 13 after further processing Figure 15 shows the partially fabricated device of Figure 14 after further processing.

Figure 16 shows the partially fabricated device of Figure 15 after further processing.

Figure 17 shows the partially fabricated device of Figure 16 after further processing.

Figure 18 shows the partially fabricated device of Figure 17 after further processing,

to create a fully fabricated device.

Figure 19 shows a top view of the device of Figure 18.

Figure 20 shows an illustration of the connection of metal layers at an edge of a device

as achieved by edge masking.

Figure 21 shows the current vs. voltage of actual devices.

Figure 22 shows the quantum efficiency vs. current of actual devices.

Detailed Description

The present invention will be described with reference to the illustrative embodiments

in the following processes and drawing figures.

A method is provided for patterning an electronic device using a die. The device is

fabricated on top of a substrate. Prior to patterning in accordance with the present invention,

patterned layers or a first electrode may be formed on the substrate using techniques known

to the art. Then, a blanket layer of organic material is deposited over the substrate and any

patterned layers or electrodes present thereon. Next, a blanket layer of a metal electrode

material (the "top electrode layer"), is deposited over the organic layer. The top electrode

layer may be for example, a cathode layer or an anode layer. The optional first electrode may

also be a cathode layer or an anode layer. Preferably if the top electrode layer is a cathode

layer, then the first electrode is an anode layer and vice versa. The electronic device may be for example an Organic Light Emitting Device (OLED)

as descπbed for example in U S Patent No 5.707,745, which is incorporated herein by

reference

The blanket layers are patterned with a die having raised and depressed portions that

form a desired pattern According to one embodiment, the die is pressed onto the blanket

layers, such that the raised portions of the die compress underlying layers on the substrate As a result, the organic layers will deform, and the top electrode layer will break at the

juncture between the raised and depressed portions of the die The raised portions of the die

may be coated with a material such that the underlying portions of the top electrode layer stick

to the die, and are removed when the die is lifted away When the raised portions of the die

are not coated with a material such that the underlying portions of the top electrode layer stick

to the die, the compression by the die causes the top electrode layer to break, however, the

residual layer of the top electrode remains part of the patterned electronic device

The die is formed from a hard substance Preferably, the die is made of a substance

that is readily patterned Examples of suitable mateπals that may be used to form dies in

accordance with the present invention include silicon, glass, quartz and hard metals Silicon

is a preferred die material in the laboratory, because it is hard and readily patterned How ever,

different materials may be more suitable for large scale production

Figure 1 shows a cross-section of a die 100 adapted for use with the present invention

Die 100 has a body 102, formed of a hard substance Body 102 has depressed portions 104

and raised portions 106 Depressed portions 104 and raised portions 106 may be formed using

techniques known to the art, such as silicon patterning and etching processes Raised portions

106 are coated with a coating 108 Coating 108 is adapted to adhere well to body 102 Coating 108 is also adapted to adhere well to materials such as metal and mdium tin oxide

(ITO) For example, coating 108 may be a metal or other pressure sensitn e adhesive In

particular, if a metal is used, it should be of the same of approximately the same composition

as the metal to be lifted off of the organic surface On compression, these similar metals form

a strong cold-welded bond

Figure 2 shows a cross-section of a sample 200 prior to patterning m accordance with

the present invention Sample 200 has a substrate 202 made of a material adapted to provide

support Substrate 202 maybe made of any suitable material, including glass, polymers, and

plexiglass Substrate 202 may be rigid, flexible, opaque or transparent Preferably, substrate

202 is made of a material such as glass or plastic A bottom electrode 204, made of a

conductive material, is deposited onto substrate 202 using techniques known to the art

Preferably, bottom electrode 204 is made of a transparent conductive mateπal, such as ITO

In one embodiment the bottom electrode 204 may be patterned into stπps, as discussed m

further detail with reference to Figure 4, using techniques known to the art Organic layer 206

is blanket deposited over bottom electrode 204 Organic layer 206 may compπse a single

layer or a plurality of layers For example, organic layer 206 may compπse the multiple

organic layers of a single or double heterostructure OLED, as described m U S Patent No

5,707,745, and which is incorporated by reference Top electrode layer 208 is blanket

deposited over organic layer 206 Top electrode layer 208 is made of a conductive material

such as a metal, a metal alloy or ITO

Figure 3 shows a cross-section of die 100 of Figure 1 being used to pattern a sample

300 similar to sample 200 of Figure 2 into an array of OLEDs Substrate 302, bottom

electrode 304, organic layer 306 (comprising regions 306a and 306b) and top electrode layer 308 (comprising top electrode 308a and region 308b) of Figure 3 correspond to substrate 202,

bottom electrode 204, organic layer 206 and top electrode layer 208 of Figure 2

Die 100 is pressed onto sample 300, and raised portions 106 of die 100 contacts the

upper portion of sample 300 Regions 308b of top electrode layer 308 stick to coating 108,

and are removed when die 100 is lifted away from sample 300 Top electrode 308a (the

remaining portion of top electrode layer 308) does not stick to the die

Figure 4 shows one of many possible different plan views of sample 300 after patterning as descπbed with reference to Figure 3 In figure 4, a passive display is being

formulated In particular, Figure 3 is a cross-section of Figure 4 through line 3' Bottom

electrodes 304 are patterned into strips using techniques known to the art, prior to the

deposition of organic layer 306 and top electrode layer 308, and prior to the compression of

sample 300 by die 100 After compression, top electrode layer 308 has been patterned to form

top electrodes 308a Regions 306a are exposed because regions 308b of top electrode layer

308 have been removed by die 100

In one embodiment of the invention, Sample 300 as shown m Figure 4 forms a 3x2

aπay of electronic devices In particular, electronic devices 402, 404, 406, 408, 410 and 412

have been fabricated at the intersection of bottom electrodes 304 with top electrodes 308a

Each of these electronic may be independently addressed by controlling the voltages of bottom

electrodes 304 and top electrodes 308a, using passive matrix addressing techniques known

to the art

It is to be understood that the present invention may be used to fabricate much larger

arrays of organic devices than those specifically descπbed herein Moreover, a multi-color

display may be fabricated by depositing various down-conversion layers known to the art For example, organic layer 206 may be made of a material that emits blue light, and patterned

blue-to-green and blue-to-red down conversion layers maybe deposited on substrate 202 prior

to the deposition of bottom electrodes 204. These down-conversion layers may be patterned

such that an array of organic devices ultimately fabricated forms an array of three-color pixels,

where each pixel comprises three organic devices — one with no down conversion layer that

emits blue, one with a blue-to-green down conversion layer that emits green, and one with a

blue-to-red down conversion layer that emits red

The organic layers may emit light through any of a number of mechanisms The

emission of light is geneπcally referred to as "luminescence " Specific luminescent

mechanisms include phosphorescence and fluorescence For purposes of the present

invention, any type of luminescence may be used in any of the embodiments

Examples

A method according to the present invention for the direct micropattermng of OLED

displays by post-deposition stamping was performed Specifically an unpattemed OLED was

patterned such that a cathode layer of the OLED was selectively lifted off of an OLED by pressing a patterned silicon stamp (i.e , a die) with a metal layer, onto the unpattemed OLED.

In this post-deposition stamping method, the stamp contained a metal coating, which cold

welded to the cathode of the unpattemed OLED when the metal coating and the cathode were

contacted with one another When the stamp was removed from the OLED, the cathode was

selectively removed from the OLED m essentially the same pattern m which the metal was

placed on the stamp In the present examples, a patterning process as shown in Figure 5 was used First,

an unpattemed small molecule OLED structure having an anode 604, one or more organic

layers 606 and a cathode 608 was vacuum deposited over the entire substrate area 602 Pπor

to film deposition, the glass substrate 602 was precoated with -1500A thick, transparent,

conductive (20 Ω/D) mdium tin oxide (ITO) anode was cleaned, followed by 2 minutes of oxygen plasma treatment (31 W RF power, 50 seem oxygen flow rate, 100 mTorr chamber

pressure) The OLED was a single heterostructure device having a 500A thick hole transpoit

layer of 4,4'-bιs[N-(l-napthyl)-N-phenyl-ammo]bιphenyl(α-NPD) as hole transport material

and a 500A thick electron transport and light emitting layer of tπs-(8-

hydroxyquιnolιne)alumιnum (Alq ) as both electron transport and light emitting material The

cathode consisted of a 400A thick Mg Ag alloy cathode capped with a 300A thick Ag layer

To pattern the OLEDs, a stamp (or die) 500 was formed In forming the stamp, a

silicon wafer was processed using conventional photolithography Using SiO, as a mask, the

wafer was etched by chlorine-based reactive ion etching (RIE) and by wet etching (HF-H O -

CH,COOH mixture etching) For wet etching, an etchant composition (by volume) of

7% 70% 23% (HF HNO, CH, COOH) was used and the etch rate was ~2μm/mιn The

resulting pattern on the silicon stamp was the negative image of a desired OLED pattern The

silicon stamp 702 was coated with a metal coating 708 having a 50A thick Cr adhesion layer

and a 150A ~ 200A thick Ag la er, which was deposited by conventional e-beam evapoi ation

To create the OLED pattern, the stamp was pressed onto the unpattemed OLEDs to

induce cold welding between the OLED cathode and the silver on the stamp The piessing

was performed using an Instron Dynamic Testing System (model 8501), which applies force using a hydraulic actuator. The substrate and the stamp were placed on a lower cylinder-

shaped platen and compressive force was applied by moving up the lower platen to a fixed

upper platen. The applied force increased from zero to maximum linearly with respect to

time, and the maximum force and ramp rate were computer controlled. Throughout the

experiment, glass substrates 602 having a size of about 10 mm x 10 mm were used.

The results for a 230 μm diameter dots pattern are shown in Figures 6a and 6b. The

ITO layer was not patterned and the maximum force of the pressing was ~35 kN, corresponding to an average pressure of ~290MPa. The ramp rate was 1 kN/s and the sample

was kept under pressure for 5 minutes after the maximum force was reached. Silicon stamps

with an etched depth of ~10 μm were used. This depth was chosen to try and prevent possible

unintentional contact of the stamp to the cathode layer due to the possible deformation of the

glass substrate. This consideration is particularly important with regard to larger patterns. As

shown in Figures 6a and 6b, a pattern transfer with high yield was achieved.

Figure 7 compares the 1 mm diameter OLEDs patterned by the present technique with

OLEDs patterned using a conventional shadow mask technique. Current density versus

voltage (J-V) and external quantum efficiency versus current density are shown in Figure 7.

V_|0 is defined as voltage corresponding to current density of 10 mA/cm². Figure 7 shows that

no apparent degradation was induced by this method.

Figures 8a and 8b show a cross pattern with a width of 55 μm obtained by the present

method. There was no significant peel-off of the cathode. It is noted that some of the organic

materials were also removed. The patterning of the OLEDs in these experiments were performed in ambient

laboratory conditions, hence neither the stamps nor the OLEDs were protected from dust,

oxygen, water vapor, etc.

To demonstrate a possible application of the present method to flat panel displays, a

passive matrix having a pixel size of 420 μm x 420 μm was fabricated. First, parallel lines

of a ~ 1500 A thick ITO layer were obtained by conventional photolithography and wet etching.

After performing a cleaning step, organic single heterostructure and cathode layers were

subsequently deposited on the patterned ITO layer (as described above). Next the substrate

was pressed perpendicularly with the stamp with a parallel line pattern to obtain a passive

matrix. The maximum force applied during the pressing was ~8 kN (i.e., a pressure of -380

MPa) and the ramp rate was 1 kN/s. The sample was kept under pressure for 5 minutes after

the maximum pressure was reached. Figures 9a and 9b show the achieved pattern. Figures

10a and 10b show CCD camera images of the individually and multiply turned on pixels

respectively. For the individually turned on pixel in Figures 10a and 10b, the whole column

and the whole row were faintly turned on. However, this is believed to be due to reverse

leakage current, a problem inherent to the devices.

As two solid surfaces (e.g., the metal layer on the stamp and the cathode of the OLED)

are brought into contact, they can be bonded to each other when the interfacial separation is

decreased below a critical value, resulting in a single solid. Therefore, to achieve good

patterns by this technique, the applied pressure should be high enough to decrease the

interfacial separation below the critical value.

The stress distribution in the cathode layer should also be considered. This problem

may be considered an elastic contact problem between the silicon stamp and the glass substrate with finite friction Normal contact stress is very large at the edge of the contact

region It is believed that the cathode layer is locally weakened at the edge of the contact

region due to the highly concentrated normal stress Also, due to the relatively high applied

pressure, plastic deformation of the cathode and organic layers should be taken into

consideration

As applied pressure increases gradually, the raised part of the stamp expands laterally

as determined by the applied pressure and poisson ratio See Figure 1 1 This is expected to

help local weakening Therefore, as a result, the fracture along the weakened boundaries

occurs upon separation of the stamps from the OLEDs, giving sharp pattern edges The

applied pressure should be high enough to decrease the interfacial separation of silver layers

below the critical value and also to induce the local weakening of the metal layers along the

edges of the contact region An optimum pressure was determined to be about 250 MPa to

about 400 MPa

When the stamp is applied to the device, the substrate of the device may bend such

that the device bows into the depressed portions of the die Contact between the device and

the depressed portion of the die is undesirable, and could lead to the removal of layers that are

supposed to remain on the device To avoid such contact, various parameters may be

controlled For example, stiffer substrates and lower forces applied to the die are two factors

that may be used to eliminate such contact Alternatively, if a flexible substrate is used, the

substrate may be mounted on a stiff support structure, if desired Still other means may be

used to keep the flexible substrate sufficiently rigid to maintain the desired tolerances

Another important factor is the geometry of the die In particular, by increasing the depth of

the depressed portions, or by decreasing the separation between the raised portions, such contact may be avoided It is believed that a depth of about 10 microns per 1 millimeter of

separation is preferred to avoid such contact, although this ratio may change depending upon

the particular substrate and forces

Full Color OLED By Stamping In one embodiment of the invention, several different patterning steps may be

performed with patterned dies As a result, devices such as full color OLED displays may be

fabricated For example, a full color OLED may be fabricated as illustrated in Figures 12-18

Figure 12 shows a partially fabricated device 1200 A substrate 1220 has a first

electrode 1225 and insulating strips 1227 fabricated thereon using conventional patterning

methods A blanket organic layer 1230 and a blanket electrode layer 1240 are then blanket

deposited over the underlying features A patterned die 1210, having raised portions 1212 and

depressed portions 1214, is then pressed onto device 1200 Blanket electrode layer 1240 is

then patterned in a manner similar to that described previously with respect to Figures 1 - 3

Figure 13 shows the partially fabricated device 1200 of Figure 12 after further

processing In particular, patterned die 1210 has been pressed onto device 1200 and remo\ ed

Removed portion 1240b of blanket electrode layer 1240 has adhered to and been removed by

die 1210 Removed portion 1230b of blanket organic layer 1230 has adhered to portion

1240b, and has also been removed by die 1210 Portion 1230c of blanket organic layer 1230

has remained on device 1200, but remains exposed by the removal of removed portion 1240b

First operational organic layer 1230a remains on device 1200, in electrical contact with first

electrode 1225 Second electrode 1240a also remains on device 1200, in electrical contact

with first organic layer 1230a Figure 13 depicts removed portion 1230b of blanket organic layer 1230 adhered to die

1210, and portion 1230c of blanket organic layei 1230 remaining on device 1200 However,

depending on the adhesion of the various layers, the part of blanket organic layer 1230

underlying portion 1240b of second electrode layer 1240 may be entirely removed by die

1210, i e , there is no portion 1230c remaining after die 1210 is removed Alternatively, the

part of organic layer 1230 underlying portion 1240b of second electrode layer 1240 may

remain entirely on device 1200, t e , there is no portion 1230b

Figure 14 shows the partially fabricated device 1200 of Figure 13 after further

processing Anyportion 1230c ofblanket organic layer 1230 that remained after die 1210 was

lifted away has been removed The removal of portion 1230c may be accomplished by any

suitable technique that does not damage device 1200 In particular, the removal process

should be chosen to minimize damage to electrode 1240a, and any reagent used should not

be reactive with electrode 1240a Preferably, reactive ion etching is used to remove portion

1230c Reactive ion etching with a combination of CF₄ and O₂ or with just 0₂ may be used

A combination of CF₄ and 0₂ is preferable when portion 1230c includes Alq, which is rapidly

removed by this combination A thm protective layer of gold may be deposited as a part of

electrode 1240a to provide protection from the removal process, particularly if reactive ion

etching with CF₄ and O₂ is used

Insulating strips 1227 may prevent the formation of possible shorts between first

electrode 1220 and the other electrodes dunng stamping with dies 1210, 1510 and 1710

Insulating stπps 1227 run parallel to second electrode 1540a, and may be made of any non-

conductive material that provides suitable protection Preferably, insulating stπps 1227 are

made of SιN or Sι0₂ Insulating strips 1227 may not be necessary, and may be omitted from device 1200, if the formation of such shorts is within acceptable tolerances even without

insulating stπps 1227

Figure 15 shows the partially fabricated device 1200 of Figure 14 after further

processing A blanket organic layer 1530 and a blanket electrode layer 1540 have been

blanket deposited over the underlying layers A patterned die 1510 having raised portions

1512 and depressed portions 1514 is positioned over device 1200 A process similar to that described in Figures 12-14 is used to remove the portions of blanket organic layer 1530 and

blanket electrode layer 1540 that correspond to raised portions 1512 of die 1510

Figure 16 shows the partially fabricated device 1200 of Figure 15 after further

processing, in particular after die 1510 has been removed and any remaining exposed portion

of blanket organic layer 1530 has been removed Second operational organic layer 1530a of

blanket organic layer 1530 remains on device 1200, in electrical contact with first electrode

1225 Third electrode 1540a remains on device 1200, in electπcal contact with second

operational organic layer 1530a Residual portion 1530d of blanket organic layer 1530, and

residual portion 1540d of blanket electrode layer 1540, also remain on top of second electrode

1240a

Figures 15 and 16 show that die 1510 has depressed portions 1514 above previously

fabricated operational organic layer 1230a and second electrode 1240a These depressed

portions lead to the fabrication of residual portions 1530d and 1540d These residual portions

are not necessary to the operation of device 1200 However, it is believed that having a

depressed portion, such as depressed portion 1514, above previously fabricated areas that will

eventually be functioning parts of device 1200, such as operational organic layer 1230a and

second electrode 1240a, minimizes damage to these previously fabricated functioning parts during subsequent stamping procedures. If previously fabricated functioning parts can

withstand the pressure of stamping and still function within desired parameters, it may not be

necessary to protect them in this manner.

Figure 17 shows the partially fabricated device 1200 of Figure 16 after further

processing. A blanket organic layer 1730 and a blanket electrode layer 1740 have been

blanket deposited over the underlying layers. A patterned die 1710 having raised portions

1712 and depressed portions 1714 is positioned over device 1200. A process similar to that

described in Figures 12-14 is used to remove the portions of blanket organic layer 1730 and

blanket electrode layer 1740 that correspond to raised portions 1712 of die 1710.

Figure 18 shows the device 1200 of Figure 17 after further processing, to create a fully

fabricated device. In particular, die 1710 has been removed, and any remaining exposed

portion of second organic layer 1730 has been removed. Third operational organic layer

1730a of blanket organic layer 1730 remains on device 1200, in electrical contact with first

electrode 1225. Fourth electrode 1740a remains on device 1200, in electrical contact with

third operational organic layer 1730a. Residual portion 1730d of blanket organic layer 1730,

and residual portion 1740d of blanket electrode layer 1740, also remain on top of third

electrode 1540a, as well as on top of residual portion 1540d.

Figure 19 shows atop view of the device of Figure 18. Figures 12 - 18 are taken from

a cross section of Figure 19 along line 1. For clarity, only the operational electrodes, i.e., first

electrode 1225, second electrode 1240a, third electrode 1540a, and fourth electrode 1740a,

are illustrated in Figure 19. As illustrated in Figure 18, several of these electrodes are actually

covered by residual layers, not shown in Figure 19. Preferably, any residual portions of blanket electrode layers 1540 and 1740, i e ,

residual portions 1540d and 1740d, are electrically connected to the operational electrode

layers running directly below and parallel to them, to avoid unwanted electπcally floating

residual portions of blanket electrode layers, and/or to avoid voltage differences across

residual organic portions In particular, with reference to Figure 18, second electrode 1240a

is preferably electπcally connected to residual portion 1540d and residual portion 1740d that

are directly above second electrode 1240a Similarly, third electrode 1540a is preferably electrically connected to residual portion 1740d directly above third electrode 1540a This

electrical connection may be achieved in a number of ways Figure 20 shows an illustration

of one possible way to achieve this connection through edge masking In particular, blanket

layers 1230, 1240, 1530, 1540, 1730 and 1740 are deposited through shadow masks having

one large opening in the center, such that the edges of device 1200 are masked The masks

used to deposit blanket electrode layers 1240, 1540 and 1740 have openings larger than those

used to deposit blanket organic layers 1230, 1530 and 1730 As a result, residual portions

1540d and 1740d are in electπcal contact with second electrode 1230 at the edge of device

1200 Third electrode 1530 is similarly in electrical contact with its overlying residual portion

1740d

Electrical contact between electrodes 1230a and 1530a with overlying residual

portions 1530d and 1730d may also be achieved without the use of edge masking by driving

a conductive rod through the electrodes and any overlying residual portions at the edge of the

device

Operational organic layers 1230a, 1530a and 1730a emit light when current is passed

through them In particular, first operational organic layer 1230a emits light when a current is applied between first electrode 1225 and second electrode 1240a. Second operational

organic layer 1530a emits light when a current is applied between first electrode 1225 and

third electrode 1540a. Operational organic layer 1230a emits light when a current is applied

between first electrode 1225 and second electrode 1240a. Device 1200 as shown in Figure

18 may be a full color OLED. For example, operational organic layer 1230a may emit red

light, operational organic layer 1530a may emit green light, and operational organic layer 1730

may emit blue light.

Although various embodiments of the invention are illustrated with simplified organic

layers and electrodes, additional layers and sublayers may be present. For example,

operational organic layer 1230a may comprise multiple sublayers as described with respect

to Figure 2. Additional layers may also be present. For example, a hole injecting layer may

also be present, such as described in United States Patent No. 5,998,803 to Forrest et al.,

which is incorporated by reference. The presence of such a hole injecting layer between an

electrode and an organic layer may block physical contact between the electrode and the

organic layer, but does not change the fact that the electrode and organic layer are in electrical

contact. Additional layers as known to the art may also be present.

The embodiment of Figures 12-20 may be practiced using dies, materials, and process

parameters similar to those described with respect to Figures 1-11.

Preferably, each of the organic layers and each electrode is about 1000A thick.

Preferably, first electrode 1225 is ITO, although any other suitable transparent electrode may

be used. Preferably, second electrode 1240a, third electrode 1540a, and fourth electrode

1740a comprise a layer of Mg/Ag alloy about 1000A thick, coated with a layer of Au about

100A thick. However, any suitable electrode may be used, such as a LiF / Al electrode. In the embodiment of Figures 12-20, the die should be properly positioned during the

stamping process. In particular, the die should be positioned accurately with respect to

features already on device 1200 during the stamping illustrated in Figures 15 and 17. This

alignment may be achieved using techniques know to the art, such as optical alignment using

IR light projected through the bottom of the device, fiducial alignment using light scattering,

and any other suitable technique. To the extent that the blanket electrode layers interfere with

such alignment techniques, edge masking may be used during deposition to provide an area

of the device that is free from the blanket deposition of metal.

Further Examples

Two arrays of OLEDs were sequentially fabricated on a single substrate. Although

no stamping was used, organic layers were removed by reactive ion etching in between the

fabrication of the two arrays. This demonstrates that the first array did not suffer adverse

effects from exposure to reactive ion etching, and that the second array could be successfully

fabricated using bottom electrodes that had been exposed to reactive ion etching.

In particular, a conventional substrate covered with a layer of ITO was obtained. This

layer of ITO was not patterned, and serves as the common bottom electrode (anode) of each

device in each of the arrays. As a result, this example is not intended to demonstrate an array

where each pixel is individually addressable, but rather to demonstrate that working OLEDs

may be fabricated. A 500 A thick layer of α-NPD was blanket deposited over the ITO,

followed by a 500 A thick layer of Alq, to form the organic layers of a conventional single

heterostructure OLED. The top electrodes (cathodes) of the first array only were then deposited through shadow masks. The first array was confined to less than half of the

substrate.

The characteristics of the first array of devices were measured. Figure 21 shows the

current vs. voltage, and Figure 22 shows the quantum efficiency vs. current of these devices.

In particular, lines 2110 and 21 15 of Figure 21 show the current vs. voltage, and lines 2210 and 2215 of Figure 22 show the quantum efficiency vs. current.

Reactive ion etching with a combination of CF₄ and 0₂ was then used to remove the

exposed organic layers, i.e., the parts of the organic layers not covered by the top electrodes of the first array of devices. The characteristics of the first array of devices were then

measured again. Lines 2120 and 2125 of Figure 21 show current vs. voltage, and lines 2220

and 2225 of Figure 22 show the quantum efficiency vs. current. The closeness of lines 2120

and 2125 to lines 2110 and 2115, as well as the closeness of lines 2220 and 2225 to lines 2210

and 2215, show that the reactive ion etch did not adversely affect the devices in the first array.

A second 500 A thick layer of α-NPD was then blanket deposited over the entire

substrate, including the first array of devices, followed by a second 500 A thick layer of Alq,

to form the organic layers of a conventional single heterostructure OLED. The top electrodes

of the second array were then deposited through a shadow mask onto a portion of the substrate

not occupied by the first array.

The characteristics of the second array of devices were measured. Lines 2130 and

2135 of Figure 21 show the current vs. voltage, and lines 2230 and 2235 of Figure 22 show

the quantum efficiency vs. current. The closeness of lines 2130 and 2135 to lines 2120 and

2125, as well as the closeness of lines 2230 and 2235 to lines 2210 and 2215, demonstrate the successful fabrication of an OLED using a bottom electrode that has been previously coated

with organic material, and then cleaned with reactive ion etching

Reactive ion etching with a combination of CF₄ and 0₂ was then used to remove the

exposed organic layers, i e , the parts of the organic layers not covered by the top electrodes

of the second array of devices This reactive ion etching also removed the organic mateπal

that had been deposited over the first array of devices The characteristics of the second array of devices were then measured again Lines 2140 and 2145 of Figure 21 show current vs

voltage, and lines 2240 and 2245 of Figure 22 show the quantum efficiency vs current, for

the second array of devices The characteπstics of the first array of devices were also

measured again Lines 2150 and 2155 of Figure 21 show current vs voltage, and lines 2250

and 2255 of Figure 22 show the quantum efficiency vs current for the first array of devices

The closeness of lines 2140, 2145, 2150 and 2155 to the other lines on Figure 21, as

well as the closeness of lines 2240, 2245, 2250 and 2255 to the other lines on Figure 22, show

that the second reactive ion etch did not adversely affect the devices in either array

Conclusion

The method of the present invention has several advantages over previously reported

patterning techniques For example, the present method is very cost-effective, because the

stamps are reusable In embodiments where the stamps have metal layers, the stamps are

reusable after the metal layers are removed by wet etching The method of the present

invention also offers high throughput Large areas, such as display panels, can be patterned

in one step

Additionally, the method of the present invention is well suited for roll-to-roll

fabrication processes that use flexible plastic substrates By using roller stamps, large area patterning can be performed more easily for flexible substrates, since optimum pressure can

be applied with smaller forces due to decreased contact areas. The method of the present

invention allows simple, cost-effective and high throughput fabrication of OLEDs and other

electronic devices and can be applied to the fabrication of flat panel displays, for example.

The embodiment of Figures 12-20 provides several unexpected and advantageous

features over the other embodiments of the present invention. The embodiment of Figures 12-

20 allows different organic layers to be incorporated into different devices in the same array.

For example, operational organic layer 1230a can be different from operational organic layer

1530a, which can in turn be different from operational organic layer 1730a. This allows for

the fabrication of a full color display without the use of down-conversion layers. The use of

multiple stamps is one unexpected and advantageous feature of the embodiment of Figures

12-20. Another is the ability to remove residual organic layers after stamping without

damaging existing devices, and such that the first electrode 1225 exposed by such removal

may be used for the fabrication of further devices.

While the present invention is described with respect to particular examples and

preferred embodiments, it is understood that the present invention is not limited to these

examples and embodiments. In particular, the present invention is not limited to OLEDs, and

may be applied to a wide variety of electronic devices. In addition, with respect to OLEDs,

the present invention is not limited to the particular examples and embodiments described.

The present invention as claimed therefore includes variations from the particular examples

and preferred embodiments described herein, as will be apparent to one of skill in the art.

Claims

WHAT IS CLAIMED IS:

1. A method of fabricating an organic device, comprising

(a) depositing a first layer comprising organic materials over a substrate;

(b) depositing over said first layer a second layer comprising an electrode material;

(c) pressing a patterned die having a raised portion onto the second layer; and

(d) removing the patterned die.

2. The method of claim 1, wherein the patterned die comprises silicon.

3. The method of claim 1, wherein the patterned die has a raised portion that is coated

with an adhesive material.

4. The method of claim 3, wherein the adhesive material comprises at least one metal.

5. The method of claim 3, wherein the adhesive material comprises glue.

6. The method of claim 1, wherein a third layer is deposited over the substrate prior to

depositing a first layer.

7. The method of claim 6, wherein the third layer is patterned prior to depositing a first

layer.

8. The method of claim 6, wherein the method is used to fabricate a passive array of

organic light emitting devices, each device having a bottom electrode formed from the third

layer, an organic light emitting layer formed from the first layer, and a top electrode formed

from the second layer.

9. The method of claim 6, wherein the third layer comprises an electrode material.

10. The method of claim 9, wherein the third layer is selected from the group consisting of metals and metal oxides.

11. The method of claim 1 , wherein the second layer is selected from the group consisting

of metals and metal oxides.

12. A patterned die comprising raised portions coated with an adhesive material.

13. The patterned die of claim 12, wherein the adhesive material comprises a metal.

14. The patterned die of claim 12, wherein the adhesive material comprises a metal alloy.

15. The patterned die of claim 12, wherein the patterned die comprises silicon.

16. A method of fabricating an organic device, comprising:

(a) depositing a first organic layer over a substrate; (b) depositing a first electrode layer over the first organic layer;

(c) pressing a first patterned die having a raised portion onto the first electrode

layer, such that the raised portion of the first patterned die contacts portions

of the first electrode layer;

(d) removing the first patterned die, such that the portions of the first electrode

layer in contact with the raised portions of the first patterned die are removed;

(e) depositing a second organic layer over the first electrode layer;

(f) depositing a second electrode layer over the second organic layer;

(g) pressing a second patterned die having a raised portion onto the second

electrode layer, such that the raised portion of the second patterned die

contacts portions of the second electrode layer;

(h) removing the second patterned die, such that the portions of the second

electrode layer in contact with the raised portions of the second patterned die

are removed.

17. The method of claim 16, further comprising the steps of:

(i) depositing a third organic layer over the second electrode layer;

(j ) depositing a third electrode layer over the third organic layer;

(k) pressing a third patterned die having a raised portion onto the third electrode

layer, such that the raised portion of the third patterned die contacts portions

of the third electrode layer;

(1) removing the third patterned die, such that the portions of the third electrode

layer in contact with the raised portions of the third patterned die are removed.

18. The method of claim 16, further comprising the steps of:

after step (d) and before step (e), removing portions of the first organic layer exposed

by the removal of portions of the first electrode layer in step (d);

after step (g) and before step (h), removing portions of the second organic layer

exposed by the removal of portions of the second electrode layer in step (g).

19. The method of claim 18, wherein portions of the first organic layer are removed by

reactive ion etching.

20. The method of claim 19, wherein portions of the first organic layer are removed by

reactive ion etching with a combination of CF₄ and O₂.

21. The method of claim 19, wherein portions of the first organic layer are removed by

reactive ion etching with O₂.

22. The method of claim 16, wherein the portions of the first electrode layer in contact

with the raised portion of the first patterned die during step (c) adhere to the first patterned die

during step (c).

23. The method of claim 22, wherein the adhesion is due to cold-welding.

24. A method of fabricating an organic device, comprising:

(a) depositing a first organic layer over a substrate; (b) depositing a first electrode layer over the first organic layer;

(c) pressing a first patterned die having a raised portion onto the first electrode

layer;

(d) removing the first patterned die;

(e) depositing a second organic layer over the first electrode layer;

(f) depositing a second electrode layer over the second organic layer;

(g) pressing a second patterned die having a raised portion onto the second

electrode layer;

(h) removing the second patterned die.

25. The method of claim 16, wherein the patterned die comprises silicon.

26. The method of claim 16, wherein the patterned die has a raised portion that is coated

with an adhesive material.

27. The method of claim 26, wherein the adhesive material comprises at least one metal.

28. The method of claim 26, wherein the adhesive material comprises glue.