WO2001043183A3 - Electrostatic chuck, susceptor and method for fabrication - Google Patents

Electrostatic chuck, susceptor and method for fabrication Download PDF

Info

Publication number
WO2001043183A3
WO2001043183A3 PCT/US2000/042553 US0042553W WO0143183A3 WO 2001043183 A3 WO2001043183 A3 WO 2001043183A3 US 0042553 W US0042553 W US 0042553W WO 0143183 A3 WO0143183 A3 WO 0143183A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
electrical contact
essentially
electrode
electrostatic chuck
Prior art date
Application number
PCT/US2000/042553
Other languages
French (fr)
Other versions
WO2001043183A2 (en
WO2001043183A9 (en
Inventor
Ramesh Divakar
Morteza Zandi
Original Assignee
Saint Gobain Ceramics
Ramesh Divakar
Morteza Zandi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics, Ramesh Divakar, Morteza Zandi filed Critical Saint Gobain Ceramics
Priority to AU45160/01A priority Critical patent/AU4516001A/en
Priority to GB0215883A priority patent/GB2375889B/en
Priority to DE10085266T priority patent/DE10085266B4/en
Priority to JP2001543772A priority patent/JP4768185B2/en
Publication of WO2001043183A2 publication Critical patent/WO2001043183A2/en
Publication of WO2001043183A3 publication Critical patent/WO2001043183A3/en
Publication of WO2001043183A9 publication Critical patent/WO2001043183A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

An electrostatic chuck, or susceptor, includes an electrode and/or heating element embedded in a ceramic body, and has an electrical contact extending from the electrode. The electrode or heating element can be fabricated, for example, from molybdenum and the chuck body from aluminum nitride. The electrical contact includes a first metal and a second metal in a composition ratio wherein essentially all of the second metal is dissolved in the first metal, thereby essentially preventing formation of intermetallic species of the first and second metals. One example of an electrical contact includes about 99.8 weight percent molybdenum and about 0.2 weight percent nickel. Alternatively, the electrode can be fabricated from a first metal and a second metal in a composition ratio wherein essentially all of the second metal is dissolved in the first metal, thereby essentially preventing formation of intermetallic species of the first and second metals. The electrical contact can be fabricated from a metal such as molybdenum, or from an alloy of a first and second metal wherein essentially all of the second metal is dissolved in the first metal. The electrical contact can be formed in situ by the densification of a premixed metal powder precursor during the hot pressing step employed in fabricating the electrostatic chuck.
PCT/US2000/042553 1999-12-09 2000-12-05 Electrostatic chuck, susceptor and method for fabrication WO2001043183A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU45160/01A AU4516001A (en) 1999-12-09 2000-12-05 Electrostatic chuck, susceptor and method for fabrication
GB0215883A GB2375889B (en) 1999-12-09 2000-12-05 Electrostatic chuck, susceptor and method for fabrication
DE10085266T DE10085266B4 (en) 1999-12-09 2000-12-05 Electrostatic disk holder
JP2001543772A JP4768185B2 (en) 1999-12-09 2000-12-05 Electrostatic chuck, susceptor and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/457,968 US6603650B1 (en) 1999-12-09 1999-12-09 Electrostatic chuck susceptor and method for fabrication
US09/457,968 1999-12-09

Publications (3)

Publication Number Publication Date
WO2001043183A2 WO2001043183A2 (en) 2001-06-14
WO2001043183A3 true WO2001043183A3 (en) 2002-05-10
WO2001043183A9 WO2001043183A9 (en) 2002-11-28

Family

ID=23818807

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/042553 WO2001043183A2 (en) 1999-12-09 2000-12-05 Electrostatic chuck, susceptor and method for fabrication

Country Status (8)

Country Link
US (1) US6603650B1 (en)
JP (1) JP4768185B2 (en)
KR (1) KR100459748B1 (en)
CN (1) CN1275309C (en)
AU (1) AU4516001A (en)
DE (1) DE10085266B4 (en)
GB (1) GB2375889B (en)
WO (1) WO2001043183A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
CN1655022A (en) * 2004-02-14 2005-08-17 鸿富锦精密工业（深圳）有限公司 Substrate applying device
TWI350394B (en) * 2004-04-16 2011-10-11 Chimei Innolux Corp Apparatus and method for connecting two substrates
JP4542485B2 (en) 2004-12-14 2010-09-15 日本碍子株式会社 Alumina member and manufacturing method thereof
JP2007258610A (en) 2006-03-24 2007-10-04 Ngk Insulators Ltd Alumina sintered body
JP5094863B2 (en) * 2007-07-23 2012-12-12 株式会社クリエイティブ テクノロジー Substrate adsorption apparatus and manufacturing method thereof
JP4469006B2 (en) * 2007-09-25 2010-05-26 キヤノンアネルバ株式会社 Manufacturing method of display substrate
TWI450353B (en) * 2008-01-08 2014-08-21 Ngk Insulators Ltd A bonding structure and a semiconductor manufacturing apparatus
DE102008035240B4 (en) * 2008-07-29 2017-07-06 Ivoclar Vivadent Ag Device for heating molded parts, in particular dental ceramic molded parts
KR102382823B1 (en) 2015-09-04 2022-04-06 삼성전자주식회사 ring unit having air holes and substrate processing apparatus including the same

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EP0506537A1 (en) * 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
EP0791956A2 (en) * 1995-09-06 1997-08-27 Ngk Insulators, Ltd. Electrostatic chuck
EP0856881A2 (en) * 1997-01-29 1998-08-05 Ngk Insulators, Ltd. Joint structure of metal member and ceramic member and method of producing the same
EP0886312A2 (en) * 1997-06-20 1998-12-23 Ngk Insulators, Ltd. Ceramics joint structure and method of producing the same
US5880922A (en) * 1995-03-10 1999-03-09 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
EP1030364A2 (en) * 1999-02-17 2000-08-23 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication

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JPS6278170A (en) * 1985-10-02 1987-04-10 三菱重工業株式会社 Bonded body of sic or si3n4 and metal
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US4778778A (en) 1987-06-03 1988-10-18 Keramont Advanced Ceramic Products Corporation Process for the production of sintered aluminum nitrides
JP3016514B2 (en) * 1988-12-19 2000-03-06 株式会社東芝 Heat resistant molybdenum wire
US4992253A (en) 1989-12-29 1991-02-12 National Science Council Process for producing an ultrafine powder of aluminum nitride
EP0493089B1 (en) 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Wafer heating apparatus and method for producing the same
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JPH06737A (en) 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd Electrostatic chuck base sheet
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JPH06326175A (en) 1993-04-22 1994-11-25 Applied Materials Inc Protective coating for dielectric material of wafer support used in integrated circuit processing equipment and formation method therefor
EP0635870A1 (en) 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
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US5677253A (en) 1995-03-30 1997-10-14 Kyocera Corporation Wafer holding member
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
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US5633073A (en) * 1995-07-14 1997-05-27 Applied Materials, Inc. Ceramic susceptor with embedded metal electrode and eutectic connection
DE69635908T2 (en) 1995-08-03 2006-11-23 Ngk Insulators, Ltd., Nagoya Sintered aluminum nitride bodies and their use as a substrate in an apparatus for producing semiconductors
JP3670416B2 (en) 1995-11-01 2005-07-13 日本碍子株式会社 Metal inclusion material and electrostatic chuck
US6017485A (en) 1996-03-28 2000-01-25 Carborundum Corporation Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck
US5764471A (en) 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5708557A (en) 1996-08-22 1998-01-13 Packard Hughes Interconnect Company Puncture-resistant electrostatic chuck with flat surface and method of making the same
US5958813A (en) 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
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JP3271601B2 (en) * 1998-03-05 2002-04-02 ウシオ電機株式会社 Electric introduction body for tube and method of manufacturing the same
GB2375231A (en) * 1999-12-09 2002-11-06 Saint Gobain Ceramics Electrostatic chucks with flat film electrode
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0360529A2 (en) * 1988-09-19 1990-03-28 Toto Ltd. Electrostatic chuck
EP0506537A1 (en) * 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
US5880922A (en) * 1995-03-10 1999-03-09 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
EP0791956A2 (en) * 1995-09-06 1997-08-27 Ngk Insulators, Ltd. Electrostatic chuck
EP0856881A2 (en) * 1997-01-29 1998-08-05 Ngk Insulators, Ltd. Joint structure of metal member and ceramic member and method of producing the same
EP0886312A2 (en) * 1997-06-20 1998-12-23 Ngk Insulators, Ltd. Ceramics joint structure and method of producing the same
EP1030364A2 (en) * 1999-02-17 2000-08-23 Applied Materials, Inc. Laminated ceramic with multilayer electrodes and method of fabrication

Also Published As

Publication number Publication date
DE10085266B4 (en) 2011-08-11
CN1409870A (en) 2003-04-09
AU4516001A (en) 2001-06-18
KR20020059440A (en) 2002-07-12
GB2375889B (en) 2004-03-10
GB0215883D0 (en) 2002-08-14
WO2001043183A2 (en) 2001-06-14
DE10085266T1 (en) 2002-12-12
GB2375889A (en) 2002-11-27
WO2001043183A9 (en) 2002-11-28
JP4768185B2 (en) 2011-09-07
KR100459748B1 (en) 2004-12-03
CN1275309C (en) 2006-09-13
US6603650B1 (en) 2003-08-05
JP2003517730A (en) 2003-05-27

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