WO2001046489A1 - Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes - Google Patents
Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes Download PDFInfo
- Publication number
- WO2001046489A1 WO2001046489A1 PCT/US2000/034800 US0034800W WO0146489A1 WO 2001046489 A1 WO2001046489 A1 WO 2001046489A1 US 0034800 W US0034800 W US 0034800W WO 0146489 A1 WO0146489 A1 WO 0146489A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ion beam
- curvature
- stresses
- supported
- distribution
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0166—Controlling internal stress of deposited layers by ion implantation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU30759/01A AU3075901A (en) | 1999-12-21 | 2000-12-20 | Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes |
US10/175,977 US6929721B2 (en) | 1999-12-21 | 2002-06-20 | Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17140299P | 1999-12-21 | 1999-12-21 | |
US60/171,402 | 1999-12-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/175,977 Continuation US6929721B2 (en) | 1999-12-21 | 2002-06-20 | Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001046489A1 true WO2001046489A1 (en) | 2001-06-28 |
WO2001046489A9 WO2001046489A9 (en) | 2002-05-30 |
Family
ID=22623612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/034800 WO2001046489A1 (en) | 1999-12-21 | 2000-12-20 | Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes |
Country Status (3)
Country | Link |
---|---|
US (1) | US6929721B2 (en) |
AU (1) | AU3075901A (en) |
WO (1) | WO2001046489A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102798491A (en) * | 2011-05-23 | 2012-11-28 | 同济大学 | Thin film residual stress separating and measuring device |
CN111664978A (en) * | 2020-05-28 | 2020-09-15 | 哈尔滨工业大学 | Residual stress characterization method for curved surface special-shaped part |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747845B1 (en) * | 2000-10-11 | 2004-06-08 | International Business Machines Corporation | Modified strain region of strain reactive slider with implanted ions, electrons or neutral atoms |
US7957356B2 (en) | 2002-05-13 | 2011-06-07 | Misomino Chi Acquisitions L.L.C. | Scalable media access control for multi-hop high bandwidth communications |
US7317232B2 (en) * | 2002-10-22 | 2008-01-08 | Cabot Microelectronics Corporation | MEM switching device |
CN102322992B (en) * | 2011-08-15 | 2013-04-17 | 清华大学 | Method for measuring residual stress of microscale matrix film |
CN103592708B (en) * | 2013-10-16 | 2016-04-20 | 清华大学 | The method of grating prepared by surface of test piece |
US10723614B2 (en) | 2017-12-11 | 2020-07-28 | Vanguard International Semiconductor Singapore Pte. Ltd. | Devices with localized strain and stress tuning |
CN110660657A (en) * | 2019-09-30 | 2020-01-07 | 福建北电新材料科技有限公司 | Method for releasing residual stress on surface of substrate slice |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6384114A (en) * | 1986-09-29 | 1988-04-14 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
US4756796A (en) * | 1985-10-23 | 1988-07-12 | Misubishi Kinzoku Kabushiki Kaisha | Method of producing wafer |
JPH03103391A (en) * | 1989-09-18 | 1991-04-30 | Hitachi Cable Ltd | Production of algaas epitaxial wafer |
DE19814760A1 (en) * | 1998-04-02 | 1999-10-07 | Inst Oberflaechenmodifizierung | Ion beam machining process for surface leveling, shaping or shape correction of mechanical, micromechanical, electronic and high quality optical components |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4756696A (en) * | 1985-12-06 | 1988-07-12 | Amp Incorporated | Solder joint inspection feature for surface mount connectors |
US5922212A (en) * | 1995-06-08 | 1999-07-13 | Nippondenso Co., Ltd | Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body |
US6529311B1 (en) * | 1999-10-28 | 2003-03-04 | The Trustees Of Boston University | MEMS-based spatial-light modulator with integrated electronics |
-
2000
- 2000-12-20 WO PCT/US2000/034800 patent/WO2001046489A1/en active Application Filing
- 2000-12-20 AU AU30759/01A patent/AU3075901A/en not_active Abandoned
-
2002
- 2002-06-20 US US10/175,977 patent/US6929721B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4756796A (en) * | 1985-10-23 | 1988-07-12 | Misubishi Kinzoku Kabushiki Kaisha | Method of producing wafer |
JPS6384114A (en) * | 1986-09-29 | 1988-04-14 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
JPH03103391A (en) * | 1989-09-18 | 1991-04-30 | Hitachi Cable Ltd | Production of algaas epitaxial wafer |
DE19814760A1 (en) * | 1998-04-02 | 1999-10-07 | Inst Oberflaechenmodifizierung | Ion beam machining process for surface leveling, shaping or shape correction of mechanical, micromechanical, electronic and high quality optical components |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102798491A (en) * | 2011-05-23 | 2012-11-28 | 同济大学 | Thin film residual stress separating and measuring device |
CN102798491B (en) * | 2011-05-23 | 2014-04-16 | 同济大学 | Thin film residual stress separating and measuring device |
CN111664978A (en) * | 2020-05-28 | 2020-09-15 | 哈尔滨工业大学 | Residual stress characterization method for curved surface special-shaped part |
CN111664978B (en) * | 2020-05-28 | 2021-12-07 | 哈尔滨工业大学 | Residual stress characterization method for spherical special-shaped part |
Also Published As
Publication number | Publication date |
---|---|
US6929721B2 (en) | 2005-08-16 |
WO2001046489A9 (en) | 2002-05-30 |
US20020155635A1 (en) | 2002-10-24 |
AU3075901A (en) | 2001-07-03 |
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