WO2001046716A3 - Electro-optical transceiver system with controlled lateral leakage and method of making it - Google Patents
Electro-optical transceiver system with controlled lateral leakage and method of making it Download PDFInfo
- Publication number
- WO2001046716A3 WO2001046716A3 PCT/US2000/042433 US0042433W WO0146716A3 WO 2001046716 A3 WO2001046716 A3 WO 2001046716A3 US 0042433 W US0042433 W US 0042433W WO 0146716 A3 WO0146716 A3 WO 0146716A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electro
- optical transceiver
- transceiver system
- making
- controlled lateral
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Device Packages (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU45103/01A AU4510301A (en) | 1999-12-02 | 2000-12-01 | Electro-optical transceiver system with controlled lateral leakage and method ofmaking it |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16849199P | 1999-12-02 | 1999-12-02 | |
US60/168,491 | 1999-12-02 | ||
US09/653,378 US6344664B1 (en) | 1999-12-02 | 2000-09-01 | Electro-optical transceiver system with controlled lateral leakage and method of making it |
US09/653,378 | 2000-09-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001046716A2 WO2001046716A2 (en) | 2001-06-28 |
WO2001046716A3 true WO2001046716A3 (en) | 2001-12-13 |
Family
ID=26864172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/042433 WO2001046716A2 (en) | 1999-12-02 | 2000-12-01 | Electro-optical transceiver system with controlled lateral leakage and method of making it |
Country Status (3)
Country | Link |
---|---|
US (5) | US6344664B1 (en) |
AU (1) | AU4510301A (en) |
WO (1) | WO2001046716A2 (en) |
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US20040225326A1 (en) * | 2001-05-07 | 2004-11-11 | Weiner Mike L. | Apparatus for the detection of restenosis |
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US7200024B2 (en) * | 2002-08-02 | 2007-04-03 | Micron Technology, Inc. | System and method for optically interconnecting memory devices |
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US7606499B2 (en) * | 2005-08-01 | 2009-10-20 | Massachusetts Institute Of Technology | Bidirectional transceiver assembly for POF application |
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US5068264A (en) * | 1989-04-27 | 1991-11-26 | Bayer Aktiengesellschaft | Formylpiperazinyl-(meth)acrylic acid derivatives for treatment of collagen |
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
US5621225A (en) * | 1996-01-18 | 1997-04-15 | Motorola | Light emitting diode display package |
US5780875A (en) * | 1995-08-30 | 1998-07-14 | Hitachi, Ltd. | Hybrid optical integration assembly using optical platform |
US5858814A (en) * | 1996-07-17 | 1999-01-12 | Lucent Technologies Inc. | Hybrid chip and method therefor |
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-
2000
- 2000-09-01 US US09/653,378 patent/US6344664B1/en not_active Expired - Lifetime
- 2000-12-01 WO PCT/US2000/042433 patent/WO2001046716A2/en active Application Filing
- 2000-12-01 AU AU45103/01A patent/AU4510301A/en not_active Abandoned
-
2001
- 2001-12-10 US US10/016,382 patent/US6485995B2/en not_active Expired - Lifetime
-
2002
- 2002-09-12 US US10/241,991 patent/US6656757B2/en not_active Expired - Lifetime
-
2003
- 2003-05-13 US US10/437,132 patent/US6686216B2/en not_active Expired - Lifetime
- 2003-05-13 US US10/437,133 patent/US6673642B2/en not_active Expired - Lifetime
Patent Citations (5)
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US5068264A (en) * | 1989-04-27 | 1991-11-26 | Bayer Aktiengesellschaft | Formylpiperazinyl-(meth)acrylic acid derivatives for treatment of collagen |
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
US5780875A (en) * | 1995-08-30 | 1998-07-14 | Hitachi, Ltd. | Hybrid optical integration assembly using optical platform |
US5621225A (en) * | 1996-01-18 | 1997-04-15 | Motorola | Light emitting diode display package |
US5858814A (en) * | 1996-07-17 | 1999-01-12 | Lucent Technologies Inc. | Hybrid chip and method therefor |
Also Published As
Publication number | Publication date |
---|---|
US20030207493A1 (en) | 2003-11-06 |
US6673642B2 (en) | 2004-01-06 |
US20020042187A1 (en) | 2002-04-11 |
US6344664B1 (en) | 2002-02-05 |
WO2001046716A2 (en) | 2001-06-28 |
US20030092208A1 (en) | 2003-05-15 |
US20030215977A1 (en) | 2003-11-20 |
US6686216B2 (en) | 2004-02-03 |
US6656757B2 (en) | 2003-12-02 |
AU4510301A (en) | 2001-07-03 |
US6485995B2 (en) | 2002-11-26 |
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