WO2001054268A2 - Circuit for reducing second and third order intermodulation distortion for a broadband rf amplifier - Google Patents

Circuit for reducing second and third order intermodulation distortion for a broadband rf amplifier Download PDF

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Publication number
WO2001054268A2
WO2001054268A2 PCT/US2001/002155 US0102155W WO0154268A2 WO 2001054268 A2 WO2001054268 A2 WO 2001054268A2 US 0102155 W US0102155 W US 0102155W WO 0154268 A2 WO0154268 A2 WO 0154268A2
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WO
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Prior art keywords
coupled
circuit
signal
diode
diodes
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Application number
PCT/US2001/002155
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French (fr)
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WO2001054268A3 (en
Inventor
Hartmut Ciemniak
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General Instrument Corporation
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Publication date
Priority claimed from US09/489,625 external-priority patent/US6466084B1/en
Application filed by General Instrument Corporation filed Critical General Instrument Corporation
Priority to EP01903229A priority Critical patent/EP1254507B1/en
Priority to DE60101212T priority patent/DE60101212T2/en
Priority to AT01903229T priority patent/ATE254356T1/en
Priority to DK01903229T priority patent/DK1254507T3/en
Priority to AU2001231074A priority patent/AU2001231074A1/en
Publication of WO2001054268A2 publication Critical patent/WO2001054268A2/en
Publication of WO2001054268A3 publication Critical patent/WO2001054268A3/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode

Definitions

  • This invention relates generally to radio frequency (RF) amplification. More particularly, the invention relates to a system for reducing third order intermodulation distortion in broadband CATV RF amplifiers.
  • RF radio frequency
  • Odd-order distortion characteristics of an amplifier are manifest as cross modulation (X-mod) and composite triple beat (CTB) distortions on the signal being amplified. These are two types of intermodulation (IM) distortion.
  • X-mod occurs when the modulated contents of one channel being transmitted interferes with and becomes part of an adjacent or non-adjacent channel.
  • CTB results from the combination of three frequencies of carriers occurring in the proximity of each carrier since the carriers are typically equally spaced across the frequency bandwidth.
  • CTB becomes more problematic when increasing the number of channels on a given CATV system.
  • X- mod distortion also increases in proportion to the number of channels, the possibility of CTB is more dramatic due to the increased number of available combinations from among the total number of transmitted channels. As the number of channels transmitted by a communication system increases, or as the channels reside closer together, the odd-order distortion becomes a limiting factor of amplifier performance.
  • U ⁇ n is the input potential and Uout is the output potential and aont is a factor that determines the magnitude of the term.
  • a,-U ⁇ n is the 1st order term; a j 'U,. 2 is the 2nd order term; a 3 -U m 3 is the 3rd order term ... and U. n " * s me nm or£ *er term.
  • the third order term creates a product at the base frequency, (odd order number 1 )
  • the fifth order term creates a product at the third order and one at the base frequency.
  • Equation 1 creates the following new products: ⁇ , ; ⁇ 2 ;
  • Equation 1 creates the following new products: 2 ⁇ ,; 2 ⁇ 2 ; ⁇ 2 -co,; ⁇ ,+ ⁇ 2 .
  • the first method reduces the signal power level such that the non-linear device is operating in its linear region. In the case of an RF amplifier this results in very high power consumption for low RF output power. Of course, the high power consumption is a disadvantage. However, this method is not an option if high output level is required on a permanent basis.
  • the second method is the feed forward technique. Using this technique, the input signal of the main amplification circuit is sampled and compared to the output signal to determine the difference between the signals. This difference is the distortion component which is amplified by an auxiliary amplification circuit and combined with the output of the main amplification circuit such that the two distortion components cancel each other.
  • the power consumed by the auxiliary amplification circuit is comparable to that consumed by the main amplification circuit and the circuitry is also complex and expensive. At the upper frequency limit it is very difficult to maintain the magnitude and phase conditions with respect to temperature.
  • the third method is the pre- or post-distortion technique. Depending upon whether the compensating distortion signal is generated before the non-linear device or after, the respective term predistortion or postdistortion is used. In this technique, a distortion signal equal in amplitude but opposite in phase to the distortion component generated by the amplifier circuit is estimated and generated. This is used to cancel the distortion at the input
  • the distortion control circuit includes a nonlinear circuit having a pair of diodes which are selectively biased to create second and third order distortion products for adding to the input signal.
  • the present inventive circuit is particularly adaptable weakly nonlinear systems and provides the ability to largely match the dynamically nonlinear behavior of a system to be compensated and achieve compensation over a frequency range of at least 860MHz. Accordingly, it is an object of the present invention to provide a circuit for reducing second and third order intermodulation distortion for electronic devices.
  • Figure 2 is a graph of the diode differential forward resistance R F verses the diode forward current I F .
  • Figure 3 is a graph of the diode differential forward resistance R F verses the diode forward current I F with different resistors in series with the diode.
  • Figure 4 is an alternative embodiment of the present invention.
  • Figure 5 is a bias control for the present invention.
  • Equation 6 Equation 6
  • Equation 4 can be approximated by:
  • Equation 7 I F * I o e kup Equation 7 Which means that the diode forward current I F is proportional to an e-function with the diode forward voltage U F in its exponent. Since the diode is part of the inventive circuit, U F is part of U m and Equation 7 can be rewritten as:
  • Equation 1 Assuming that k-U ⁇ n is x, and inserting it into Equation 6, the third order term x 3 /3 ! and the second order term x 2 /2! will produce the same products, (i.e., compensating products generated by the diode), as shown by Equation 1.
  • the compensating IM products are added at the node connecting the two resistors R 3 and R 4 and the two diodes D, and D 2 such that the compensating IM products are added to the multifrequency operating signal and output at output A.
  • a first control input S is provided to control the operating point of the diodes D nie
  • a direct current (DC) is supplied which flows through diodes D, and D 2 and determines the operating point of the diodes D,, D 2 .
  • a DC current change at the control input S influences the steepness of the diode characteristic.
  • the change in the diode differential forward resistance R F in the lower segment of the diode characteristic is greater than in the upper segment, provided that the change of I F is the same in both cases.
  • the DC current at the first control input S changes the operating point of the diodes D,, D 2 from operating point A to operating point B.
  • a change in the diode forward current I F of 0.5 mA results in a change in the diode differential forward resistance R F of 155 ⁇ .
  • a change in the diode forward current I F of 0.5 mA results in a change in the diode differential forward resistance R F of only 2 ⁇ .
  • the differential diode current ⁇ I F is caused by the input level U ⁇ n . Since U, n is an RF signal, it leads to an alternating diode current, as shown in Equation 8.
  • the magnitude of the compensating IM products is dependent upon the change in diode differential forward resistance R F as a function of the level of U ⁇ n . Accordingly, a low DC current at the first control input S, leads to a greater magnitude of compensating IM products, and a high DC current at the first control input S, correspondingly leads to a smaller magnitude of compensating IM products.
  • the magnitude of the compensating IM may be selectively controlled. As will be described in greater detail hereinafter, separately biasing each diode D réelle D 2 enables the present invention to selectively control the amount of second and third order distortion that is created.
  • an additional method for adjusting the diode differential forward resistance R F characteristic is provided by the introduction of the resistors R, and R 2 , which from an AC standpoint are in series with D, and D 2 .
  • the signal currents are conducted from D 2 via R 2 directly to ground and from O ] via R, and C 6 to ground.
  • C 6 is a blocking capacitor whose complex resistance is negligibly small for all applied frequencies of the multifrequency input signal.
  • the resistors R, and R 2 affect the diode differential forward resistance R F characteristic by flattening the characteristic, thereby influencing the magnitude of the compensating IM products.
  • a graph of the diode differential forward resistance R F verses the diode forward current I F is shown. It can clearly be seen that as the value of the two resistors R,, R 2 is increased from 10 ⁇ to 100 ⁇ , the diode differential forward resistance R F characteristic changes from curve C to curve D.
  • the present invention it is desired to eliminate the generation of second order compensating IM products. This is accomplished by ensuring that the compensating IM products generated by the diodes D,, D 2 are equal.
  • circuit symmetry is required. Therefore, the resistors R shelter R 2 have the same values and simultaneously play the role of symmetry resistors, in that they equalize the potentially different diodes D,, D 2 .
  • the symmetry resistors R, and R 2 decouple the two diodes D,, D 2 from each other and lead to symmetrical compensating IM products. In this manner, any deviations in the characteristics of both diodes D,, D 2 are minimized.
  • the bias on each of the diodes D,, D 2 is different. Accordingly, for every RF positive cycle and negative cycle, the compensating products generated by D, will be different than the compensating products generated by D 2 . In this manner, in addition to providing third order correction, the present circuit will also provide second order correction.
  • capacitors C,, C 2 and C 3 are provided.
  • the common variable capacitor C 3 is used to match the frequency distribution of the IM products of the RF amplifier, thereby achieving optimal broadband compensation.
  • the capacitors C 4 and C 5 serve exclusively for blocking the direct components at the input E and output A, and their capacitances are large enough such that they do not affect the multifrequency operating signal.
  • the capacitors C Pain C 2 and C 3 provide frequency-dependent resistances, such that they permit a desired and controllable level of increase of the compensating IM products at high frequencies.
  • FIG. IB An alternative embodiment 15 of the present invention is shown in Figure IB.
  • This embodiment 15 is similar to the embodiment shown in Figure 1A except that the ground connections have essentially been exchanged with the input and output.
  • Rl 1 is part of the first DC control input S
  • C 7 is a blocking capacitor
  • choke 1 is a path only for the DC current from the control input S, .
  • This embodiment 15 operates in the same manner and achieves the same results as the embodiment 10 shown in Figure 1A.
  • Another alternative embodiment 20 of the present invention is shown in Figure 4.
  • C 3 is replaced by the variable capacitance diode D 3 .
  • An input S 2 is provided for connection to a variable DC voltage. This permits electrical adjustments, for example, when the circuit 20 is integrated into a hybrid RF amplifier.
  • the value of R 5 is chosen to be very high so that there is no adverse influence to the RF transmission behavior of the distortion system, (i.e., no adverse influence on insertion loss and return loss over the range of operating frequencies).
  • the input voltage +U B is the operating voltage which has a fixed value.
  • the fixed value is 24 volts DC, which corresponds to the operating voltage of a hybrid RF amplifier.
  • the value of +U B may be different in other applications.
  • R 12 is a resistor with a positive temperature coefficient to compensate temperature effects. With the insertion of R ]2 it is possible to realize temperature compensation of the RF hybrid, (i.e., increased compensation as the temperature increases). It should be noted that although R 12 improves the temperature behavior, this resistor is optional. Since R ]3 is variable, it permits adjustment of the compensation effect of the IM products.
  • the preferred embodiment of the present invention comprises anti-parallel connected diode branches D,, D 2 whereby the second order products produced in each branch cancel each other out since their individual signals are oppositely phased.
  • an asymmetry maybe intentionally created resulting in second order products which appear at the output A of the circuit.
  • the magnitude of these products depends upon the degree of asymmetry and the DC current in the control input S,; whereas the phase 07180° depends on the weighting of the components from both diode branches D curat D 2 . This assumes that D, causes products at 0° and D 2 causes products at 180° (opposite phase).
  • FIG. 6 an alternative embodiment for also correcting second order distortion is shown.
  • a bias control B makes the bias across the diodes D tract D 2 different with respect to each other such that diode D, produces a different amount of compensating products than diode D 2 .
  • three additional inputs S 2 , S 3 and S 4 are provided from the bias control B to control the amount of DC current supplied to the diodes D, and D 2 . Controlling the amount of DC current across each of diodes D, and D 2 causes diodes D, and D 2 to exhibit different operating points, thereby generating second order IM compensating products that sum together.
  • the three additional inputs S 2 , S 3 , S 4 are DC current sources, each of which may be selectively controlled and adjusted in order to control the amount of DC current supplied to the diodes D curat D 2 .
  • DC current sources each of which may be selectively controlled and adjusted in order to control the amount of DC current supplied to the diodes D curat D 2 .
  • the bias control B is configured such that the sum of the third order products remains substantially constant and that the third order products are further affected only by the control input S 1.
  • the bias control B only effects the generation of second order products.
  • the present invention achieves the most independent possible relative adjustment of second and third order products and thereby provides practicable equalization.
  • several embodiments of DC current inputs S 2 are DC current sources, each of which may be selectively controlled and adjusted in order to control the amount of DC current supplied to the diodes D curat D 2 .
  • Figure 7A is a DC current input control circuit for input S 3 comprising three resistors
  • Figure 7B is a DC current input control circuit for inputs S 2 , S 3 and S 4 comprising resistors R 3] , R 33 and R 34 and potentiometer R 32 .
  • Adjustment of the potentiometer controls the amount of DC current from the inputs S 2 , S 3 ,
  • Figure 7C shows a circuit for inputs S 2 and S 4 comprising two capacitors C 4] and C 42 , two resistors R 41 and R 43 and a potentiometer R 42 .
  • this circuit by setting the potentiometer R 42 slide to ground, (away from its mid-point setting), an intentional and controlled asymmetry is achieved between the two diodes D,, D 2 .
  • the resulting resistance components of Figure 7C are parallel to R, and R 2 from an RF standpoint.
  • the function of R ⁇ and R 2 has previously been described hereinbefore.
  • Upon deviation from the mid-point setting of the potentiometer R 42 there are created different diode differential forward resistances R F and their accompanying different diode characteristics.
  • component R may be changed such that it is different than R 2
  • capacitor C may be changed such that it is different than capacitor C 2 .
  • This may also be accomplished by connecting additional complex resistances or reactions in parallel with resistance R, or resistance R 2 .
  • Table 2 below sets forth the component values for the components shown in Figures 7A-7C . It should be clearly recognized by those skilled in the art that these component values have been selected for the particular application and desired frequency range. These component values are illustrative only and should not be considered to be an essential part of the present invention since they will change depending upon the operating range of the system in which the distortion circuit is utilized and the amplifier to which the distortion circuit is coupled. The values should not be viewed as limiting.

Abstract

A distortion control circuit for selective modulation of an RF signal including an input port for coupling with an RF signal source, such as a multifrequency CATV signal, and an output port for coupling to an associated electronic device. The distortion control circuit generates new second and third order products from the multifrequency RF signal which are the same magnitude, but opposite in phase to the nonlinear products generated by the electronic device. Since both the original multifrequency RF input signal and the new generated products from the distortion control circuit are coupled to the electronic device, the nonlinear products from the distortion control circuit and the electronic device will be cancelled and the output of the electronic device will comprise only the multifrequency RF signal. The distortion control circuit includes a nonlinear circuit having a pair of diodes which are selectively biased to create second and third order distortion products for adding to the input signal.

Description

CIRCUIT FOR REDUCING SECOND
AND THIRD ORDER INTERMODULATION
DISTORTION FOR A BROADBAND RF AMPLIFIER
BACKGROUND This invention relates generally to radio frequency (RF) amplification. More particularly, the invention relates to a system for reducing third order intermodulation distortion in broadband CATV RF amplifiers.
Lowering distortion in RF power amplifier circuits without compromising their transient response is an omnipresent problem. High frequency amplification is widely used in communications and broadcasting and also where high-speed switching is required for use in digital instrumentation. However, high frequency amplifier applications extend linear operation into areas where parasitic effects of interelectrode capacitance, wire inductance, stored charge and even operating frequency wavelength begin to adversely affect and dominate circuit behavior. Minimizing distortion is particularly important when a series of amplifiers is cascaded over a signal transmission path, such as a series of RF amplifiers in a CATV transmission network. Disposed throughout a CATV transmission system are RF amplifiers that periodically amplify the transmitted signals to counteract cable attenuation and attenuation caused by passive CATV components, such as signal splitters and equalizers. The RF amplifiers are also employed to maintain the desired carrier-to-noise ratio. Due to the number of RF amplifiers employed in a given CATV transmission system, each RF amplifier must provide minimum degradation to the transmitted signal.
In an ideal communication system it is preferable that the components which comprise the system are linear. However, as a practical reality, there are many nonlinearities that are typically introduced by the electronic components, such as RF amplifiers. The distortions created by an RF amplifier which are of primary concern are second (even) and third (odd) order harmonic distortions. Prior art amplifier designs have attempted to ameliorate the effects of even order distortions by employing push-pull amplifier topologies, since the maximum even order cancellation occurs when the proper 180° phase relationship is maintained over the entire bandwidth. Although this is often achieved through equal gain in both push-pull halves by matching the operating characteristics of the active devices, it is still desirable to have a circuit which is able to generate second order distortions in order to compensate for second order distortions which originate from within or outside of the amplifier. An amplifier having second order distortion correction capabilities would be suitable for use in many applications, such as with lasers or nonlinear quadripoles.
Odd-order distortion characteristics of an amplifier are manifest as cross modulation (X-mod) and composite triple beat (CTB) distortions on the signal being amplified. These are two types of intermodulation (IM) distortion. X-mod occurs when the modulated contents of one channel being transmitted interferes with and becomes part of an adjacent or non-adjacent channel. CTB results from the combination of three frequencies of carriers occurring in the proximity of each carrier since the carriers are typically equally spaced across the frequency bandwidth. Of the two noted distortions, CTB becomes more problematic when increasing the number of channels on a given CATV system. While X- mod distortion also increases in proportion to the number of channels, the possibility of CTB is more dramatic due to the increased number of available combinations from among the total number of transmitted channels. As the number of channels transmitted by a communication system increases, or as the channels reside closer together, the odd-order distortion becomes a limiting factor of amplifier performance.
The nonlinear properties of an RF amplifier can be described by a curve which can be expanded into a Taylor series as follows:
Uout = a,-Uιn + a2-Uιn 2 + a3-Um 3 + a4-Uln 4 + a5-Um 5 ... U. Equation 1
where Uιn is the input potential and Uout is the output potential and a„ is a factor that determines the magnitude of the term. It should be noted that a,-Uιn is the 1st order term; aj'U,.2 is the 2nd order term; a3-Um 3 is the 3rd order term ... and U.n" *s me nm or£*er term.
The magnitudes of the individual terms are strongly dependent on the input signal and, therefore, on the level control of the amplifier.
If we have the following: Uιn = A-cos ω,t Equation 2
There exists for each term multiple combination possibilities of the input circulating frequencies ω, due to the power of the corresponding order number. Additionally, in multifrequency transmission systems, such as a CATV transmission network, the number of new circulating frequencies at the output of the network increases exponentially with the number (i) of frequencies at the input. These new circulating frequencies, both second and third order products, are referred to herein as intermodulation (IM) products and are detrimental to the accurate acquisition of CATV signals.
Using the Taylor series, it can be demonstrated that all odd order terms create products which appear at the same location as the lower- valued odd order terms. Therefore, the third order term creates a product at the base frequency, (odd order number 1 ), the fifth order term creates a product at the third order and one at the base frequency. If the input signal consists, for example, of the base circulating frequencies ω, and ω2 (i=2) with the same amplitude A, that is expressed with:
Uιn = Acos^ j÷ Acos(ø2t)
= 0.5A(e« + e-« ++ e-<n EqaM'"13
then the third order term a3-Um 3 of Equation 1 creates the following new products: ±ω, ; ±ω2;
±3ω,; ±3ω2; ±(2ω2 ±ω,); ±(2ω, ±ω2). In this case there are 16 new circulating output frequencies due to two input circulating frequencies. The second order term a U,,,2 of Equation 1 creates the following new products: 2ω,; 2ω2; ω2-co,; ω,+ω2.
A "weakly" nonlinear transmission system can be defined such that: a) the effect of odd order terms on other lower- valued odd order terms is negligibly small; and b) higher- valued terms after the third order term are negligibly small. Accordingly, a weakly nonlinear system may be mathematically described such that the Taylor series is broken off after the third order term, (a3-Uιn 3). Weakly nonlinear systems are characterized in that a 1 db increase in the level of the input circulating frequencies ω, causes an increase of 3 db in the third order IM products.
Communication systems, such as CATV systems which include broadband RF amplifiers, are further regarded as dynamically nonlinear systems whereby the amplitudes and phases of the IM products are dependent upon the input frequencies.
There are three basic ways of correcting distortion created by a non-linear device: 1) reduce the signal power level; 2) use a feed forward technique; and 3) use a predistortion or postdistortion technique. The first method reduces the signal power level such that the non-linear device is operating in its linear region. In the case of an RF amplifier this results in very high power consumption for low RF output power. Of course, the high power consumption is a disadvantage. However, this method is not an option if high output level is required on a permanent basis.
The second method is the feed forward technique. Using this technique, the input signal of the main amplification circuit is sampled and compared to the output signal to determine the difference between the signals. This difference is the distortion component which is amplified by an auxiliary amplification circuit and combined with the output of the main amplification circuit such that the two distortion components cancel each other.
However, the power consumed by the auxiliary amplification circuit is comparable to that consumed by the main amplification circuit and the circuitry is also complex and expensive. At the upper frequency limit it is very difficult to maintain the magnitude and phase conditions with respect to temperature.
The third method is the pre- or post-distortion technique. Depending upon whether the compensating distortion signal is generated before the non-linear device or after, the respective term predistortion or postdistortion is used. In this technique, a distortion signal equal in amplitude but opposite in phase to the distortion component generated by the amplifier circuit is estimated and generated. This is used to cancel the distortion at the input
(for predistortion) or output (for postdistortion) of the amplifier, thereby improving the operating characteristics of the amplifier.
SUMMARY The present invention is a distortion control circuit for selective modulation of an RF signal. The present invention includes an input port for coupling with an RF signal source, such as a multifrequency CATV signal, and an output port for coupling to an associated electrical circuit such as a hybrid RF amplifier, a laser or any other nonlinear quadrapole. The present invention generates new second and third order products from the multifrequency RF signal which are the same magnitude, but opposite in phase to the nonlinear products generated by the hybrid RF amplifier, laser or nonlinear quadrapole, (hereinafter "electronic device"). Since both the original multifrequency RF input signal and the new generated products from the invention are coupled to the electronic device, the nonlinear products from the present invention and the electronic device will be canceled and the output of the electronic device will comprise only the multifrequency RF signal. The distortion control circuit includes a nonlinear circuit having a pair of diodes which are selectively biased to create second and third order distortion products for adding to the input signal. The present inventive circuit is particularly adaptable weakly nonlinear systems and provides the ability to largely match the dynamically nonlinear behavior of a system to be compensated and achieve compensation over a frequency range of at least 860MHz. Accordingly, it is an object of the present invention to provide a circuit for reducing second and third order intermodulation distortion for electronic devices.
Other objects and advantages of the system and the method will become apparent to those skilled in the art after reading a detailed description of the preferred embodiment.
BRIEF DESCRIPTION OF THE DRAWTNG(S) Figures 1A and IB are schematic diagrams of circuits for reducing third order distortion in accordance with the present invention.
Figure 2 is a graph of the diode differential forward resistance RF verses the diode forward current IF.
Figure 3 is a graph of the diode differential forward resistance RF verses the diode forward current IF with different resistors in series with the diode.
Figure 4 is an alternative embodiment of the present invention. Figure 5 is a bias control for the present invention.
Figure 6 is a schematic diagram of a circuit for reducing second and third order distortion in accordance with the present invention. Figures 7A-7C are schematic diagrams of bias control circuits for the distortion circuit of Figure 6.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) The preferred embodiment of the present invention will be described with reference to the drawing figures where like numerals represent like elements throughout. One basic structural element for a compensator is a nonlinear element. In accordance with the present invention, the nonlinear element is preferably a Schottky diode pair. Diode current IF and diode voltage UF are generally related by the following equation:
IF = I0(eUF/m Uτ - l ); Equation 4 where: IF is the diode forward current; I0 is the diode inverse current; UF is the diode forward voltage; m is a correction factor with a value between 1 and 2; and Uτ is the temperature dependent voltage which can be written as: k - T Uτ = ; Equation 5
whereby: k = Boltzmann's - constant (physical constant);
T= temperature in kelvin; and e0 = electrical element charge (physical constant). Accordingly, Uτ is a constant for a certain temperature, (for example, 25mV at 23 °C). The Taylor series of an exponential function yields relatively large second and third order terms. This is expressed in Equation 6 whereby the last term is the third order term and the next-to- last term is the second order term. x x ex ≡ l + + Equation 6
(1 !) (2!) (3!)
Equation 4 can be approximated by:
IF * Ioekup Equation 7 Which means that the diode forward current IF is proportional to an e-function with the diode forward voltage UF in its exponent. Since the diode is part of the inventive circuit, UF is part of Um and Equation 7 can be rewritten as:
IF * Ioek Um Equation 8
Assuming that k-Uιn is x, and inserting it into Equation 6, the third order term x3/3 ! and the second order term x2/2! will produce the same products, (i.e., compensating products generated by the diode), as shown by Equation 1.
To achieve phase opposition of the compensating IM products relative to those of the object to be compensated, the nonlinear element is connected in accordance with the preferred embodiment of the present invention in the transverse branch of a T-member as shown in Figure 1 A. If the nonlinear element was arranged in the length branch of an equivalent T-member, the IM products would be in phase relative to those to be compensated, (provided the diodes in the two cases operate at the same operating points), and compensation would be impossible.
The system 10 for reducing second and third order IM products in accordance with the present invention is located between an input E and an output A. The input E comprises a multifrequency operating signal, for example a CATV signal having plurality of CATV channels. The output A is connected to a system to be compensated, for example a hybrid RF amplifier, a laser or any other nonlinear quadrapole. For simplicity, however, the system will be explained hereinafter with reference to the example of being connected to an RF amplifier. As is well known by those skilled in the art, the RF amplifier not only amplifies the output A, but also may introduce undesired second and third order IM products. These
IM products are compensated for by the present invention. As shown, the system 10 is a circuit which comprises a plurality of resistors R„ R2, R3, R4; a plurality of capacitors C„ C2, C3, C4, C5, C6; and a nonlinear element comprising two Schottky barrier diodes D,, D2. As will be explained in detail hereinafter, the present invention produces second and third order "compensating" IM products, (including cross-modulation products), which exhibit the same amplitude but opposite phase to the undesired RF amplifier-generated IM products. The compensating IM products are added at the node connecting the two resistors R3 and R4 and the two diodes D, and D2 such that the compensating IM products are added to the multifrequency operating signal and output at output A. A first control input S, is provided to control the operating point of the diodes D„
D2 and thereby control the magnitude of compensating IM products. At the first control input S,, a direct current (DC) is supplied which flows through diodes D, and D2 and determines the operating point of the diodes D,, D2. A DC current change at the control input S, influences the steepness of the diode characteristic. The change in the diode differential forward resistance RF in the lower segment of the diode characteristic is greater than in the upper segment, provided that the change of IF is the same in both cases.
A graph of the diode differential forward resistance RF verses the diode forward current IF is shown in Figure 2. It should be noted that this curve is an illustration of the frequency response at 10 KHz. As shown, the diode differential forward resistance RF is dependent upon both the diode operating point and the change in diode forward current IF.
For example, the DC current at the first control input S, changes the operating point of the diodes D,, D2 from operating point A to operating point B. At operating point A, a change in the diode forward current IF of 0.5 mA results in a change in the diode differential forward resistance RF of 155 Ω. However, at operating point B, a change in the diode forward current IF of 0.5 mA results in a change in the diode differential forward resistance RF of only 2 Ω. The differential diode current Δ IF is caused by the input level Uιn. Since U,n is an RF signal, it leads to an alternating diode current, as shown in Equation 8.
The magnitude of the compensating IM products is dependent upon the change in diode differential forward resistance RF as a function of the level of Uιn. Accordingly, a low DC current at the first control input S, leads to a greater magnitude of compensating IM products, and a high DC current at the first control input S, correspondingly leads to a smaller magnitude of compensating IM products. By selectively controlling the DC current at the first control input S,, the magnitude of the compensating IM may be selectively controlled. As will be described in greater detail hereinafter, separately biasing each diode D„ D2 enables the present invention to selectively control the amount of second and third order distortion that is created. In accordance with the present invention, an additional method for adjusting the diode differential forward resistance RF characteristic is provided by the introduction of the resistors R, and R2, which from an AC standpoint are in series with D, and D2. The signal currents are conducted from D2 via R2 directly to ground and from O] via R, and C6 to ground. C6 is a blocking capacitor whose complex resistance is negligibly small for all applied frequencies of the multifrequency input signal. The resistors R, and R2 affect the diode differential forward resistance RF characteristic by flattening the characteristic, thereby influencing the magnitude of the compensating IM products. Referring to Figure 3, a graph of the diode differential forward resistance RF verses the diode forward current IF is shown. It can clearly be seen that as the value of the two resistors R,, R2 is increased from 10 Ω to 100 Ω, the diode differential forward resistance RF characteristic changes from curve C to curve D.
In one embodiment of the present invention it is desired to eliminate the generation of second order compensating IM products. This is accomplished by ensuring that the compensating IM products generated by the diodes D,, D2 are equal. In this embodiment, circuit symmetry is required. Therefore, the resistors R„ R2 have the same values and simultaneously play the role of symmetry resistors, in that they equalize the potentially different diodes D,, D2. The symmetry resistors R, and R2 decouple the two diodes D,, D2 from each other and lead to symmetrical compensating IM products. In this manner, any deviations in the characteristics of both diodes D,, D2 are minimized.
In an alternative embodiment where it is desired to generate second order compensating IM products, the bias on each of the diodes D,, D2 is different. Accordingly, for every RF positive cycle and negative cycle, the compensating products generated by D, will be different than the compensating products generated by D2. In this manner, in addition to providing third order correction, the present circuit will also provide second order correction.
The diode differential forward resistance RF is frequency dependent due to the complex parasitic effects of the diodes D,, D2. As the diode current IF decreases, the influence of the parasitic elements increases. The detrimental diffusion capacitance of the diodes D,, D2, (which parallels the diode differential forward resistance RF), prevents the signal energy at the upper frequency limit from entering into the diode differential forward resistance RF. This leads to a reduction of the compensating IM products at high frequencies. Unfortunately, a high level of compensating IM products is particularly required at high frequencies because the IM products in RF amplifiers inherently increase with signal frequency due to the circuit-produced reverse coupling, which becomes less effective at high frequencies.
In order to counteract the parasitic effects, capacitors C,, C2 and C3 are provided. The common variable capacitor C3 is used to match the frequency distribution of the IM products of the RF amplifier, thereby achieving optimal broadband compensation. By providing the equalizing element C3, the required symmetry conditions can always be obtained independently of its adjustment. The capacitors C4 and C5 serve exclusively for blocking the direct components at the input E and output A, and their capacitances are large enough such that they do not affect the multifrequency operating signal. Together with R, and R2, the capacitors C„ C2 and C3 provide frequency-dependent resistances, such that they permit a desired and controllable level of increase of the compensating IM products at high frequencies. The flattening of the diode characteristic at high frequencies is counteracted by the reduction of the complex series resistances. As a result, the diode characteristic steepens not only at high frequencies, but an increase in steepness can also be realized if desired. In accordance with the teachings of the present invention, an improvement of 8 db to 15 db in CTB and X-mod may be expected depending upon the hybrid RF amplifier to which the system 10 is coupled.
An alternative embodiment 15 of the present invention is shown in Figure IB. This embodiment 15 is similar to the embodiment shown in Figure 1A except that the ground connections have essentially been exchanged with the input and output. In this embodiment, Rl 1 is part of the first DC control input S„ C7 is a blocking capacitor, and choke 1 is a path only for the DC current from the control input S, . This embodiment 15 operates in the same manner and achieves the same results as the embodiment 10 shown in Figure 1A. Another alternative embodiment 20 of the present invention is shown in Figure 4.
In this alternative embodiment 20, C3 is replaced by the variable capacitance diode D3 . An input S2 is provided for connection to a variable DC voltage. This permits electrical adjustments, for example, when the circuit 20 is integrated into a hybrid RF amplifier. The value of R5 is chosen to be very high so that there is no adverse influence to the RF transmission behavior of the distortion system, (i.e., no adverse influence on insertion loss and return loss over the range of operating frequencies).
Referring to Figure 5, a bias control 30 for the input S, of Figures 1A, IB and 4 is shown. The input voltage +UB is the operating voltage which has a fixed value. In the present case, the fixed value is 24 volts DC, which corresponds to the operating voltage of a hybrid RF amplifier. As those skilled in the art would appreciate, the value of +UB may be different in other applications. R12 is a resistor with a positive temperature coefficient to compensate temperature effects. With the insertion of R]2 it is possible to realize temperature compensation of the RF hybrid, (i.e., increased compensation as the temperature increases). It should be noted that although R12 improves the temperature behavior, this resistor is optional. Since R]3 is variable, it permits adjustment of the compensation effect of the IM products.
Table 1 below sets forth the component values for the components shown in Figures 1, 4, 5 and 6. It should be clearly recognized by those skilled in the art that these component values have been selected for the particular application and desired frequency range. These component values are illustrative only and should not be considered to be an essential part of the present invention since they will change depending upon the operating range of the system in which the distortion circuit is utilized and the amplifier to which the distortion circuit is coupled. The values should not be viewed as limiting.
Table 1
Figure imgf000013_0001
The preferred embodiment of the present invention comprises anti-parallel connected diode branches D,, D2 whereby the second order products produced in each branch cancel each other out since their individual signals are oppositely phased. However, an asymmetry maybe intentionally created resulting in second order products which appear at the output A of the circuit. The magnitude of these products depends upon the degree of asymmetry and the DC current in the control input S,; whereas the phase 07180° depends on the weighting of the components from both diode branches D„ D2. This assumes that D, causes products at 0° and D2 causes products at 180° (opposite phase). Referring to Figure 6, an alternative embodiment for also correcting second order distortion is shown. It should be recognized that in this embodiment, a bias control B makes the bias across the diodes D„ D2 different with respect to each other such that diode D, produces a different amount of compensating products than diode D2. In this embodiment, three additional inputs S2, S3 and S4 are provided from the bias control B to control the amount of DC current supplied to the diodes D, and D2. Controlling the amount of DC current across each of diodes D, and D2 causes diodes D, and D2 to exhibit different operating points, thereby generating second order IM compensating products that sum together. The three additional inputs S2, S3, S4 are DC current sources, each of which may be selectively controlled and adjusted in order to control the amount of DC current supplied to the diodes D„ D2. Those of skill in the art should recognize that there are a number of different circuits, from very simple to extremely complex, that may be utilized to provide the DC current inputs S2, S3, S4. It is the use of the selectively controlled input S2, S3 and S4 to control the amount of DC current supply to the diodes D,, D2 which is not known in the art. The bias control B is configured such that the sum of the third order products remains substantially constant and that the third order products are further affected only by the control input S 1. In accordance with the present invention, the bias control B only effects the generation of second order products. Thus, the present invention achieves the most independent possible relative adjustment of second and third order products and thereby provides practicable equalization. However, several embodiments of DC current inputs S2,
53, S4 for use as a bias control circuit B to selectively control the output of DC current are shown in Figures 7A-7C.
Figure 7A is a DC current input control circuit for input S3 comprising three resistors
R2I, R23, R24 and a potentiometer R22. Similarly, Figure 7B is a DC current input control circuit for inputs S2, S3 and S4 comprising resistors R3], R33 and R34 and potentiometer R32.
Adjustment of the potentiometer controls the amount of DC current from the inputs S2, S3,
54. As shown in Figures 7A and 7B, resistor R24 can be replaced by choke2 and resistor R34 can be replaced by choke3 to provide a pure DC path.
Figure 7C shows a circuit for inputs S2 and S4 comprising two capacitors C4] and C42, two resistors R41 and R43 and a potentiometer R42. In this circuit, by setting the potentiometer R42 slide to ground, (away from its mid-point setting), an intentional and controlled asymmetry is achieved between the two diodes D,, D2. The resulting resistance components of Figure 7C are parallel to R, and R2 from an RF standpoint. The function of Rλ and R2 has previously been described hereinbefore. Upon deviation from the mid-point setting of the potentiometer R42, there are created different diode differential forward resistances RF and their accompanying different diode characteristics. As a result, second order products are produced and output at output A whereas in contrast the prevailing diode asymmetry has practically no influence on the sum of the third order products of the two individual diodes because they are in the same phase. If the third order products generated by diode D, decrease, then the third order products generated by diode D2 increase by the same amount, so that the sum at the connection point of the two diodes D,, D2 remains constant The capacitance values of C4I and C42 are selected to be sufficiently great such that they function only to block the DC components.
Alternatively, the value of component R, may be changed such that it is different than R2, or capacitor C( may be changed such that it is different than capacitor C2. This may also be accomplished by connecting additional complex resistances or reactions in parallel with resistance R, or resistance R2. Finally connection of additional different complex resistances or reactances from input point C to ground or input point D to ground. Any of the above-mentioned methods, or a combination thereof may be used to effect the generation of second-order compensating IM products.
Table 2 below sets forth the component values for the components shown in Figures 7A-7C . It should be clearly recognized by those skilled in the art that these component values have been selected for the particular application and desired frequency range. These component values are illustrative only and should not be considered to be an essential part of the present invention since they will change depending upon the operating range of the system in which the distortion circuit is utilized and the amplifier to which the distortion circuit is coupled. The values should not be viewed as limiting.
Table 2
Figure imgf000015_0001
Figure imgf000016_0001
It should be noted that all of the circuits described herein and shown in the figures are for a positive supply voltage, and that all circuits can also be configured for negative or symmetrical positive-negative-supply voltages. Although these circuits would have a different layout, they would function in the same manner and achieve the same results as the circuits described herein.

Claims

CLAIMS What is claimed is:
1. A distortion control circuit for selective modulation of a signal comprising: a signal input port; a non-linear circuit coupled to said input port for selectively modulating a signal received at said input port; said non-linear circuit comprising: a pair of diodes coupled together in series; first and second capacitors coupled together in series, and coupled in parallel to said diode pair; a third capacitor, having a first end coupled between said first and second coupled capacitors and a second end coupled to ground; a first resistor coupled at one end to a first end of said diode pair and at a second end to a fourth capacitor, said fourth capacitor being further coupled to ground; and a second resistor coupled at one end to a second end of said diode pair and at a second end to ground; and an output port for outputting said selectively modulated signal from said non-linear circuit.
2. The circuit of claim 1, further including a first control signal input port between said first resistor and said fourth capacitor.
3. The circuit of claim 1, wherein said third capacitor is a variable capacitor.
4. The circuit of claim 1 , further including athird resistor, coupled between said diodes and a fifth capacitor; said fifth capacitor being further coupled to said output port.
5. The circuit of claim 4, further including a fourth resistor, coupled between said diodes and a fifth capacitor, said fifth capacitor being further coupled to said input port.
6. The distortion control circuit of claim 1 further including a low resistance DC bias voltage circuit.
7. The distortion control circuit of claim 6 further including a temperature compensation circuit coupled with said bias circuit, for selectively adjusting said DC bias voltage in response to a change in ambient temperature.
8. The distortion control circuit of claim 7, whereby said bias circuit comprises at least one resistor having a positive temperature coefficient.
9. The distortion control circuit of claim 1 whereby said non-linear circuit provides selective attenuation of the signal based upon the signal magnitude; whereby more attenuation is provided for larger signal magnitudes and less attenuation is provided for smaller signal magnitudes.
10. The distortion control circuit of claim 1, wherein said third capacitor is a variable capacitance diode.
11. The distortion control circuit of claim 10 further including a second control signal input port between said first and second coupled capacitors and said third capacitor.
12. The distortion control circuit of claim 11 whereby said second control signal input port further includes a fifth resistor.
13. A distortion control circuit for selective modulation of a signal comprising: a signal input port; a non-linear circuit coupled to said input port for selectively modulating a signal received at said input port; said non-linear circuit comprising: a pair of diodes, comprising first and second diodes coupled together in series; first and second capacitors coupled together in series, and coupled in parallel to said diode pair; a bias control having at least one output, for selectively controlling the amount of DC current through said diode pair; and a signal output port for outputting said selectively modulated signal from said nonlinear circuit.
14. The circuit of claim 13, whereby said bias control selectively controls the amount of DC current flowing through said first diode separately from the amount of DC current flowing through said second diode.
15. The circuit of claim 13 whereby said bias control includes three outputs, the first output coupled to a first end of said diode pair, the second output coupled between said first and second diodes and the third output coupled to a second end of said diode pair.
16. A distortion control circuit for selective modulation of a signal comprising: a signal input port; a non-linear circuit coupled to said input port for selectively modulating a signal received at said input port; said non-linear circuit comprising: first and second diodes coupled together in series; first and second capacitors coupled together in series, and coupled in parallel to said first and second diodes; means for adjusting the voltage bias separately across each of said diodes; and an output port for outputting said selectively modulated signal from said non-linear circuit.
17. The circuit of claim 16, whereby said adjusting means comprises three control signal outputs; the first control signal output coupled to a first end of said first diode, the second output coupled at a second end of said first diode and a first end of said second diode and the third output coupled to a second end of said second diode.
18. A method for selective attenuation of a signal comprising: receiving an input signal; selectively attenuating said input signal to create second order distortions, using a circuit comprising a pair of diodes coupled together in series and coupled in parallel to a pair of capacitors, whereby said selective attenuation includes providing a different amount of
DC current across each of said diodes; and outputting said selectively attenuated signal.
PCT/US2001/002155 2000-01-24 2001-01-23 Circuit for reducing second and third order intermodulation distortion for a broadband rf amplifier WO2001054268A2 (en)

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EP01903229A EP1254507B1 (en) 2000-01-24 2001-01-23 Circuit for reducing second and third order intermodulation distortion for a broadband rf amplifier
DE60101212T DE60101212T2 (en) 2000-01-24 2001-01-23 CIRCUIT TO REDUCE INTERMODULATION DISTORTION OF SECOND AND THIRD ORDERS OF A BROADBAND HIGH FREQUENCY AMPLIFIER
AT01903229T ATE254356T1 (en) 2000-01-24 2001-01-23 CIRCUIT FOR REDUCING SECOND AND THIRD ORDER INTERMODULATION DISTORTION OF A BROADBAND HIGH FREQUENCY AMPLIFIER
DK01903229T DK1254507T3 (en) 2000-01-24 2001-01-23 Circuits for Reducing Second and Third-Order Intermodulation Distortions to a Broadband RF Amplifier
AU2001231074A AU2001231074A1 (en) 2000-01-24 2001-01-23 Circuit for reducing second and third order intermodulation distortion for a broadband rf amplifier

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