WO2001071796A2 - Method for electrochemical polishing of a conductive material - Google Patents
Method for electrochemical polishing of a conductive material Download PDFInfo
- Publication number
- WO2001071796A2 WO2001071796A2 PCT/US2001/040358 US0140358W WO0171796A2 WO 2001071796 A2 WO2001071796 A2 WO 2001071796A2 US 0140358 W US0140358 W US 0140358W WO 0171796 A2 WO0171796 A2 WO 0171796A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive material
- polishing pad
- polishing
- wafer
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001569877A JP3823056B2 (en) | 2000-03-23 | 2001-03-22 | Semiconductor processing method for removing conductive material |
DE10195941T DE10195941B4 (en) | 2000-03-23 | 2001-03-22 | Semiconductor processing method for removing conductive material |
AU2001251734A AU2001251734A1 (en) | 2000-03-23 | 2001-03-22 | Semiconductor processing methods of removing conductive material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/534,820 | 2000-03-23 | ||
US09/534,820 US6582281B2 (en) | 2000-03-23 | 2000-03-23 | Semiconductor processing methods of removing conductive material |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001071796A2 true WO2001071796A2 (en) | 2001-09-27 |
WO2001071796A3 WO2001071796A3 (en) | 2002-03-14 |
Family
ID=24131656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/040358 WO2001071796A2 (en) | 2000-03-23 | 2001-03-22 | Method for electrochemical polishing of a conductive material |
Country Status (6)
Country | Link |
---|---|
US (4) | US6582281B2 (en) |
JP (1) | JP3823056B2 (en) |
KR (1) | KR100562440B1 (en) |
AU (1) | AU2001251734A1 (en) |
DE (1) | DE10195941B4 (en) |
WO (1) | WO2001071796A2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6582281B2 (en) | 2000-03-23 | 2003-06-24 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
US7125734B2 (en) | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
US7456035B2 (en) | 2003-07-29 | 2008-11-25 | Lumination Llc | Flip chip light emitting diode devices having thinned or removed substrates |
US7842547B2 (en) | 2003-12-24 | 2010-11-30 | Lumination Llc | Laser lift-off of sapphire from a nitride flip-chip |
CN104416453A (en) * | 2013-08-30 | 2015-03-18 | 罗门哈斯电子材料Cmp控股股份有限公司 | Method of chemical mechanical polishing a substrate |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7168084B1 (en) | 1992-12-09 | 2007-01-23 | Sedna Patent Services, Llc | Method and apparatus for targeting virtual objects |
US7686935B2 (en) * | 1998-10-26 | 2010-03-30 | Novellus Systems, Inc. | Pad-assisted electropolishing |
US7427337B2 (en) * | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
US7578923B2 (en) * | 1998-12-01 | 2009-08-25 | Novellus Systems, Inc. | Electropolishing system and process |
US6991526B2 (en) * | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
US6848970B2 (en) * | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
US6722950B1 (en) * | 2000-11-07 | 2004-04-20 | Planar Labs Corporation | Method and apparatus for electrodialytic chemical mechanical polishing and deposition |
JP2002254248A (en) * | 2001-02-28 | 2002-09-10 | Sony Corp | Electrochemical machining device |
US6776693B2 (en) * | 2001-12-19 | 2004-08-17 | Applied Materials Inc. | Method and apparatus for face-up substrate polishing |
US20040072445A1 (en) * | 2002-07-11 | 2004-04-15 | Applied Materials, Inc. | Effective method to improve surface finish in electrochemically assisted CMP |
US7112270B2 (en) * | 2002-09-16 | 2006-09-26 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
US6769961B1 (en) * | 2003-01-15 | 2004-08-03 | Lam Research Corporation | Chemical mechanical planarization (CMP) apparatus |
US6893328B2 (en) * | 2003-04-23 | 2005-05-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Conductive polishing pad with anode and cathode |
US20050087450A1 (en) * | 2003-10-24 | 2005-04-28 | Reder Steven E. | Electropolishing pad |
US20050121141A1 (en) * | 2003-11-13 | 2005-06-09 | Manens Antoine P. | Real time process control for a polishing process |
US7655565B2 (en) * | 2005-01-26 | 2010-02-02 | Applied Materials, Inc. | Electroprocessing profile control |
US20070158201A1 (en) * | 2006-01-06 | 2007-07-12 | Applied Materials, Inc. | Electrochemical processing with dynamic process control |
US7585782B2 (en) * | 2006-04-11 | 2009-09-08 | Micron Technology, Inc. | Methods of forming semiconductor constructions, and methods of selectively removing metal-containing materials relative to oxide |
US7422982B2 (en) * | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
JP5148079B2 (en) * | 2006-07-25 | 2013-02-20 | 富士通株式会社 | Heat exchanger for liquid cooling unit, liquid cooling unit and electronic equipment |
JP2009094205A (en) * | 2007-10-05 | 2009-04-30 | Renesas Technology Corp | Polishing pad and polishing device for device wafer |
US9227294B2 (en) * | 2013-12-31 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for chemical mechanical polishing |
CN104894634A (en) * | 2014-03-03 | 2015-09-09 | 盛美半导体设备(上海)有限公司 | Novel electrochemical polishing device |
US10692735B2 (en) | 2017-07-28 | 2020-06-23 | Lam Research Corporation | Electro-oxidative metal removal in through mask interconnect fabrication |
US20230390887A1 (en) * | 2022-06-06 | 2023-12-07 | Applied Materials, Inc. | Face-up wafer electrochemical planarization apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839005A (en) * | 1987-05-22 | 1989-06-13 | Kabushiki Kaisha Kobe Seiko Sho | Electrolytic-abrasive polishing method of aluminum surface |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
US6234870B1 (en) * | 1999-08-24 | 2001-05-22 | International Business Machines Corporation | Serial intelligent electro-chemical-mechanical wafer processor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60186318A (en) | 1984-02-29 | 1985-09-21 | Hitachi Zosen Corp | Mirror-face finishing for titanium and its alloy |
JPS62136032A (en) * | 1985-12-09 | 1987-06-19 | Rohm Co Ltd | Working method for back surface of semiconductor wafer |
US5096550A (en) | 1990-10-15 | 1992-03-17 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for spatially uniform electropolishing and electrolytic etching |
US5927124A (en) * | 1996-03-05 | 1999-07-27 | Adaptive Motion Control Systems, Inc. | Apparatus for bending and cutting tubing, and method of using same |
JP3169838B2 (en) * | 1996-08-21 | 2001-05-28 | 東芝機械株式会社 | Servo motor control method |
DE19651566B4 (en) * | 1996-12-11 | 2006-09-07 | Assa Abloy Identification Technology Group Ab | Chip module and method for its production and a chip card |
JPH10180620A (en) | 1996-12-20 | 1998-07-07 | Nikon Corp | Polishing device and polishing method |
US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
US5893683A (en) * | 1997-04-29 | 1999-04-13 | Ingersoll Cutting Tool Company | Indexable insert router |
JP3478946B2 (en) * | 1997-07-02 | 2003-12-15 | 東芝機械株式会社 | Servo adjustment method and device |
US6171467B1 (en) * | 1997-11-25 | 2001-01-09 | The John Hopkins University | Electrochemical-control of abrasive polishing and machining rates |
JP3313643B2 (en) * | 1998-04-30 | 2002-08-12 | 東芝機械株式会社 | Servo control method in orbit machining with bite tool and servo controller for orbit machining |
US6250994B1 (en) * | 1998-10-01 | 2001-06-26 | Micron Technology, Inc. | Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads |
US6234780B1 (en) * | 1999-09-02 | 2001-05-22 | J.A.T. Engineering Co., Ltd. | Vacuum osmosis and solidification forming machine |
US6582281B2 (en) | 2000-03-23 | 2003-06-24 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
-
2000
- 2000-03-23 US US09/534,820 patent/US6582281B2/en not_active Expired - Lifetime
-
2001
- 2001-03-22 DE DE10195941T patent/DE10195941B4/en not_active Expired - Fee Related
- 2001-03-22 WO PCT/US2001/040358 patent/WO2001071796A2/en active IP Right Grant
- 2001-03-22 AU AU2001251734A patent/AU2001251734A1/en not_active Abandoned
- 2001-03-22 KR KR1020027012502A patent/KR100562440B1/en not_active IP Right Cessation
- 2001-03-22 JP JP2001569877A patent/JP3823056B2/en not_active Expired - Fee Related
-
2003
- 2003-06-20 US US10/600,907 patent/US6790130B2/en not_active Expired - Fee Related
-
2004
- 2004-06-18 US US10/871,126 patent/US7056194B2/en not_active Expired - Fee Related
-
2006
- 2006-06-05 US US11/449,201 patent/US7367871B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839005A (en) * | 1987-05-22 | 1989-06-13 | Kabushiki Kaisha Kobe Seiko Sho | Electrolytic-abrasive polishing method of aluminum surface |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
US6234870B1 (en) * | 1999-08-24 | 2001-05-22 | International Business Machines Corporation | Serial intelligent electro-chemical-mechanical wafer processor |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 010, no. 029 (M-451), 5 February 1986 (1986-02-05) & JP 60 186318 A (HITACHI ZOSEN KK), 21 September 1985 (1985-09-21) * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6582281B2 (en) | 2000-03-23 | 2003-06-24 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
US6790130B2 (en) | 2000-03-23 | 2004-09-14 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
US7056194B2 (en) | 2000-03-23 | 2006-06-06 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
US7367871B2 (en) | 2000-03-23 | 2008-05-06 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
US7456035B2 (en) | 2003-07-29 | 2008-11-25 | Lumination Llc | Flip chip light emitting diode devices having thinned or removed substrates |
US7842547B2 (en) | 2003-12-24 | 2010-11-30 | Lumination Llc | Laser lift-off of sapphire from a nitride flip-chip |
US7125734B2 (en) | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
CN104416453A (en) * | 2013-08-30 | 2015-03-18 | 罗门哈斯电子材料Cmp控股股份有限公司 | Method of chemical mechanical polishing a substrate |
CN104416453B (en) * | 2013-08-30 | 2017-07-28 | 罗门哈斯电子材料Cmp控股股份有限公司 | The method chemically-mechanicapolish polished to base material |
Also Published As
Publication number | Publication date |
---|---|
DE10195941B4 (en) | 2010-04-01 |
US20040087251A1 (en) | 2004-05-06 |
JP3823056B2 (en) | 2006-09-20 |
US6790130B2 (en) | 2004-09-14 |
US7056194B2 (en) | 2006-06-06 |
US20040221956A1 (en) | 2004-11-11 |
US6582281B2 (en) | 2003-06-24 |
JP2003535456A (en) | 2003-11-25 |
WO2001071796A3 (en) | 2002-03-14 |
AU2001251734A1 (en) | 2001-10-03 |
DE10195941T5 (en) | 2005-01-27 |
US20020061714A1 (en) | 2002-05-23 |
KR20020093851A (en) | 2002-12-16 |
US20060223425A1 (en) | 2006-10-05 |
US7367871B2 (en) | 2008-05-06 |
KR100562440B1 (en) | 2006-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6582281B2 (en) | Semiconductor processing methods of removing conductive material | |
US6368190B1 (en) | Electrochemical mechanical planarization apparatus and method | |
JP3145010B2 (en) | Semiconductor wafer processing apparatus and semiconductor wafer processing method | |
US6299741B1 (en) | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus | |
US7303462B2 (en) | Edge bead removal by an electro polishing process | |
US7297239B2 (en) | Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface | |
US6720263B2 (en) | Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection | |
KR100720849B1 (en) | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces | |
JPH10270412A (en) | Method and apparatus for planarizing workpiece | |
CN109129169A (en) | Chemical machinery polishing system and method | |
US7608173B2 (en) | Biased retaining ring | |
KR20020022600A (en) | Plating apparatus and plating method for substrate | |
JPH07321076A (en) | Manufacture of semiconductor device and abrasive device | |
KR20040104592A (en) | Polishing system and polishing method | |
US6875322B1 (en) | Electrochemical assisted CMP | |
JP2003311538A (en) | Polishing method, polishing apparatus and method for producing semiconductor device | |
WO2023139834A1 (en) | Chuck device | |
US20090061617A1 (en) | Edge bead removal process with ecmp technology | |
US20230339032A1 (en) | Anodic oxidation-assisted grinding apparatus and anodic oxidation-assisted grinding method | |
TW202406652A (en) | Anodizing auxiliary grinding device and anodizing auxiliary grinding method | |
KR100243268B1 (en) | Chemical mechanical polishing apparatus with electric chemical etching | |
US7993498B2 (en) | Apparatus and method of electrolytic removal of metals from a wafer surface | |
JP2003326419A (en) | Plating method, plating device, and polishing method, polishing device, and method for manufacturing semiconductor device | |
US20060169409A1 (en) | Electrochemically polishing conductive films on semiconductor wafers | |
KR20040035990A (en) | A chemical mechanical polishing machine |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
ENP | Entry into the national phase |
Ref document number: 2001 569877 Country of ref document: JP Kind code of ref document: A |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027012502 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027012502 Country of ref document: KR |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
RET | De translation (de og part 6b) |
Ref document number: 10195941 Country of ref document: DE Date of ref document: 20050127 Kind code of ref document: P |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10195941 Country of ref document: DE |
|
WWG | Wipo information: grant in national office |
Ref document number: 1020027012502 Country of ref document: KR |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8607 |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8607 |