WO2001075953A1 - Procede de fabrication de film mince et appareil de fabrication, transistor de film mince et procede de fabrication - Google Patents
Procede de fabrication de film mince et appareil de fabrication, transistor de film mince et procede de fabrication Download PDFInfo
- Publication number
- WO2001075953A1 WO2001075953A1 PCT/JP2001/002912 JP0102912W WO0175953A1 WO 2001075953 A1 WO2001075953 A1 WO 2001075953A1 JP 0102912 W JP0102912 W JP 0102912W WO 0175953 A1 WO0175953 A1 WO 0175953A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- manufacturing
- thin film
- thin
- substrate
- film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/240,570 US6913986B2 (en) | 2000-04-04 | 2001-04-04 | Method and apparatus for fabricating a thin film and thin film transistor and method of fabricating same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-101935 | 2000-04-04 | ||
JP2000101935 | 2000-04-04 | ||
JP2000-247351 | 2000-08-17 | ||
JP2000247351 | 2000-08-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001075953A1 true WO2001075953A1 (fr) | 2001-10-11 |
Family
ID=26589409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/002912 WO2001075953A1 (fr) | 2000-04-04 | 2001-04-04 | Procede de fabrication de film mince et appareil de fabrication, transistor de film mince et procede de fabrication |
Country Status (4)
Country | Link |
---|---|
US (1) | US6913986B2 (ja) |
KR (1) | KR100840423B1 (ja) |
TW (1) | TW495995B (ja) |
WO (1) | WO2001075953A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004090847A1 (ja) * | 2003-04-02 | 2004-10-21 | Matsushita Electric Industrial Co. Ltd. | 表示装置 |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
US8334537B2 (en) * | 2007-07-06 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
TWI456663B (zh) | 2007-07-20 | 2014-10-11 | Semiconductor Energy Lab | 顯示裝置之製造方法 |
JP5405850B2 (ja) * | 2009-02-17 | 2014-02-05 | 株式会社日立製作所 | 酸化物半導体を有する電界効果トランジスタの製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02307221A (ja) * | 1989-05-22 | 1990-12-20 | Nec Corp | Cvd膜の成長方法 |
JPH0750263A (ja) * | 1993-08-06 | 1995-02-21 | Toshiba Corp | 薄膜形成方法および薄膜エッチング方法 |
JPH08316152A (ja) * | 1995-05-23 | 1996-11-29 | Matsushita Electric Works Ltd | 化合物半導体の結晶成長方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0777264B2 (ja) | 1986-04-02 | 1995-08-16 | 三菱電機株式会社 | 薄膜トランジスタの製造方法 |
US4751193A (en) * | 1986-10-09 | 1988-06-14 | Q-Dot, Inc. | Method of making SOI recrystallized layers by short spatially uniform light pulses |
US4986214A (en) * | 1986-12-16 | 1991-01-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
JP3186237B2 (ja) | 1992-08-28 | 2001-07-11 | 株式会社日立製作所 | 配線形成方法および装置および配線形成用試料ホルダ |
JPH0697193A (ja) | 1992-09-11 | 1994-04-08 | Hitachi Ltd | 半導体装置とその製造方法 |
JP3497198B2 (ja) | 1993-02-03 | 2004-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置および薄膜トランジスタの作製方法 |
US5843225A (en) | 1993-02-03 | 1998-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor and process for fabricating semiconductor device |
EP1119053B1 (en) * | 1993-02-15 | 2011-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating TFT semiconductor device |
CN1052566C (zh) * | 1993-11-05 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
JP3464285B2 (ja) | 1994-08-26 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100274313B1 (ko) * | 1997-06-27 | 2000-12-15 | 김영환 | 하부 게이트형 박막트렌지스터의 제조방법 |
US6602765B2 (en) * | 2000-06-12 | 2003-08-05 | Seiko Epson Corporation | Fabrication method of thin-film semiconductor device |
-
2001
- 2001-04-04 US US10/240,570 patent/US6913986B2/en not_active Expired - Lifetime
- 2001-04-04 WO PCT/JP2001/002912 patent/WO2001075953A1/ja active Application Filing
- 2001-04-04 KR KR1020027012577A patent/KR100840423B1/ko not_active IP Right Cessation
- 2001-04-04 TW TW090108187A patent/TW495995B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02307221A (ja) * | 1989-05-22 | 1990-12-20 | Nec Corp | Cvd膜の成長方法 |
JPH0750263A (ja) * | 1993-08-06 | 1995-02-21 | Toshiba Corp | 薄膜形成方法および薄膜エッチング方法 |
JPH08316152A (ja) * | 1995-05-23 | 1996-11-29 | Matsushita Electric Works Ltd | 化合物半導体の結晶成長方法 |
Also Published As
Publication number | Publication date |
---|---|
US6913986B2 (en) | 2005-07-05 |
TW495995B (en) | 2002-07-21 |
KR20020086682A (ko) | 2002-11-18 |
US20030143784A1 (en) | 2003-07-31 |
KR100840423B1 (ko) | 2008-06-20 |
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