WO2001084235A3 - Multiple exposure process for formation of dense rectangular arrays - Google Patents

Multiple exposure process for formation of dense rectangular arrays Download PDF

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Publication number
WO2001084235A3
WO2001084235A3 PCT/US2001/011696 US0111696W WO0184235A3 WO 2001084235 A3 WO2001084235 A3 WO 2001084235A3 US 0111696 W US0111696 W US 0111696W WO 0184235 A3 WO0184235 A3 WO 0184235A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
reticle mask
exposure
starting position
nanostep
Prior art date
Application number
PCT/US2001/011696
Other languages
French (fr)
Other versions
WO2001084235A2 (en
Inventor
Scott J Bukofsky
Gerhard Kunkel
Richard Wise
Alfred Wong
Original Assignee
Infineon Technologies Corp
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Corp, Ibm filed Critical Infineon Technologies Corp
Publication of WO2001084235A2 publication Critical patent/WO2001084235A2/en
Publication of WO2001084235A3 publication Critical patent/WO2001084235A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation

Abstract

A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed to form hollow polygonally-shaped clusters with a gap in the center. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Alternatively, the workpiece can be fully exposed first by stepping a series of full steps, then going back to the starting position, making a nanostep to reset the starting position and re-exposing from the reset starting position in the same way with full steps from the nanostepped position. The clusters may be in the shape of a hexagon or a diamond.
PCT/US2001/011696 2000-04-28 2001-04-10 Multiple exposure process for formation of dense rectangular arrays WO2001084235A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/561,469 US6511791B1 (en) 2000-04-28 2000-04-28 Multiple exposure process for formation of dense rectangular arrays
US09/561,469 2000-04-28

Publications (2)

Publication Number Publication Date
WO2001084235A2 WO2001084235A2 (en) 2001-11-08
WO2001084235A3 true WO2001084235A3 (en) 2002-10-31

Family

ID=24242105

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/011696 WO2001084235A2 (en) 2000-04-28 2001-04-10 Multiple exposure process for formation of dense rectangular arrays

Country Status (3)

Country Link
US (1) US6511791B1 (en)
TW (1) TW495841B (en)
WO (1) WO2001084235A2 (en)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
JP3367460B2 (en) * 1999-04-09 2003-01-14 日本電気株式会社 Semiconductor device manufacturing method and photomask used therefor
US7064078B2 (en) * 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US7553426B2 (en) * 2005-03-01 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, system, and method for increasing data storage density in patterned media
US7667929B2 (en) * 2005-04-04 2010-02-23 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, method and system for fabricating a patterned media imprint master
US7236324B2 (en) * 2005-10-18 2007-06-26 Hitachi Global Storage Technologies Apparatus, method and system for fabricating servo patterns on high density patterned media
US7867693B1 (en) * 2006-03-03 2011-01-11 Kla-Tencor Technologies Corp. Methods for forming device structures on a wafer
KR100861363B1 (en) * 2006-07-21 2008-10-01 주식회사 하이닉스반도체 Pattern decomposition method for Double Exposure
JP5446648B2 (en) * 2008-10-07 2014-03-19 信越化学工業株式会社 Pattern formation method
US8133661B2 (en) * 2009-10-21 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Superimpose photomask and method of patterning
US8986911B2 (en) 2012-12-20 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-patterning photolithographic mask and method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284377A (en) * 1997-04-07 1998-10-23 Nikon Corp Exposure method and manufacture of device using the same
US5837426A (en) * 1996-07-29 1998-11-17 United Microelectronics Corp. Photolithographic process for mask programming of read-only memory devices
JPH10321520A (en) * 1997-03-19 1998-12-04 Toshiba Corp Producing method for circuit element
WO2001011430A1 (en) * 1999-08-10 2001-02-15 Infineon Technologies Ag Transfer of a pattern with a high structural density by multiple exposure of less dense sub-patterns
WO2001084240A1 (en) * 2000-04-28 2001-11-08 Infineon Technologies North America Corp. Exposing dense arrays by interleaved exposures

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US4702592A (en) * 1986-06-30 1987-10-27 Itt Corporation Reticle assembly, system, and method for using the same
US5308741A (en) 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
US6042998A (en) * 1993-09-30 2000-03-28 The University Of New Mexico Method and apparatus for extending spatial frequencies in photolithography images
US5563012A (en) 1994-06-30 1996-10-08 International Business Machines Corporation Multi mask method for selective mask feature enhancement
US5815245A (en) 1995-03-22 1998-09-29 Etec Systems, Inc. Scanning lithography system with opposing motion
US5905020A (en) * 1996-12-20 1999-05-18 Intel Corporation Method and apparatus for reducing the critical dimension difference of features printed on a substrate
US5972567A (en) * 1996-12-20 1999-10-26 Intel Corporation Method and apparatus for performing a double shift print on a substrate
US5780188A (en) * 1997-08-22 1998-07-14 Micron Technology, Inc. Lithographic system and method for exposing a target utilizing unequal stepping distances
US6136517A (en) * 1998-03-06 2000-10-24 Raytheon Company Method for photo composition of large area integrated circuits
US6278123B1 (en) * 1999-04-07 2001-08-21 Intel Corporation Reducing the critical dimension difference of features printed on a substrate
US6261727B1 (en) * 1999-12-28 2001-07-17 Taiwan Semiconductor Manufacturing Company DOF for both dense and isolated contact holes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5837426A (en) * 1996-07-29 1998-11-17 United Microelectronics Corp. Photolithographic process for mask programming of read-only memory devices
JPH10321520A (en) * 1997-03-19 1998-12-04 Toshiba Corp Producing method for circuit element
US6248508B1 (en) * 1997-03-19 2001-06-19 Kabushiki Kaisha Toshiba Manufacturing a circuit element
JPH10284377A (en) * 1997-04-07 1998-10-23 Nikon Corp Exposure method and manufacture of device using the same
US6265137B1 (en) * 1997-04-07 2001-07-24 Nikon Corporation Exposure method and device producing method using the same
WO2001011430A1 (en) * 1999-08-10 2001-02-15 Infineon Technologies Ag Transfer of a pattern with a high structural density by multiple exposure of less dense sub-patterns
WO2001084240A1 (en) * 2000-04-28 2001-11-08 Infineon Technologies North America Corp. Exposing dense arrays by interleaved exposures

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 03 31 March 1999 (1999-03-31) *

Also Published As

Publication number Publication date
WO2001084235A2 (en) 2001-11-08
TW495841B (en) 2002-07-21
US6511791B1 (en) 2003-01-28

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