WO2001084682A3 - Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers - Google Patents

Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers Download PDF

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Publication number
WO2001084682A3
WO2001084682A3 PCT/US2001/014505 US0114505W WO0184682A3 WO 2001084682 A3 WO2001084682 A3 WO 2001084682A3 US 0114505 W US0114505 W US 0114505W WO 0184682 A3 WO0184682 A3 WO 0184682A3
Authority
WO
WIPO (PCT)
Prior art keywords
cavity
sampled
light beam
bragg reflector
distributed bragg
Prior art date
Application number
PCT/US2001/014505
Other languages
French (fr)
Other versions
WO2001084682A2 (en
Inventor
Gregory A Fish
Larry A Coldren
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Priority to CA002405852A priority Critical patent/CA2405852A1/en
Priority to DE60135106T priority patent/DE60135106D1/en
Priority to EP01933039A priority patent/EP1281221B8/en
Priority to AU2001259503A priority patent/AU2001259503A1/en
Priority to JP2001581391A priority patent/JP4989834B2/en
Publication of WO2001084682A2 publication Critical patent/WO2001084682A2/en
Publication of WO2001084682A3 publication Critical patent/WO2001084682A3/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209Sampled grating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis

Abstract

A tunable laser comprised of a gain section for creating a light beam by spontaneous emission over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a cavity for guiding and reflecting the light beam, a front mirror bounding an end of the cavity, and a back mirror bounding an opposite end of the cavity. The back mirror has a λeffB approximately equal to αTune, where λeffB is an effective coupling constant and αTune is the maximum amount of propagation loss anticipated for an amount of peak tuning required, and a length of the back mirror is made to produce greater than approximately 80 % reflectivity.
PCT/US2001/014505 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers WO2001084682A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA002405852A CA2405852A1 (en) 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers
DE60135106T DE60135106D1 (en) 2000-05-04 2001-05-04 DISTRIBUTED BRAGG REFLECTOR WITH GRID
EP01933039A EP1281221B8 (en) 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers
AU2001259503A AU2001259503A1 (en) 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers
JP2001581391A JP4989834B2 (en) 2000-05-04 2001-05-04 Improved mirror and cavity design for sample grating distributed Bragg reflector lasers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20305200P 2000-05-04 2000-05-04
US60/203,052 2000-05-04

Publications (2)

Publication Number Publication Date
WO2001084682A2 WO2001084682A2 (en) 2001-11-08
WO2001084682A3 true WO2001084682A3 (en) 2002-04-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/014505 WO2001084682A2 (en) 2000-05-04 2001-05-04 Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers

Country Status (9)

Country Link
US (1) US6590924B2 (en)
EP (1) EP1281221B8 (en)
JP (1) JP4989834B2 (en)
CN (1) CN1240167C (en)
AT (1) ATE403248T1 (en)
AU (1) AU2001259503A1 (en)
CA (1) CA2405852A1 (en)
DE (1) DE60135106D1 (en)
WO (1) WO2001084682A2 (en)

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US6691480B2 (en) 2002-05-03 2004-02-17 Faus Group Embossed-in-register panel system
US8209928B2 (en) 1999-12-13 2012-07-03 Faus Group Embossed-in-registration flooring system
GB2377549A (en) * 2001-07-14 2003-01-15 Marconi Caswell Ltd Tuneable laser
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8181407B2 (en) 2002-05-03 2012-05-22 Faus Group Flooring system having sub-panels
US7836649B2 (en) 2002-05-03 2010-11-23 Faus Group, Inc. Flooring system having microbevels
US8112958B2 (en) 2002-05-03 2012-02-14 Faus Group Flooring system having complementary sub-panels
CA2581614A1 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8201377B2 (en) 2004-11-05 2012-06-19 Faus Group, Inc. Flooring system having multiple alignment points
US20060104321A1 (en) * 2004-11-15 2006-05-18 Lightip Technologies Inc. Q-modulated semiconductor laser with electro-absorptive grating structures
JP4657853B2 (en) * 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 Semiconductor laser, laser module, optical component, laser device, semiconductor laser manufacturing method, and semiconductor laser control method
EP1978612B1 (en) * 2007-04-05 2017-08-16 Sumitomo Electric Device Innovations, Inc. Optical semiconductor device and method of controlling the same
EP2174392B1 (en) * 2007-08-02 2020-04-29 EFFECT Photonics B.V. Semiconductor laser device
US9595804B2 (en) * 2011-07-22 2017-03-14 Insight Photonic Solutions, Inc. System and method of dynamic and adaptive creation of a wavelength continuous and prescribed wavelength versus time sweep from a laser
JP2013219192A (en) * 2012-04-09 2013-10-24 Fujitsu Ltd Semiconductor laser
JP6241919B2 (en) * 2013-09-30 2017-12-06 住友電工デバイス・イノベーション株式会社 Optical semiconductor device
JP2016051807A (en) 2014-08-29 2016-04-11 富士通オプティカルコンポーネンツ株式会社 Semiconductor laser
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
JP6684094B2 (en) 2015-03-20 2020-04-22 古河電気工業株式会社 Tunable laser device and laser module
JP6831782B2 (en) 2015-06-10 2021-02-17 古河電気工業株式会社 Pulse laser device
CN105356292B (en) * 2015-11-30 2018-11-02 武汉电信器件有限公司 A kind of tunable wavelength semiconductor laser
CN106981819B (en) * 2016-01-15 2019-05-28 华为技术有限公司 A kind of tunable laser and its control method
CN106941241B (en) * 2016-10-21 2019-06-04 武汉光迅科技股份有限公司 A kind of laser processing method and its application method based on EBL
CN111162454B (en) * 2020-01-02 2021-03-12 中国科学院半导体研究所 Broadband tuning system and tuning method

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Also Published As

Publication number Publication date
US6590924B2 (en) 2003-07-08
CN1428018A (en) 2003-07-02
ATE403248T1 (en) 2008-08-15
EP1281221A2 (en) 2003-02-05
JP4989834B2 (en) 2012-08-01
US20020105990A1 (en) 2002-08-08
CA2405852A1 (en) 2001-11-08
CN1240167C (en) 2006-02-01
WO2001084682A2 (en) 2001-11-08
AU2001259503A1 (en) 2001-11-12
EP1281221B1 (en) 2008-07-30
EP1281221B8 (en) 2008-10-15
JP2003533037A (en) 2003-11-05
DE60135106D1 (en) 2008-09-11

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