WO2001084682A3 - Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers - Google Patents
Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers Download PDFInfo
- Publication number
- WO2001084682A3 WO2001084682A3 PCT/US2001/014505 US0114505W WO0184682A3 WO 2001084682 A3 WO2001084682 A3 WO 2001084682A3 US 0114505 W US0114505 W US 0114505W WO 0184682 A3 WO0184682 A3 WO 0184682A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cavity
- sampled
- light beam
- bragg reflector
- distributed bragg
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002405852A CA2405852A1 (en) | 2000-05-04 | 2001-05-04 | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers |
DE60135106T DE60135106D1 (en) | 2000-05-04 | 2001-05-04 | DISTRIBUTED BRAGG REFLECTOR WITH GRID |
EP01933039A EP1281221B8 (en) | 2000-05-04 | 2001-05-04 | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers |
AU2001259503A AU2001259503A1 (en) | 2000-05-04 | 2001-05-04 | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers |
JP2001581391A JP4989834B2 (en) | 2000-05-04 | 2001-05-04 | Improved mirror and cavity design for sample grating distributed Bragg reflector lasers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20305200P | 2000-05-04 | 2000-05-04 | |
US60/203,052 | 2000-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001084682A2 WO2001084682A2 (en) | 2001-11-08 |
WO2001084682A3 true WO2001084682A3 (en) | 2002-04-11 |
Family
ID=22752272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/014505 WO2001084682A2 (en) | 2000-05-04 | 2001-05-04 | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers |
Country Status (9)
Country | Link |
---|---|
US (1) | US6590924B2 (en) |
EP (1) | EP1281221B8 (en) |
JP (1) | JP4989834B2 (en) |
CN (1) | CN1240167C (en) |
AT (1) | ATE403248T1 (en) |
AU (1) | AU2001259503A1 (en) |
CA (1) | CA2405852A1 (en) |
DE (1) | DE60135106D1 (en) |
WO (1) | WO2001084682A2 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6728279B1 (en) * | 1999-05-17 | 2004-04-27 | Interuniversitair Microelektronica Centrum | Widely wavelength tunable integrated semiconductor device and method for widely tuning semiconductor devices |
ES2168045B2 (en) | 1999-11-05 | 2004-01-01 | Ind Aux Es Faus Sl | NEW DIRECT LAMINATED FLOOR. |
US6691480B2 (en) | 2002-05-03 | 2004-02-17 | Faus Group | Embossed-in-register panel system |
US8209928B2 (en) | 1999-12-13 | 2012-07-03 | Faus Group | Embossed-in-registration flooring system |
GB2377549A (en) * | 2001-07-14 | 2003-01-15 | Marconi Caswell Ltd | Tuneable laser |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US8181407B2 (en) | 2002-05-03 | 2012-05-22 | Faus Group | Flooring system having sub-panels |
US7836649B2 (en) | 2002-05-03 | 2010-11-23 | Faus Group, Inc. | Flooring system having microbevels |
US8112958B2 (en) | 2002-05-03 | 2012-02-14 | Faus Group | Flooring system having complementary sub-panels |
CA2581614A1 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8201377B2 (en) | 2004-11-05 | 2012-06-19 | Faus Group, Inc. | Flooring system having multiple alignment points |
US20060104321A1 (en) * | 2004-11-15 | 2006-05-18 | Lightip Technologies Inc. | Q-modulated semiconductor laser with electro-absorptive grating structures |
JP4657853B2 (en) * | 2005-08-11 | 2011-03-23 | 住友電工デバイス・イノベーション株式会社 | Semiconductor laser, laser module, optical component, laser device, semiconductor laser manufacturing method, and semiconductor laser control method |
EP1978612B1 (en) * | 2007-04-05 | 2017-08-16 | Sumitomo Electric Device Innovations, Inc. | Optical semiconductor device and method of controlling the same |
EP2174392B1 (en) * | 2007-08-02 | 2020-04-29 | EFFECT Photonics B.V. | Semiconductor laser device |
US9595804B2 (en) * | 2011-07-22 | 2017-03-14 | Insight Photonic Solutions, Inc. | System and method of dynamic and adaptive creation of a wavelength continuous and prescribed wavelength versus time sweep from a laser |
JP2013219192A (en) * | 2012-04-09 | 2013-10-24 | Fujitsu Ltd | Semiconductor laser |
JP6241919B2 (en) * | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | Optical semiconductor device |
JP2016051807A (en) | 2014-08-29 | 2016-04-11 | 富士通オプティカルコンポーネンツ株式会社 | Semiconductor laser |
US9312662B1 (en) | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
JP6684094B2 (en) | 2015-03-20 | 2020-04-22 | 古河電気工業株式会社 | Tunable laser device and laser module |
JP6831782B2 (en) | 2015-06-10 | 2021-02-17 | 古河電気工業株式会社 | Pulse laser device |
CN105356292B (en) * | 2015-11-30 | 2018-11-02 | 武汉电信器件有限公司 | A kind of tunable wavelength semiconductor laser |
CN106981819B (en) * | 2016-01-15 | 2019-05-28 | 华为技术有限公司 | A kind of tunable laser and its control method |
CN106941241B (en) * | 2016-10-21 | 2019-06-04 | 武汉光迅科技股份有限公司 | A kind of laser processing method and its application method based on EBL |
CN111162454B (en) * | 2020-01-02 | 2021-03-12 | 中国科学院半导体研究所 | Broadband tuning system and tuning method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622672A (en) | 1984-01-20 | 1986-11-11 | At&T Bell Laboratories | Self-stabilized semiconductor lasers |
EP0391334B1 (en) * | 1989-04-04 | 1994-08-31 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and wavelength selective fitter, and methods of driving the same |
US5088097A (en) | 1990-04-04 | 1992-02-11 | Canon Kabushiki Kaisha | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
US5325392A (en) * | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
JPH0653591A (en) * | 1992-08-03 | 1994-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Element for converting optical frequency |
JP3086767B2 (en) * | 1993-05-31 | 2000-09-11 | 株式会社東芝 | Laser element |
US5379318A (en) * | 1994-01-31 | 1995-01-03 | Telefonaktiebolaget L M Ericsson | Alternating grating tunable DBR laser |
JP3226073B2 (en) | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | Semiconductor laser capable of polarization modulation and its use |
US5841799A (en) | 1994-12-17 | 1998-11-24 | Canon Kabushiki Kaisha | Semiconductor laser, modulation method therefor and optical communication system using the same |
US5579328A (en) | 1995-08-10 | 1996-11-26 | Northern Telecom Limited | Digital control of laser diode power levels |
US6100975A (en) * | 1996-05-13 | 2000-08-08 | Process Instruments, Inc. | Raman spectroscopy apparatus and method using external cavity laser for continuous chemical analysis of sample streams |
US5715271A (en) | 1996-08-01 | 1998-02-03 | Northern Telecom Limited | Polarization independent grating resonator filter |
SE519081C3 (en) | 1998-01-21 | 2003-02-19 | Altitun Ab | Method and apparatus for optimizing the laser operating point and device |
GB9809583D0 (en) * | 1998-05-06 | 1998-07-01 | Marconi Gec Ltd | Optical devices |
TW393813B (en) * | 1998-12-03 | 2000-06-11 | Nat Science Council | Adjustable monolithic multi-wavelength laser arrays |
US6421365B1 (en) * | 1999-11-18 | 2002-07-16 | Lambda Physik Ag | Narrow band excimer or molecular fluorine laser having an output coupling interferometer |
US6349106B1 (en) * | 1999-09-02 | 2002-02-19 | Agility Communications, Inc. | Method for converting an optical wavelength using a monolithic wavelength converter assembly |
-
2001
- 2001-05-04 CN CNB01808964XA patent/CN1240167C/en not_active Expired - Lifetime
- 2001-05-04 AU AU2001259503A patent/AU2001259503A1/en not_active Abandoned
- 2001-05-04 JP JP2001581391A patent/JP4989834B2/en not_active Expired - Lifetime
- 2001-05-04 AT AT01933039T patent/ATE403248T1/en not_active IP Right Cessation
- 2001-05-04 WO PCT/US2001/014505 patent/WO2001084682A2/en active Application Filing
- 2001-05-04 US US09/848,791 patent/US6590924B2/en not_active Expired - Lifetime
- 2001-05-04 EP EP01933039A patent/EP1281221B8/en not_active Expired - Lifetime
- 2001-05-04 CA CA002405852A patent/CA2405852A1/en not_active Abandoned
- 2001-05-04 DE DE60135106T patent/DE60135106D1/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
Non-Patent Citations (4)
Title |
---|
ISHII H ET AL: "Broad-range wavelength coverage (62.4 nm) with superstructure-grating DBR laser", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 32, no. 5, 29 February 1996 (1996-02-29), pages 454 - 455, XP006004827, ISSN: 0013-5194 * |
JAYARAMAN V ET AL: "Widely tunable continuous-wave InGaAsP/InP sampled grating lasers", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 30, no. 18, 1 September 1994 (1994-09-01), pages 1492 - 1494, XP006001009, ISSN: 0013-5194 * |
MASON B ET AL: "RIDGE WAVEGUIDE SAMPLED GRATING DBR LASERS WITH 22-NM QUASI- CONTINUOUS TUNING RANGE", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 10, no. 9, 1 September 1998 (1998-09-01), pages 1211 - 1213, XP000783213, ISSN: 1041-1135 * |
VIJAYSEKHAR JAYARAMAN ET AL: "THEORY, DESIGN, AND PERFORMANCE OF EXTENDED TUNING RANGE SEMICONDUCTOR LASERS WITH SAMPLED GRATINGS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 29, no. 6, 1 June 1993 (1993-06-01), pages 1824 - 1834, XP000397620, ISSN: 0018-9197 * |
Also Published As
Publication number | Publication date |
---|---|
US6590924B2 (en) | 2003-07-08 |
CN1428018A (en) | 2003-07-02 |
ATE403248T1 (en) | 2008-08-15 |
EP1281221A2 (en) | 2003-02-05 |
JP4989834B2 (en) | 2012-08-01 |
US20020105990A1 (en) | 2002-08-08 |
CA2405852A1 (en) | 2001-11-08 |
CN1240167C (en) | 2006-02-01 |
WO2001084682A2 (en) | 2001-11-08 |
AU2001259503A1 (en) | 2001-11-12 |
EP1281221B1 (en) | 2008-07-30 |
EP1281221B8 (en) | 2008-10-15 |
JP2003533037A (en) | 2003-11-05 |
DE60135106D1 (en) | 2008-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2001084682A3 (en) | Improved mirror and cavity designs for sampled-grating distributed bragg reflector lasers | |
US5905745A (en) | Noise suppression in cladding pumped fiber lasers | |
US5914972A (en) | Thermal compensators for waveguide DBR laser sources | |
US6118802A (en) | Optically amplifying semiconductor diodes with curved waveguides for external cavities | |
WO2002073754A3 (en) | Narrow band high power fibre lasers | |
CA2212434A1 (en) | Dual-wavelength pumped low noise fiber laser | |
US8040925B2 (en) | Broadband fiber laser | |
US5488620A (en) | Passively mode locked-laser and method for generating a pseudo random optical pulse train | |
Morton et al. | Hybrid soliton pulse source with fiber Bragg reflector | |
US20030021302A1 (en) | Raman cascade light sources | |
WO2003032453A3 (en) | Two-section distributed bragg reflector laser | |
US7136401B2 (en) | Multiple output Raman fiber laser with stable and small output power for seed applications | |
AU2001266663A1 (en) | High-power, manufacturable sampled grating distributed bragg reflector lasers | |
KR100448743B1 (en) | Distributed feedback ring laser | |
JP2002503392A (en) | Laser system using phase conjugate feedback | |
CA1297935C (en) | Wavelength locked dye lazer with transverse pumping | |
US6771687B1 (en) | Stabilized laser source | |
WO2003028172A3 (en) | Step-tunable external-cavity surface-emitting semiconductor laser | |
AU7076998A (en) | Optical resonators with discontinuous phase elements | |
US4512021A (en) | Passively Q-switched square bore waveguide laser | |
WO2002071630A3 (en) | Vcsel with single lasing-reflectivity peak reflector | |
CN114094445B (en) | Light beam processor | |
US20040246567A1 (en) | Gain-clamped optical amplifier | |
Ohki et al. | Pump laser module for co-propagating Raman amplifier | |
US4672625A (en) | Methods and apparatus for maximizing the power output of a gas laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ CZ DE DE DK DK DM DZ EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AG AL AM AT AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ CZ DE DE DK DK DM DZ EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2405852 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 01808964X Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001933039 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2001933039 Country of ref document: EP |