WO2001086697A3 - Inductive plasma loop enhancing magnetron sputtering - Google Patents

Inductive plasma loop enhancing magnetron sputtering Download PDF

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Publication number
WO2001086697A3
WO2001086697A3 PCT/US2001/015403 US0115403W WO0186697A3 WO 2001086697 A3 WO2001086697 A3 WO 2001086697A3 US 0115403 W US0115403 W US 0115403W WO 0186697 A3 WO0186697 A3 WO 0186697A3
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WO
WIPO (PCT)
Prior art keywords
tube
plasma
processing space
magnetron sputtering
inductive plasma
Prior art date
Application number
PCT/US2001/015403
Other languages
French (fr)
Other versions
WO2001086697A2 (en
Inventor
Shaoher X Pan
Hiroji Hanawa
John C Forster
Fusen Chen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2001582819A priority Critical patent/JP2004501277A/en
Publication of WO2001086697A2 publication Critical patent/WO2001086697A2/en
Publication of WO2001086697A3 publication Critical patent/WO2001086697A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through the processing space. A tube has its two ends connected to the vacuum chamber on confronting sides of the processing space. An RF coil powered by an RF power supply is positioned adjacent to the tube outside of the chamber and aligned to produce an RF magnetic field around the toroidal circumference of the tube such that an electric field is induced along the tube axis. Thereby, a plasma is generated in the tube in a loop circling through the processing space.
PCT/US2001/015403 2000-05-11 2001-05-11 Inductive plasma loop enhancing magnetron sputtering WO2001086697A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001582819A JP2004501277A (en) 2000-05-11 2001-05-11 Induction plasma loop enhances magnetron sputtering

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/569,736 US6679981B1 (en) 2000-05-11 2000-05-11 Inductive plasma loop enhancing magnetron sputtering
US09/569,736 2000-05-11

Publications (2)

Publication Number Publication Date
WO2001086697A2 WO2001086697A2 (en) 2001-11-15
WO2001086697A3 true WO2001086697A3 (en) 2002-04-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/015403 WO2001086697A2 (en) 2000-05-11 2001-05-11 Inductive plasma loop enhancing magnetron sputtering

Country Status (3)

Country Link
US (1) US6679981B1 (en)
JP (1) JP2004501277A (en)
WO (1) WO2001086697A2 (en)

Families Citing this family (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW584905B (en) * 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
US6893907B2 (en) * 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) * 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
KR100775175B1 (en) * 2001-10-31 2007-11-12 동경 엘렉트론 주식회사 Method of etching high aspect ratio features
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6802366B1 (en) * 2002-10-31 2004-10-12 Advanced Energy Industries, Inc. Swage method for cooling pipes
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
KR100488348B1 (en) * 2002-11-14 2005-05-10 최대규 Plasma process chamber and system
US7355687B2 (en) * 2003-02-20 2008-04-08 Hunter Engineering Company Method and apparatus for vehicle service system with imaging components
US20060102871A1 (en) * 2003-04-08 2006-05-18 Xingwu Wang Novel composition
US7115185B1 (en) * 2003-09-16 2006-10-03 Advanced Energy Industries, Inc. Pulsed excitation of inductively coupled plasma sources
US9771648B2 (en) 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US8058156B2 (en) * 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
SG163544A1 (en) * 2005-03-30 2010-08-30 Panasonic Corp Impurity introducing apparatus and impurity introducing method
US7428915B2 (en) * 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
WO2008089168A2 (en) * 2007-01-19 2008-07-24 Applied Materials, Inc. Plasma immersion chamber
CN101182628B (en) * 2007-12-13 2010-06-02 上海交通大学 Sputtering coating ion beam irradiation reinforcing method
US8269592B1 (en) * 2010-05-05 2012-09-18 Lockheed Martin Corporation Pulse transformer
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
JP5781349B2 (en) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 Plasma processing equipment
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (en) 2018-02-28 2022-06-01 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
CN112335342B (en) 2018-06-14 2023-07-14 Mks仪器公司 Radical output monitor for remote plasma source and method of use
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11948784B2 (en) 2021-10-21 2024-04-02 Applied Materials, Inc. Tilted PVD source with rotating pedestal

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
EP0546852A1 (en) * 1991-12-13 1993-06-16 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
EP0836218A2 (en) * 1996-10-08 1998-04-15 Applied Materials, Inc. Active shield for generating a plasma for sputtering
WO1999000823A1 (en) * 1997-06-26 1999-01-07 Applied Science And Technology, Inc. Toroidal low-field reactive gas source

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2344138A (en) 1940-05-20 1944-03-14 Chemical Developments Corp Coating method
US3109100A (en) 1960-05-19 1963-10-29 Automatic Canteen Co Photosensitive currency testing device
US3291715A (en) * 1963-08-19 1966-12-13 Litton Systems Inc Apparatus for cathode sputtering including a plasmaconfining chamber
JPH0763056B2 (en) 1986-08-06 1995-07-05 三菱電機株式会社 Thin film forming equipment
US4778561A (en) 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5106827A (en) 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
US5505780A (en) 1992-03-18 1996-04-09 International Business Machines Corporation High-density plasma-processing tool with toroidal magnetic field
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US5702530A (en) 1995-06-23 1997-12-30 Applied Materials, Inc. Distributed microwave plasma reactor for semiconductor processing
US5770982A (en) 1996-10-29 1998-06-23 Sematech, Inc. Self isolating high frequency saturable reactor
US5897752A (en) * 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US6041735A (en) 1998-03-02 2000-03-28 Ball Semiconductor, Inc. Inductively coupled plasma powder vaporization for fabricating integrated circuits
US5998933A (en) 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
US6392351B1 (en) * 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
JP2003506888A (en) 1999-08-06 2003-02-18 アドバンスト・エナジー・インダストリーズ・インコーポレイテッド Inductively coupled annular plasma source apparatus and method for processing gases and materials
US6348126B1 (en) * 2000-08-11 2002-02-19 Applied Materials, Inc. Externally excited torroidal plasma source
US6453842B1 (en) * 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
EP0546852A1 (en) * 1991-12-13 1993-06-16 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
EP0836218A2 (en) * 1996-10-08 1998-04-15 Applied Materials, Inc. Active shield for generating a plasma for sputtering
WO1999000823A1 (en) * 1997-06-26 1999-01-07 Applied Science And Technology, Inc. Toroidal low-field reactive gas source

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