WO2001088993A3 - A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES - Google Patents
A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES Download PDFInfo
- Publication number
- WO2001088993A3 WO2001088993A3 PCT/CA2001/000523 CA0100523W WO0188993A3 WO 2001088993 A3 WO2001088993 A3 WO 2001088993A3 CA 0100523 W CA0100523 W CA 0100523W WO 0188993 A3 WO0188993 A3 WO 0188993A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quantum well
- ingaasp
- well structures
- modulator
- gallium arsenide
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 title 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/929—PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001252071A AU2001252071A1 (en) | 2000-05-19 | 2001-04-09 | A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20526100P | 2000-05-19 | 2000-05-19 | |
US60/205,261 | 2000-05-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001088993A2 WO2001088993A2 (en) | 2001-11-22 |
WO2001088993A3 true WO2001088993A3 (en) | 2002-02-28 |
Family
ID=22761486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CA2001/000523 WO2001088993A2 (en) | 2000-05-19 | 2001-04-09 | A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020030185A1 (en) |
AU (1) | AU2001252071A1 (en) |
CA (1) | CA2343694A1 (en) |
WO (1) | WO2001088993A2 (en) |
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US6984538B2 (en) * | 2001-07-26 | 2006-01-10 | Phosistor Technologies, Inc. | Method for quantum well intermixing using pre-annealing enhanced defects diffusion |
US9372306B1 (en) | 2001-10-09 | 2016-06-21 | Infinera Corporation | Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
US6888666B1 (en) * | 2001-11-16 | 2005-05-03 | Dakota Investment Group, Inc. | Dynamically reconfigurable optical amplification element |
US6594295B1 (en) * | 2001-11-16 | 2003-07-15 | Fox-Tek, Inc. | Semiconductor laser with disordered and non-disordered quantum well regions |
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US10012797B1 (en) | 2002-10-08 | 2018-07-03 | Infinera Corporation | Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
GB0225586D0 (en) * | 2002-11-02 | 2002-12-11 | Intense Photonics Ltd | Quantum well intermixing in semiconductor photonic devices |
US7233709B2 (en) * | 2003-11-04 | 2007-06-19 | Avago Technologies Fiber Ip (Singapore) Ltd. Pte. | Electro-absorption modulator |
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US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
WO2007065614A2 (en) | 2005-12-07 | 2007-06-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
WO2008069872A2 (en) * | 2006-10-24 | 2008-06-12 | Lev Deych | Multiple-quantum-well structure with electric field control |
WO2010065731A2 (en) * | 2008-12-03 | 2010-06-10 | Innolume Gmbh | Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser |
CN104254951B (en) | 2013-02-19 | 2018-06-05 | 索尔思光电(成都)有限公司 | Suitable for modulating the variable frequency range gap modulation device of Optical Maser System |
US9819144B2 (en) | 2015-05-14 | 2017-11-14 | Apple Inc. | High-efficiency vertical emitters with improved heat sinking |
US10034375B2 (en) | 2015-05-21 | 2018-07-24 | Apple Inc. | Circuit substrate with embedded heat sink |
US9735539B2 (en) * | 2015-07-20 | 2017-08-15 | Apple Inc. | VCSEL structure with embedded heat sink |
US10881028B1 (en) | 2019-07-03 | 2020-12-29 | Apple Inc. | Efficient heat removal from electronic modules |
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US11699715B1 (en) | 2020-09-06 | 2023-07-11 | Apple Inc. | Flip-chip mounting of optoelectronic chips |
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2001
- 2001-04-09 WO PCT/CA2001/000523 patent/WO2001088993A2/en active Application Filing
- 2001-04-09 AU AU2001252071A patent/AU2001252071A1/en not_active Abandoned
- 2001-04-11 CA CA002343694A patent/CA2343694A1/en not_active Abandoned
- 2001-04-12 US US09/833,078 patent/US20020030185A1/en not_active Abandoned
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2002
- 2002-05-09 US US10/140,824 patent/US6611007B2/en not_active Expired - Fee Related
Non-Patent Citations (6)
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HAYSOM J E ET AL: "Quantum well intermixing caused by nonstoichiometric InP", CONFERENCE PROCEEDINGS. 2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (CAT. NO.00CH37107), CONFERENCE PROCEEDINGS. 2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, WILLIAMSBURG, VA, USA, 14-18 MAY 200, 2000, Piscataway, NJ, USA, IEEE, USA, pages 56 - 59, XP002183000, ISBN: 0-7803-6320-5 * |
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Also Published As
Publication number | Publication date |
---|---|
US6611007B2 (en) | 2003-08-26 |
US20020127752A1 (en) | 2002-09-12 |
AU2001252071A1 (en) | 2001-11-26 |
WO2001088993A2 (en) | 2001-11-22 |
CA2343694A1 (en) | 2001-11-19 |
US20020030185A1 (en) | 2002-03-14 |
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