WO2001095378A3 - Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers - Google Patents

Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Download PDF

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Publication number
WO2001095378A3
WO2001095378A3 PCT/US2001/018585 US0118585W WO0195378A3 WO 2001095378 A3 WO2001095378 A3 WO 2001095378A3 US 0118585 W US0118585 W US 0118585W WO 0195378 A3 WO0195378 A3 WO 0195378A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
electrically conductive
ruthenium
conductive layer
ambient
Prior art date
Application number
PCT/US2001/018585
Other languages
French (fr)
Other versions
WO2001095378A2 (en
Inventor
Vishnu K Agarwal
Garo Derderian
Gurtej S Sandhu
Weimin M Li
Mark Visokay
Cem Basceri
Sam Yang
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP01942105.6A priority Critical patent/EP1297562B1/en
Priority to KR1020027016729A priority patent/KR100746192B1/en
Priority to JP2002502821A priority patent/JP4216585B2/en
Priority to AU2001275398A priority patent/AU2001275398A1/en
Publication of WO2001095378A2 publication Critical patent/WO2001095378A2/en
Publication of WO2001095378A3 publication Critical patent/WO2001095378A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31637—Deposition of Tantalum oxides, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500 °C and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Anstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as a first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.
PCT/US2001/018585 2000-06-08 2001-06-07 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers WO2001095378A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP01942105.6A EP1297562B1 (en) 2000-06-08 2001-06-07 Methods for forming and integrated circuit structures containing ruthenium containing layers
KR1020027016729A KR100746192B1 (en) 2000-06-08 2001-06-07 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
JP2002502821A JP4216585B2 (en) 2000-06-08 2001-06-07 Method for forming a layer containing ruthenium and tungsten, and integrated circuit structure including these layers
AU2001275398A AU2001275398A1 (en) 2000-06-08 2001-06-07 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/590,795 US7253076B1 (en) 2000-06-08 2000-06-08 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
US09/590,795 2000-06-08

Publications (2)

Publication Number Publication Date
WO2001095378A2 WO2001095378A2 (en) 2001-12-13
WO2001095378A3 true WO2001095378A3 (en) 2002-06-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/018585 WO2001095378A2 (en) 2000-06-08 2001-06-07 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers

Country Status (7)

Country Link
US (5) US7253076B1 (en)
EP (1) EP1297562B1 (en)
JP (1) JP4216585B2 (en)
KR (1) KR100746192B1 (en)
CN (2) CN1270352C (en)
AU (1) AU2001275398A1 (en)
WO (1) WO2001095378A2 (en)

Families Citing this family (144)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974766B1 (en) * 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6620723B1 (en) * 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7112503B1 (en) 2000-08-31 2006-09-26 Micron Technology, Inc. Enhanced surface area capacitor fabrication methods
US6420230B1 (en) 2000-08-31 2002-07-16 Micron Technology, Inc. Capacitor fabrication methods and capacitor constructions
US7217615B1 (en) 2000-08-31 2007-05-15 Micron Technology, Inc. Capacitor fabrication methods including forming a conductive layer
US6617248B1 (en) 2000-11-10 2003-09-09 Micron Technology, Inc. Method for forming a ruthenium metal layer
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
US6524867B2 (en) * 2000-12-28 2003-02-25 Micron Technology, Inc. Method for forming platinum-rhodium stack as an oxygen barrier
US6518610B2 (en) 2001-02-20 2003-02-11 Micron Technology, Inc. Rhodium-rich oxygen barriers
RU2269545C2 (en) * 2001-02-23 2006-02-10 Дзе Гейтс Корпорейшн Method for directly binding rubber to at least second substrate and article made this way
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
JP3863391B2 (en) * 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 Semiconductor device
US6849545B2 (en) * 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US6495428B1 (en) * 2001-07-11 2002-12-17 Micron Technology, Inc. Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US20070009658A1 (en) * 2001-07-13 2007-01-11 Yoo Jong H Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process
JP2005518088A (en) 2001-07-16 2005-06-16 アプライド　マテリアルズ　インコーポレイテッド Formation of tungsten composite film
US20030020122A1 (en) * 2001-07-24 2003-01-30 Joo Jae Hyun Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby
US7700454B2 (en) 2001-07-24 2010-04-20 Samsung Electronics Co., Ltd. Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US20080268635A1 (en) * 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
KR100464404B1 (en) * 2001-07-27 2005-01-03 삼성전자주식회사 Method for manufacturing a semiconductor device
US6458652B1 (en) * 2001-08-20 2002-10-01 Micron Technology, Inc. Methods of forming capacitor electrodes
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6809026B2 (en) * 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6670071B2 (en) * 2002-01-15 2003-12-30 Quallion Llc Electric storage battery construction and method of manufacture
US6794704B2 (en) 2002-01-16 2004-09-21 Micron Technology, Inc. Method for enhancing electrode surface area in DRAM cell capacitors
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) * 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US20030159653A1 (en) * 2002-02-28 2003-08-28 Dando Ross S. Manifold assembly for feeding reactive precursors to substrate processing chambers
US6720027B2 (en) * 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7105065B2 (en) * 2002-04-25 2006-09-12 Micron Technology, Inc. Metal layer forming methods and capacitor electrode forming methods
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6896730B2 (en) * 2002-06-05 2005-05-24 Micron Technology, Inc. Atomic layer deposition apparatus and methods
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6897106B2 (en) * 2002-08-16 2005-05-24 Samsung Electronics Co., Ltd. Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same
KR100450681B1 (en) * 2002-08-16 2004-10-02 삼성전자주식회사 Capacitor of semiconductor memory device and manufacturing method thereof
US7199023B2 (en) 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US20040065255A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US6916374B2 (en) * 2002-10-08 2005-07-12 Micron Technology, Inc. Atomic layer deposition methods and atomic layer deposition tools
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
JP2007523994A (en) * 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド Atomic layer deposition of barrier materials
DE10330535A1 (en) * 2003-07-07 2005-02-03 Forschungszentrum Jülich GmbH Production of a layer made from ferroelectric material used in the production of a ferroelectric capacitor comprises roughening a ferroelectric material layer on a surface and applying an electrode to the roughened surface
US7440255B2 (en) * 2003-07-21 2008-10-21 Micron Technology, Inc. Capacitor constructions and methods of forming
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) * 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) * 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7067438B2 (en) * 2004-02-19 2006-06-27 Micron Technology, Inc. Atomic layer deposition method of forming an oxide comprising layer on a substrate
US7199001B2 (en) * 2004-03-29 2007-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming MIM capacitor electrodes
US20050249873A1 (en) * 2004-05-05 2005-11-10 Demetrius Sarigiannis Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7170174B2 (en) * 2004-08-24 2007-01-30 Micron Technology, Inc. Contact structure and contact liner process
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US20060165873A1 (en) * 2005-01-25 2006-07-27 Micron Technology, Inc. Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
US20060237138A1 (en) * 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US20060261441A1 (en) * 2005-05-23 2006-11-23 Micron Technology, Inc. Process for forming a low carbon, low resistance metal film during the manufacture of a semiconductor device and systems including same
CN100364048C (en) * 2005-07-07 2008-01-23 友达光电股份有限公司 Manufacturing method of metal/insulation layer/metal structure
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
KR101019293B1 (en) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 Apparatus and process for plasma-enhanced atomic layer deposition
US20070134861A1 (en) * 2005-12-14 2007-06-14 Jin-Ping Han Semiconductor devices and methods of manufacture thereof
KR100823034B1 (en) * 2005-12-29 2008-04-17 동부일렉트로닉스 주식회사 Capacitor in semiconductor device and manufacturing method thereof
TWI283475B (en) * 2005-12-29 2007-07-01 Ind Tech Res Inst Bottom electrode of a metal-insulator-metal capacitor and method of manufacturing the same
US20070160756A1 (en) * 2006-01-07 2007-07-12 Helmuth Treichel Apparatus and method for the deposition of ruthenium containing films
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
WO2008005892A2 (en) * 2006-06-30 2008-01-10 Applied Materials, Inc. Nanocrystal formation
US7790360B2 (en) 2007-03-05 2010-09-07 Micron Technology, Inc. Methods of forming multiple lines
US8889507B2 (en) * 2007-06-20 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. MIM capacitors with improved reliability
KR101544198B1 (en) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 Method of depositing ruthenium film
JP5608315B2 (en) * 2007-12-03 2014-10-15 ピーエスフォー ルクスコ エスエイアールエル Capacitor electrode and manufacturing method thereof, capacitor
US8012532B2 (en) 2007-12-18 2011-09-06 Micron Technology, Inc. Methods of making crystalline tantalum pentoxide
US20090307026A1 (en) * 2008-06-10 2009-12-10 International Business Machines Corporation Priority-based system for netting available coverage
WO2010088684A2 (en) 2009-02-02 2010-08-05 Space Charge, LLC Capacitor using carbon-based extensions
JP5150534B2 (en) * 2009-03-06 2013-02-20 信越ポリマー株式会社 Coverlay film, method for producing the same, and flexible printed wiring board
US8623733B2 (en) * 2009-04-16 2014-01-07 Novellus Systems, Inc. Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US9159551B2 (en) 2009-07-02 2015-10-13 Micron Technology, Inc. Methods of forming capacitors
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8709948B2 (en) * 2010-03-12 2014-04-29 Novellus Systems, Inc. Tungsten barrier and seed for copper filled TSV
US9129945B2 (en) * 2010-03-24 2015-09-08 Applied Materials, Inc. Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance
US8236645B1 (en) * 2011-02-07 2012-08-07 GlobalFoundries, Inc. Integrated circuits having place-efficient capacitors and methods for fabricating the same
US8524599B2 (en) * 2011-03-17 2013-09-03 Micron Technology, Inc. Methods of forming at least one conductive element and methods of forming a semiconductor structure
WO2013081477A1 (en) 2011-11-30 2013-06-06 Zinniatek Limited A roofing, cladding or siding product, its manufacture and its use as part of a solar energy recovery system
WO2013081478A1 (en) * 2011-11-30 2013-06-06 Zinniatek Limited Photovoltaic systems
WO2013148880A1 (en) 2012-03-27 2013-10-03 Novellus Systems, Inc. Tungsten feature fill
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
KR101990051B1 (en) * 2012-08-31 2019-10-01 에스케이하이닉스 주식회사 Semiconductor device with fluorine free tungsten barrier layer and method for fabricating the same
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
AU2014269204A1 (en) 2013-05-23 2015-12-10 Zinniatek Limited Photovoltaic systems
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
EP3114415B1 (en) 2014-03-07 2023-06-28 Zinniatek Limited Solar thermal roofing system
JP2015228191A (en) * 2014-06-03 2015-12-17 カシオ計算機株式会社 Content output system, content output method, content output program and communication terminal
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
WO2016088026A1 (en) 2014-12-01 2016-06-09 Zinniatek Limited A roofing, cladding or siding product
AU2015356689B2 (en) 2014-12-01 2020-10-15 Zinniatek Limited A roofing, cladding or siding apparatus
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US11227825B2 (en) * 2015-12-21 2022-01-18 Intel Corporation High performance integrated RF passives using dual lithography process
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
AU2017345370B2 (en) 2016-10-17 2023-08-31 Zinniatek Limited A roofing, cladding or siding module or apparatus
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
KR20200032756A (en) 2017-08-14 2020-03-26 램 리써치 코포레이션 Metal filling process for 3D vertical NAND wordlines
WO2019213604A1 (en) 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
US11702840B2 (en) 2018-12-19 2023-07-18 Zinniatek Limited Roofing, cladding or siding module, its manufacture and use
US11101274B2 (en) * 2019-12-05 2021-08-24 Micron Technology, Inc. Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5852307A (en) * 1995-07-28 1998-12-22 Kabushiki Kaisha Toshiba Semiconductor device with capacitor

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US596014A (en) * 1897-12-21 Flexible rotary roll
ZA763680B (en) * 1976-06-21 1978-02-22 Nat Inst Metallurg The separation and purification of ruthenium
US4132569A (en) * 1977-10-25 1979-01-02 Diamond Shamrock Corporation Ruthenium recovery process
JPS6034388B2 (en) * 1980-10-29 1985-08-08 凸版印刷株式会社 Pressure heating sterilization method
US4564702A (en) 1983-04-28 1986-01-14 Standard Oil Company (Indiana) Hydrogenation reactions
US4851895A (en) 1985-05-06 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Metallization for integrated devices
JPS6257610A (en) * 1985-09-04 1987-03-13 Agency Of Ind Science & Technol Separation of aqueous organic matter solution
DE3709066A1 (en) * 1986-03-31 1987-10-01 Toshiba Kawasaki Kk METHOD FOR PRODUCING A THIN METAL FILM BY CHEMICAL EVAPORATION
JPS62256931A (en) * 1986-04-28 1987-11-09 Tanaka Kikinzoku Kogyo Kk Method for recovering ruthenium
JPH0812802B2 (en) 1986-11-14 1996-02-07 株式会社日立製作所 Thick film resistor material for thermal head, thick film resistor for thermal head, and thermal head
JPH02197532A (en) * 1989-01-26 1990-08-06 Tanaka Kikinzoku Kogyo Kk Method for recovering ru from metallic electrode
JPH0321490A (en) * 1989-06-20 1991-01-30 Fuji Photo Film Co Ltd Thermal recording material
CA2103896A1 (en) 1991-02-19 1992-08-20 Barry William Ninham Production of metal and metalloid nitrides
US5068199A (en) 1991-05-06 1991-11-26 Micron Technology, Inc. Method for anodizing a polysilicon layer lower capacitor plate of a DRAM to increase capacitance
US5130885A (en) 1991-07-10 1992-07-14 Micron Technology, Inc. Dram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surface
JP2761685B2 (en) 1991-10-17 1998-06-04 三菱電機株式会社 Method for manufacturing semiconductor device
KR950009740B1 (en) 1991-11-12 1995-08-26 금성일렉트론주식회사 Method of fabricating a memory capacitor and structure thereof
EP0553791A1 (en) 1992-01-31 1993-08-04 Nec Corporation Capacitor electrode for dram and process of fabrication thereof
JP3126510B2 (en) 1992-08-12 2001-01-22 鐘紡株式会社 Super absorbent nonwoven material
US5381302A (en) 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5358889A (en) * 1993-04-29 1994-10-25 Northern Telecom Limited Formation of ruthenium oxide for integrated circuits
US5364813A (en) 1993-09-01 1994-11-15 Industrial Technology Research Institute Stacked DRAM poly plate capacitor
JP2897631B2 (en) 1993-12-28 1999-05-31 日本電気株式会社 Semiconductor integrated circuit device and manufacturing method
US5696014A (en) 1994-03-11 1997-12-09 Micron Semiconductor, Inc. Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
US5427974A (en) 1994-03-18 1995-06-27 United Microelectronics Corporation Method for forming a capacitor in a DRAM cell using a rough overlayer of tungsten
US5418180A (en) 1994-06-14 1995-05-23 Micron Semiconductor, Inc. Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon
KR960019696A (en) * 1994-11-23 1996-06-17 김광호 Capacitor Structure and Manufacturing Method Thereof
KR0155785B1 (en) 1994-12-15 1998-10-15 김광호 Fin capacitor & its fabrication method
US5654222A (en) 1995-05-17 1997-08-05 Micron Technology, Inc. Method for forming a capacitor with electrically interconnected construction
US5877063A (en) 1995-07-17 1999-03-02 Micron Technology, Inc. Method of forming rough polysilicon surfaces
KR100224654B1 (en) 1995-09-19 1999-10-15 윤종용 Capacitor fabrication method of semiconductor device
US5639685A (en) 1995-10-06 1997-06-17 Micron Technology, Inc. Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon
US5612560A (en) 1995-10-31 1997-03-18 Northern Telecom Limited Electrode structure for ferroelectric capacitors for integrated circuits
US5688550A (en) 1995-12-15 1997-11-18 Micron Technology, Inc. Method of forming polysilicon having a desired surface roughness
KR100228760B1 (en) 1995-12-20 1999-11-01 김영환 Capacitor fabrication method of semiconductor device
US5930584A (en) 1996-04-10 1999-07-27 United Microelectronics Corp. Process for fabricating low leakage current electrode for LPCVD titanium oxide films
KR100230361B1 (en) 1996-06-25 1999-11-15 윤종용 Uneven metal film and method for fabricating capacitor using this
US5923999A (en) 1996-10-29 1999-07-13 International Business Machines Corporation Method of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet device
JP3512959B2 (en) * 1996-11-14 2004-03-31 株式会社東芝 Semiconductor device and manufacturing method thereof
US5926360A (en) 1996-12-11 1999-07-20 International Business Machines Corporation Metallized oxide structure and fabrication
GB2324408A (en) 1997-01-21 1998-10-21 United Microelectronics Corporation Forming DRAM cells
JPH10209392A (en) * 1997-01-22 1998-08-07 Sony Corp Capacitor for semiconductor memory cell and its electrode and their manufacture
US6364813B1 (en) * 1997-04-16 2002-04-02 Transmisiones Tsp, S.A. De C.V. Method and apparatus for operating a clutch in an automated mechanical transmission
US5893731A (en) 1997-05-23 1999-04-13 Industrial Technology Research Institute Method for fabricating low cost integrated resistor capacitor combinations
US6146961A (en) 1997-06-23 2000-11-14 Micron Technology, Inc. Processing methods of forming a capacitor
US6309713B1 (en) 1997-06-30 2001-10-30 Applied Materials, Inc. Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
US5963458A (en) * 1997-07-29 1999-10-05 Siemens Building Technologies, Inc. Digital controller for a cooling and heating plant having near-optimal global set point control strategy
JP3419665B2 (en) * 1997-10-27 2003-06-23 沖電気工業株式会社 Method for manufacturing semiconductor device
JP3169866B2 (en) 1997-11-04 2001-05-28 日本電気株式会社 Thin film capacitor and method of manufacturing the same
TW411615B (en) 1997-12-04 2000-11-11 Fujitsu Ltd Semiconductor device and method of manufacturing the same
JPH11224938A (en) * 1997-12-04 1999-08-17 Fujitsu Ltd Semiconductor device and fabrication thereof
US6344413B1 (en) * 1997-12-22 2002-02-05 Motorola Inc. Method for forming a semiconductor device
US6060351A (en) 1997-12-24 2000-05-09 Micron Technology, Inc. Process for forming capacitor over bit line memory cell
US6060367A (en) 1998-04-14 2000-05-09 United Semiconductor Circuit Corp. Method of forming capacitors
KR100269331B1 (en) * 1998-07-06 2000-10-16 윤종용 Method for forming a capacitor with dielectric film having high dielectric constant
US6037220A (en) 1998-07-24 2000-03-14 Vanguard International Semiconductor Corporation Method of increasing the surface area of a DRAM capacitor structure via the use of hemispherical grained polysilicon
US6204203B1 (en) 1998-10-14 2001-03-20 Applied Materials, Inc. Post deposition treatment of dielectric films for interface control
US6409904B1 (en) 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
US6294836B1 (en) 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
US6294807B1 (en) 1999-02-26 2001-09-25 Agere Systems Guardian Corp. Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers
US6436786B1 (en) * 1999-05-14 2002-08-20 Matsushita Electronics Corporation Method for fabricating a semiconductor device
US6458183B1 (en) * 1999-09-07 2002-10-01 Colonial Metals, Inc. Method for purifying ruthenium and related processes
US6285038B1 (en) 2000-03-01 2001-09-04 Micron Technology, Inc. Integrated circuitry and DRAM integrated circuitry

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5852307A (en) * 1995-07-28 1998-12-22 Kabushiki Kaisha Toshiba Semiconductor device with capacitor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KAGA Y ET AL: "THERMAL STABILITY OF RUO2 THIN FILMS AND EFFECTS OF ANNEALING AMBIENT ON THEIR REDUCTION PROCESS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 38, no. 6A, June 1999 (1999-06-01), pages 3689 - 3692, XP000883344, ISSN: 0021-4922 *
MATSUI Y ET AL: "THERMAL STABILITY OF A RUO2 ELECTRODE PREPARED BY DC REACTIVE SPUTTERING", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 39, no. 1, PART 1, January 2000 (2000-01-01), pages 256 - 263, XP001017786, ISSN: 0021-4922 *
YOSHIO HAYASHIDE ET AL: "FABRICATION OF STORAGE CAPACITANCE-ENHANCED CAPACITORS WITH A ROUGH ELECTRODE", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, 1990, pages 869 - 872, XP000178146, ISSN: 0021-4922 *

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