WO2001097226A3 - Semiconductor memory having segmented row repair - Google Patents

Semiconductor memory having segmented row repair Download PDF

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Publication number
WO2001097226A3
WO2001097226A3 PCT/US2001/018388 US0118388W WO0197226A3 WO 2001097226 A3 WO2001097226 A3 WO 2001097226A3 US 0118388 W US0118388 W US 0118388W WO 0197226 A3 WO0197226 A3 WO 0197226A3
Authority
WO
WIPO (PCT)
Prior art keywords
redundant
row
memory device
segmented
repair
Prior art date
Application number
PCT/US2001/018388
Other languages
French (fr)
Other versions
WO2001097226A2 (en
Inventor
Brent Keeth
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to DE60138283T priority Critical patent/DE60138283D1/en
Priority to KR1020027017053A priority patent/KR100595813B1/en
Priority to JP2002511339A priority patent/JP2004503897A/en
Priority to AU2001275334A priority patent/AU2001275334A1/en
Priority to EP01942036A priority patent/EP1292952B8/en
Publication of WO2001097226A2 publication Critical patent/WO2001097226A2/en
Publication of WO2001097226A3 publication Critical patent/WO2001097226A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Abstract

A memory device having a segmented row repair architecture that provides the benefits of single bit repair, thereby efficiently utilizing redundant rows of the memory device, is disclosed. The rows of a memory device are segmented into four segments and segmented row repair is provided by selectively disabling a wordline driver for only one segment of the primary row in which a defective memory cell is located and enabling a redundant wordline driver with a redundant term signal provided by the redundancy matching circuit, thereby substituting a redundant row segment for only a specific segment of the entire row length. By selectively disabling only the wordline driver associated with the defective memory cell and dividing the primary and redundant rows into four segments, localized or single bit repair can be performed, thereby efficiently utilizing the redundant rows of the memory device.
PCT/US2001/018388 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair WO2001097226A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE60138283T DE60138283D1 (en) 2000-06-14 2001-06-07 SEMICONDUCTOR MEMORY WITH SEGMENTED RARE REPAIR
KR1020027017053A KR100595813B1 (en) 2000-06-14 2001-06-07 Semiconductor memory, memory device, memory circuit and processor system having segmented row repair and method for repairing out a defective memory cell
JP2002511339A JP2004503897A (en) 2000-06-14 2001-06-07 Semiconductor memory with segmented line repair
AU2001275334A AU2001275334A1 (en) 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair
EP01942036A EP1292952B8 (en) 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/594,442 US6314030B1 (en) 2000-06-14 2000-06-14 Semiconductor memory having segmented row repair
US09/594,442 2000-06-14

Publications (2)

Publication Number Publication Date
WO2001097226A2 WO2001097226A2 (en) 2001-12-20
WO2001097226A3 true WO2001097226A3 (en) 2002-05-10

Family

ID=24378869

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/018388 WO2001097226A2 (en) 2000-06-14 2001-06-07 Semiconductor memory having segmented row repair

Country Status (10)

Country Link
US (2) US6314030B1 (en)
EP (2) EP1292952B8 (en)
JP (1) JP2004503897A (en)
KR (1) KR100595813B1 (en)
CN (2) CN100442434C (en)
AT (1) ATE428175T1 (en)
AU (1) AU2001275334A1 (en)
DE (1) DE60138283D1 (en)
ES (1) ES2325056T3 (en)
WO (1) WO2001097226A2 (en)

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US6621751B1 (en) 2002-06-04 2003-09-16 Micron Technology, Inc. Method and apparatus for programming row redundancy fuses so decoding matches internal pattern of a memory array
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US7061815B2 (en) * 2003-08-05 2006-06-13 Stmicroelectronics Pvt. Ltd. Semiconductor memory device providing redundancy
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US20080291760A1 (en) * 2007-05-23 2008-11-27 Micron Technology, Inc. Sub-array architecture memory devices and related systems and methods
US7885128B2 (en) * 2008-10-21 2011-02-08 Micron Technology, Inc. Redundant memory array for replacing memory sections of main memory
US8331126B2 (en) 2010-06-28 2012-12-11 Qualcomm Incorporated Non-volatile memory with split write and read bitlines
CN102456414B (en) * 2010-10-20 2014-11-26 旺宏电子股份有限公司 Memory storage with backup row and restoration method thereof
JP6083576B2 (en) 2011-12-23 2017-02-22 インテル・コーポレーション Memory device, method and system
CN105513647A (en) * 2011-12-23 2016-04-20 英特尔公司 Self-repair logic for stacked storage device structure
TWI497517B (en) * 2012-11-02 2015-08-21 Elite Semiconductor Esmt Repairing circuit for memory circuit and method thereof and memory circuit using the same
US9601189B2 (en) * 2013-04-24 2017-03-21 Hewlett Packard Enterprise Development Lp Representing data using a group of multilevel memory cells
KR102204390B1 (en) 2014-09-12 2021-01-18 삼성전자주식회사 Memory device with fast fail cell repair
KR20160120006A (en) * 2015-04-07 2016-10-17 에스케이하이닉스 주식회사 Semiconductor memory device
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11177010B1 (en) 2020-07-13 2021-11-16 Qualcomm Incorporated Bitcell for data redundancy
US11114181B1 (en) * 2020-08-03 2021-09-07 Micron Technology, Inc. Memory devices with redundant memory cells for replacing defective memory cells, and related systems and methods

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US5528539A (en) * 1994-09-29 1996-06-18 Micron Semiconductor, Inc. High speed global row redundancy system
US6005813A (en) * 1997-11-12 1999-12-21 Micron Technology, Inc. Device and method for repairing a semiconductor memory
US6011735A (en) * 1998-05-27 2000-01-04 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device with redundancy determination unit that can set replacement of redundant memory array provided in row and column directions

Also Published As

Publication number Publication date
WO2001097226A2 (en) 2001-12-20
EP1292952B1 (en) 2009-04-08
DE60138283D1 (en) 2009-05-20
CN1636260A (en) 2005-07-06
ES2325056T3 (en) 2009-08-25
AU2001275334A1 (en) 2001-12-24
JP2004503897A (en) 2004-02-05
EP2058820A1 (en) 2009-05-13
US6442084B2 (en) 2002-08-27
KR20030009526A (en) 2003-01-29
US20010053101A1 (en) 2001-12-20
US6314030B1 (en) 2001-11-06
EP1292952A2 (en) 2003-03-19
KR100595813B1 (en) 2006-07-03
EP1292952B8 (en) 2009-08-05
CN101471140A (en) 2009-07-01
ATE428175T1 (en) 2009-04-15
CN100442434C (en) 2008-12-10

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