WO2001097258A3 - Fast recovery diode and method for its manufacture - Google Patents

Fast recovery diode and method for its manufacture Download PDF

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Publication number
WO2001097258A3
WO2001097258A3 PCT/US2001/017381 US0117381W WO0197258A3 WO 2001097258 A3 WO2001097258 A3 WO 2001097258A3 US 0117381 W US0117381 W US 0117381W WO 0197258 A3 WO0197258 A3 WO 0197258A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacture
recovery diode
fast recovery
diode
annealed
Prior art date
Application number
PCT/US2001/017381
Other languages
French (fr)
Other versions
WO2001097258A2 (en
Inventor
Richard Francis
Chiu Ng
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Priority to JP2002511367A priority Critical patent/JP2004503933A/en
Priority to AU2001265150A priority patent/AU2001265150A1/en
Priority to DE10196161T priority patent/DE10196161T1/en
Publication of WO2001097258A2 publication Critical patent/WO2001097258A2/en
Publication of WO2001097258A3 publication Critical patent/WO2001097258A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91—Diode arrays, e.g. diode read-only memory array

Abstract

A soft recovery diode is made by first implanting helium into the die (10) to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer (10) and is also annealed. The diode has very soft recovery characteristics without requiring heavy metal doping.
PCT/US2001/017381 2000-06-14 2001-05-30 Fast recovery diode and method for its manufacture WO2001097258A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002511367A JP2004503933A (en) 2000-06-14 2001-05-30 Fast recovery diode and manufacturing method thereof
AU2001265150A AU2001265150A1 (en) 2000-06-14 2001-05-30 Fast recovery diode and method for its manufacture
DE10196161T DE10196161T1 (en) 2000-06-14 2001-05-30 Short recovery diode and process for its manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/593,333 US6261874B1 (en) 2000-06-14 2000-06-14 Fast recovery diode and method for its manufacture
US09/593,333 2000-06-14

Publications (2)

Publication Number Publication Date
WO2001097258A2 WO2001097258A2 (en) 2001-12-20
WO2001097258A3 true WO2001097258A3 (en) 2002-04-25

Family

ID=24374317

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/017381 WO2001097258A2 (en) 2000-06-14 2001-05-30 Fast recovery diode and method for its manufacture

Country Status (5)

Country Link
US (2) US6261874B1 (en)
JP (1) JP2004503933A (en)
AU (1) AU2001265150A1 (en)
DE (1) DE10196161T1 (en)
WO (1) WO2001097258A2 (en)

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US7485920B2 (en) * 2000-06-14 2009-02-03 International Rectifier Corporation Process to create buried heavy metal at selected depth
US6589860B1 (en) * 2001-03-16 2003-07-08 Advanced Micro Devices, Inc. System and method for calibrating electron beam defect inspection tool
EP1396030B1 (en) * 2001-04-11 2011-06-29 Silicon Semiconductor Corporation Vertical power semiconductor device and method of making the same
JP4146645B2 (en) * 2002-01-31 2008-09-10 三菱電機株式会社 Manufacturing method of pn junction diode and pn junction diode
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
EP1635397A1 (en) * 2004-09-14 2006-03-15 STMicroelectronics S.r.l. Integrated high voltage power device having an edge termination of enhanced effectiveness
WO2007075996A2 (en) * 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
US7880166B2 (en) * 2006-05-10 2011-02-01 Ho-Yuan Yu Fast recovery reduced p-n junction rectifier
US8669554B2 (en) 2006-05-10 2014-03-11 Ho-Yuan Yu Fast recovery reduced p-n junction rectifier
JP2008172145A (en) * 2007-01-15 2008-07-24 Toyota Motor Corp Method for manufacturing diode
JP5261324B2 (en) * 2009-08-26 2013-08-14 トヨタ自動車株式会社 Semiconductor device and manufacturing method thereof
ATE529888T1 (en) * 2009-11-09 2011-11-15 Abb Technology Ag FAST DIODE AND METHOD FOR PRODUCING THE SAME
FR2960097A1 (en) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Bidirectional protection component for use in first-conductivity type semiconductor substrate, has metallization layer covering first-conductivity type implanted zone, and isolated trench traversing epitaxy layer
EP2720254B1 (en) * 2011-06-08 2019-04-24 Toyota Jidosha Kabushiki Kaisha Semiconductor device and method for producing same
KR101238232B1 (en) 2011-09-14 2013-03-04 주식회사 시지트로닉스 Structure and fabrication method of mhj-frd
EP2595126B1 (en) * 2011-11-15 2019-03-06 Siemens Schweiz AG Alarm for use in the nuclear field with a heating system for heating semiconductor elements that are not typically radiation resistant to improve functional service life
WO2014030457A1 (en) * 2012-08-22 2014-02-27 富士電機株式会社 Semiconductor device and method for manufacturing semiconductor device
US9123557B2 (en) 2013-11-08 2015-09-01 Sumpro Electronics Corporation Fast recovery rectifier
CN105762198B (en) * 2014-12-18 2019-03-12 江苏宏微科技股份有限公司 Plough groove type fast recovery diode and preparation method thereof
CN108493108B (en) * 2018-05-16 2021-02-09 江苏润奥电子制造股份有限公司 Manufacturing method of high-voltage fast soft recovery diode
CN110660847B (en) * 2018-06-28 2022-04-12 上海先进半导体制造有限公司 Bipolar transistor and method for manufacturing the same
CN108807173B (en) * 2018-07-11 2020-01-24 苏州达亚电子有限公司 Preparation method of fast recovery diode and fast recovery diode

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US5981984A (en) * 1996-10-16 1999-11-09 Fuji Electric Co., Ltd. Insulated gate thyristor
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US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding

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US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding

Also Published As

Publication number Publication date
US6603153B2 (en) 2003-08-05
JP2004503933A (en) 2004-02-05
US6261874B1 (en) 2001-07-17
US20020008246A1 (en) 2002-01-24
DE10196161T1 (en) 2003-05-22
AU2001265150A1 (en) 2001-12-24
WO2001097258A2 (en) 2001-12-20

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