WO2001099153A3 - A negative differential resistance device and method of operating same - Google Patents

A negative differential resistance device and method of operating same Download PDF

Info

Publication number
WO2001099153A3
WO2001099153A3 PCT/US2001/019825 US0119825W WO0199153A3 WO 2001099153 A3 WO2001099153 A3 WO 2001099153A3 US 0119825 W US0119825 W US 0119825W WO 0199153 A3 WO0199153 A3 WO 0199153A3
Authority
WO
WIPO (PCT)
Prior art keywords
drain
negative differential
differential resistance
source
voltage
Prior art date
Application number
PCT/US2001/019825
Other languages
French (fr)
Other versions
WO2001099153A2 (en
Inventor
Tsu-Jae King
David K Y Liu
Original Assignee
Progressant Technologies Inc
Tsu-Jae King
David K Y Liu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/603,102 external-priority patent/US6479862B1/en
Priority claimed from US09/602,658 external-priority patent/US6596617B1/en
Application filed by Progressant Technologies Inc, Tsu-Jae King, David K Y Liu filed Critical Progressant Technologies Inc
Publication of WO2001099153A2 publication Critical patent/WO2001099153A2/en
Publication of WO2001099153A3 publication Critical patent/WO2001099153A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/142—Contactless power supplies, e.g. RF, induction, or IR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Abstract

An n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits negative differential resistance in its output characteristic (drain current as a function of drain voltage) is disclosed. For a fixed gate voltage, the MISFET channel current, which flows between the drain and source terminals of the transistor, increases as the drain-to-source voltage increases above zero Volts. Once the drain-to-source voltage reaches a pre-determined level, the current subsequently decreases with increasing drain-to-source voltage. In this region of operation, the device exhibits negative differential resistance. The resulting MIS device, fabricated by a CMOS process, comprises a gate (110), source and drain (145 and 155), and a dielectric layer (130) having charge traps (130). The device is incorporated into a number of useful applications including memory devices, logic devices, etc.
PCT/US2001/019825 2000-06-22 2001-06-21 A negative differential resistance device and method of operating same WO2001099153A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/603,101 US6512274B1 (en) 2000-06-22 2000-06-22 CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US09/603,102 2000-06-22
US09/602,658 2000-06-22
US09/603,102 US6479862B1 (en) 2000-06-22 2000-06-22 Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US09/603,101 2000-06-22
US09/602,658 US6596617B1 (en) 2000-06-22 2000-06-22 CMOS compatible process for making a tunable negative differential resistance (NDR) device

Publications (2)

Publication Number Publication Date
WO2001099153A2 WO2001099153A2 (en) 2001-12-27
WO2001099153A3 true WO2001099153A3 (en) 2002-07-04

Family

ID=24414099

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/019825 WO2001099153A2 (en) 2000-06-22 2001-06-21 A negative differential resistance device and method of operating same

Country Status (4)

Country Link
US (4) US6512274B1 (en)
EP (1) EP1168456A3 (en)
JP (1) JP2002064203A (en)
WO (1) WO2001099153A2 (en)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6596617B1 (en) * 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
DE10228768A1 (en) * 2001-06-28 2003-01-16 Samsung Electronics Co Ltd Non-volatile floating trap storage device comprises a semiconductor substrate, a tunnel insulation layer on the substrate, a charge storage layer, a barrier insulation layer, and a gate electrode
US8253183B2 (en) 2001-06-28 2012-08-28 Samsung Electronics Co., Ltd. Charge trapping nonvolatile memory devices with a high-K blocking insulation layer
US20060180851A1 (en) * 2001-06-28 2006-08-17 Samsung Electronics Co., Ltd. Non-volatile memory devices and methods of operating the same
US7253467B2 (en) * 2001-06-28 2007-08-07 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices
US7473959B2 (en) * 2001-06-28 2009-01-06 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices and methods of fabricating the same
US7453083B2 (en) 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6933548B1 (en) 2001-12-21 2005-08-23 Synopsys, Inc. Negative differential resistance load element
US7623370B2 (en) * 2002-04-04 2009-11-24 Kabushiki Kaisha Toshiba Resistance change memory device
JP4412903B2 (en) * 2002-06-24 2010-02-10 株式会社ルネサステクノロジ Semiconductor device
US6861707B1 (en) 2002-06-28 2005-03-01 Progressant Technologies, Inc. Negative differential resistance (NDR) memory cell with reduced soft error rate
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6847562B2 (en) 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6897533B1 (en) * 2002-09-18 2005-05-24 Advanced Micro Devices, Inc. Multi-bit silicon nitride charge-trapping non-volatile memory cell
FR2846795A1 (en) 2002-11-05 2004-05-07 St Microelectronics Sa Integrated memory circuit for binary data incorporating a single transistor and with hybrid performance alternating between conventional DRAM and flash memory cells
US6849483B2 (en) 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6806117B2 (en) 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US7012833B2 (en) 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6980467B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6979580B2 (en) 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7005711B2 (en) 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US7088143B2 (en) * 2003-05-22 2006-08-08 The Regents Of The University Of Michigan Dynamic circuits having improved noise tolerance and method for designing same
DE10336876B4 (en) * 2003-08-11 2006-08-24 Infineon Technologies Ag Memory cell with nanocrystals or nanodots and process for their preparation
US20050056827A1 (en) * 2003-09-15 2005-03-17 Agency For Science, Technology And Research CMOS compatible low band offset double barrier resonant tunneling diode
US7195959B1 (en) 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US7592642B1 (en) 2003-09-25 2009-09-22 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device with indium-carbon implant and method of fabrication
US7304327B1 (en) 2003-11-12 2007-12-04 T-Ram Semiconductor, Inc. Thyristor circuit and approach for temperature stability
US7268373B1 (en) 2003-11-12 2007-09-11 T-Ram Semiconductor, Inc. Thyristor-based memory and its method of operation
US20060243316A1 (en) * 2005-04-28 2006-11-02 Cool Shield, Inc. Moldable peltier thermal transfer device and method of manufacturing same
US7573077B1 (en) 2005-05-04 2009-08-11 T-Ram Semiconductor, Inc. Thyristor-based semiconductor memory device with back-gate bias
US8183595B2 (en) 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
US8482035B2 (en) 2005-07-29 2013-07-09 International Rectifier Corporation Enhancement mode III-nitride transistors with single gate Dielectric structure
US7417451B2 (en) 2005-10-07 2008-08-26 Synopsys, Inc. Leakage power management with NDR isolation devices
US7266010B2 (en) * 2005-11-28 2007-09-04 Synopsys, Inc. Compact static memory cell with non-volatile storage capability
KR100879561B1 (en) * 2007-02-22 2009-01-22 삼성전자주식회사 MOBILE circuit which is robust on variation of input voltage
KR101338158B1 (en) * 2007-07-16 2013-12-06 삼성전자주식회사 Non-volatile memory devices and methods of forming the same
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
JP2012004471A (en) * 2010-06-21 2012-01-05 Toshiba Corp Semiconductor device and method of manufacturing the same
EP2878012A4 (en) * 2012-07-27 2016-03-16 Hewlett Packard Development Co Storing memory with negative differential resistance material
IN2013DE03218A (en) 2013-10-31 2015-05-08 Indian Inst Technology Kanpur
KR102216424B1 (en) * 2013-12-18 2021-02-17 인텔 코포레이션 Techniques for improving gate control over transistor channel by increasing effective gate length
US9536886B2 (en) 2015-03-02 2017-01-03 Samsung Electronics Co., Ltd. CMOS compatible resonant interband tunneling cell
CN111668126B (en) * 2019-03-07 2023-04-25 西安电子科技大学 Test structure and characterization method of hot hole effect of compound MISFET device
TW202226592A (en) * 2020-08-31 2022-07-01 美商ＧｅｎｅＳｉＣ 半導體股份有限公司 Design and manufacture of improved power devices
KR20220040536A (en) 2020-09-23 2022-03-31 삼성전자주식회사 Negative differential resistance

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
US5523603A (en) * 1990-04-16 1996-06-04 Digital Equipment Corporation Semiconductor device with reduced time-dependent dielectric failures
US5843812A (en) * 1993-10-28 1998-12-01 Goldstar Electron Co., Ltd. Method of making a PMOSFET in a semiconductor device
US6015739A (en) * 1997-10-29 2000-01-18 Advanced Micro Devices Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588736A (en) 1969-06-30 1971-06-28 Ibm Three-terminal bulk negative resistance device operable in oscillatory and bistable modes
US3805130A (en) * 1970-10-27 1974-04-16 S Yamazaki Semiconductor device
US4047974A (en) 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
DE2619663C3 (en) * 1976-05-04 1982-07-22 Siemens AG, 1000 Berlin und 8000 München Field effect transistor, method of its operation and use as a high-speed switch and in an integrated circuit
US4143393A (en) 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
US5834793A (en) * 1985-12-27 1998-11-10 Kabushiki Kaisha Toshiba Semiconductor devices
FR2600821B1 (en) 1986-06-30 1988-12-30 Thomson Csf HETEROJUNCTION AND DUAL CHANNEL SEMICONDUCTOR DEVICE, ITS APPLICATION TO A FIELD EFFECT TRANSISTOR, AND ITS APPLICATION TO A NEGATIVE TRANSDUCTANCE DEVICE
US4945393A (en) 1988-06-21 1990-07-31 At&T Bell Laboratories Floating gate memory circuit and apparatus
US5021841A (en) 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
EP0380168B1 (en) 1989-01-24 1995-04-26 Laboratoires D'electronique Philips Integrated semiconductor device comprising a field-effect transistor with an isolated gate biased at a high level
US5032891A (en) 1989-05-17 1991-07-16 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
US5162880A (en) 1989-09-27 1992-11-10 Kabushiki Kaisha Toshiba Nonvolatile memory cell having gate insulation film with carrier traps therein
JPH03245504A (en) 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd Magnet for critical magnetic field measuring device
US5093699A (en) 1990-03-12 1992-03-03 Texas A & M University System Gate adjusted resonant tunnel diode device and method of manufacture
JP2773474B2 (en) 1991-08-06 1998-07-09 日本電気株式会社 Semiconductor device
US5357134A (en) 1991-10-31 1994-10-18 Rohm Co., Ltd. Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
US5594121A (en) * 1991-11-07 1997-01-14 Gilead Sciences, Inc. Enhanced triple-helix and double-helix formation with oligomers containing modified purines
EP0549373B1 (en) 1991-12-25 1995-05-17 Nec Corporation Tunnel transistor and method of manufacturing same
JPH05291572A (en) * 1992-04-14 1993-11-05 Fujitsu Ltd Semiconductor element and its manufacture
JPH0661454A (en) 1992-08-10 1994-03-04 Hitachi Ltd Semiconductor integrated circuit device
US5390145A (en) 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory
JP3635683B2 (en) * 1993-10-28 2005-04-06 ソニー株式会社 Field effect transistor
US5606177A (en) 1993-10-29 1997-02-25 Texas Instruments Incorporated Silicon oxide resonant tunneling diode structure
EP0655788B1 (en) * 1993-11-29 1998-01-21 STMicroelectronics S.A. A volatile memory cell
US5477169A (en) 1994-06-20 1995-12-19 Motorola Logic circuit with negative differential resistance device
US5654558A (en) 1994-11-14 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Interband lateral resonant tunneling transistor
US5773996A (en) 1995-05-22 1998-06-30 Nippon Telegraph And Telephone Corporation Multiple-valued logic circuit
JP3397516B2 (en) 1995-06-08 2003-04-14 三菱電機株式会社 Semiconductor storage device and semiconductor integrated circuit device
US5698997A (en) 1995-09-28 1997-12-16 Mayo Foundation For Medical Education And Research Resonant tunneling diode structures for functionally complete low power logic
DE19600422C1 (en) 1996-01-08 1997-08-21 Siemens Ag Electrically programmable memory cell arrangement and method for its production
US5888852A (en) 1996-03-01 1999-03-30 Matsushita Electric Industrial Co., Ltd. Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method
US5936265A (en) 1996-03-25 1999-08-10 Kabushiki Kaisha Toshiba Semiconductor device including a tunnel effect element
JP3508809B2 (en) 1996-04-04 2004-03-22 日本電信電話株式会社 Waveform generation circuit
GB2316533B (en) 1996-08-16 1999-05-26 Toshiba Cambridge Res Center Semiconductor device
US6091077A (en) 1996-10-22 2000-07-18 Matsushita Electric Industrial Co., Ltd. MIS SOI semiconductor device with RTD and/or HET
KR19980034078A (en) 1996-11-05 1998-08-05 양승택 Hot Electron Device and Resonant Tunneling Hot Electronic Device
US5903170A (en) 1997-06-03 1999-05-11 The Regents Of The University Of Michigan Digital logic design using negative differential resistance diodes and field-effect transistors
US5883549A (en) 1997-06-20 1999-03-16 Hughes Electronics Corporation Bipolar junction transistor (BJT)--resonant tunneling diode (RTD) oscillator circuit and method
US5869845A (en) 1997-06-26 1999-02-09 Texas Instruments Incorporated Resonant tunneling memory
US5883829A (en) 1997-06-27 1999-03-16 Texas Instruments Incorporated Memory cell having negative differential resistance devices
US5895934A (en) 1997-08-13 1999-04-20 The United States Of America As Represented By The Secretary Of The Army Negative differential resistance device based on tunneling through microclusters, and method therefor
TW396628B (en) 1997-09-04 2000-07-01 Nat Science Council Structure and process for SiC single crystal/Si single crystal hetero-junction negative differential resistance
US6232643B1 (en) 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
US6301147B1 (en) 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
US6104631A (en) 1997-12-17 2000-08-15 National Scientific Corp. Static memory cell with load circuit using a tunnel diode
US6303942B1 (en) 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6496729B2 (en) * 1998-10-28 2002-12-17 Medtronic, Inc. Power consumption reduction in medical devices employing multiple supply voltages and clock frequency control
ATE327591T1 (en) 1999-01-06 2006-06-15 Raytheon Co METHOD AND SYSTEM FOR QUANTIZING AN ANALOG SIGNAL USING A CLOCKED PAIR OF DIODES WITH A RESONANT TUNNEL EFFECT
US6366134B1 (en) 1999-09-16 2002-04-02 Texas Instruments Incorporated CMOS dynamic logic circuitry using quantum mechanical tunneling structures
EP1107317B1 (en) 1999-12-09 2007-07-25 Hitachi Europe Limited Memory device
EP1111620A3 (en) 1999-12-22 2003-01-08 National University of Ireland, Cork A negative resistance device
US6690030B2 (en) 2000-03-06 2004-02-10 Kabushiki Kaisha Toshiba Semiconductor device with negative differential resistance characteristics
US6294412B1 (en) 2000-06-09 2001-09-25 Advanced Micro Devices Silicon based lateral tunneling memory cell
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
US5523603A (en) * 1990-04-16 1996-06-04 Digital Equipment Corporation Semiconductor device with reduced time-dependent dielectric failures
US5843812A (en) * 1993-10-28 1998-12-01 Goldstar Electron Co., Ltd. Method of making a PMOSFET in a semiconductor device
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
US6015739A (en) * 1997-10-29 2000-01-18 Advanced Micro Devices Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant

Also Published As

Publication number Publication date
JP2002064203A (en) 2002-02-28
US6969894B2 (en) 2005-11-29
US6512274B1 (en) 2003-01-28
EP1168456A2 (en) 2002-01-02
US6686631B1 (en) 2004-02-03
WO2001099153A2 (en) 2001-12-27
US20040145023A1 (en) 2004-07-29
US6972465B2 (en) 2005-12-06
US20040150011A1 (en) 2004-08-05
EP1168456A3 (en) 2003-08-27

Similar Documents

Publication Publication Date Title
WO2001099153A3 (en) A negative differential resistance device and method of operating same
US6559470B2 (en) Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US7408399B2 (en) Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS
US6664601B1 (en) Method of orperating a dual mode FET & logic circuit having negative differential resistance mode
US5132753A (en) Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
KR950034762A (en) High voltage metal oxide semiconductor device and manufacturing method thereof
WO2003021685A1 (en) Semiconductor device and production method thereof
KR960036030A (en) Driver circuit
US6594193B2 (en) Charge pump for negative differential resistance transistor
EP1628337A4 (en) P-channel power mis field effect transistor and switching circuit
EP0944094A3 (en) Flash memory with improved erasability and its circuitry
ATE434267T1 (en) INTEGRATED CIRCUIT WITH CLOSE COUPLED HIGH VOLTAGE OUTPUT AND OFFLINE TRANSISTOR PAIR
KR950030280A (en) MOS channel device counter-doped by ion implantation to reduce substrate sensitivity
TW325599B (en) Semiconductor integrated circuit device
US20040119114A1 (en) N-channel pull-up element & logic circuit
EP1137068A3 (en) Power semiconductor device having a protection circuit
KR940008267A (en) CMOS buffer circuit
EP0948041A3 (en) Insulated gate transistor, a method of manufacturing same, and semiconductor integrated circuit device
US6933548B1 (en) Negative differential resistance load element
EP1128427A3 (en) Manufacturing semiconductor devices
KR960012567A (en) Manufacturing Method of MOS Semiconductor Device and MOS Semiconductor Device
KR970003253A (en) High Voltage Switch Circuit of Semiconductor Memory Device
JPS60160160A (en) Integrated circuit
JPH06232642A (en) Amplifier device
TW200520228A (en) Semiconductor device and its manufacture

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): BR CA CN KR MX RU SG US US US

AK Designated states

Kind code of ref document: A3

Designated state(s): BR CA CN KR MX RU SG US US US

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)