WO2002003472A3 - Aerosol silicon nanoparticles for use in semiconductor device fabrication - Google Patents

Aerosol silicon nanoparticles for use in semiconductor device fabrication Download PDF

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Publication number
WO2002003472A3
WO2002003472A3 PCT/US2001/020827 US0120827W WO0203472A3 WO 2002003472 A3 WO2002003472 A3 WO 2002003472A3 US 0120827 W US0120827 W US 0120827W WO 0203472 A3 WO0203472 A3 WO 0203472A3
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WO
WIPO (PCT)
Prior art keywords
stratum
particles
density
cores
semiconductor
Prior art date
Application number
PCT/US2001/020827
Other languages
French (fr)
Other versions
WO2002003472A2 (en
Inventor
Richard C Flagan
Elizabeth Boer
Michele L Ostraat
Harry A Atwater
Lloyd D Ii Bell
Original Assignee
California Inst Of Techn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn filed Critical California Inst Of Techn
Publication of WO2002003472A2 publication Critical patent/WO2002003472A2/en
Publication of WO2002003472A3 publication Critical patent/WO2002003472A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals

Abstract

A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particles sizes in the nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are crystalline, preferably singel crystalline, and include a density which is approximately the same as the bulk density of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum is characterized by a uniform particle density on the order of 10?12 to 1013¿ particles/cm2. A plurality of adjacent particles contact each other, but the dielectric shells provide electrical isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a density of foreign atom contamination of less that 1011atoms/cm2. The stratum is advantageouly used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volative memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behaviour and long-term non-volatility.
PCT/US2001/020827 2000-06-29 2001-06-29 Aerosol silicon nanoparticles for use in semiconductor device fabrication WO2002003472A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21539000P 2000-06-29 2000-06-29
US21540000P 2000-06-29 2000-06-29
US60/215,400 2000-06-29
US60/215,390 2000-06-29

Publications (2)

Publication Number Publication Date
WO2002003472A2 WO2002003472A2 (en) 2002-01-10
WO2002003472A3 true WO2002003472A3 (en) 2002-04-18

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2001/020827 WO2002003472A2 (en) 2000-06-29 2001-06-29 Aerosol silicon nanoparticles for use in semiconductor device fabrication
PCT/US2001/020829 WO2002003430A2 (en) 2000-06-29 2001-06-29 Aerosol process for fabricating discontinuous floating gate microelectronic devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020829 WO2002003430A2 (en) 2000-06-29 2001-06-29 Aerosol process for fabricating discontinuous floating gate microelectronic devices

Country Status (2)

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US (2) US6723606B2 (en)
WO (2) WO2002003472A2 (en)

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