WO2002007216B1 - Fabrication of electronic circuit elements - Google Patents
Fabrication of electronic circuit elementsInfo
- Publication number
- WO2002007216B1 WO2002007216B1 PCT/US2001/022091 US0122091W WO0207216B1 WO 2002007216 B1 WO2002007216 B1 WO 2002007216B1 US 0122091 W US0122091 W US 0122091W WO 0207216 B1 WO0207216 B1 WO 0207216B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistor
- data line
- electrode
- thin
- silicon layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract 17
- 239000010703 silicon Substances 0.000 claims abstract 17
- 239000010409 thin film Substances 0.000 claims abstract 16
- 238000000034 method Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 239000010408 film Substances 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Abstract
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002222969A AU2002222969A1 (en) | 2000-07-14 | 2001-07-13 | Fabrication of electronic circuit elements |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21849000P | 2000-07-14 | 2000-07-14 | |
US60/218,490 | 2000-07-14 | ||
US09/904,109 | 2001-07-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2002007216A2 WO2002007216A2 (en) | 2002-01-24 |
WO2002007216A3 WO2002007216A3 (en) | 2002-05-10 |
WO2002007216B1 true WO2002007216B1 (en) | 2002-07-25 |
Family
ID=22815333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/022091 WO2002007216A2 (en) | 2000-07-14 | 2001-07-13 | Fabrication of electronic circuit elements |
Country Status (3)
Country | Link |
---|---|
US (2) | US6683333B2 (en) |
AU (1) | AU2002222969A1 (en) |
WO (1) | WO2002007216A2 (en) |
Families Citing this family (248)
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-
2001
- 2001-07-12 US US09/904,109 patent/US6683333B2/en not_active Expired - Fee Related
- 2001-07-12 US US09/904,435 patent/US20020060321A1/en not_active Abandoned
- 2001-07-13 WO PCT/US2001/022091 patent/WO2002007216A2/en active Application Filing
- 2001-07-13 AU AU2002222969A patent/AU2002222969A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US6683333B2 (en) | 2004-01-27 |
US20020106847A1 (en) | 2002-08-08 |
WO2002007216A2 (en) | 2002-01-24 |
AU2002222969A1 (en) | 2002-01-30 |
US20020060321A1 (en) | 2002-05-23 |
WO2002007216A3 (en) | 2002-05-10 |
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