WO2002010721A3 - Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography - Google Patents

Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography Download PDF

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Publication number
WO2002010721A3
WO2002010721A3 PCT/US2001/024216 US0124216W WO0210721A3 WO 2002010721 A3 WO2002010721 A3 WO 2002010721A3 US 0124216 W US0124216 W US 0124216W WO 0210721 A3 WO0210721 A3 WO 0210721A3
Authority
WO
WIPO (PCT)
Prior art keywords
imprint lithography
substrate
methods
orientation sensing
precision gap
Prior art date
Application number
PCT/US2001/024216
Other languages
French (fr)
Other versions
WO2002010721A2 (en
Inventor
Todd Bailey
Byung Jin Choi
Matthew Colburn
S V Sreenivasan
C Grant Willson
John Eckerdt
Original Assignee
Univ Texas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Texas filed Critical Univ Texas
Priority to EP01959423A priority Critical patent/EP1309897A2/en
Priority to KR10-2003-7001463A priority patent/KR20030040378A/en
Priority to AU2001280980A priority patent/AU2001280980A1/en
Priority to JP2002516600A priority patent/JP2004505273A/en
Publication of WO2002010721A2 publication Critical patent/WO2002010721A2/en
Publication of WO2002010721A3 publication Critical patent/WO2002010721A3/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C31/00Handling, e.g. feeding of the material to be shaped, storage of plastics material before moulding; Automation, i.e. automated handling lines in plastics processing plants, e.g. using manipulators or robots
    • B29C31/04Feeding of the material to be moulded, e.g. into a mould cavity
    • B29C31/042Feeding of the material to be moulded, e.g. into a mould cavity using dispensing heads, e.g. extruders, placed over or apart from the moulds
    • B29C31/044Feeding of the material to be moulded, e.g. into a mould cavity using dispensing heads, e.g. extruders, placed over or apart from the moulds with moving heads for distributing liquid or viscous material into the moulds
    • B29C31/045Feeding of the material to be moulded, e.g. into a mould cavity using dispensing heads, e.g. extruders, placed over or apart from the moulds with moving heads for distributing liquid or viscous material into the moulds moving along predetermined circuits or distributing the material according to predetermined patterns
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C31/00Handling, e.g. feeding of the material to be shaped, storage of plastics material before moulding; Automation, i.e. automated handling lines in plastics processing plants, e.g. using manipulators or robots
    • B29C31/04Feeding of the material to be moulded, e.g. into a mould cavity
    • B29C31/042Feeding of the material to be moulded, e.g. into a mould cavity using dispensing heads, e.g. extruders, placed over or apart from the moulds
    • B29C31/047Feeding of the material to be moulded, e.g. into a mould cavity using dispensing heads, e.g. extruders, placed over or apart from the moulds combined with moving moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0888Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C37/00Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
    • B29C37/005Compensating volume or shape change during moulding, in general
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00Producing optical elements, e.g. lenses or prisms
    • B29D11/00009Production of simple or compound lenses
    • B29D11/00038Production of contact lenses
    • B29D11/00125Auxiliary operations, e.g. removing oxygen from the mould, conveying moulds from a storage to the production line in an inert atmosphere
    • B29D11/0023Transferring contact lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C37/00Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
    • B29C2037/90Measuring, controlling or regulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor

Abstract

Described are high precision gap and orientation measurement methods between a template and a substrate used in imprint lithography processes. Gap and orientation measurement methods presented here include uses of broad-band light based measuring techniques.
PCT/US2001/024216 2000-08-01 2001-08-01 Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography WO2002010721A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP01959423A EP1309897A2 (en) 2000-08-01 2001-08-01 Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
KR10-2003-7001463A KR20030040378A (en) 2000-08-01 2001-08-01 Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
AU2001280980A AU2001280980A1 (en) 2000-08-01 2001-08-01 Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
JP2002516600A JP2004505273A (en) 2000-08-01 2001-08-01 Method for highly accurate sensing of gap and orientation between transparent template and substrate for transfer lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22223300P 2000-08-01 2000-08-01
US60/222,233 2000-08-01

Publications (2)

Publication Number Publication Date
WO2002010721A2 WO2002010721A2 (en) 2002-02-07
WO2002010721A3 true WO2002010721A3 (en) 2003-03-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/024216 WO2002010721A2 (en) 2000-08-01 2001-08-01 Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography

Country Status (7)

Country Link
US (1) US6954275B2 (en)
EP (1) EP1309897A2 (en)
JP (1) JP2004505273A (en)
KR (1) KR20030040378A (en)
CN (2) CN1696826A (en)
AU (1) AU2001280980A1 (en)
WO (1) WO2002010721A2 (en)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP1303792B1 (en) * 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
EP2270592B1 (en) 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US20050037143A1 (en) * 2000-07-18 2005-02-17 Chou Stephen Y. Imprint lithography with improved monitoring and control and apparatus therefor
US6632536B2 (en) * 2000-12-28 2003-10-14 International Business Machines Corporation Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US7122296B2 (en) * 2002-03-05 2006-10-17 Brewer Science Inc. Lithography pattern shrink process and articles
DE10217151A1 (en) * 2002-04-17 2003-10-30 Clariant Gmbh Nanoimprint resist
EP1362682A1 (en) * 2002-05-13 2003-11-19 ZBD Displays Ltd, Method and apparatus for liquid crystal alignment
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
AU2003261317A1 (en) * 2002-08-01 2004-02-23 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
ITMI20021961A1 (en) * 2002-09-16 2004-03-17 Consiglio Nazionale Ricerche PROCEDURE FOR THE MANUFACTURE AND CONTROL THROUGH MICRO- AND NANOMETRIC STAIRS MOLDING OF STRUCTURES AND REASONS OF SOLUBLE AND COLLOIDAL SUBSTANCES WITH REDUCTION OF THE DIMENSIONS OF THE REASONS OF THE MOLD.
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7641840B2 (en) * 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
GB0227902D0 (en) * 2002-11-29 2003-01-08 Ingenia Holdings Ltd Template
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7365103B2 (en) * 2002-12-12 2008-04-29 Board Of Regents, The University Of Texas System Compositions for dark-field polymerization and method of using the same for imprint lithography processes
TW200500811A (en) 2002-12-13 2005-01-01 Molecular Imprints Inc Magnification correction employing out-of-plane distortion of a substrate
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
US7483148B1 (en) * 2003-01-31 2009-01-27 J. A. Woollam Co., Inc. Ellipsometric investigation of very thin films
WO2004103666A2 (en) * 2003-05-14 2004-12-02 Molecular Imprints, Inc. Method, system, holder and assembly for transferring templates during imprint lithography processes
DE10330456B9 (en) * 2003-07-05 2007-11-08 Erich Thallner Device for creating a surface structure on a wafer
US7790231B2 (en) * 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
DE10343323A1 (en) * 2003-09-11 2005-04-07 Carl Zeiss Smt Ag Stamp lithography method and device and stamp for the stamp lithograph
RU2240280C1 (en) 2003-10-10 2004-11-20 Ворлд Бизнес Ассошиэйтс Лимитед Method for forming orderly undulating nanostructures (variants)
US7122482B2 (en) 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
KR100974144B1 (en) 2003-12-05 2010-08-04 오브듀캇 아베 Device and method for large area lithography
WO2005057634A1 (en) * 2003-12-11 2005-06-23 Tokyo University Of Agriculture And Technology Tlo Co., Ltd. Pattern-forming process utilizing nanoimprint and apparatus for performing such process
KR100551682B1 (en) * 2004-01-06 2006-02-13 한국기계연구원 A nano imprint lithography system
KR100585951B1 (en) * 2004-02-18 2006-06-01 한국기계연구원 A construction/separation type individually actuating imprinting apparatus
US7019835B2 (en) * 2004-02-19 2006-03-28 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7730834B2 (en) * 2004-03-04 2010-06-08 Asml Netherlands B.V. Printing apparatus and device manufacturing method
DE102004028851B4 (en) * 2004-03-31 2006-04-13 Infineon Technologies Ag Method and device for measuring a surface profile of a sample
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
CN101379435A (en) * 2004-06-03 2009-03-04 得克萨斯州大学系统董事会 System and method for improvement of alignment and overlay for microlithography
US7141275B2 (en) * 2004-06-16 2006-11-28 Hewlett-Packard Development Company, L.P. Imprinting lithography using the liquid/solid transition of metals and their alloys
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
JP3857703B2 (en) * 2004-08-19 2006-12-13 株式会社日本製鋼所 Manufacturing method and manufacturing apparatus of molded body
DE102004043385B3 (en) * 2004-09-08 2006-05-18 Seereal Technologies Gmbh Method and device for replicating finely structured flat optics and optical masks with such structured optics
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7292326B2 (en) * 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US20070231421A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7295288B1 (en) * 2004-12-01 2007-11-13 Advanced Micro Devices, Inc. Systems and methods of imprint lithography with adjustable mask
JP2006165371A (en) 2004-12-09 2006-06-22 Canon Inc Transfer apparatus and device manufacturing method
US7676088B2 (en) * 2004-12-23 2010-03-09 Asml Netherlands B.V. Imprint lithography
US20060144274A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US20060144814A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Imprint lithography
US7686970B2 (en) * 2004-12-30 2010-03-30 Asml Netherlands B.V. Imprint lithography
US7490547B2 (en) * 2004-12-30 2009-02-17 Asml Netherlands B.V. Imprint lithography
US7354698B2 (en) * 2005-01-07 2008-04-08 Asml Netherlands B.V. Imprint lithography
US7922474B2 (en) * 2005-02-17 2011-04-12 Asml Netherlands B.V. Imprint lithography
US7523701B2 (en) * 2005-03-07 2009-04-28 Asml Netherlands B.V. Imprint lithography method and apparatus
US7604690B2 (en) * 2005-04-05 2009-10-20 Wostec, Inc. Composite material for ultra thin membranes
US7762186B2 (en) 2005-04-19 2010-07-27 Asml Netherlands B.V. Imprint lithography
US7611348B2 (en) * 2005-04-19 2009-11-03 Asml Netherlands B.V. Imprint lithography
US7442029B2 (en) 2005-05-16 2008-10-28 Asml Netherlands B.V. Imprint lithography
US7708924B2 (en) * 2005-07-21 2010-05-04 Asml Netherlands B.V. Imprint lithography
JP4515413B2 (en) * 2005-05-27 2010-07-28 エーエスエムエル ネザーランズ ビー.ブイ. Imprint lithography
US7692771B2 (en) * 2005-05-27 2010-04-06 Asml Netherlands B.V. Imprint lithography
US20060267231A1 (en) * 2005-05-27 2006-11-30 Asml Netherlands B.V. Imprint lithography
US7418902B2 (en) * 2005-05-31 2008-09-02 Asml Netherlands B.V. Imprint lithography including alignment
US7377764B2 (en) * 2005-06-13 2008-05-27 Asml Netherlands B.V. Imprint lithography
US20070023976A1 (en) * 2005-07-26 2007-02-01 Asml Netherlands B.V. Imprint lithography
US8011915B2 (en) 2005-11-04 2011-09-06 Asml Netherlands B.V. Imprint lithography
US7878791B2 (en) * 2005-11-04 2011-02-01 Asml Netherlands B.V. Imprint lithography
ATE510241T1 (en) * 2005-12-08 2011-06-15 Molecular Imprints Inc METHOD FOR EXPECTING GAS BETWEEN A SUBSTRATE AND A MOLD
EP1970841A4 (en) * 2005-12-19 2010-04-28 Internat Frontier Technology Ltd Card which can be authenticated by hologram chip
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US7517211B2 (en) * 2005-12-21 2009-04-14 Asml Netherlands B.V. Imprint lithography
US20070178666A1 (en) * 2006-01-31 2007-08-02 Stats Chippac Ltd. Integrated circuit system with waferscale spacer system
US7414310B2 (en) * 2006-02-02 2008-08-19 Stats Chippac Ltd. Waferscale package system
ATE513625T1 (en) * 2006-04-03 2011-07-15 Molecular Imprints Inc LITHOGRAPH PRINTING SYSTEM
US8850980B2 (en) * 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
JP4830170B2 (en) * 2006-05-15 2011-12-07 学校法人早稲田大学 Transfer device
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US8015939B2 (en) 2006-06-30 2011-09-13 Asml Netherlands B.V. Imprintable medium dispenser
US8318253B2 (en) * 2006-06-30 2012-11-27 Asml Netherlands B.V. Imprint lithography
JP5027468B2 (en) * 2006-09-15 2012-09-19 日本ミクロコーティング株式会社 Probe cleaning or probe processing sheet and probe processing method
US7612882B2 (en) * 2006-10-20 2009-11-03 Hewlett-Packard Development Company, L.P. Optical gratings, lithography tools including such optical gratings and methods for using same for alignment
JP4878264B2 (en) * 2006-11-02 2012-02-15 キヤノン株式会社 Inspection method, inspection apparatus, and imprint apparatus
US7775785B2 (en) * 2006-12-20 2010-08-17 Brewer Science Inc. Contact planarization apparatus
US9573319B2 (en) * 2007-02-06 2017-02-21 Canon Kabushiki Kaisha Imprinting method and process for producing a member in which a mold contacts a pattern forming layer
US7454307B2 (en) * 2007-04-05 2008-11-18 United Microelectronics Corp. Method and system for detecting tilt or shift of wafer transferred onto hot plate in real time, and method system for monitoring baking process of wafers in real time
KR100931603B1 (en) * 2007-05-10 2009-12-14 주식회사 에이디피엔지니어링 Imprint process system and pattern formation method
US7837907B2 (en) * 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
US20090038636A1 (en) * 2007-08-09 2009-02-12 Asml Netherlands B.V. Cleaning method
US7854877B2 (en) 2007-08-14 2010-12-21 Asml Netherlands B.V. Lithography meandering order
US8144309B2 (en) 2007-09-05 2012-03-27 Asml Netherlands B.V. Imprint lithography
US20090147237A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Spatial Phase Feature Location
KR100944534B1 (en) * 2007-12-24 2010-03-03 주식회사 에이디피엔지니어링 High Resolution Overlay Alignment Apparatus and Method for Wafer Bumping using Electron Emission Device
US8105736B2 (en) * 2008-03-13 2012-01-31 Miradia Inc. Method and system for overlay correction during photolithography
JP4679620B2 (en) * 2008-09-25 2011-04-27 株式会社東芝 Template inspection method and defect inspection apparatus
US8237133B2 (en) * 2008-10-10 2012-08-07 Molecular Imprints, Inc. Energy sources for curing in an imprint lithography system
US20100096764A1 (en) * 2008-10-20 2010-04-22 Molecular Imprints, Inc. Gas Environment for Imprint Lithography
US8345242B2 (en) * 2008-10-28 2013-01-01 Molecular Imprints, Inc. Optical system for use in stage control
US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
US8231821B2 (en) * 2008-11-04 2012-07-31 Molecular Imprints, Inc. Substrate alignment
JP5377053B2 (en) * 2009-04-17 2013-12-25 株式会社東芝 Template, manufacturing method thereof, and pattern forming method
JP4944158B2 (en) * 2009-06-01 2012-05-30 株式会社日立製作所 Nanoprinting stamper and fine structure transfer method
US20110031650A1 (en) * 2009-08-04 2011-02-10 Molecular Imprints, Inc. Adjacent Field Alignment
JP5809409B2 (en) * 2009-12-17 2015-11-10 キヤノン株式会社 Imprint apparatus and pattern transfer method
JP5581871B2 (en) * 2010-07-22 2014-09-03 大日本印刷株式会社 Imprint method and imprint apparatus
CN107255485B (en) * 2010-09-03 2020-12-22 Ev 集团 E·索尔纳有限责任公司 Apparatus and method for reducing wedge error
KR20130006744A (en) * 2011-04-05 2013-01-18 삼성전자주식회사 Method of manufacturing a mask and apparatus for performing the same
WO2013006077A1 (en) 2011-07-06 2013-01-10 Wostec, Inc. Solar cell with nanostructured layer and methods of making and using
RU2569638C2 (en) 2011-08-05 2015-11-27 Востек, Инк. Light-emitting diode with nanostructured layer and methods of manufacturing and usage
JP5535164B2 (en) * 2011-09-22 2014-07-02 株式会社東芝 Imprint method and imprint apparatus
WO2013089578A1 (en) 2011-12-12 2013-06-20 Wostec, Inc. Sers-sensor with nanostructured surface and methods of making and using
WO2013109157A1 (en) 2012-01-18 2013-07-25 Wostec, Inc. Arrangements with pyramidal features having at least one nanostructured surface and methods of making and using
JP5687640B2 (en) * 2012-02-15 2015-03-18 株式会社東芝 Imprint apparatus and imprint method
WO2013141740A1 (en) 2012-03-23 2013-09-26 Wostec, Inc. Sers-sensor with nanostructured layer and methods of making and using
JP5948102B2 (en) * 2012-03-26 2016-07-06 株式会社Screenホールディングス Transfer apparatus and transfer method
WO2014142700A1 (en) 2013-03-13 2014-09-18 Wostec Inc. Polarizer based on a nanowire grid
DE102013207243B4 (en) * 2013-04-22 2019-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. DEVICE AND METHOD FOR PRODUCING A STRUCTURE OF CURABLE MATERIAL BY IMPREGNATION
JP6120678B2 (en) * 2013-05-27 2017-04-26 キヤノン株式会社 Imprint method, imprint apparatus and device manufacturing method
JP6234074B2 (en) * 2013-06-07 2017-11-22 オリンパス株式会社 Semiconductor device, solid-state imaging device, and imaging device
JP6230353B2 (en) * 2013-09-25 2017-11-15 キヤノン株式会社 Manufacturing method of film having pattern shape, manufacturing method of optical component, manufacturing method of circuit board, manufacturing method of electronic device
WO2015199573A1 (en) 2014-06-26 2015-12-30 Wostec, Inc. Wavelike hard nanomask on a topographic feature and methods of making and using
JP2016164977A (en) * 2015-02-27 2016-09-08 キヤノン株式会社 Nanoimprint liquid material, method for manufacturing nanoimprint liquid material, method for manufacturing hardened material pattern, method for manufacturing optical component, method for manufacturing circuit board, and method for manufacturing electronic component
JP6584182B2 (en) * 2015-07-16 2019-10-02 キヤノン株式会社 Imprint apparatus, imprint method, and article manufacturing method
JP2017032308A (en) * 2015-07-29 2017-02-09 三菱重工業株式会社 Gap measurement device and gap control system
JP6685821B2 (en) * 2016-04-25 2020-04-22 キヤノン株式会社 Measuring apparatus, imprint apparatus, article manufacturing method, light quantity determination method, and light quantity adjustment method
WO2018093284A1 (en) 2016-11-18 2018-05-24 Wostec, Inc. Optical memory devices using a silicon wire grid polarizer and methods of making and using
US10969680B2 (en) * 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template
WO2018156042A1 (en) 2017-02-27 2018-08-30 Wostec, Inc. Nanowire grid polarizer on a curved surface and methods of making and using
CN107871673B (en) * 2017-10-26 2019-09-03 苏州华博电子科技有限公司 A kind of thickness dielectric layer thin-film multilayer package substrate production method
CN108036732B (en) * 2017-11-30 2020-05-26 中国科学院光电技术研究所 Gap detection device based on super-resolution lithography
CN108037647A (en) * 2017-12-18 2018-05-15 中国科学院光电技术研究所 A kind of Proximity stepper real-time leveling system and leveling method
US11249405B2 (en) * 2018-04-30 2022-02-15 Canon Kabushiki Kaisha System and method for improving the performance of a nanoimprint system
NL2023051B1 (en) * 2019-05-02 2020-11-23 Suss Microtec Lithography Gmbh Framework for a replication device, replication device as well as method for producing nanostructured and/or microstructured components by means of a 5 replication device
US11679533B2 (en) 2020-03-12 2023-06-20 Magic Leap, Inc. Methods and apparatuses for casting optical polymer films
EP4172517A1 (en) 2020-06-30 2023-05-03 EV Group E. Thallner GmbH Device and method for aligning substrates
CN116659386B (en) * 2023-08-01 2023-09-29 山东省地质测绘院 Geological fracture surface investigation measuring device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218193A (en) * 1991-02-16 1993-06-08 Sumitomo Heavy Industries Co., Ltd. Double-focus measurement apparatus utilizing chromatic aberration by having first and second bodies illuminated respectively by a single wavelength ray and a ray having a plurality of wavelengths
US5355219A (en) * 1992-12-18 1994-10-11 Matsushita Electric Industrial Co., Ltd. Gap control apparatus and method utilizing heterodyne signal phase difference detection
EP0867775A2 (en) * 1997-03-27 1998-09-30 Ushiodenki Kabushiki Kaisha Proximity exposure device with distance adjustment device
US6088103A (en) * 1995-05-31 2000-07-11 Massachusetts Institute Of Technology Optical interference alignment and gapping apparatus

Family Cites Families (167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783520A (en) 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
US3807027A (en) 1972-03-31 1974-04-30 Johns Manville Method of forming the bell end of a bell and spigot joint
US3807029A (en) 1972-09-05 1974-04-30 Bendix Corp Method of making a flexural pivot
US3811665A (en) 1972-09-05 1974-05-21 Bendix Corp Flexural pivot with diaphragm means
FR2325018A1 (en) * 1975-06-23 1977-04-15 Ibm INTERVAL MEASURING DEVICE FOR DEFINING THE DISTANCE BETWEEN TWO OR MORE FACES
IT1068535B (en) 1975-11-03 1985-03-21 Ibm APPARATUS AND GRAPHIC ELECTROLYTE PROCESS
US4062600A (en) 1976-04-05 1977-12-13 Litton Systems, Inc. Dual-gimbal gyroscope flexure suspension
US4098001A (en) 1976-10-13 1978-07-04 The Charles Stark Draper Laboratory, Inc. Remote center compliance system
US4155169A (en) 1978-03-16 1979-05-22 The Charles Stark Draper Laboratory, Inc. Compliant assembly system device
US4201800A (en) 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
JPS6053675B2 (en) 1978-09-20 1985-11-27 富士写真フイルム株式会社 Spin coating method
US4202107A (en) 1978-10-23 1980-05-13 Watson Paul C Remote axis admittance system
JPS5588332A (en) * 1978-12-26 1980-07-04 Fujitsu Ltd Method of mask alignment
US4208240A (en) 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
US4326805A (en) * 1980-04-11 1982-04-27 Bell Telephone Laboratories, Incorporated Method and apparatus for aligning mask and wafer members
US4337579A (en) 1980-04-16 1982-07-06 The Charles Stark Draper Laboratory, Inc. Deformable remote center compliance device
JPS577931A (en) * 1980-06-18 1982-01-16 Toshiba Corp Method for measuring gap
US4355469A (en) 1980-11-28 1982-10-26 The Charles Stark Draper Laboratory, Inc. Folded remote center compliance device
US4414750A (en) 1981-10-19 1983-11-15 The Charles Stark Draper Laboratory, Inc. Single stage remote center compliance device
DE3377597D1 (en) 1982-04-12 1988-09-08 Nippon Telegraph & Telephone Method for forming micropattern
US4440804A (en) 1982-08-02 1984-04-03 Fairchild Camera & Instrument Corporation Lift-off process for fabricating self-aligned contacts
US4544572A (en) 1982-09-07 1985-10-01 Minnesota Mining And Manufacturing Company Coated ophthalmic lenses and method for coating the same
JPS5972727A (en) 1982-10-19 1984-04-24 Matsushita Electric Ind Co Ltd Positioning table
US4451507A (en) 1982-10-29 1984-05-29 Rca Corporation Automatic liquid dispensing apparatus for spinning surface of uniform thickness
FR2538923A1 (en) * 1982-12-30 1984-07-06 Thomson Csf METHOD AND DEVICE FOR OPTICALLY ALIGNING PATTERNS IN TWO PLANS RECONCILED IN AN EXPOSURE APPARATUS COMPRISING A DIVERGENT RADIATION SOURCE
US4507331A (en) 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
US4512848A (en) 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4552833A (en) 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4694703A (en) 1984-06-28 1987-09-22 Lear Siegler, Inc. Circumferentially oriented flexure suspension
US4908298A (en) 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
EP0228671A1 (en) 1985-12-23 1987-07-15 General Electric Company Method for the production of a coated substrate with controlled surface characteristics
US4657845A (en) 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4692205A (en) 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US4724222A (en) 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface
US4776695A (en) 1986-05-16 1988-10-11 Prometrix Corporation High accuracy film thickness measurement system
US4737425A (en) 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
KR900004269B1 (en) * 1986-06-11 1990-06-18 가부시기가이샤 도시바 Method and device for positioing 1st body and 2nd body
US4929083A (en) 1986-06-19 1990-05-29 Xerox Corporation Focus and overlay characterization and optimization for photolithographic exposure
EP0255303B1 (en) 1986-07-25 1989-10-11 Oki Electric Industry Company, Limited Negative resist material, method for its manufacture and method for using it
JPS6376330A (en) 1986-09-18 1988-04-06 Oki Electric Ind Co Ltd Manufacture of semiconductor device
FR2604553A1 (en) 1986-09-29 1988-04-01 Rhone Poulenc Chimie RIGID POLYMER SUBSTRATE FOR OPTICAL DISC AND OPTICAL DISCS OBTAINED FROM THE SUBSTRATE
US4707218A (en) 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
JPS63138730A (en) * 1986-12-01 1988-06-10 Canon Inc Gap alignment device
US4707611A (en) 1986-12-08 1987-11-17 Rockwell International Corporation Incremental monitoring of thin films
JPS63162132A (en) 1986-12-26 1988-07-05 Nippon Thompson Co Ltd Xy table
US4931351A (en) 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
US6391798B1 (en) * 1987-02-27 2002-05-21 Agere Systems Guardian Corp. Process for planarization a semiconductor substrate
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
US4731155A (en) 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US4808511A (en) 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
KR930000293B1 (en) 1987-10-26 1993-01-15 마쯔시다덴기산교 가부시기가이샤 Fine pattern forming method
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
US4891303A (en) 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
JPH073365B2 (en) 1988-06-08 1995-01-18 大日本クスリーン製造株式会社 Microscopic device
JPH0269936A (en) 1988-07-28 1990-03-08 Siemens Ag Method of making resin structure on semiconductor material
US5108875A (en) 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US4921778A (en) 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
EP0355496A3 (en) * 1988-08-15 1990-10-10 Sumitomo Heavy Industries Co., Ltd. Position detector employing a sector fresnel zone plate
JP2546350B2 (en) * 1988-09-09 1996-10-23 キヤノン株式会社 Alignment device
US5876550A (en) * 1988-10-05 1999-03-02 Helisys, Inc. Laminated object manufacturing apparatus and method
US5171490A (en) 1988-11-29 1992-12-15 Fudim Efrem V Method and apparatus for production of three-dimensional objects by irradiation of photopolymers
US4964945A (en) 1988-12-09 1990-10-23 Minnesota Mining And Manufacturing Company Lift off patterning process on a flexible substrate
US5439766A (en) 1988-12-30 1995-08-08 International Business Machines Corporation Composition for photo imaging
CA2010169A1 (en) 1989-02-21 1990-08-21 Masakazu Uekita Multi-layer resist
US4999280A (en) 1989-03-17 1991-03-12 International Business Machines Corporation Spray silylation of photoresist images
US5169494A (en) 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
JP3001607B2 (en) 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト Dimensionally stable structure transfer method in two-layer method
ES2103261T3 (en) 1989-04-24 1997-09-16 Siemens Ag PROCEDURE FOR THE GENERATION OF CORROSION RESISTANT STRUCTURES.
US5110514A (en) 1989-05-01 1992-05-05 Soane Technologies, Inc. Controlled casting of a shrinkable material
US5053318A (en) 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
CA2011927C (en) 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
US4919748A (en) 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching
JP2704001B2 (en) * 1989-07-18 1998-01-26 キヤノン株式会社 Position detection device
US5151754A (en) * 1989-10-06 1992-09-29 Kabushiki Kaisha Toshiba Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects
US5139925A (en) 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5362606A (en) 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
JP3197010B2 (en) * 1990-03-05 2001-08-13 株式会社東芝 Interval setting method and interval setting device
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
JP2586692B2 (en) 1990-05-24 1997-03-05 松下電器産業株式会社 Pattern forming material and pattern forming method
US5160402A (en) 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
JP2524436B2 (en) 1990-09-18 1996-08-14 インターナショナル・ビジネス・マシーンズ・コーポレイション Surface treatment method
DE4029912A1 (en) 1990-09-21 1992-03-26 Philips Patentverwaltung METHOD FOR FORMING AT LEAST ONE TRENCH IN A SUBSTRATE LAYER
US5314772A (en) 1990-10-09 1994-05-24 Arizona Board Of Regents High resolution, multi-layer resist for microlithography and method therefor
US5126006A (en) 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5072126A (en) 1990-10-31 1991-12-10 International Business Machines Corporation Promixity alignment using polarized illumination and double conjugate projection lens
US5270222A (en) 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5240878A (en) 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
US5212147A (en) 1991-05-15 1993-05-18 Hewlett-Packard Company Method of forming a patterned in-situ high Tc superconductive film
US5421981A (en) 1991-06-26 1995-06-06 Ppg Industries, Inc. Electrochemical sensor storage device
EP0524759A1 (en) 1991-07-23 1993-01-27 AT&T Corp. Device fabrication process
US5242711A (en) 1991-08-16 1993-09-07 Rockwell International Corp. Nucleation control of diamond films by microlithographic patterning
JPH05157521A (en) 1991-08-29 1993-06-22 Nkk Corp Measuring method of ellipso parameter and ellipsometer
US5317386A (en) 1991-09-06 1994-05-31 Eastman Kodak Company Optical monitor for measuring a gap between two rollers
US5877032A (en) * 1995-10-12 1999-03-02 Lucent Technologies Inc. Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
US5263073A (en) 1991-12-20 1993-11-16 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Scanning systems for high resolution E-beam and X-ray lithography
JP3074579B2 (en) * 1992-01-31 2000-08-07 キヤノン株式会社 Position shift correction method
US5204739A (en) 1992-02-07 1993-04-20 Karl Suss America, Inc. Proximity mask alignment using a stored video image
US5244818A (en) 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
JP3157605B2 (en) 1992-04-28 2001-04-16 東京エレクトロン株式会社 Plasma processing equipment
EP0568478A1 (en) 1992-04-29 1993-11-03 International Business Machines Corporation Darkfield alignment system using a confocal spatial filter
US5376810A (en) 1992-06-26 1994-12-27 California Institute Of Technology Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
AU4689293A (en) 1992-07-15 1994-02-14 On-Line Technologies, Inc. Method and apparatus for monitoring layer processing
US5360893A (en) * 1992-07-20 1994-11-01 University Of Colorado Foundation, Inc. DNA sequences encoding proteins used to elicit and detect programmed cell death
US5601641A (en) * 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5431777A (en) 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
TW227628B (en) 1992-12-10 1994-08-01 Samsung Electronics Co Ltd
JPH06183561A (en) * 1992-12-18 1994-07-05 Canon Inc Moving stage device
DE69405451T2 (en) 1993-03-16 1998-03-12 Koninkl Philips Electronics Nv Method and device for producing a structured relief image from cross-linked photoresist on a flat substrate surface
US5386119A (en) 1993-03-25 1995-01-31 Hughes Aircraft Company Apparatus and method for thick wafer measurement
US5348616A (en) 1993-05-03 1994-09-20 Motorola, Inc. Method for patterning a mold
US5380474A (en) 1993-05-20 1995-01-10 Sandia Corporation Methods for patterned deposition on a substrate
US5414514A (en) 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
JP2866559B2 (en) * 1993-09-20 1999-03-08 大日本スクリーン製造株式会社 Film thickness measurement method
US5534101A (en) * 1994-03-02 1996-07-09 Telecommunication Research Laboratories Method and apparatus for making optical components by direct dispensing of curable liquid
KR0157279B1 (en) * 1994-03-15 1999-05-01 모리시타 요이찌 Exposure apparatus for transferring a mask pattern onto a substrate
US5417802A (en) 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
US5453157A (en) 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US5670415A (en) * 1994-05-24 1997-09-23 Depositech, Inc. Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
US5425964A (en) 1994-07-22 1995-06-20 Rockwell International Corporation Deposition of multiple layer thin films using a broadband spectral monitor
JPH08232087A (en) * 1994-12-08 1996-09-10 Sumitomo Metal Ind Ltd Method for detecting end point of etching and etching device
US5458520A (en) 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5743998A (en) * 1995-04-19 1998-04-28 Park Scientific Instruments Process for transferring microminiature patterns using spin-on glass resist media
US6518189B1 (en) * 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US20040036201A1 (en) * 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US5747102A (en) * 1995-11-16 1998-05-05 Nordson Corporation Method and apparatus for dispensing small amounts of liquid material
US5895263A (en) * 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
US6049373A (en) * 1997-02-28 2000-04-11 Sumitomo Heavy Industries, Ltd. Position detection technique applied to proximity exposure
US6033977A (en) * 1997-06-30 2000-03-07 Siemens Aktiengesellschaft Dual damascene structure
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6068783A (en) * 1998-04-28 2000-05-30 Winbond Electronics Corp In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique
US5907782A (en) * 1998-08-15 1999-05-25 Acer Semiconductor Manufacturing Inc. Method of forming a multiple fin-pillar capacitor for a high density dram cell
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6388755B1 (en) * 1998-12-03 2002-05-14 Advanced Optical Technologies, Inc. Wireless position and orientation detecting system
US6565928B2 (en) * 1999-03-08 2003-05-20 Tokyo Electron Limited Film forming method and film forming apparatus
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6569481B1 (en) * 1999-03-29 2003-05-27 The Quaker Oats Company Method for making a puffed food starch product
US6052183A (en) * 1999-04-14 2000-04-18 Winbond Electronics Corp In-situ particle monitoring
US6387783B1 (en) * 1999-04-26 2002-05-14 International Business Machines Corporation Methods of T-gate fabrication using a hybrid resist
US6255022B1 (en) * 1999-06-17 2001-07-03 Taiwan Semiconductor Manufacturing Company Dry development process for a bi-layer resist system utilized to reduce microloading
JP2001143982A (en) * 1999-06-29 2001-05-25 Applied Materials Inc Integrated dimension control for semiconductor device manufacturing
US6383928B1 (en) * 1999-09-02 2002-05-07 Texas Instruments Incorporated Post copper CMP clean
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
DE19958966A1 (en) * 1999-12-07 2001-06-13 Infineon Technologies Ag Generation of resist structures
CA2395760A1 (en) * 1999-12-23 2001-06-28 University Of Massachusetts Methods and apparatus for forming submicron patterns on films
JP3847512B2 (en) * 2000-02-07 2006-11-22 株式会社日立メディコ Magnetic resonance imaging system
US6234379B1 (en) * 2000-02-28 2001-05-22 Nordson Corporation No-flow flux and underfill dispensing methods
EP1303792B1 (en) * 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
US6730256B1 (en) * 2000-08-04 2004-05-04 Massachusetts Institute Of Technology Stereolithographic patterning with interlayer surface modifications
JP2004523906A (en) * 2000-10-12 2004-08-05 ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム Templates for room-temperature and low-pressure micro and nano-transfer lithography
US6517977B2 (en) * 2001-03-28 2003-02-11 Motorola, Inc. Lithographic template and method of formation and use
US6383888B1 (en) * 2001-04-18 2002-05-07 Advanced Micro Devices, Inc. Method and apparatus for selecting wafer alignment marks based on film thickness variation
US6541360B1 (en) * 2001-04-30 2003-04-01 Advanced Micro Devices, Inc. Bi-layer trim etch process to form integrated circuit gate structures
US6534418B1 (en) * 2001-04-30 2003-03-18 Advanced Micro Devices, Inc. Use of silicon containing imaging layer to define sub-resolution gate structures
US6847433B2 (en) * 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
US20030080472A1 (en) * 2001-10-29 2003-05-01 Chou Stephen Y. Lithographic method with bonded release layer for molding small patterns
EP2484751B1 (en) * 2002-04-16 2018-11-28 Princeton University Method of analysing polynucleotides
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218193A (en) * 1991-02-16 1993-06-08 Sumitomo Heavy Industries Co., Ltd. Double-focus measurement apparatus utilizing chromatic aberration by having first and second bodies illuminated respectively by a single wavelength ray and a ray having a plurality of wavelengths
US5355219A (en) * 1992-12-18 1994-10-11 Matsushita Electric Industrial Co., Ltd. Gap control apparatus and method utilizing heterodyne signal phase difference detection
US6088103A (en) * 1995-05-31 2000-07-11 Massachusetts Institute Of Technology Optical interference alignment and gapping apparatus
EP0867775A2 (en) * 1997-03-27 1998-09-30 Ushiodenki Kabushiki Kaisha Proximity exposure device with distance adjustment device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HAISMA J ET AL: "MOLD-ASSISTED NANOLITHOGRAPHY: A PROCESS FOR RELIABLE PATTERN REPLICATION", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 14, no. 6, 1 November 1996 (1996-11-01), pages 4124 - 4128, XP000721137, ISSN: 0734-211X *
NORIO UCHIDA ET AL: "A MASK-TO-WAFER ALIGNMENT AND GAP SETTING METHOD FOR X-RAY LITHOGRAPHY USING GRATINGS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 9, no. 6, 1 November 1991 (1991-11-01), pages 3202 - 3204, XP000268540, ISSN: 0734-211X *
WHITE D L ET AL: "Novel alignment system for imprint lithography", 44TH INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION, RANCHO MIRAGE, CA, USA, 30 MAY-2 JUNE 2000, vol. 18, no. 6, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Nov. 2000, AIP for American Vacuum Soc, USA, pages 3552 - 3556, XP002204287, ISSN: 0734-211X *

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