WO2002015222A3 - Use of pulsed voltage in a plasma reactor - Google Patents

Use of pulsed voltage in a plasma reactor Download PDF

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Publication number
WO2002015222A3
WO2002015222A3 PCT/US2001/025742 US0125742W WO0215222A3 WO 2002015222 A3 WO2002015222 A3 WO 2002015222A3 US 0125742 W US0125742 W US 0125742W WO 0215222 A3 WO0215222 A3 WO 0215222A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma reactor
pulsed voltage
during
eliminate
semiconductor substrate
Prior art date
Application number
PCT/US2001/025742
Other languages
French (fr)
Other versions
WO2002015222A2 (en
Inventor
Kevin G Donohoe
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to KR1020037002281A priority Critical patent/KR100841913B1/en
Priority to DE10196509T priority patent/DE10196509T1/en
Priority to JP2002520262A priority patent/JP2004507080A/en
Priority to AU2001286521A priority patent/AU2001286521A1/en
Priority to GB0301969A priority patent/GB2382459B/en
Publication of WO2002015222A2 publication Critical patent/WO2002015222A2/en
Publication of WO2002015222A3 publication Critical patent/WO2002015222A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources

Abstract

A method and apparatus for providing a positive voltage spike to a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
PCT/US2001/025742 2000-08-17 2001-08-17 Use of pulsed voltage in a plasma reactor WO2002015222A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020037002281A KR100841913B1 (en) 2000-08-17 2001-08-17 Use of pulsed voltage in a plasma reactor
DE10196509T DE10196509T1 (en) 2000-08-17 2001-08-17 Use of pulsed voltage in a plasma reactor
JP2002520262A JP2004507080A (en) 2000-08-17 2001-08-17 How to use pulse voltage in plasma reactor
AU2001286521A AU2001286521A1 (en) 2000-08-17 2001-08-17 Use of pulsed voltage in a plasma reactor
GB0301969A GB2382459B (en) 2000-08-17 2001-08-17 Use of pulsed voltage in a plasma reactor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/640,449 US6544895B1 (en) 2000-08-17 2000-08-17 Methods for use of pulsed voltage in a plasma reactor
US09/640,449 2000-08-17

Publications (2)

Publication Number Publication Date
WO2002015222A2 WO2002015222A2 (en) 2002-02-21
WO2002015222A3 true WO2002015222A3 (en) 2002-06-13

Family

ID=24568283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/025742 WO2002015222A2 (en) 2000-08-17 2001-08-17 Use of pulsed voltage in a plasma reactor

Country Status (8)

Country Link
US (3) US6544895B1 (en)
JP (1) JP2004507080A (en)
KR (1) KR100841913B1 (en)
CN (1) CN100433236C (en)
AU (1) AU2001286521A1 (en)
DE (1) DE10196509T1 (en)
GB (1) GB2382459B (en)
WO (1) WO2002015222A2 (en)

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US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US8658541B2 (en) * 2010-01-15 2014-02-25 Applied Materials, Inc. Method of controlling trench microloading using plasma pulsing
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
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JP6377060B2 (en) 2012-08-28 2018-08-22 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． Wide dynamic range ion energy bias control, fast ion energy switching, ion energy control and pulse bias supply, and virtual front panel
US9210790B2 (en) * 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
CN103343324B (en) * 2013-07-04 2016-04-20 深圳先进技术研究院 Magnetron sputtering equipment
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10927449B2 (en) 2017-01-25 2021-02-23 Applied Materials, Inc. Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment
EP3711081A4 (en) 2017-11-17 2021-09-29 AES Global Holdings, Pte. Ltd. Spatial and temporal control of ion bias voltage for plasma processing
TWI804836B (en) 2017-11-17 2023-06-11 新加坡商Aes 全球公司 Method and system for plasma processing and relevant non-transitory computer-readable medium
CN111788654B (en) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 Improved application of modulated power supply in plasma processing system
JP2022541004A (en) 2019-07-12 2022-09-21 エーイーエス グローバル ホールディングス， プライベート リミテッド Bias supply device with single controlled switch
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
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Also Published As

Publication number Publication date
KR20030031159A (en) 2003-04-18
CN1451172A (en) 2003-10-22
GB0301969D0 (en) 2003-02-26
WO2002015222A2 (en) 2002-02-21
US20030168010A1 (en) 2003-09-11
US20030211754A1 (en) 2003-11-13
DE10196509T1 (en) 2003-07-10
GB2382459B (en) 2004-07-21
AU2001286521A1 (en) 2002-02-25
US7253117B2 (en) 2007-08-07
US6544895B1 (en) 2003-04-08
CN100433236C (en) 2008-11-12
KR100841913B1 (en) 2008-06-30
GB2382459A (en) 2003-05-28
JP2004507080A (en) 2004-03-04

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