WO2002018332A1 - Compose de sel de sulfonium - Google Patents
Compose de sel de sulfonium Download PDFInfo
- Publication number
- WO2002018332A1 WO2002018332A1 PCT/JP2001/005512 JP0105512W WO0218332A1 WO 2002018332 A1 WO2002018332 A1 WO 2002018332A1 JP 0105512 W JP0105512 W JP 0105512W WO 0218332 A1 WO0218332 A1 WO 0218332A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- compound
- composition
- salt compound
- sulfonium salt
- ultrafine patterns
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
- C07C321/24—Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
- C07C321/28—Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
- C07C321/30—Sulfides having the sulfur atom of at least one thio group bound to two carbon atoms of six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C53/00—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen
- C07C53/15—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen containing halogen
- C07C53/19—Acids containing three or more carbon atoms
- C07C53/21—Acids containing three or more carbon atoms containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60133295T DE60133295T2 (de) | 2000-08-30 | 2001-06-27 | Sulphoniumsalz-verbindung |
KR1020037002593A KR100763625B1 (ko) | 2000-08-30 | 2001-06-27 | 술포늄염화합물 |
EP01945637A EP1314725B1 (en) | 2000-08-30 | 2001-06-27 | Sulfonium salt compound |
AU2001267839A AU2001267839A1 (en) | 2000-08-30 | 2001-06-27 | Sulfonium salt compound |
US10/312,572 US6924323B2 (en) | 2000-08-30 | 2001-06-27 | Sulfonium salt compound |
JP2002523450A JP4023318B2 (ja) | 2000-08-30 | 2001-06-27 | スルホニウム塩化合物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000260157 | 2000-08-30 | ||
JP2000-260157 | 2000-08-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002018332A1 true WO2002018332A1 (fr) | 2002-03-07 |
Family
ID=18748210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/005512 WO2002018332A1 (fr) | 2000-08-30 | 2001-06-27 | Compose de sel de sulfonium |
Country Status (8)
Country | Link |
---|---|
US (1) | US6924323B2 (ja) |
EP (1) | EP1314725B1 (ja) |
JP (1) | JP4023318B2 (ja) |
KR (1) | KR100763625B1 (ja) |
CN (1) | CN1297537C (ja) |
AU (1) | AU2001267839A1 (ja) |
DE (1) | DE60133295T2 (ja) |
WO (1) | WO2002018332A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002148790A (ja) * | 2000-09-04 | 2002-05-22 | Fuji Photo Film Co Ltd | 感熱性組成物、それを用いた平版印刷版原版及びスルホニウム塩化合物 |
US7122294B2 (en) | 2003-05-22 | 2006-10-17 | 3M Innovative Properties Company | Photoacid generators with perfluorinated multifunctional anions |
JP2008013551A (ja) * | 2006-06-09 | 2008-01-24 | Sumitomo Chemical Co Ltd | 化学増幅型レジスト組成物の酸発生剤用の塩 |
US7393627B2 (en) | 2004-03-16 | 2008-07-01 | Cornell Research Foundation, Inc. | Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS) |
US7824839B2 (en) | 2006-04-21 | 2010-11-02 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
US8163461B2 (en) | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP2014070020A (ja) * | 2012-09-27 | 2014-04-21 | Sumitomo Seika Chem Co Ltd | トリアリールスルホニウム塩の製造方法 |
US9045398B2 (en) | 2013-05-31 | 2015-06-02 | San-Apro Limited | Sulfonium salt and photo-acid generator |
US9244347B2 (en) | 2013-05-31 | 2016-01-26 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition, compound, polymeric compound and method of forming resist pattern |
JP2020002115A (ja) * | 2018-07-02 | 2020-01-09 | サンアプロ株式会社 | スルホニウム塩の製造方法 |
JPWO2020175495A1 (ja) * | 2019-02-26 | 2021-11-04 | 富士フイルム株式会社 | 塩の製造方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003107707A (ja) * | 2001-09-28 | 2003-04-09 | Clariant (Japan) Kk | 化学増幅型ポジ型感放射線性樹脂組成物 |
JP4121396B2 (ja) * | 2003-03-05 | 2008-07-23 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
CN1802603A (zh) | 2003-07-17 | 2006-07-12 | 霍尼韦尔国际公司 | 用于高级微电子应用的平面化薄膜及其生产装置和方法 |
CN100381421C (zh) * | 2003-10-21 | 2008-04-16 | 和光纯药工业株式会社 | 三芳基锍盐的制造方法 |
US20050148679A1 (en) * | 2003-12-29 | 2005-07-07 | Chingfan Chiu | Aryl sulfonium salt, polymerizable composition and polymerization method of the same |
DE102004058584A1 (de) * | 2004-12-03 | 2006-06-08 | Basf Ag | Strahlungshärtbare Beschichtungsmassen |
US8263306B2 (en) * | 2005-04-21 | 2012-09-11 | Texas Instruments Incorporated | Use of blended solvents in defectivity prevention |
US7521170B2 (en) * | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
EP1748057A1 (en) * | 2005-07-29 | 2007-01-31 | 3M Innovative Properties Company | Sulfonium initiators, process for production and use in cationic polymerizable compositions |
US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
US7390613B1 (en) * | 2006-12-04 | 2008-06-24 | Az Electronic Materials Usa Corp. | Photoactive compounds |
US7491482B2 (en) * | 2006-12-04 | 2009-02-17 | Az Electronic Materials Usa Corp. | Photoactive compounds |
US20080187868A1 (en) * | 2007-02-07 | 2008-08-07 | Munirathna Padmanaban | Photoactive Compounds |
KR100998503B1 (ko) | 2008-10-30 | 2010-12-07 | 금호석유화학 주식회사 | 방향족 환을 포함하는 산 발생제 |
JP5324361B2 (ja) * | 2009-08-28 | 2013-10-23 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
WO2012086850A1 (en) * | 2010-12-24 | 2012-06-28 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition |
US8614047B2 (en) * | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
JP6059675B2 (ja) * | 2014-03-24 | 2017-01-11 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法 |
TWI516520B (zh) | 2014-10-31 | 2016-01-11 | 財團法人工業技術研究院 | 波長轉換聚合物、其製法及包含其之波長轉換裝置 |
JP6583126B2 (ja) * | 2016-04-28 | 2019-10-02 | 信越化学工業株式会社 | 新規カルボン酸オニウム塩、化学増幅レジスト組成物、及びパターン形成方法 |
JP6583136B2 (ja) * | 2016-05-11 | 2019-10-02 | 信越化学工業株式会社 | 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法 |
EP4198019A1 (en) | 2018-10-09 | 2023-06-21 | Changzhou Tronly Advanced Electronic Materials Co., Ltd. | Triphenylphosphonium salt compound, and uses thereof |
JP7149241B2 (ja) * | 2019-08-26 | 2022-10-06 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
KR20220123377A (ko) * | 2019-12-27 | 2022-09-06 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 및 패턴 형성 방법 |
US11681220B2 (en) * | 2020-03-05 | 2023-06-20 | Sumitomo Chemical Company, Limited | Resist composition and method for producing resist pattern |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5156885A (ja) * | 1974-09-18 | 1976-05-18 | Ici Ltd | Hikarijugoseisoseibutsu |
EP0704762A1 (en) * | 1994-09-02 | 1996-04-03 | Wako Pure Chemical Industries Ltd | Resist material and pattern formation |
EP1113005A1 (en) * | 1999-12-27 | 2001-07-04 | Wako Pure Chemical Industries, Ltd. | Sulfonium salt compounds |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4006190A1 (de) * | 1990-02-28 | 1991-08-29 | Hoechst Ag | Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
EP0501919A1 (de) * | 1991-03-01 | 1992-09-02 | Ciba-Geigy Ag | Strahlungsempfindliche Zusammensetzungen auf der Basis von Polyphenolen und Acetalen |
DE59306590D1 (de) * | 1992-12-04 | 1997-07-03 | Ocg Microelectronic Materials | Positiv-Photoresist mit verbesserten Prozesseigenschaften |
JP2956824B2 (ja) * | 1995-06-15 | 1999-10-04 | 東京応化工業株式会社 | ポジ型レジスト膜形成用塗布液 |
US5962180A (en) * | 1996-03-01 | 1999-10-05 | Jsr Corporation | Radiation sensitive composition |
DE69915928T2 (de) * | 1998-05-19 | 2005-04-14 | Jsr Corp. | Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung |
KR100279497B1 (ko) * | 1998-07-16 | 2001-02-01 | 박찬구 | 술포늄 염의 제조방법 |
KR100293266B1 (ko) * | 1999-01-19 | 2001-06-15 | 박찬구 | 술포늄염의 제조방법 |
TWI227377B (en) * | 1999-10-06 | 2005-02-01 | Fuji Photo Film Co Ltd | Positive-type resist composition |
US6727036B2 (en) * | 1999-12-27 | 2004-04-27 | Fuji Photo Film Co., Ltd. | Positive-working radiation-sensitive composition |
JP4070393B2 (ja) * | 2000-01-17 | 2008-04-02 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
TWI224713B (en) * | 2000-01-27 | 2004-12-01 | Fuji Photo Film Co Ltd | Positive photoresist composition |
US6692883B2 (en) * | 2000-04-21 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6660446B2 (en) * | 2000-05-30 | 2003-12-09 | Fuji Photo Film Co., Ltd. | Heat-sensitive composition and planographic printing plate |
EP1179750B1 (en) * | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positive photosensitive composition and method for producing a precision integrated circuit element using the same |
-
2001
- 2001-06-27 DE DE60133295T patent/DE60133295T2/de not_active Expired - Lifetime
- 2001-06-27 WO PCT/JP2001/005512 patent/WO2002018332A1/ja active IP Right Grant
- 2001-06-27 EP EP01945637A patent/EP1314725B1/en not_active Expired - Lifetime
- 2001-06-27 CN CNB018147429A patent/CN1297537C/zh not_active Expired - Lifetime
- 2001-06-27 JP JP2002523450A patent/JP4023318B2/ja not_active Expired - Lifetime
- 2001-06-27 US US10/312,572 patent/US6924323B2/en not_active Expired - Lifetime
- 2001-06-27 KR KR1020037002593A patent/KR100763625B1/ko active IP Right Grant
- 2001-06-27 AU AU2001267839A patent/AU2001267839A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5156885A (ja) * | 1974-09-18 | 1976-05-18 | Ici Ltd | Hikarijugoseisoseibutsu |
EP0704762A1 (en) * | 1994-09-02 | 1996-04-03 | Wako Pure Chemical Industries Ltd | Resist material and pattern formation |
EP1113005A1 (en) * | 1999-12-27 | 2001-07-04 | Wako Pure Chemical Industries, Ltd. | Sulfonium salt compounds |
Non-Patent Citations (1)
Title |
---|
See also references of EP1314725A4 * |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002148790A (ja) * | 2000-09-04 | 2002-05-22 | Fuji Photo Film Co Ltd | 感熱性組成物、それを用いた平版印刷版原版及びスルホニウム塩化合物 |
US7122294B2 (en) | 2003-05-22 | 2006-10-17 | 3M Innovative Properties Company | Photoacid generators with perfluorinated multifunctional anions |
US7393627B2 (en) | 2004-03-16 | 2008-07-01 | Cornell Research Foundation, Inc. | Environmentally friendly photoacid generators (PAGs) with no perfluorooctyl sulfonates (PFOS) |
US8268531B2 (en) | 2006-04-21 | 2012-09-18 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
US7824839B2 (en) | 2006-04-21 | 2010-11-02 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP2008013551A (ja) * | 2006-06-09 | 2008-01-24 | Sumitomo Chemical Co Ltd | 化学増幅型レジスト組成物の酸発生剤用の塩 |
US8163461B2 (en) | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP2014070020A (ja) * | 2012-09-27 | 2014-04-21 | Sumitomo Seika Chem Co Ltd | トリアリールスルホニウム塩の製造方法 |
US9045398B2 (en) | 2013-05-31 | 2015-06-02 | San-Apro Limited | Sulfonium salt and photo-acid generator |
US9244347B2 (en) | 2013-05-31 | 2016-01-26 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition, compound, polymeric compound and method of forming resist pattern |
JP2020002115A (ja) * | 2018-07-02 | 2020-01-09 | サンアプロ株式会社 | スルホニウム塩の製造方法 |
JP7057240B2 (ja) | 2018-07-02 | 2022-04-19 | サンアプロ株式会社 | スルホニウム塩の製造方法 |
JPWO2020175495A1 (ja) * | 2019-02-26 | 2021-11-04 | 富士フイルム株式会社 | 塩の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE60133295D1 (de) | 2008-04-30 |
DE60133295T2 (de) | 2009-04-30 |
CN1297537C (zh) | 2007-01-31 |
EP1314725A1 (en) | 2003-05-28 |
KR20030029837A (ko) | 2003-04-16 |
EP1314725B1 (en) | 2008-03-19 |
JP4023318B2 (ja) | 2007-12-19 |
EP1314725A4 (en) | 2005-06-29 |
KR100763625B1 (ko) | 2007-10-05 |
US6924323B2 (en) | 2005-08-02 |
US20040033434A1 (en) | 2004-02-19 |
CN1449379A (zh) | 2003-10-15 |
AU2001267839A1 (en) | 2002-03-13 |
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