WO2002019408A3 - Method of etching carbon-containing silicon oxide films - Google Patents

Method of etching carbon-containing silicon oxide films Download PDF

Info

Publication number
WO2002019408A3
WO2002019408A3 PCT/US2001/026314 US0126314W WO0219408A3 WO 2002019408 A3 WO2002019408 A3 WO 2002019408A3 US 0126314 W US0126314 W US 0126314W WO 0219408 A3 WO0219408 A3 WO 0219408A3
Authority
WO
WIPO (PCT)
Prior art keywords
carbon
silicon oxide
oxide film
containing silicon
etching
Prior art date
Application number
PCT/US2001/026314
Other languages
French (fr)
Other versions
WO2002019408A2 (en
Inventor
Chang Lin Hsieh
Hui Chen
Jie Yuan
Yan Ye
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2002524207A priority Critical patent/JP2004512673A/en
Priority to EP01964360A priority patent/EP1232522A2/en
Publication of WO2002019408A2 publication Critical patent/WO2002019408A2/en
Publication of WO2002019408A3 publication Critical patent/WO2002019408A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

We have discovered a method for plasma etching a carbon-containing silicon oxide film which provides excellent etch profile control, a rapid etch rate of the carbon/containing silicon oxide film, and high selectivity for etching the carbon-containing silicon oxide film preferentially to an overlying photoresist masking material. Then the method of the inention is used, a highter carbon content in the carbon/containing silicon oxide film results in a faster etch rate, at least up to ta carbon content of 20 atomic percent. In particular, the carbon-containgin silicon oxide film results in a faster etch rate, at least up to a carbon content of 20 atomic percent. In particular, the carbon containg silicon oxide film is plama etched using a plama generated from source gas comprising NH3 and CxFy. It is necessary to achieve the proper balance between the relative amounts of NH3 and CxFy in the plasma source gas in order to provide a balance between etch by/product polymer deposition and removal on various surfaces of the substrate being etched. The NH3 gas functions to 'clean up' deposited polzmer on the photoresist surface, on the etched surface, and on process chamber surfaces. The atomic ratio of carbon: nitrogen in the plasma source gas typically ranges from about 0.3:1 to about 3:1. We have found that C2F6 and C4F8 provide excellent etch rates during etching of carbon-containing silicon oxide films.
PCT/US2001/026314 2000-08-29 2001-08-22 Method of etching carbon-containing silicon oxide films WO2002019408A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002524207A JP2004512673A (en) 2000-08-29 2001-08-22 Method for etching carbon-containing silicon oxide film
EP01964360A EP1232522A2 (en) 2000-08-29 2001-08-22 Method of etching carbon-containing silicon oxide films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/650,975 US6607675B1 (en) 2000-08-29 2000-08-29 Method of etching carbon-containing silicon oxide films
US09/650,975 2000-08-29

Publications (2)

Publication Number Publication Date
WO2002019408A2 WO2002019408A2 (en) 2002-03-07
WO2002019408A3 true WO2002019408A3 (en) 2002-06-13

Family

ID=24611082

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/026314 WO2002019408A2 (en) 2000-08-29 2001-08-22 Method of etching carbon-containing silicon oxide films

Country Status (6)

Country Link
US (1) US6607675B1 (en)
EP (1) EP1232522A2 (en)
JP (1) JP2004512673A (en)
KR (1) KR100856005B1 (en)
TW (1) TW526557B (en)
WO (1) WO2002019408A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3400770B2 (en) * 1999-11-16 2003-04-28 松下電器産業株式会社 Etching method, semiconductor device and manufacturing method thereof
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6905968B2 (en) * 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
JP4681215B2 (en) * 2003-07-31 2011-05-11 株式会社アルバック Dry etching method for low dielectric constant interlayer insulating film
US7256134B2 (en) * 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
EP1646083B1 (en) * 2004-10-08 2016-08-31 Imec Alternative dual damascene patterning approach
US7659206B2 (en) * 2005-01-18 2010-02-09 Applied Materials, Inc. Removal of silicon oxycarbide from substrates
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US7465670B2 (en) * 2005-03-28 2008-12-16 Tokyo Electron Limited Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity
US7393795B2 (en) * 2006-02-01 2008-07-01 Applied Materials, Inc. Methods for post-etch deposition of a dielectric film
KR100788380B1 (en) * 2006-09-29 2008-01-02 동부일렉트로닉스 주식회사 Method for forming semiconductor device
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US7878054B2 (en) * 2007-02-28 2011-02-01 The Boeing Company Barrier coatings for polymeric substrates
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
JP7414593B2 (en) * 2020-03-10 2024-01-16 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280355A (en) * 1989-04-20 1990-11-16 Matsushita Electron Corp Semiconductor device
EP0553961A2 (en) * 1992-01-29 1993-08-04 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
JPH09260350A (en) * 1996-03-19 1997-10-03 Sony Corp Plasma etching method of oxide silicon-based insulating film
WO2000039846A1 (en) * 1998-12-31 2000-07-06 Lam Research Corporation Method of etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
US6114259A (en) * 1999-07-27 2000-09-05 Lsi Logic Corporation Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
JP2001210627A (en) * 1999-11-16 2001-08-03 Matsushita Electric Ind Co Ltd Etching method, semiconductor device and manufacturing method therefor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4427516A (en) * 1981-08-24 1984-01-24 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
JPH09237785A (en) 1995-12-28 1997-09-09 Toshiba Corp Semiconductor device and its manufacture
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
US6340435B1 (en) * 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6251770B1 (en) * 1999-06-30 2001-06-26 Lam Research Corp. Dual-damascene dielectric structures and methods for making the same
US6165891A (en) * 1999-11-22 2000-12-26 Chartered Semiconductor Manufacturing Ltd. Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer
US6350670B1 (en) * 1999-12-17 2002-02-26 Intel Corporation Method for making a semiconductor device having a carbon doped oxide insulating layer
US6284657B1 (en) * 2000-02-25 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Non-metallic barrier formation for copper damascene type interconnects
US6346490B1 (en) * 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
US6368979B1 (en) * 2000-06-28 2002-04-09 Lsi Logic Corporation Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280355A (en) * 1989-04-20 1990-11-16 Matsushita Electron Corp Semiconductor device
EP0553961A2 (en) * 1992-01-29 1993-08-04 Applied Materials, Inc. Reactive ion etch process including hydrogen radicals
JPH09260350A (en) * 1996-03-19 1997-10-03 Sony Corp Plasma etching method of oxide silicon-based insulating film
WO2000039846A1 (en) * 1998-12-31 2000-07-06 Lam Research Corporation Method of etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
US6114259A (en) * 1999-07-27 2000-09-05 Lsi Logic Corporation Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
JP2001210627A (en) * 1999-11-16 2001-08-03 Matsushita Electric Ind Co Ltd Etching method, semiconductor device and manufacturing method therefor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 050 (E - 1030) 6 February 1991 (1991-02-06) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02 30 January 1998 (1998-01-30) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 25 12 April 2001 (2001-04-12) *

Also Published As

Publication number Publication date
TW526557B (en) 2003-04-01
KR20020060957A (en) 2002-07-19
US6607675B1 (en) 2003-08-19
EP1232522A2 (en) 2002-08-21
WO2002019408A2 (en) 2002-03-07
JP2004512673A (en) 2004-04-22
KR100856005B1 (en) 2008-09-02

Similar Documents

Publication Publication Date Title
WO2002019408A3 (en) Method of etching carbon-containing silicon oxide films
US4412119A (en) Method for dry-etching
US5354417A (en) Etching MoSi2 using SF6, HBr and O2
EP1096547A3 (en) Method and apparatus for plasma etching
US4182646A (en) Process of etching with plasma etch gas
EP0822582A3 (en) Method of surface treatment of semiconductor substrates
WO2018048925A1 (en) Method of quasi atomic layer etching
EP0805485A3 (en) Method for plasma etching dielectric layers with high selectivity and low microloading effect
WO2000024046A1 (en) Plasma etching method
WO2001075958A3 (en) Method for improving uniformity and reducing etch rate variation of etching polysilicon
IL167935A (en) Method for plasma etching
AU3866999A (en) Method of forming high aspect ratio apertures
TWI766866B (en) Etching method
WO2003030238A1 (en) Processing method
US5846886A (en) Metal film etching method
EP1042799A1 (en) Hydrofluorocarbon etching compounds with reduced global warming impact
JPH1098029A (en) Processing method for etching anti-reflection organic coating from substrate
US6756314B2 (en) Method for etching a hard mask layer and a metal layer
US7183220B1 (en) Plasma etching methods
EP0825642A2 (en) Plasma process for high photoresist selectivity and improved polymer adhesion
JPH05144779A (en) Dry etching method of silicon oxide film
US7005385B2 (en) Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring
JP2003059907A (en) Method of etching anti-reflection film
EP0199966B1 (en) Method of plasma etching a substrate
JPH0864576A (en) Selective process of using hydrocarbon and hydrogen

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

WWE Wipo information: entry into national phase

Ref document number: 1020027005279

Country of ref document: KR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2001964360

Country of ref document: EP

ENP Entry into the national phase

Ref country code: JP

Ref document number: 2002 524207

Kind code of ref document: A

Format of ref document f/p: F

AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

WWP Wipo information: published in national office

Ref document number: 1020027005279

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2001964360

Country of ref document: EP