WO2002019433A3 - Trench schottky rectifier - Google Patents

Trench schottky rectifier Download PDF

Info

Publication number
WO2002019433A3
WO2002019433A3 PCT/US2001/026954 US0126954W WO0219433A3 WO 2002019433 A3 WO2002019433 A3 WO 2002019433A3 US 0126954 W US0126954 W US 0126954W WO 0219433 A3 WO0219433 A3 WO 0219433A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
adjacent
semiconductor region
trench
semiconductor
Prior art date
Application number
PCT/US2001/026954
Other languages
French (fr)
Other versions
WO2002019433A2 (en
Inventor
Fwu-Iuan Hshieh
Max Chen
Koon Chong So
Yan Man Tsui
Original Assignee
Gen Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Semiconductor Inc filed Critical Gen Semiconductor Inc
Priority to KR1020037002858A priority Critical patent/KR100765924B1/en
Priority to EP01966385A priority patent/EP1314207B1/en
Priority to JP2002524229A priority patent/JP4855636B2/en
Priority to AU2001286905A priority patent/AU2001286905A1/en
Priority to DE60118217T priority patent/DE60118217T2/en
Publication of WO2002019433A2 publication Critical patent/WO2002019433A2/en
Publication of WO2002019433A3 publication Critical patent/WO2002019433A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]

Abstract

A Schottky rectifier is provided. The Schotttky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.
PCT/US2001/026954 2000-08-31 2001-08-29 Trench schottky rectifier WO2002019433A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020037002858A KR100765924B1 (en) 2000-08-31 2001-08-29 Trench schottky rectifier and method of forming the same
EP01966385A EP1314207B1 (en) 2000-08-31 2001-08-29 Trench schottky rectifier
JP2002524229A JP4855636B2 (en) 2000-08-31 2001-08-29 Trench schottky rectifier
AU2001286905A AU2001286905A1 (en) 2000-08-31 2001-08-29 Trench schottky rectifier
DE60118217T DE60118217T2 (en) 2000-08-31 2001-08-29 SCHOTTKY RECTIFIER WITH DIG

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/653,084 US6707127B1 (en) 2000-08-31 2000-08-31 Trench schottky rectifier
US09/653,084 2000-08-31

Publications (2)

Publication Number Publication Date
WO2002019433A2 WO2002019433A2 (en) 2002-03-07
WO2002019433A3 true WO2002019433A3 (en) 2002-12-05

Family

ID=24619436

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/026954 WO2002019433A2 (en) 2000-08-31 2001-08-29 Trench schottky rectifier

Country Status (9)

Country Link
US (2) US6707127B1 (en)
EP (1) EP1314207B1 (en)
JP (1) JP4855636B2 (en)
KR (1) KR100765924B1 (en)
CN (1) CN1286187C (en)
AU (1) AU2001286905A1 (en)
DE (1) DE60118217T2 (en)
TW (1) TW523933B (en)
WO (1) WO2002019433A2 (en)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063443B4 (en) * 2000-12-20 2005-03-03 Infineon Technologies Ag Method for producing an electrode of a field effect controllable semiconductor device and field effect controllable semiconductor device
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7002187B1 (en) * 2003-06-09 2006-02-21 Micrel, Inc. Integrated schottky diode using buried power buss structure and method for making same
US6977208B2 (en) * 2004-01-27 2005-12-20 International Rectifier Corporation Schottky with thick trench bottom and termination oxide and process for manufacture
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
FR2880193A1 (en) * 2004-12-23 2006-06-30 St Microelectronics Sa SCHOTTKY DIODE WITH VERTICAL BARRIER
WO2006085267A2 (en) * 2005-02-08 2006-08-17 Nxp B.V. Semiconductor device with trench field plate
US7948029B2 (en) 2005-02-11 2011-05-24 Alpha And Omega Semiconductor Incorporated MOS device with varying trench depth
US8093651B2 (en) * 2005-02-11 2012-01-10 Alpha & Omega Semiconductor Limited MOS device with integrated schottky diode in active region contact trench
US7285822B2 (en) * 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
US8283723B2 (en) * 2005-02-11 2012-10-09 Alpha & Omega Semiconductor Limited MOS device with low injection diode
US8362547B2 (en) 2005-02-11 2013-01-29 Alpha & Omega Semiconductor Limited MOS device with Schottky barrier controlling layer
US7671439B2 (en) * 2005-02-11 2010-03-02 Alpha & Omega Semiconductor, Ltd. Junction barrier Schottky (JBS) with floating islands
JP2006339508A (en) * 2005-06-03 2006-12-14 Sumitomo Electric Ind Ltd Semiconductor device and its manufacturing method
WO2007075996A2 (en) * 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
US7602036B2 (en) * 2006-03-07 2009-10-13 International Rectifier Corporation Trench type Schottky rectifier with oxide mass in trench bottom
JP2008034572A (en) * 2006-07-28 2008-02-14 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
US8159021B2 (en) * 2008-02-20 2012-04-17 Force-Mos Technology Corporation Trench MOSFET with double epitaxial structure
US7858506B2 (en) 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US7960781B2 (en) 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US7902075B2 (en) 2008-09-08 2011-03-08 Semiconductor Components Industries, L.L.C. Semiconductor trench structure having a sealing plug and method
US9000550B2 (en) 2008-09-08 2015-04-07 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
IT1394649B1 (en) * 2009-06-01 2012-07-05 St Microelectronics Srl PHOTODIODO WITH SCHOTTKY CONTACT ON THE WALLS OF PARALLEL TRINCEE AND ITS MANUFACTURING METHOD
DE102009028248A1 (en) * 2009-08-05 2011-02-10 Robert Bosch Gmbh A semiconductor device
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
JP2011199306A (en) * 2011-06-03 2011-10-06 Sumitomo Electric Ind Ltd Semiconductor device and method of manufacturing the same
CN102222701A (en) * 2011-06-23 2011-10-19 哈尔滨工程大学 Schottky device with groove structure
CN103094100B (en) * 2011-10-28 2015-09-30 比亚迪股份有限公司 A kind of method forming Schottky diode
CN103579368A (en) * 2012-07-18 2014-02-12 朱江 Groove schottky semiconductor device and preparation method thereof
TWI511305B (en) * 2012-11-01 2015-12-01 Chip Integration Tech Co Ltd Method of forming schottky rectifier device
CN103022090A (en) * 2012-12-27 2013-04-03 淄博美林电子有限公司 High-efficiency high-voltage-resistant Schottky chip
CN104124151B (en) * 2014-07-14 2017-08-25 中航（重庆）微电子有限公司 A kind of groove structure Schottky-barrier diode and preparation method thereof
EP3067935A1 (en) * 2015-03-10 2016-09-14 ABB Technology AG Power semiconductor rectifier with controllable on-state voltage
JP7284721B2 (en) * 2020-01-30 2023-05-31 株式会社豊田中央研究所 diode
CN113193053B (en) * 2021-05-20 2023-11-07 电子科技大学 Trench schottky diode with high forward current density
JP2023079551A (en) * 2021-11-29 2023-06-08 Tdk株式会社 schottky barrier diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS562625A (en) * 1979-06-20 1981-01-12 Shindengen Electric Mfg Co Ltd Manufacture of epitaxial wafer
JPS6140841A (en) * 1984-07-31 1986-02-27 Miyazakiken Porous moulded product of glass and its preparation
EP0363552B1 (en) * 1988-07-27 1993-10-13 Tanaka Kikinzoku Kogyo K.K. Process for preparing metal particles
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
US4982260A (en) 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
JP3297060B2 (en) * 1990-09-17 2002-07-02 株式会社東芝 Insulated gate thyristor
JP2555475B2 (en) * 1990-10-16 1996-11-20 工業技術院長 Method for producing inorganic microspheres
JPH05114723A (en) * 1991-03-28 1993-05-07 Murata Mfg Co Ltd Schottky barrier semiconductor device and manufacture thereof
US5262668A (en) 1992-08-13 1993-11-16 North Carolina State University At Raleigh Schottky barrier rectifier including schottky barrier regions of differing barrier heights
JP3173186B2 (en) * 1992-10-08 2001-06-04 株式会社村田製作所 Schottky barrier semiconductor device manufacturing method
US5588983A (en) * 1994-02-16 1996-12-31 Murata Manufacturing Co., Ltd. Production of copper powder
JPH07263717A (en) * 1994-03-23 1995-10-13 Nippon Telegr & Teleph Corp <Ntt> Rectifying element and manufacture thereof
US5609919A (en) * 1994-04-21 1997-03-11 Altamat Inc. Method for producing droplets
US5962893A (en) 1995-04-20 1999-10-05 Kabushiki Kaisha Toshiba Schottky tunneling device
JP3329642B2 (en) * 1995-04-20 2002-09-30 株式会社東芝 Semiconductor device
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
JP3420698B2 (en) * 1998-03-24 2003-06-30 株式会社東芝 Semiconductor device and manufacturing method thereof
JP2001068688A (en) * 1999-08-26 2001-03-16 Fuji Electric Co Ltd Manufacture of schottky barrier diode and schottky barrier diode
EP1151814A4 (en) * 1999-11-12 2006-11-02 Mitsui Mining & Smelting Co Nickel powder and conductive paste
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6420768B1 (en) * 2000-12-15 2002-07-16 General Semiconductor, Inc. Trench schottky barrier rectifier and method of making the same
US6580141B2 (en) * 2001-06-01 2003-06-17 General Semiconductor, Inc. Trench schottky rectifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same

Also Published As

Publication number Publication date
CN1286187C (en) 2006-11-22
US20020066926A1 (en) 2002-06-06
DE60118217T2 (en) 2006-12-28
TW523933B (en) 2003-03-11
JP4855636B2 (en) 2012-01-18
EP1314207A2 (en) 2003-05-28
WO2002019433A2 (en) 2002-03-07
JP2004521480A (en) 2004-07-15
US6707127B1 (en) 2004-03-16
DE60118217D1 (en) 2006-05-11
EP1314207B1 (en) 2006-03-22
US6518152B2 (en) 2003-02-11
AU2001286905A1 (en) 2002-03-13
KR20030038718A (en) 2003-05-16
KR100765924B1 (en) 2007-10-11
CN1498425A (en) 2004-05-19

Similar Documents

Publication Publication Date Title
WO2002019433A3 (en) Trench schottky rectifier
AU7252994A (en) Schottky barrier rectifier with mos trench
US10510863B2 (en) Power device having a polysilicon-filled trench with a tapered oxide thickness
KR100846158B1 (en) An integrated circuit and a method of manufacturing the integrated circuit
CN101553932B (en) Integrated latch-up free insulated gate bipolar transistor
EP1988579A3 (en) Power MOSFET having a trench gate electrode
ATE226760T1 (en) SCHOTTKYBARRIER RECTIFIER
WO2005112128A3 (en) Trench mosfet including buried source electrode and method of fabricating the same
EP1022843A3 (en) High power rectifier
WO2002019432A3 (en) Trench mosfet with structure having low gate charge
CN105280725B (en) A kind of gallium nitride diode and preparation method thereof
EP1239523A3 (en) Power accumulation-mode MOSFET having a trench gate electrode
WO2004036625A3 (en) Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
WO2002027800A3 (en) Trench dmos transistor having lightly doped source structure
WO2002049118A3 (en) Trench schottky barrier rectifier and method of making the same
TWI265633B (en) High voltage power MOSFET having low on-resistance
JPH08213613A (en) Vertical semiconductor device and its manufacturing method
WO2021003806A1 (en) Semiconductor device and manufacturing method therefor
CN205211763U (en) High -voltage schottky diode
US6753588B2 (en) Semiconductor rectifier
CN106158985A (en) A kind of silicon carbide junction barrier schottky diodes and preparation method thereof
CN210245504U (en) Semiconductor device with a plurality of transistors
CN103094100B (en) A kind of method forming Schottky diode
CN215299260U (en) Groove gate type super barrier rectifying device with low conduction voltage drop
CN215644510U (en) Super barrier rectifier device with low conduction voltage drop

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2001966385

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020037002858

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002524229

Country of ref document: JP

Ref document number: 018150403

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020037002858

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2001966385

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWG Wipo information: grant in national office

Ref document number: 2001966385

Country of ref document: EP