WO2002019484A3 - Protective side wall passivation for vcsel chips - Google Patents

Protective side wall passivation for vcsel chips Download PDF

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Publication number
WO2002019484A3
WO2002019484A3 PCT/US2001/026921 US0126921W WO0219484A3 WO 2002019484 A3 WO2002019484 A3 WO 2002019484A3 US 0126921 W US0126921 W US 0126921W WO 0219484 A3 WO0219484 A3 WO 0219484A3
Authority
WO
WIPO (PCT)
Prior art keywords
die
wafer
oxidation
side wall
edges
Prior art date
Application number
PCT/US2001/026921
Other languages
French (fr)
Other versions
WO2002019484A2 (en
Inventor
James C Nohava
Yue Liu
Eva M B Strzelecka
Robert A Morgan
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP01966374A priority Critical patent/EP1334541A2/en
Priority to JP2002524271A priority patent/JP2004535057A/en
Priority to CA002421009A priority patent/CA2421009A1/en
Priority to KR10-2003-7003120A priority patent/KR20040031675A/en
Publication of WO2002019484A2 publication Critical patent/WO2002019484A2/en
Publication of WO2002019484A3 publication Critical patent/WO2002019484A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AIAs and AIGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
PCT/US2001/026921 2000-08-31 2001-08-30 Protective side wall passivation for vcsel chips WO2002019484A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP01966374A EP1334541A2 (en) 2000-08-31 2001-08-30 Protective side wall passivation for vcsel chips
JP2002524271A JP2004535057A (en) 2000-08-31 2001-08-30 Passivation of protective sidewalls for VCSEL chips
CA002421009A CA2421009A1 (en) 2000-08-31 2001-08-30 Protective side wall passivation for vcsel chips
KR10-2003-7003120A KR20040031675A (en) 2000-08-31 2001-08-30 Protective side wall passivation for vcsel chips

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/652,555 US6674777B1 (en) 2000-08-31 2000-08-31 Protective side wall passivation for VCSEL chips
US09/652,555 2000-08-31

Publications (2)

Publication Number Publication Date
WO2002019484A2 WO2002019484A2 (en) 2002-03-07
WO2002019484A3 true WO2002019484A3 (en) 2003-06-12

Family

ID=24617252

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/026921 WO2002019484A2 (en) 2000-08-31 2001-08-30 Protective side wall passivation for vcsel chips

Country Status (7)

Country Link
US (2) US6674777B1 (en)
EP (1) EP1334541A2 (en)
JP (1) JP2004535057A (en)
KR (1) KR20040031675A (en)
CA (1) CA2421009A1 (en)
TW (1) TW544842B (en)
WO (1) WO2002019484A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6862309B2 (en) * 2003-02-06 2005-03-01 Agilent Technologies, Inc. Passivation scheme for oxide vertical cavity surface-emitting laser
DE102004037191B4 (en) 2004-07-30 2008-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Semiconductor device with a passivation layer and method for its production
US20060043278A1 (en) * 2004-08-30 2006-03-02 Honeywell International Inc. VCSEL pin sensor
FR2881876B1 (en) * 2005-02-07 2007-05-25 Centre Nat Rech Scient PLANAR OXIDATION PROCESS FOR REALIZING LOCALIZED BIO INSULATION
US7321117B2 (en) * 2005-09-22 2008-01-22 Honeywell International Inc. Optical particulate sensor in oil quality detection
US7723718B1 (en) * 2005-10-11 2010-05-25 SemiLEDs Optoelectronics Co., Ltd. Epitaxial structure for metal devices
JP5408477B2 (en) * 2008-05-13 2014-02-05 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
JP5748949B2 (en) * 2008-11-20 2015-07-15 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
JP5754624B2 (en) 2010-05-25 2015-07-29 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, image forming apparatus, and method for manufacturing surface emitting laser element
JP5721055B2 (en) * 2010-06-11 2015-05-20 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, image forming apparatus, and method for manufacturing surface emitting laser element
JP5612407B2 (en) * 2010-09-13 2014-10-22 浜松ホトニクス株式会社 Semiconductor light receiving element and method for manufacturing semiconductor light receiving element
TW201411448A (en) * 2012-09-03 2014-03-16 Wintek Corp Touch panel
DE102018003982A1 (en) * 2018-05-17 2019-11-21 3-5 Power Electronics GmbH Semiconductor device manufacturing method and semiconductor device
CN113699488B (en) * 2021-07-26 2023-07-14 湖北光安伦芯片有限公司 Film coating method for semiconductor laser chip cavity surface

Citations (3)

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US5696023A (en) * 1990-12-31 1997-12-09 The Board Of Trustees Of The University Of Illinois Method for making aluminum gallium arsenide semiconductor device with native oxide layer
US5851849A (en) * 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US6048748A (en) * 1999-01-14 2000-04-11 Hewlett-Packard Company Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

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JPH01264285A (en) 1988-04-15 1989-10-20 Omron Tateisi Electron Co Surface light-emitting type semiconductor laser
US4943970A (en) 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4949350A (en) 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5115442A (en) 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5359618A (en) * 1993-06-01 1994-10-25 Motorola, Inc. High efficiency VCSEL and method of fabrication
JPH07111357A (en) * 1993-10-05 1995-04-25 Mitsubishi Electric Corp Manufacture of semiconductor laser
US5583370A (en) 1994-03-04 1996-12-10 Motorola Inc. Tab semiconductor device having die edge protection and method for making the same
US5550081A (en) 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
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Patent Citations (3)

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US5851849A (en) * 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US6048748A (en) * 1999-01-14 2000-04-11 Hewlett-Packard Company Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

Non-Patent Citations (2)

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HUFFAKER D L ET AL: "Sealing AlAs against oxidative decomposition and its use in device fabrication", QELS '96. SUMMARIES OF PAPERS PRESENTED AT THE QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE. VOL.10 1996 TECHNICAL DIGEST SERIES. CONFERENCE EDITION (IEEE CAT. NO.96CH35902), QELS '96. SUMMARIES OF PAPERS PRESENTED AT THE QUANTUM ELECTRONICS AND, 1996, Washington, DC, USA, Opt. Soc. America, USA, pages 83, XP002236166, ISBN: 0-7803-3190-7 *
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Also Published As

Publication number Publication date
EP1334541A2 (en) 2003-08-13
TW544842B (en) 2003-08-01
WO2002019484A2 (en) 2002-03-07
JP2004535057A (en) 2004-11-18
US20030211642A1 (en) 2003-11-13
US6674777B1 (en) 2004-01-06
KR20040031675A (en) 2004-04-13
CA2421009A1 (en) 2002-03-07
US6924161B2 (en) 2005-08-02

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