WO2002023620A2 - Connection for conducting high frequency signal between a circuit and a discrete electrical component - Google Patents
Connection for conducting high frequency signal between a circuit and a discrete electrical component Download PDFInfo
- Publication number
- WO2002023620A2 WO2002023620A2 PCT/US2001/028113 US0128113W WO0223620A2 WO 2002023620 A2 WO2002023620 A2 WO 2002023620A2 US 0128113 W US0128113 W US 0128113W WO 0223620 A2 WO0223620 A2 WO 0223620A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrical
- wire
- circuit
- circuit board
- die
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/665—Bias feed arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4801—Structure
- H01L2224/48011—Length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01031—Gallium [Ga]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
Definitions
- the present invention relates to a connection between a circuit and a discrete electrical component, and more particularly, to a connection for carrying a high frequency signal between a circuit and a discrete electrical component.
- Radio-frequency (RF) communications is developing at a very rapid pace.
- the telephones operated in the relatively low frequency range of 800 MHz to 900 MHz.
- Early cellular telephones and RF communication devices were also very large and bulky.
- Communications technology has made great strides since these original cellular phone were developed and marketed.
- One improvement is the development of communication equipment that transmits at much higher frequencies, which has many advantages.
- One advantage of transmitting at high frequency is that the communication equipment can be made much smaller and cost effective.
- Another advantage is that a high frequency signal can carry more information than a low frequency signal. This advantage is very important as both our society and economy become more dependent on information.
- communication devices are being used more and more to communicate data in addition to voice information. Examples of such devices that need to communicate massive amounts of data include cellular phones that provide wireless Internet access, wireless modems, and wireless network connections.
- the length of the wire required to reach from the top of the die to the trace on the surface of the circuit board is too long for very high frequency signals, especially those signals that have a frequency above 20 GHz.
- One phenomenon that results in degradation of such a signal is the impedance of the wire, which results in an inductance that opposes the flow of electrical current. If the wire is too long, the inductance is too great and results in signal loss and noise. This problem is especially acute in dies that are relatively thick such as dies formed with silicon germanium (SiGe), which is otherwise advantageous because it is a very economical material to use when forming dies.
- Dies formed with SiGe are much thicker than those formed with gallium arsenide (GaAs), which is currently a more common material for forming dies.
- GaAs gallium arsenide
- the thickness of a SiGe die is about 10 mils and the thickness of a GaAs die is only about 2.5 mils. This extra thickness results in longer wires between the die and circuit board and thus more signal loss and noise in high frequency signals.
- the wire gradually slopes down to the trace on the circuit board. Hence the wire becomes analogous to the hypotenuse of a triangle and has a length even longer than the depth of the die, which compounds the problem even more.
- One technique is to flip the die upside down to form a flip chip. The contact point of the die is then placed in direct electrical contact with the trace printed on the circuit board. Another technique is to have a recess or channel formed in the circuit board. The die is then mounted in the recess so that the top of the die is at about the same level as the trace printed on the circuit board.
- the present invention relates to the communication of a high-frequency signal from a die or similar structure to a discrete electrical component.
- One advantage of this invention is that it enables translation of an electrical signal off of a die or similar structure with a reduced distribute inductance of the signal path and hence a reduced degradation of the signal.
- One aspect of the present invention is an apparatus for processing high frequency signals.
- the apparatus comprises an electrical circuit having a top portion and a contact point positioned on the top portion.
- a discrete electrical component also has a top portion and a contact point positioned on the top portion.
- An intermediate signal path extends between the contact point on the top portion of the electrical circuit and the contact point on the top portion of the discrete electrical component.
- An alternative aspect of the present invention comprises a circuit board having a trace.
- An electrical circuit is fabricated on a die, which is mounted on the circuit board.
- the die has a top portion and a contact point is positioned on the top portion.
- the circuit is configured to process a signal having a frequency in the range of about 20 GHz and higher.
- a capacitor is mounted on the circuit board and has a top portion and bottom portion. The bottom portion opposes the trace.
- a wire extends between the contact point on the top portion of the die and the top portion of the capacitor.
- the wire has a length in the range of about 2 mils to about 12 mils.
- Another alternative aspect of the invention comprises a circuit board that includes an electrical circuit and a discrete electrical component.
- a wire extends between the electrical circuit and the discrete electrical component.
- the wire does not have direct contact with the circuit board.
- Yet another aspect of the present invention is a method of manufacturing electronics, the electronics being mounted on a circuit board having a surface. The method comprises mounting an electrical circuit to the circuit board, the electrical circuit having a contact point elevated off the surface of the circuit board; mounting a discrete electrical component on the circuit board, the discrete electrical component having a contact point elevated off the surface of the circuit board; and positioning a conductive path between the contact of the electrical circuit and the discrete electrical component.
- Still another aspect of the present invention is a method of processing a high frequency electrical signal.
- the method comprises conducting the electrical signal through an electrical circuit, the electric circuit being mounted on a circuit board, the electrical signal having a frequency in the range of about 20 GHz and higher; directly conducting the electrical signal from the electrical circuit to a signal path at a contact point physically isolated from the circuit board; and directly conducting the electrical signal from the signal path to a discrete electrical component at a contact point physically isolated from the circuit board.
- Figures 1 A and IB are a partial side view and a partial top view, respectively, of a circuit mounted on printed circuit board and embodying the present invention.
- Figure 2 is a partial side view of and alternative embodiment of the circuit illustrated in Figures 1 A and IB.
- Figures 3-5 are graphs illustrating simulations that demonstrate performance of a circuit that embodies the present invention.
- Figure 6A is a graph illustrating an experiment that demonstrates the performance of a circuit that embodies the present invention.
- Figure 6B illustrates the circuit used in the experiment in which the graph shown in Figure 6A was generated.
- Figure 7 is a circuit diagram of one possible system that embodies the present invention.
- a plurality of signal traces including traces 100a and 100b, are mounted on a circuit board 102.
- a discrete electrical component 104 is mounted on trace 100a, and a die 106 is mounted on the trace
- an intermediate signal path such as a wire 108, provides electrical communication between the discrete electrical component 104 and the die 106.
- the distance d between the die 106 and the discrete electrical component 104 is in the range from about 2 mils to about 12 mils. In another possible embodiment, the distance d is about 3 mils.
- One advantage of minimizing the distance d is that it results in a minimal length of the intermediate signal path 108 and hence minimal degradation of a high frequency signal that is conducted along the intermediate signal path 108.
- the discrete electrical component 104 can be one of several different devices and has a top portion 110 and a bottom portion 112. A first contact pad 114 or point is formed in the top portion 110 of the discrete electrical component 104 and a second contact point (not shown) is formed in the bottom portion 112 of the discrete electrical component. In one possible embodiment, the discrete electrical component 104 is a block capacitor.
- One such capacitor that can be used is a 100 pF capacitor having a part number GH0158101kN6, which is commercially available from ANX Corporation of Myrtle Beach, South Carolina. This capacitor has a thickness T cap of about 7 mils. Although one particular type and size of capacitor is disclosed herein as an exemplary embodiment, other types and dimensions of capacitors can be used.
- An example of another type of electrical components is a conductive member such as a metalized bar for establishing a path from the die to ground and a metalized chip for establishing a path from the die to a trace on the signal path.
- a conductive member such as a metalized bar for establishing a path from the die to ground and a metalized chip for establishing a path from the die to a trace on the signal path.
- Such a structure does not materially contribute to distribute inductance in the signal path because they have a lance conductive area.
- one or more electrical components or a circuit for processing a high-frequency signal are mounted on the die 106.
- the circuit can be configured to process a variety of different analog and digital signals including both high frequency modulated audio and data signals for use with wireless communications.
- An example of such a circuit is a monolithic microwave integrated circuit (MMIC).
- the circuit processes signals having a frequency in the range of about 20 GHz and higher, although the precise bandwidth of the frequency that is processed will vary depending on the application. For example, some possible circuits process signals in the bandwidth of about 27 GHz to about 32 GHz for voice communication applications such as mobile telephones, signals in the bandwidth of about 32 GHz to about 38 GHz for digital radio applications, signals up to about 50 GHz for high- speed data communication, and signals at about 77 GHz for vehicle-mounted radar applications.
- the dies 106 can be formed from a variety of different materials. Examples of such materials include silicon germanium (SiGe) and gallium arsenide (GaAs).
- the thickness T ⁇ e of the die 106 will vary depending on the type of material and design of the die 106. For example, the thickness for many types of materials will be in the range of about 2 mils to about 10 mils.
- the die 106 has a top portion 118 and a bottom portion 120. A contact pad 122 or point is positioned on the top portion 118 of the die 106.
- the present invention can be used for any type of circuit or electrical components for processing high frequency signals whether they are mounted on a die, a wafer, or a similar type of structure that has an electrical contact point elevated at a position above the structure's bottom portion 104 so that it will not be in direct electrical contact with the circuit board 102 to which the structure is mounted.
- the structure on which the electrical circuit or electrical components are mounted can be formed from any type of material, including SiGe and GaAs, suitable for mounting circuits and electrical components.
- the wire 108 between the die 106 and the discrete electrical component 104 is a round wire having first and second ends 116a and 116b.
- the first end 116a is bonded to the contact pad 122 on the top portion 118 of the die 106 and the second end 116b is bonded to the contact pad 114 on the top portion 110 of the discrete electrical component 104.
- the first end 116a of the wire 108 is bonded to the contact pad 122 of the die 104 using a ball bond 124.
- the combined thickness J comb of the ball bond 124 and the die 106 is about the same as the thickness of the discrete electrical component 104.
- the wire 108 is substantially parallel to the circuit board 102 and the length of the intermediate signal path 108 between the die 106 and the discrete electrical component 104 is minimized.
- Other techniques for bonding a wire forming an intermediate signal path to the die are possible as well.
- the wire can be bonded to the die using a wedge bond 126 as illustrated in Figure 2.
- the intermediate signal path can be a ribbon having a width that is greater than its thickness. Similar techniques are used to bond the second end 116b of the wire 108 to the discrete electrical component 104.
- the wire 108 is substantially parallel to the circuit board when its length extends in about the same direction as the circuit board 102 to which the die 106 and discrete electrical component 104 are mounted; the wire 108 may have a slight curve and the first and second ends of the wire 108 may be slightly different distances from the circuit board.
- the difference in the distance from the circuit board 102 to the first and second ends 116a and 116b of the intermediate signal path is in the range from about 2 mils to about 12 mils.
- the difference in the distance from the circuit board 102 to the first and second ends 116a and 116b is in the range from about 2 mils to about 12 mils.
- Figure 3 illustrates the performance of a wire connected to 50 ⁇ microstrips by different lengths of wire.
- the two 50 ⁇ microstrip lines were mounted or printed on a laminate substrate and electrically isolated.
- the microstrips were then connected using a wire having a diameter of 1 mil and lengths of 5 mils, 8, mils, 12 mils, and 15 mils.
- the wire was attached to the microstrip using a ball bond.
- the wire having a length of 5 mils had a cut-off frequency of 47.0 GHz (frequency response trace 128), the wire having a length of 8 mils had a cut-off frequency of 27.0 GHz (frequency response trace 130), the wire having a length of 12 mils had a cut-off frequency of 12.0 GHz (frequency response trace 132), and the wire having a length of 15 mils had a cut-off frequency of 10.0 GHz (frequency response trace 134).
- 8 mils is too long if the higher than 27 GHz frequency bands are considered.
- a 50 ⁇ microstrip line is mounted on a GaAs die having a thickness of 2.5 mils.
- the die was mounted on a test board on which a circuit having a bonding pad, an input, and an output.
- the impedance of the circuit on the test board substantially matched the impedance of the microstrip and was 50 ⁇ .
- the microstrip was electrically connected to the bonding pad by different types of bonds, including a ball-bond, a wedge bond, a ribbon bond, and a stack-capacitor bond in which a wire is attached to the top portion of a DC block capacitor and to the microstrip as illustrated in Figures 1 A and IB.
- the bottom portion of the DC block capacitor is then mounted on and in electrical communication with the bonding pad.
- the wire for the ball and wedge bonds has a diameter of 1 mil
- the wire for the ribbon bond had a thickness of 1 mil and a width of 2 mils.
- the wires and ribbons connected directly to the microstrip had a length of 10 mils.
- the wire connected to the block capacitor had a length of 6 mils.
- the wire attached to the DC block capacitor and to the die using a ball bond had a cut-off frequency greater than 50.0 GHz (frequency response trace 136)
- the ribbon attached directly to the microstrip and to the die using a ribbon bond had a cut-off frequency of 47.0 GHz (frequency response trace 138)
- the wire attached directly to the microstrip and to the die using a wedge bond had a cut-off frequency of 26.2 GHz (frequency response trace 140)
- the wire attached directly to the microstrip and to the die using a ball bond had a cut-off frequency of 23.2 GHz (frequency response trace 142).
- a 50 ⁇ microstrip line is mounted on a SiGe die having a thickness of 10 mils.
- the die was mounted on a test board on which a circuit having a bonding pad, an input, and an output.
- the impedance of the circuit on the test board substantially matched the impedance of the microstrip and was 50 ⁇ .
- the die was a co-planer type of circuit and two bonds were used to connect the die to a grounding strip on the test board.
- the microstrip was connected to the bonding pad by different types of bonds, including a ball-bond, a wedge bond, a ribbon bond, and a stack-capacitor bone in which a wire is attached to the top portion of a DC block capacitor and to the top portion of a die using a ball bond as illustrated in Figures 1 A and IB.
- the bottom portion of the DC block capacitor is then mounted on and in electrical communication wititi the bonding pad.
- the wire for the ball and wedge bonds has a diameter of 1 mil
- the wire for the ribbon bond had a thickness of 1 mil and a width of 2 mils.
- the wires and ribbons connected directly to the microstrip had a length of 17 mils.
- the wire connected to the DC block capacitor had a length of 6 mils.
- the wire attached to the block capacitor and to the die using a ball bond had a cut-off frequency of 42.0 GHz (frequency response trace 144)
- the ribbon attached directly to the microstrip and to the die using a ribbon bond had a cut-off frequency of 5.6 GHz (frequency response trace 146)
- the wire attached directly to the microstrip and to the die using a wedge bond had a cut-off frequency of 4.4 GHz (frequency response trace 148)
- the wire attached directly to the microstrip and to the die using a ball bond had a cut-off frequency of 4.1 GHz (frequency response trace 150).
- the frequency response improves as follows.
- the wire attached to the block capacitor and to the die using a ball bond had a cut-off frequency greater than 50 GHz (frequency response trace 144)
- the ribbon attached directly to the microstrip and to the die using a ribbon bond had a cut-off frequency of about 20 GHz (frequency response trace 146)
- the wire attached directly to the microstrip and to the die using a wedge bond had a cut-off frequency of about 17 GHz (frequency response trace 148)
- the wire attached directly to the microstrip and to the die using a ball bond had a cut-off frequency of about 17 GHz (frequency response trace 150).
- test package 158 was mounted on a circuit board.
- the test package 158 was formed by a laminate substrate 160.
- a die 162 having a thickness of 5 mils is mounted on the substrate 160.
- a microstrip 164 having an impedance of 50 ⁇ is mounted on the die 162 and has first and second ends 166 and 168.
- Two bonding pads 170 and 172 also are mounted on the laminate substrate 160.
- the first end 166 of the microstrip 164 is connected to the first bonding pad 170 with three wires 174 to minimize the distribute inductance.
- Each of the three wires 174 had a length of 10 mils.
- the second end 168 of the microstrip 164 was connected to a top portion 176 of a DC block capacitor 178 having a capacitance of 100 pf with a wire 180 having a length of about 6 mils.
- the wire 180 was connected to the second end 168 of the microstrip 164 with a ball bond.
- the ball bond had a thickenss in the range of about 1.5 mils to about 2 mils.
- the capacitor 178 had a thickness of 7 mils and a bottom portion mounted on and in electrical communication with the second bonding pad 172.
- the laminate substrate 160 was mounted on a test board 188 having a first printed trace 190 forming an input port and a second printed trace 192 having an output port.
- the first bonding pad 170 is in electrical communication with the first trace 190 through a via
- the second bonding pad 172 is in electrical communication with the second trace 192 through a via.
- a signal was then conducted from the input to the output.
- Trace 184 represents the measured frequency response at the input
- trace 186 represents the measured frequency response at the output.
- the circuit used in this experiment demonstrated good performance up to at least 50 GHz.
- one possible application for connecting a die and discrete electrical component as described herein includes a system for transmitting and/or receiving high-frequency RF signals through an antenna 154.
- a signal processing circuit 152 is in electrical communication with the antenna 154 via a signal path 156.
- the signal processing circuit 152 includes a variety of electrical components (not shown) mounted on a circuit board such as low noise amplifiers, power amplifiers, oscillators, mixers, and intermediate filters. At least some of these components are mounted on a die and use an intermediate signal path and discrete electrical component to translate the signal from the die to a trace on the circuit board as illustrated in Figures 1 A and IB.
- Examples of such applications include processing signals for a variety of applications such as stationary applications, hand-held applications, and mobile applications. More specific examples include voice communications such as mobile telephones; two-way radios; digital radios; satellite links and data transmission; wireless network connections, including wireless Internet connections; wireless modems; vehicle-mounted radar for collision prevention and vehicle speed control; and any other application in which high-frequency signals are processed.
- voice communications such as mobile telephones; two-way radios; digital radios; satellite links and data transmission; wireless network connections, including wireless Internet connections; wireless modems; vehicle-mounted radar for collision prevention and vehicle speed control; and any other application in which high-frequency signals are processed.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037003802A KR100839252B1 (en) | 2000-09-15 | 2001-09-07 | Connetion For Conducting High Frequency Signal Between A Circuit And A Discrete Electrical Component |
AT01968674T ATE498909T1 (en) | 2000-09-15 | 2001-09-07 | CONNECTION FOR CARRYING A HIGH FREQUENCY SIGNAL BETWEEN A CIRCUIT AND A DISCRETE ELECTRICAL COMPONENT |
DE60144053T DE60144053D1 (en) | 2000-09-15 | 2001-09-07 | CONNECTION FOR LEADING A HIGH-FREQUENCY SIGNAL BETWEEN A CIRCUIT AND A DISCRETE ELECTRICAL COMPONENT |
JP2002527567A JP2004529484A (en) | 2000-09-15 | 2001-09-07 | Connections for transmitting high-frequency signals between circuits and individual electrical components |
AU2001288906A AU2001288906A1 (en) | 2000-09-15 | 2001-09-07 | Connection for conducting high frequency signal between a circuit and a discrete electrical component |
EP01968674A EP1317769B1 (en) | 2000-09-15 | 2001-09-07 | Connection for conducting high frequency signal between a circuit and a discrete electrical component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/662,186 US6646521B1 (en) | 2000-09-15 | 2000-09-15 | Connection for conducting high frequency signal between a circuit and a discrete electric component |
US09/662,186 | 2000-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002023620A2 true WO2002023620A2 (en) | 2002-03-21 |
WO2002023620A3 WO2002023620A3 (en) | 2003-03-27 |
Family
ID=24656726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/028113 WO2002023620A2 (en) | 2000-09-15 | 2001-09-07 | Connection for conducting high frequency signal between a circuit and a discrete electrical component |
Country Status (10)
Country | Link |
---|---|
US (1) | US6646521B1 (en) |
EP (1) | EP1317769B1 (en) |
JP (1) | JP2004529484A (en) |
KR (1) | KR100839252B1 (en) |
AT (1) | ATE498909T1 (en) |
AU (1) | AU2001288906A1 (en) |
DE (1) | DE60144053D1 (en) |
MY (1) | MY127129A (en) |
TW (1) | TW565971B (en) |
WO (1) | WO2002023620A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006132803A2 (en) * | 2005-06-06 | 2006-12-14 | Raytheon Company | Reduced inductance interconnect for enhanced microwave and millimeter-wave systems |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7187256B2 (en) * | 2004-02-19 | 2007-03-06 | Hittite Microwave Corporation | RF package |
US7074705B2 (en) * | 2004-02-25 | 2006-07-11 | Agere Systems Inc. | Methods and apparatus for integrated circuit ball bonding with substantially perpendicular wire bond profiles |
US7187249B2 (en) * | 2004-09-24 | 2007-03-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Interconnecting a port of a microwave circuit package and a microwave component mounted in the microwave circuit package |
US9912448B2 (en) * | 2012-02-13 | 2018-03-06 | Sentinel Connector Systems, Inc. | Testing apparatus for a high speed communications jack and methods of operating the same |
KR102419900B1 (en) | 2015-09-02 | 2022-07-13 | 삼성전자주식회사 | Printed Circuit Board Module and Electronic Device including the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0772234A2 (en) * | 1995-11-02 | 1997-05-07 | W.L. GORE & ASSOCIATES, INC. | Integrated circuit package |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3893159A (en) * | 1974-02-26 | 1975-07-01 | Rca Corp | Multiple cell high frequency power semiconductor device having bond wires of differing inductance from cell to cell |
US4225584A (en) * | 1977-12-10 | 1980-09-30 | Henkel Kommanditgesellschaft Auf Aktien | Animal feeds containing a mixture of nitrovin, carbadox or olaquindox and proteolytic enzymes |
JPH0799753B2 (en) | 1985-11-06 | 1995-10-25 | 日本電気株式会社 | Hybrid integrated circuit |
JPS63293842A (en) * | 1987-05-26 | 1988-11-30 | Nec Corp | Integrated circuit |
JP2834878B2 (en) | 1990-09-28 | 1998-12-14 | 三洋電機株式会社 | Hybrid integrated circuit |
US5438305A (en) * | 1991-08-12 | 1995-08-01 | Hitachi, Ltd. | High frequency module including a flexible substrate |
JPH0883817A (en) * | 1994-09-09 | 1996-03-26 | Mitsubishi Materials Corp | Semiconductor integrated circuit and its manufacturing method |
US5777528A (en) * | 1995-05-26 | 1998-07-07 | Motorola, Inc. | Mode suppressing coplanar waveguide transition and method |
JP3476612B2 (en) * | 1995-12-21 | 2003-12-10 | 三菱電機株式会社 | Semiconductor device |
US5815427A (en) * | 1997-04-02 | 1998-09-29 | Micron Technology, Inc. | Modular memory circuit and method for forming same |
US6127894A (en) * | 1998-01-21 | 2000-10-03 | Uniden San Diego Research & Development Center, Inc. | High frequency shunt feedback amplifier topology |
US6259148B1 (en) * | 1998-08-13 | 2001-07-10 | International Business Machines Corporation | Modular high frequency integrated circuit structure |
SE515661C2 (en) * | 1998-12-22 | 2001-09-17 | Ericsson Telefon Ab L M | Wire bonding Compensation |
US6208225B1 (en) * | 1999-02-25 | 2001-03-27 | Formfactor, Inc. | Filter structures for integrated circuit interfaces |
US6201454B1 (en) * | 1999-03-30 | 2001-03-13 | The Whitaker Corporation | Compensation structure for a bond wire at high frequency operation |
US6294966B1 (en) * | 1999-12-31 | 2001-09-25 | Hei, Inc. | Interconnection device |
-
2000
- 2000-09-15 US US09/662,186 patent/US6646521B1/en not_active Expired - Fee Related
-
2001
- 2001-09-07 EP EP01968674A patent/EP1317769B1/en not_active Expired - Lifetime
- 2001-09-07 WO PCT/US2001/028113 patent/WO2002023620A2/en active Application Filing
- 2001-09-07 JP JP2002527567A patent/JP2004529484A/en active Pending
- 2001-09-07 AU AU2001288906A patent/AU2001288906A1/en not_active Abandoned
- 2001-09-07 AT AT01968674T patent/ATE498909T1/en not_active IP Right Cessation
- 2001-09-07 KR KR1020037003802A patent/KR100839252B1/en not_active IP Right Cessation
- 2001-09-07 DE DE60144053T patent/DE60144053D1/en not_active Expired - Lifetime
- 2001-09-12 MY MYPI20014267 patent/MY127129A/en unknown
- 2001-09-19 TW TW090123073A patent/TW565971B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0772234A2 (en) * | 1995-11-02 | 1997-05-07 | W.L. GORE & ASSOCIATES, INC. | Integrated circuit package |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 011, no. 314 (E-549), 13 October 1987 (1987-10-13) -& JP 62 108577 A (NEC CORP), 19 May 1987 (1987-05-19) * |
PATENT ABSTRACTS OF JAPAN vol. 016, no. 408 (E-1255), 28 August 1992 (1992-08-28) -& JP 04 137739 A (SANYO ELECTRIC CO LTD), 12 May 1992 (1992-05-12) * |
See also references of EP1317769A2 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006132803A2 (en) * | 2005-06-06 | 2006-12-14 | Raytheon Company | Reduced inductance interconnect for enhanced microwave and millimeter-wave systems |
WO2006132803A3 (en) * | 2005-06-06 | 2007-03-01 | Raytheon Co | Reduced inductance interconnect for enhanced microwave and millimeter-wave systems |
US7528792B2 (en) | 2005-06-06 | 2009-05-05 | Raytheon Company | Reduced inductance interconnect for enhanced microwave and millimeter-wave systems |
US8059057B2 (en) | 2005-06-06 | 2011-11-15 | Raytheon Company | Reduced inductance interconnect for enhanced microwave and millimeter-wave systems |
Also Published As
Publication number | Publication date |
---|---|
ATE498909T1 (en) | 2011-03-15 |
TW565971B (en) | 2003-12-11 |
EP1317769A2 (en) | 2003-06-11 |
DE60144053D1 (en) | 2011-03-31 |
EP1317769B1 (en) | 2011-02-16 |
MY127129A (en) | 2006-11-30 |
KR20030033065A (en) | 2003-04-26 |
KR100839252B1 (en) | 2008-06-17 |
JP2004529484A (en) | 2004-09-24 |
US6646521B1 (en) | 2003-11-11 |
WO2002023620A3 (en) | 2003-03-27 |
AU2001288906A1 (en) | 2002-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3649111B2 (en) | High frequency circuit board, high frequency module using the same, and electronic device using the same | |
US6556169B1 (en) | High frequency circuit integrated-type antenna component | |
KR100367936B1 (en) | High frequency integrated circuit device with laminated body | |
US4543544A (en) | LCC co-planar lead frame semiconductor IC package | |
US6424223B1 (en) | MMIC power amplifier with wirebond output matching circuit | |
Heyen et al. | Novel LTCC/BGA modules for highly integrated millimeter-wave transceivers | |
US6081242A (en) | Antenna matching circuit | |
EP1505683B1 (en) | High frequency switch module and multi-layer substrate for high frequency switch module | |
US5832376A (en) | Coplanar mixer assembly | |
US5852391A (en) | Microwave/millimeter-wave functional module package | |
CN111223827B (en) | Transition circuit for integrated circuit chip | |
CN113632224A (en) | Wilkinson distributor | |
JP2001308130A (en) | High frequency circuit, module having mounted high frequency circuit and communication device | |
US6646521B1 (en) | Connection for conducting high frequency signal between a circuit and a discrete electric component | |
KR20010030080A (en) | High frequency circuit module and communication device | |
US5530285A (en) | Low-impedance surface-mount device | |
EP1652198B1 (en) | Compact impedance transformation circuit | |
US6759742B2 (en) | Interchangeable bond-wire interconnects | |
Nakatsugawa et al. | Line-loss and size reduction techniques for millimeter-wave RF front-end boards by using a polyimide/alumina-ceramic multilayer configuration | |
JPH11195731A (en) | Semiconductor device | |
JPH0936617A (en) | High frequency module | |
KR101938227B1 (en) | Waveguide package | |
JP3046287B1 (en) | Connection terminal structure | |
JP2001284490A (en) | Grounding structure for high-frequency wave | |
JP2004221944A (en) | High frequency wiring board |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ CZ DE DE DK DK DM DZ EC EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002527567 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020037003802 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001968674 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020037003802 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001968674 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |