WO2002027338A2 - Device for testing contacts - Google Patents
Device for testing contacts Download PDFInfo
- Publication number
- WO2002027338A2 WO2002027338A2 PCT/EP2001/010893 EP0110893W WO0227338A2 WO 2002027338 A2 WO2002027338 A2 WO 2002027338A2 EP 0110893 W EP0110893 W EP 0110893W WO 0227338 A2 WO0227338 A2 WO 0227338A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contacts
- cij
- contact
- connection conductors
- metal layer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/281—Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing
- G01R31/2812—Checking for open circuits or shorts, e.g. solder bridges; Testing conductivity, resistivity or impedance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
- G01R31/70—Testing of connections between components and printed circuit boards
- G01R31/71—Testing of solder joints
Definitions
- the invention relates to a device for testing a series of contacts, which are provided with connection conductors for supplying an electric current to said contacts.
- a device for suitably be used to supply information regarding the reliability of contacts.
- the properties of the contacts such as the impedance, can be examined in dependence upon various parameters, such as temperature, humidity, the material from which they are made and the way in which they are made. In order to form an accurate idea of said properties, it is necessary to test large numbers of contacts.
- a drawback of the known device resides in that testing a large number of contacts requires either a large number of devices to be made or a device to be provided with a large number of connection conductors, causing this device to be very complex and expensive.
- a device of the type mentioned in the opening paragraph is characterized in accordance with the invention in that the device comprises a body on which the contacts are situated in the form of an array, and the connection conductors are provided with selection means enabling the selection of maximally two contacts, and the connection conductors are formed in maximally two separate metal layers.
- the invention is based on the recognition that the number of connection conductors for a large number of contacts can be substantially reduced in various ways.
- n x m contacts are each provided with two connection conductors of a group of n connection conductors and a group of m connection conductors, respectively.
- part of the test current will also flow through other contacts via a (series of) circuit(s) formed in the matrix, which clouds the measurement.
- a circuit current can be precluded by incorporating selection means, in the form of a diode, in the device for testing the contact. This enables each pair of two contacts to be quantitatively measured and tested by means of a single selection.
- the two groups of conductors are embodied in no more than two separate metal (conductor) layers, the device is not complex and can be readily manufactured. Diodes used as selection means can be very suitably integrated if the device comprises a semiconductor body.
- a contact is formed on each side of the rectifier junction formed by the diode, so that per selection only two contacts are measured/tested simultaneously. In this manner, a large number of contacts can be quantitatively tested with a (substantially) reduced number of connection conductors.
- a preferred embodiment of a device in accordance with the invention is therefore characterized in that each contact is connected on one side to a first connection conductor and on the other side, via a neighboring contact, to a second connection conductor, the first and the second connection conductor being formed in, respectively, a first and a second metal layer and extending substantially perpendicularly to each other, and the selection means comprising diodes, formed in a semiconductor body, said diodes connecting each contact to the neighboring contact.
- This device can be readily manufactured in an inexpensive manner.
- the two metal layers are situated on either side of a substrate on which the body is mounted, the first connection conductor being directly connected to the contact and the second connection conductor being connected to the neighboring contact by means of a via.
- each contact in a network is connected, on one side, to a first metal layer and, on the other side, in a second metal layer, to a series-arranged inductance and capacitance, the network being provided with no more than two connection conductors.
- the selection means are formed, in this case, by accommodating the contacts in a resonant circuit and coupling each contact to a selection element. In this manner, using only two connection conductors, each contact can be separately, and at least semi-quantitatively, measured and tested.
- the selection element is now formed by a series arrangement of a capacitor and a coil.
- the two connection conductors (and the other conductors) are formed, in this case, in no more than one metal layer.
- the first metal layer is situated on the body attached to a substrate on which the second metal layer is situated in which the series-arranged inductance and capacitance are housed and in which the two connection conductors are formed.
- the first metal layer is situated on the body attached to a substrate, and the series-arranged inductance and capacitance are accommodated therein, and the second metal layer is situated on the substrate, and the two connection conductors are formed therein.
- the value of the product of each series-arranged inductance and capacitance for each contact differs at least 20% from the value of the product for any other contact.
- the contacts are preferably provided in the form of a two-dimensional array on the body. In this manner, a large number of contacts can be tested in a device which is as compact as possible.
- a contact which, in practice, is very attractive and important is formed by a soldered joint.
- Fig. 1 is a diagrammatic, perspective view of a first example of a device in accordance with the invention
- Fig. 2 is a diagrammatic, phantom view of a part of the device shown in Fig. 1 in a practical embodiment
- Fig. 3 is a diagrammatic, perspective view of a second example of a device in accordance with the invention.
- Fig. 4 shows, in a practical embodiment, a diagrammatic, phantom view of a part of a device resembling the device shown in Fig. 3, and Fig. 5 is a diagrammatic, perspective view of a third example of a device in accordance with the invention.
- Fig. 1 is a diagrammatic, perspective view of a first example of a device in accordance with the invention
- Fig. 2 is a diagrammatic, phantom view of a part of the device, as shown in Fig. 1, in a practical embodiment.
- the device 10 comprises a series of contacts Cij, in this case solder contacts Cij, which are provided with connection conductors G, H for supplying electric current to the contacts Cij in order to test these contacts.
- the device 10 comprises a body 1, in this case a semiconductor body 1, on which the contacts Cij are situated in the form of an array, and the connection conductors G, H are provided with selection means S enabling maximally two contacts Cl 1, Cl l' to be selected, said connection conductors G, H being formed in maximally two separate metal layers 2, 3.
- the selection means S are diodes D. These diodes are formed in the body 1, in this case a semiconductor body 1, from a p-type silicon region 21 and an n-type silicon region 22 (see Fig. 2).
- each diode D is connected, via a first contact Cl 1, to a first connection conductor Gl and, on a second side 22, each diode D is connected to a second connection conductor HI via a second contact Cl I'.
- the connection conductors Gl, HI form part of two groups of connection conductors Gi, Hj which extend perpendicularly with respect to each other, but within these groups the conductors, Gi and Hi respectively, extend parallel to each other.
- n x m contacts Cij can be tested by means of only n+m connection conductors Gi, Hj, since merely energizing the connection conductors Gl, HI enables the two contacts Cl l and Cl l' to be jointly (semi-)quantitatively tested.
- a parasitic route for the electric current extending, for example, via the further connection conductors H2, G2 and through the contact pairs C21 , C21', C22, C22' and C12, C12' comprises three, or more generally an odd number, of diodes D one of which is oppositely directed with respect to the diode D of the contact pair Cl l, Cl l'.
- this parasitic path is blocked if the diode D associated with the contact pair Cl 1, Cl 1' is forward biassed, which should be the case when said pair is tested.
- connection conductors Gi, Hj are formed in two metal layers 2, 3 and are situated, in this example, on either side of a substrate 4, at the edge of which they are coupled, for example by means of clamping contacts, which are not shown in Fig. 2, to test equipment, not shown either in the drawing.
- the connection conductor HI situated on the lower side of the substrate 4, is connected to the contact Cll' by means of an electroconductive via Nl 1.
- Fig. 3 only shows the connection of the contact pair Cl 1, Cl l'.
- the other contact pairs Cij are correspondingly formed and connected to the connection conductors Gi, Hj.
- Fig. 3 is a diagrammatic, perspective view of a second example of a device in accordance with the invention
- Fig. 4 is a diagrammatic, phantom view of a practical embodiment of a device resembling that shown in Fig. 3.
- all contacts Cij arranged on the body 1 are interconnected via a first metal layer 2 provided on the body 1.
- the contacts Cij are also incorporated in a network ⁇ forming a resonant circuit.
- a series arrangement of a capacitor Zl 1 and a coil LI 1, forming the selection means S in this example, is coupled to a contact Cl l, said selection means enabling each individual contact Cij to be tested via no more than two metal layers 2, 3.
- the product Zij*Lij is chosen to be different for each contact Cij, the differences, like in this example, preferably being at least approximately 20%.
- the network ⁇ is provided with two connection conductors Gl, HI accommodating, respectively, a resistor.31 of 47 Ohm and a further resistor 32 of 47 Ohm.
- the network ⁇ further comprises another resistor 33 (to ground) of 5.6 Ohm.
- the values of Zl 1 and LI 1 are, in this example, 680 pF and 330 nH, respectively.
- the values of Z12 and L12 are approximately 20%) greater, and the values of Z13 and L13 are 20% as great again, etc.
- each contact Cij can be individually tested.
- this test is at least semi-quantitative, since variation of the (test) frequency will result in a signal SL comprising a spectrum wherein each individual contact forms a peak. The height of this peak is a semi-quantitative measure of the size of the impedance of the contact Cij.
- the quality or the reliability of each pair of contacts Cij, Cij' can thus be individually tested by monitoring over time under test conditions that can be varied.
- Fig. 4 shows a practical embodiment of a device similar to that shown in Fig. 3. In this modification, unlike device 10 of Fig.
- the contacts Cij are two-dimensionally arranged.
- the practical embodiment substantially corresponds to that of the first example.
- a first metal layer 2 is situated on the body 1 which is secured onto a substrate 4 via the contacts Cij, which substrate is provided with a metal layer 3, only on a side 3 adjoining the body 1, forming the second metal layer 3 wherein the major part of the network N as well as the two connection conductors G, H are formed.
- the network N further comprises the components Zij, Lij and the contacts Cij, which are incorporated in a conductor pattern.
- the connection conductors G, H are coupled, in the same manner as in the first example, to suitable test equipment, which is not shown in the drawing.
- a conductor track 45 of the network N is connected to ground.
- Fig. 5 is a diagrammatic, perspective view of a third example of a device in accordance with the invention.
- the device 10 shown in this example is substantially the same as the device shown in the second example.
- the passive selection means S which in this case too comprise a capacitor Zij and a coil Lij which are arranged in series, are integrated in the first metal layer 2 in the body 1.
- the advantage of the device 10 of this example resides in that this modification, wherein the passive components Lij, Zij are integrated in the (semiconductor) body 1 by means of (semiconductor) technology, can be more readily manufactured. All this means that, unlike the device shown in Figs. 3 and 4, also the testing of contacts Cij is not clouded in this example by the testing of contacts by means of which the passive components Lij, Zij are provided.
- the possible values of Lij may be maximally 100 nH, while the values of Zij range between 0.1 and 31 pF.
- the device 10 of each of the examples described hereinabove can be manufactured using customary techniques known within the semiconductor technology and the technology relating to substrates, such as printed circuit boards.
- the invention is not limited to the examples described herein, and within the scope of the invention many modifications and variations are possible to those skilled in the art.
- the contacts which comprise soldered contacts in the examples described herein, may alternatively comprise other contacts such as an electroconductive glued joint or a clamping contact.
- the body does not necessarily have to be a semiconductor body.
- Use can also suitably be made of a printed circuit board or a ceramic board. The latter board can also be used as a substrate in the examples described hereinabove.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002530866A JP2004510165A (en) | 2000-09-28 | 2001-09-19 | Device for inspecting contacts |
EP01982330A EP1320760A2 (en) | 2000-09-28 | 2001-09-19 | Device for testing contacts |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00203363 | 2000-09-28 | ||
EP00203363.7 | 2000-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002027338A2 true WO2002027338A2 (en) | 2002-04-04 |
WO2002027338A3 WO2002027338A3 (en) | 2002-07-04 |
Family
ID=8172080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2001/010893 WO2002027338A2 (en) | 2000-09-28 | 2001-09-19 | Device for testing contacts |
Country Status (4)
Country | Link |
---|---|
US (1) | US6731124B2 (en) |
EP (1) | EP1320760A2 (en) |
JP (1) | JP2004510165A (en) |
WO (1) | WO2002027338A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007036601A1 (en) * | 2005-09-30 | 2007-04-05 | Aulis Tuominen | Method, circuit board and test apparatus for testing solder joints |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO315917B1 (en) | 2002-04-09 | 2003-11-10 | Filetrac As | System and method for positioning objects |
US7429864B2 (en) * | 2004-12-17 | 2008-09-30 | Hewlett-Packard Development Company, L.P. | Systems and methods for rectifying and detecting signals |
US7982468B2 (en) * | 2008-03-13 | 2011-07-19 | Oracle America, Inc. | Apparatus and method for testing electrical interconnects with switches |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624496A (en) * | 1969-12-31 | 1971-11-30 | Nasa | Method and apparatus for swept-frequency impedance measurements of welds |
DE2828551A1 (en) * | 1978-06-29 | 1980-03-20 | Bbc Brown Boveri & Cie | CIRCUIT ARRANGEMENT FOR MONITORING POTENTIAL-FREE SIGNAL CONTACTS IN BUILDING CONTROL |
US4587481A (en) * | 1982-09-22 | 1986-05-06 | Siemens Aktiengesellschaft | Arrangement for testing micro interconnections and a method for operating the same |
US5962868A (en) * | 1997-07-14 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having contact check circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4630355A (en) * | 1985-03-08 | 1986-12-23 | Energy Conversion Devices, Inc. | Electric circuits having repairable circuit lines and method of making the same |
US4725773A (en) * | 1986-06-27 | 1988-02-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Cross-contact chain |
FR2769131B1 (en) * | 1997-09-29 | 1999-12-24 | St Microelectronics Sa | SEMICONDUCTOR DEVICE HAVING TWO GROUND CONNECTION POINTS CONNECTED TO A GROUND CONNECTION LEG AND METHOD FOR TESTING SUCH A DEVICE |
-
2001
- 2001-09-19 EP EP01982330A patent/EP1320760A2/en not_active Withdrawn
- 2001-09-19 JP JP2002530866A patent/JP2004510165A/en not_active Withdrawn
- 2001-09-19 WO PCT/EP2001/010893 patent/WO2002027338A2/en not_active Application Discontinuation
- 2001-09-27 US US09/965,453 patent/US6731124B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624496A (en) * | 1969-12-31 | 1971-11-30 | Nasa | Method and apparatus for swept-frequency impedance measurements of welds |
DE2828551A1 (en) * | 1978-06-29 | 1980-03-20 | Bbc Brown Boveri & Cie | CIRCUIT ARRANGEMENT FOR MONITORING POTENTIAL-FREE SIGNAL CONTACTS IN BUILDING CONTROL |
US4587481A (en) * | 1982-09-22 | 1986-05-06 | Siemens Aktiengesellschaft | Arrangement for testing micro interconnections and a method for operating the same |
US5962868A (en) * | 1997-07-14 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having contact check circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007036601A1 (en) * | 2005-09-30 | 2007-04-05 | Aulis Tuominen | Method, circuit board and test apparatus for testing solder joints |
Also Published As
Publication number | Publication date |
---|---|
US6731124B2 (en) | 2004-05-04 |
US20020075029A1 (en) | 2002-06-20 |
JP2004510165A (en) | 2004-04-02 |
WO2002027338A3 (en) | 2002-07-04 |
EP1320760A2 (en) | 2003-06-25 |
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