WO2002031858A2 - Gas distribution apparatus for semiconductor processing - Google Patents
Gas distribution apparatus for semiconductor processing Download PDFInfo
- Publication number
- WO2002031858A2 WO2002031858A2 PCT/US2001/030178 US0130178W WO0231858A2 WO 2002031858 A2 WO2002031858 A2 WO 2002031858A2 US 0130178 W US0130178 W US 0130178W WO 0231858 A2 WO0231858 A2 WO 0231858A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- flow
- gas supply
- supply line
- control valve
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/131—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components
- G05D11/132—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components by controlling the flow of the individual components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Automation & Control Theory (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037004813A KR100725615B1 (en) | 2000-10-06 | 2001-09-26 | Gas distribution apparatus for semiconductor processing |
AU2001296338A AU2001296338A1 (en) | 2000-10-06 | 2001-09-26 | Gas distribution apparatus for semiconductor processing |
JP2002535153A JP4838971B2 (en) | 2000-10-06 | 2001-09-26 | Gas supply apparatus and substrate processing method for semiconductor processing |
EP01977202A EP1323178A2 (en) | 2000-10-06 | 2001-09-26 | Gas distribution apparatus for semiconductor processing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/680,319 | 2000-10-06 | ||
US09/680,319 US6333272B1 (en) | 2000-10-06 | 2000-10-06 | Gas distribution apparatus for semiconductor processing |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002031858A2 true WO2002031858A2 (en) | 2002-04-18 |
WO2002031858A3 WO2002031858A3 (en) | 2002-09-06 |
Family
ID=24730618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/030178 WO2002031858A2 (en) | 2000-10-06 | 2001-09-26 | Gas distribution apparatus for semiconductor processing |
Country Status (8)
Country | Link |
---|---|
US (2) | US6333272B1 (en) |
EP (1) | EP1323178A2 (en) |
JP (2) | JP4838971B2 (en) |
KR (1) | KR100725615B1 (en) |
CN (1) | CN100358080C (en) |
AU (1) | AU2001296338A1 (en) |
TW (1) | TW522483B (en) |
WO (1) | WO2002031858A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10431431B2 (en) | 2014-10-17 | 2019-10-01 | Lam Research Corporation | Gas supply delivery arrangement including a gas splitter for tunable gas flow control |
Families Citing this family (175)
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Also Published As
Publication number | Publication date |
---|---|
EP1323178A2 (en) | 2003-07-02 |
JP4838971B2 (en) | 2011-12-14 |
WO2002031858A3 (en) | 2002-09-06 |
AU2001296338A1 (en) | 2002-04-22 |
KR20040004391A (en) | 2004-01-13 |
US6508913B2 (en) | 2003-01-21 |
US6333272B1 (en) | 2001-12-25 |
US20020042205A1 (en) | 2002-04-11 |
TW522483B (en) | 2003-03-01 |
CN1468441A (en) | 2004-01-14 |
CN100358080C (en) | 2007-12-26 |
JP2004511905A (en) | 2004-04-15 |
KR100725615B1 (en) | 2007-06-07 |
JP2011233905A (en) | 2011-11-17 |
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