WO2002043072A3 - Very small swing and low voltage cmos static memory - Google Patents

Very small swing and low voltage cmos static memory Download PDF

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Publication number
WO2002043072A3
WO2002043072A3 PCT/US2001/046942 US0146942W WO0243072A3 WO 2002043072 A3 WO2002043072 A3 WO 2002043072A3 US 0146942 W US0146942 W US 0146942W WO 0243072 A3 WO0243072 A3 WO 0243072A3
Authority
WO
WIPO (PCT)
Prior art keywords
storage elements
coupled
sensing device
low voltage
static memory
Prior art date
Application number
PCT/US2001/046942
Other languages
French (fr)
Other versions
WO2002043072A2 (en
Inventor
Mark Slamowitz
Douglas D Smith
Myron Buer
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Priority to DE60119583T priority Critical patent/DE60119583T2/en
Priority to EP01989977A priority patent/EP1374248B1/en
Publication of WO2002043072A2 publication Critical patent/WO2002043072A2/en
Publication of WO2002043072A3 publication Critical patent/WO2002043072A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Abstract

The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.
PCT/US2001/046942 2000-11-03 2001-11-05 Very small swing and low voltage cmos static memory WO2002043072A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE60119583T DE60119583T2 (en) 2000-11-03 2001-11-05 CMOS memory with small fluctuating voltages and low operating voltage
EP01989977A EP1374248B1 (en) 2000-11-03 2001-11-05 Very small swing and low voltage cmos static memory

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US24591300P 2000-11-03 2000-11-03
US60/245,913 2000-11-03
US10/012,858 2001-11-03
US10/012,858 US6639866B2 (en) 2000-11-03 2001-11-03 Very small swing high performance asynchronous CMOS static memory (multi-port register file) with power reducing column multiplexing scheme

Publications (2)

Publication Number Publication Date
WO2002043072A2 WO2002043072A2 (en) 2002-05-30
WO2002043072A3 true WO2002043072A3 (en) 2003-04-24

Family

ID=26684094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/046942 WO2002043072A2 (en) 2000-11-03 2001-11-05 Very small swing and low voltage cmos static memory

Country Status (4)

Country Link
US (5) US6639866B2 (en)
EP (1) EP1374248B1 (en)
DE (1) DE60119583T2 (en)
WO (1) WO2002043072A2 (en)

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US7746713B2 (en) * 2007-09-12 2010-06-29 Massachusetts Institute Of Technology High density 45 nm SRAM using small-signal non-strobed regenerative sensing
US7961499B2 (en) * 2009-01-22 2011-06-14 Qualcomm Incorporated Low leakage high performance static random access memory cell using dual-technology transistors
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US8493811B2 (en) * 2010-02-10 2013-07-23 Apple Inc. Memory having asynchronous read with fast read output
TWI455148B (en) * 2010-12-13 2014-10-01 Vanguard Int Semiconduct Corp Integrated device for accessing multi-port input read/write event
US20120235708A1 (en) * 2011-03-16 2012-09-20 Mark Slamowitz Method and System for High Speed Differential Synchronous Sense Amplifier
EP2689326B1 (en) 2011-03-25 2022-11-16 Intel Corporation Memory fragments for supporting code block execution by using virtual cores instantiated by partitionable engines
US8593896B2 (en) * 2011-03-30 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Differential read write back sense amplifier circuits and methods
US8522178B2 (en) * 2011-09-07 2013-08-27 Apple Inc. Re-modeling a memory array for accurate timing analysis
KR20130130478A (en) * 2012-05-22 2013-12-02 삼성전자주식회사 Input buffer
US10140138B2 (en) 2013-03-15 2018-11-27 Intel Corporation Methods, systems and apparatus for supporting wide and efficient front-end operation with guest-architecture emulation
KR102083390B1 (en) 2013-03-15 2020-03-02 인텔 코포레이션 A method for emulating a guest centralized flag architecture by using a native distributed flag architecture
US9691462B2 (en) 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory
US9373388B1 (en) * 2015-04-29 2016-06-21 Qualcomm Incorporated Sense amplifier with pulsed control for pull-up transistors
US11087800B1 (en) * 2020-04-10 2021-08-10 Sandisk Technologies Llc Sense amplifier architecture providing small swing voltage sensing

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Also Published As

Publication number Publication date
EP1374248B1 (en) 2006-05-10
US20080089144A1 (en) 2008-04-17
DE60119583D1 (en) 2006-06-14
US7986570B2 (en) 2011-07-26
US6639866B2 (en) 2003-10-28
US20100177581A1 (en) 2010-07-15
DE60119583T2 (en) 2007-05-10
WO2002043072A2 (en) 2002-05-30
US7639549B2 (en) 2009-12-29
US7251175B2 (en) 2007-07-31
US6822918B2 (en) 2004-11-23
US20040066687A1 (en) 2004-04-08
US20020125585A1 (en) 2002-09-12
EP1374248A2 (en) 2004-01-02
US20050091477A1 (en) 2005-04-28

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