WO2002043112A3 - Procede de fabrication d'un substrat - Google Patents
Procede de fabrication d'un substrat Download PDFInfo
- Publication number
- WO2002043112A3 WO2002043112A3 PCT/FR2001/003714 FR0103714W WO0243112A3 WO 2002043112 A3 WO2002043112 A3 WO 2002043112A3 FR 0103714 W FR0103714 W FR 0103714W WO 0243112 A3 WO0243112 A3 WO 0243112A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- seed layer
- layer
- support
- bonding interface
- making
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 230000010070 molecular adhesion Effects 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
- Footwear And Its Accessory, Manufacturing Method And Apparatuses (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Luminescent Compositions (AREA)
- Light Receiving Elements (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Abstract
Priority Applications (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002222036A AU2002222036A1 (en) | 2000-11-27 | 2001-11-26 | Method for making a substrate |
JP2002544758A JP2004517472A (ja) | 2000-11-27 | 2001-11-26 | 基板、特に光学、電子工学または電子光学用基板の製造方法、およびこの製造方法により得られる基板 |
DE60126328T DE60126328T2 (de) | 2000-11-27 | 2001-11-26 | Verfahren zur herstellung eines substrats insbesondere für die optik, elektronik oder optoelektronik und resultierendes substrat |
KR1020037007110A KR100805469B1 (ko) | 2000-11-27 | 2001-11-26 | 특히 광학, 전자 공학 또는 광전자 공학용의 기판 제조방법, 및 이 방법에 의한 기판 |
EP01997835A EP1344246B1 (fr) | 2000-11-27 | 2001-11-26 | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
US10/446,605 US6794276B2 (en) | 2000-11-27 | 2003-05-27 | Methods for fabricating a substrate |
US10/883,437 US7265029B2 (en) | 2000-11-27 | 2004-07-01 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US10/922,997 US7235462B2 (en) | 2000-11-27 | 2004-08-23 | Methods for fabricating a substrate |
US11/165,895 US7288430B2 (en) | 2000-11-27 | 2005-06-24 | Method of fabricating heteroepitaxial microstructures |
US11/831,484 US7888235B2 (en) | 2000-11-27 | 2007-07-31 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US11/840,696 US7615468B2 (en) | 2000-11-27 | 2007-08-17 | Methods for making substrates and substrates formed therefrom |
US11/852,562 US7646038B2 (en) | 2000-11-27 | 2007-09-10 | Method of fabricating heteroepitaxial microstructures |
US12/536,082 US7839001B2 (en) | 2000-11-27 | 2009-08-05 | Methods for making substrates and substrates formed therefrom |
US12/914,194 US7939428B2 (en) | 2000-11-27 | 2010-10-28 | Methods for making substrates and substrates formed therefrom |
US12/984,895 US8507361B2 (en) | 2000-11-27 | 2011-01-05 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US13/246,316 US8252664B2 (en) | 2000-11-27 | 2011-09-27 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US13/291,468 US10002763B2 (en) | 2000-11-27 | 2011-11-08 | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0015279A FR2817394B1 (fr) | 2000-11-27 | 2000-11-27 | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
FR00/15279 | 2000-11-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/446,605 Continuation US6794276B2 (en) | 2000-11-27 | 2003-05-27 | Methods for fabricating a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002043112A2 WO2002043112A2 (fr) | 2002-05-30 |
WO2002043112A3 true WO2002043112A3 (fr) | 2002-07-18 |
Family
ID=8856906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2001/003714 WO2002043112A2 (fr) | 2000-11-27 | 2001-11-26 | Procede de fabrication d'un substrat |
Country Status (11)
Country | Link |
---|---|
US (2) | US6794276B2 (fr) |
EP (2) | EP1344246B1 (fr) |
JP (2) | JP2004517472A (fr) |
KR (1) | KR100805469B1 (fr) |
CN (2) | CN100399511C (fr) |
AT (2) | ATE352866T1 (fr) |
AU (1) | AU2002222036A1 (fr) |
DE (2) | DE60126328T2 (fr) |
FR (1) | FR2817394B1 (fr) |
TW (1) | TW536728B (fr) |
WO (1) | WO2002043112A2 (fr) |
Families Citing this family (159)
Publication number | Priority date | Publication date | Assignee | Title |
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US7560296B2 (en) * | 2000-07-07 | 2009-07-14 | Lumilog | Process for producing an epitalixal layer of galium nitride |
US7118929B2 (en) * | 2000-07-07 | 2006-10-10 | Lumilog | Process for producing an epitaxial layer of gallium nitride |
FR2840730B1 (fr) * | 2002-06-11 | 2005-05-27 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees |
FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
FR2894990B1 (fr) | 2005-12-21 | 2008-02-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede |
US7407869B2 (en) | 2000-11-27 | 2008-08-05 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material |
EP1482549B1 (fr) * | 2003-05-27 | 2011-03-30 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Procédé pour la fabrication d'une microstructure heteroepitaxiale |
FR2835096B1 (fr) * | 2002-01-22 | 2005-02-18 | Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin | |
US8507361B2 (en) | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
FR2840731B3 (fr) | 2002-06-11 | 2004-07-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees |
US7238622B2 (en) * | 2001-04-17 | 2007-07-03 | California Institute Of Technology | Wafer bonded virtual substrate and method for forming the same |
US20050026432A1 (en) * | 2001-04-17 | 2005-02-03 | Atwater Harry A. | Wafer bonded epitaxial templates for silicon heterostructures |
WO2002084725A1 (fr) | 2001-04-17 | 2002-10-24 | California Institute Of Technology | Procede utilisant un transfert de la couche au germanium au si pour applications photovoltaiques, et heterostructures realisees par ce procede |
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FR2835095B1 (fr) * | 2002-01-22 | 2005-03-18 | Procede de preparation d'ensembles a semi-conducteurs separables, notamment pour former des substrats pour l'electronique, l'optoelectrique et l'optique | |
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Also Published As
Publication number | Publication date |
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DE60138233D1 (de) | 2009-05-14 |
JP5324803B2 (ja) | 2013-10-23 |
WO2002043112A2 (fr) | 2002-05-30 |
CN100399511C (zh) | 2008-07-02 |
CN1734718A (zh) | 2006-02-15 |
EP1791170A2 (fr) | 2007-05-30 |
US7235462B2 (en) | 2007-06-26 |
EP1791170A3 (fr) | 2007-07-04 |
US20040029359A1 (en) | 2004-02-12 |
ATE427559T1 (de) | 2009-04-15 |
FR2817394A1 (fr) | 2002-05-31 |
CN1478295A (zh) | 2004-02-25 |
KR100805469B1 (ko) | 2008-02-20 |
DE60126328D1 (de) | 2007-03-15 |
EP1791170B1 (fr) | 2009-04-01 |
ATE352866T1 (de) | 2007-02-15 |
CN1217381C (zh) | 2005-08-31 |
JP2004517472A (ja) | 2004-06-10 |
KR20030059280A (ko) | 2003-07-07 |
US6794276B2 (en) | 2004-09-21 |
AU2002222036A1 (en) | 2002-06-03 |
EP1344246B1 (fr) | 2007-01-24 |
DE60126328T2 (de) | 2007-11-08 |
FR2817394B1 (fr) | 2003-10-31 |
EP1344246A2 (fr) | 2003-09-17 |
TW536728B (en) | 2003-06-11 |
US20050026394A1 (en) | 2005-02-03 |
JP2008219019A (ja) | 2008-09-18 |
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