WO2002043121A3 - Bright field image reversal for contact hole patterning - Google Patents

Bright field image reversal for contact hole patterning Download PDF

Info

Publication number
WO2002043121A3
WO2002043121A3 PCT/US2001/046129 US0146129W WO0243121A3 WO 2002043121 A3 WO2002043121 A3 WO 2002043121A3 US 0146129 W US0146129 W US 0146129W WO 0243121 A3 WO0243121 A3 WO 0243121A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact hole
bright field
small cylinder
resist layer
field image
Prior art date
Application number
PCT/US2001/046129
Other languages
French (fr)
Other versions
WO2002043121A2 (en
Inventor
Christopher F Lyons
Ramkumar Subramanian
Marina V Plat
Todd P Lukanc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to EP01997211A priority Critical patent/EP1336193A2/en
Priority to JP2002544767A priority patent/JP4138482B2/en
Priority to KR1020037006841A priority patent/KR100831409B1/en
Priority to AU2002220166A priority patent/AU2002220166A1/en
Publication of WO2002043121A2 publication Critical patent/WO2002043121A2/en
Publication of WO2002043121A3 publication Critical patent/WO2002043121A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Abstract

A method of forming a small contact hole (160) uses a bright field mask (130) to form a small cylinder (140) in a positive resist layer (120) after exposure and developing. A negative resist layer (150) is formed around the small cylinder, and then etched or polished back to leave a top portion of the small cylinder exposed above the negative resist layer. The negative resist layer and the small cylinder (positive resist) are flood exposed to light, and then subject to a developer. What remains is a small contact hole (160) located where the small cylinder was previously located.
PCT/US2001/046129 2000-11-21 2001-10-30 Bright field image reversal for contact hole patterning WO2002043121A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP01997211A EP1336193A2 (en) 2000-11-21 2001-10-30 Bright field image reversal for contact hole patterning
JP2002544767A JP4138482B2 (en) 2000-11-21 2001-10-30 Bright field image inversion for contact hole patterning
KR1020037006841A KR100831409B1 (en) 2000-11-21 2001-10-30 Bright field image reversal for contact hole patterning
AU2002220166A AU2002220166A1 (en) 2000-11-21 2001-10-30 Bright field image reversal for contact hole patterning

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/716,215 US6358856B1 (en) 2000-11-21 2000-11-21 Bright field image reversal for contact hole patterning
US09/716,215 2000-11-21

Publications (2)

Publication Number Publication Date
WO2002043121A2 WO2002043121A2 (en) 2002-05-30
WO2002043121A3 true WO2002043121A3 (en) 2002-08-29

Family

ID=24877194

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/046129 WO2002043121A2 (en) 2000-11-21 2001-10-30 Bright field image reversal for contact hole patterning

Country Status (8)

Country Link
US (1) US6358856B1 (en)
EP (1) EP1336193A2 (en)
JP (1) JP4138482B2 (en)
KR (1) KR100831409B1 (en)
CN (1) CN1208810C (en)
AU (1) AU2002220166A1 (en)
TW (1) TW519690B (en)
WO (1) WO2002043121A2 (en)

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JPH0913483A (en) * 1995-06-27 1997-01-14 Ibikawa Concrete Kogyo Kk Gutter block
US7363099B2 (en) * 2002-06-07 2008-04-22 Cadence Design Systems, Inc. Integrated circuit metrology
US7774726B2 (en) * 2002-06-07 2010-08-10 Cadence Design Systems, Inc. Dummy fill for integrated circuits
US7152215B2 (en) * 2002-06-07 2006-12-19 Praesagus, Inc. Dummy fill for integrated circuits
AU2003274370A1 (en) * 2002-06-07 2003-12-22 Praesagus, Inc. Characterization adn reduction of variation for integrated circuits
US20030229875A1 (en) * 2002-06-07 2003-12-11 Smith Taber H. Use of models in integrated circuit fabrication
US7393755B2 (en) * 2002-06-07 2008-07-01 Cadence Design Systems, Inc. Dummy fill for integrated circuits
US6780736B1 (en) * 2003-06-20 2004-08-24 International Business Machines Corporation Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby
JP2005317929A (en) * 2004-03-29 2005-11-10 Hoya Corp Method of peeling positive resist film, method of manufacturing exposure mask, and resist peeling device
US7372540B2 (en) * 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100681909B1 (en) * 2004-11-30 2007-02-12 유기대 Directional coupler exchange system of railroad
KR100663892B1 (en) * 2005-05-10 2007-01-03 성균관대학교산학협력단 Nano hole forming method and semiconductor device produced by using the same
JP4425239B2 (en) * 2005-05-16 2010-03-03 エーエスエムエル ネザーランズ ビー．ブイ． Lithographic apparatus and device manufacturing method
US7528934B2 (en) * 2005-05-16 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060256311A1 (en) * 2005-05-16 2006-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8048616B2 (en) * 2008-03-12 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Double patterning strategy for contact hole and trench in photolithography
JP5192016B2 (en) * 2010-05-07 2013-05-08 東京エレクトロン株式会社 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
CN102364389A (en) * 2011-10-17 2012-02-29 深圳市华星光电技术有限公司 Manufacturing method based on control over angle of contact hole wall of liquid crystal display device
KR20130107379A (en) 2012-03-21 2013-10-02 삼성디스플레이 주식회사 Display panel and method of manufacturing the same
KR20130129008A (en) 2012-05-18 2013-11-27 삼성디스플레이 주식회사 Display device and fabrication method thereof
KR101983672B1 (en) 2012-11-07 2019-05-30 삼성전자 주식회사 Method for fabricating semiconductor device
US10305029B1 (en) 2017-11-10 2019-05-28 International Business Machines Corporation Image reversal process for tight pitch pillar arrays
KR20220127417A (en) 2021-03-10 2022-09-20 삼성전자주식회사 Method of forming semiconductor device and the device
KR102530029B1 (en) 2022-12-05 2023-05-04 최해용 Screen system for 3D opaque microscope

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS6351639A (en) * 1986-08-20 1988-03-04 Nec Corp Formation of fine pattern
JPH03136233A (en) * 1989-10-20 1991-06-11 Mitsubishi Electric Corp Manufacture of semiconductor device
US5157002A (en) * 1989-11-30 1992-10-20 Hyundai Electronics Industries Co., Ltd. Method for forming a mask pattern for contact hole

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976944A (en) * 1997-02-12 1999-11-02 Harris Corporation Integrated circuit with thin film resistors and a method for co-patterning thin film resistors with different compositions
US6054254A (en) * 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
US5891807A (en) * 1997-09-25 1999-04-06 Siemens Aktiengesellschaft Formation of a bottle shaped trench
US6218057B1 (en) * 1999-04-16 2001-04-17 Lucent Technologies Inc. Lithographic process having sub-wavelength resolution
US6080654A (en) * 1999-08-20 2000-06-27 Advanced Micro Devices, Inc. Simplified method of forming self-aligned vias in a semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6351639A (en) * 1986-08-20 1988-03-04 Nec Corp Formation of fine pattern
JPH03136233A (en) * 1989-10-20 1991-06-11 Mitsubishi Electric Corp Manufacture of semiconductor device
US5157002A (en) * 1989-11-30 1992-10-20 Hyundai Electronics Industries Co., Ltd. Method for forming a mask pattern for contact hole

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 012, no. 268 (E - 638) 27 July 1988 (1988-07-27) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 351 (E - 1108) 5 September 1991 (1991-09-05) *

Also Published As

Publication number Publication date
EP1336193A2 (en) 2003-08-20
AU2002220166A1 (en) 2002-06-03
KR20030051854A (en) 2003-06-25
CN1208810C (en) 2005-06-29
CN1476628A (en) 2004-02-18
JP2004515058A (en) 2004-05-20
KR100831409B1 (en) 2008-05-21
US6358856B1 (en) 2002-03-19
TW519690B (en) 2003-02-01
JP4138482B2 (en) 2008-08-27
WO2002043121A2 (en) 2002-05-30

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