WO2002048434A3 - Gallium nitride materials and methods for forming layers thereof - Google Patents

Gallium nitride materials and methods for forming layers thereof Download PDF

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Publication number
WO2002048434A3
WO2002048434A3 PCT/US2001/048426 US0148426W WO0248434A3 WO 2002048434 A3 WO2002048434 A3 WO 2002048434A3 US 0148426 W US0148426 W US 0148426W WO 0248434 A3 WO0248434 A3 WO 0248434A3
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Prior art keywords
gallium nitride
nitride material
semiconductor materials
methods
material layer
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PCT/US2001/048426
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French (fr)
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WO2002048434A2 (en
Inventor
T Warren Weeks Jr
Edwin L Piner
Thomas Gehrke
Kevin J Linthicum
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Nitronex Corp
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Application filed by Nitronex Corp filed Critical Nitronex Corp
Priority to JP2002550144A priority Critical patent/JP2004524250A/en
Priority to AU2002230868A priority patent/AU2002230868A1/en
Priority to DE60128134T priority patent/DE60128134T2/en
Priority to EP01991120A priority patent/EP1343927B1/en
Publication of WO2002048434A2 publication Critical patent/WO2002048434A2/en
Publication of WO2002048434A3 publication Critical patent/WO2002048434A3/en

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Abstract

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stress in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
PCT/US2001/048426 2000-12-14 2001-12-14 Gallium nitride materials and methods for forming layers thereof WO2002048434A2 (en)

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JP2002550144A JP2004524250A (en) 2000-12-14 2001-12-14 Gallium nitride materials and methods
AU2002230868A AU2002230868A1 (en) 2000-12-14 2001-12-14 Gallium nitride materials and methods for forming layers thereof
DE60128134T DE60128134T2 (en) 2000-12-14 2001-12-14 GALLIUM NITRIDE MATERIALS AND METHOD FOR PRODUCING LAYERS OF THIS MATERIAL
EP01991120A EP1343927B1 (en) 2000-12-14 2001-12-14 Gallium nitride materials and methods for forming layers thereof

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