WO2002049065A1 - Dispositif a faisceau d'electrons et procede de production de dispositifs a semi-conducteur utilisant ledit dispositif a faisceau d'electrons - Google Patents

Dispositif a faisceau d'electrons et procede de production de dispositifs a semi-conducteur utilisant ledit dispositif a faisceau d'electrons Download PDF

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Publication number
WO2002049065A1
WO2002049065A1 PCT/JP2001/009630 JP0109630W WO0249065A1 WO 2002049065 A1 WO2002049065 A1 WO 2002049065A1 JP 0109630 W JP0109630 W JP 0109630W WO 0249065 A1 WO0249065 A1 WO 0249065A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
primary electron
production method
emitting
emitters
Prior art date
Application number
PCT/JP2001/009630
Other languages
English (en)
French (fr)
Inventor
Mamoru Nakasuji
Nobuharu Noji
Tohru Satake
Muneki Hamashima
Masahiro Hatakeyama
Kenji Watanabe
Takao Kato
Hirosi Sobukawa
Tsutomu Karimata
Shoji Yoshikawa
Toshifumi Kimba
Shin Oowada
Mutsumi Saito
Original Assignee
Ebara Corporation
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corporation, Nikon Corporation filed Critical Ebara Corporation
Priority to JP2002550283A priority Critical patent/JP3896080B2/ja
Priority to EP01980965A priority patent/EP1261016A4/en
Publication of WO2002049065A1 publication Critical patent/WO2002049065A1/ja

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/204—Means for introducing and/or outputting objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2816—Length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
PCT/JP2001/009630 2000-12-12 2001-11-02 Dispositif a faisceau d'electrons et procede de production de dispositifs a semi-conducteur utilisant ledit dispositif a faisceau d'electrons WO2002049065A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002550283A JP3896080B2 (ja) 2000-12-12 2001-11-02 電子線装置及び該装置を用いた半導体デバイス製造方法
EP01980965A EP1261016A4 (en) 2000-12-12 2001-11-02 ELECTRON BEAM DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES USING THE ELECTRON BEAM DEVICE

Applications Claiming Priority (32)

Application Number Priority Date Filing Date Title
JP2000378040 2000-12-12
JP2000-378040 2000-12-12
JP2000-388385 2000-12-12
JP2000388385 2000-12-21
JP2001003666 2001-01-11
JP2001-3666 2001-01-11
JP2001005128 2001-01-12
JP2001-5128 2001-01-12
JP2001017901 2001-01-26
JP2001-17901 2001-01-26
JP2001-21183 2001-01-30
JP2001021183 2001-01-30
JP2001023804 2001-01-31
JP2001-23804 2001-01-31
JP2001-26580 2001-02-02
JP2001026580 2001-02-02
JP2001-31906 2001-02-08
JP2001-31901 2001-02-08
JP2001031906 2001-02-08
JP2001031901 2001-02-08
JP2001033599 2001-02-09
JP2001-33599 2001-02-09
JP2001-44964 2001-02-21
JP2001044964 2001-02-21
JP2001-52095 2001-02-27
JP2001052095 2001-02-27
JP2001-73380 2001-03-15
JP2001073380 2001-03-15
JP2001-131238 2001-04-27
JP2001131238 2001-04-27
JP2001-158571 2001-05-28
JP2001158571 2001-05-28

Publications (1)

Publication Number Publication Date
WO2002049065A1 true WO2002049065A1 (fr) 2002-06-20

Family

ID=27585756

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/009630 WO2002049065A1 (fr) 2000-12-12 2001-11-02 Dispositif a faisceau d'electrons et procede de production de dispositifs a semi-conducteur utilisant ledit dispositif a faisceau d'electrons

Country Status (3)

Country Link
US (4) US7095022B2 (ja)
EP (1) EP1261016A4 (ja)
WO (1) WO2002049065A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004158365A (ja) * 2002-11-08 2004-06-03 Keyence Corp 電子顕微鏡、電子顕微鏡の操作方法、電子顕微鏡の操作プログラムおよびコンピュータで読み取り可能な記録媒体
WO2006088141A1 (ja) * 2005-02-17 2006-08-24 Ebara Corporation 電子線装置
JP2006226833A (ja) * 2005-02-17 2006-08-31 Ebara Corp 欠陥検査装置及び欠陥検査装置を用いたデバイス製造方法
US8907278B2 (en) 2010-12-15 2014-12-09 Hitachi High-Technologies Corporation Charged particle beam applied apparatus, and irradiation method
JP2020004586A (ja) * 2018-06-27 2020-01-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム画像取得装置

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US6998611B2 (en) * 2001-09-06 2006-02-14 Ebara Corporation Electron beam apparatus and device manufacturing method using same
DE10303659B4 (de) * 2003-01-23 2005-07-28 Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung mbH Optisches Messverfahren zur Ermittlung von Idealformabweichungen technisch polierter Oberflächen und Präzisionsmessmaschine zur Durchführung des Messverfahrens
US7138629B2 (en) 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
JP2005005125A (ja) * 2003-06-11 2005-01-06 Hitachi High-Technologies Corp 荷電粒子線装置
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
US7300261B2 (en) * 2003-07-18 2007-11-27 Applied Materials, Inc. Vibration damper with nested turbo molecular pump
CN105161393B (zh) * 2003-09-05 2018-03-27 卡尔蔡司显微镜有限责任公司 电子光学排布结构、多电子分束检验系统和方法
US7400759B2 (en) * 2003-12-23 2008-07-15 Eastman Kodak Company Method for testing a plastic sleeve for an image cylinder or a blanket cylinder
US7176459B2 (en) * 2003-12-25 2007-02-13 Ebara Corporation Electron beam apparatus
JP2005249745A (ja) * 2004-03-08 2005-09-15 Ebara Corp 試料表面検査方法および検査装置
JP4500099B2 (ja) * 2004-05-06 2010-07-14 株式会社日立ハイテクノロジーズ 電子顕微鏡装置システム及び電子顕微鏡装置システムを用いた寸法計測方法
US7420164B2 (en) * 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
JP4272121B2 (ja) * 2004-06-23 2009-06-03 株式会社日立ハイテクノロジーズ Ｓｅｍによる立体形状計測方法およびその装置
JP2006040991A (ja) * 2004-07-23 2006-02-09 Hitachi Ltd 半導体装置の評価方法、および製造方法
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KR100895959B1 (ko) * 2005-02-24 2009-05-06 전자빔기술센터 주식회사 초소형 전자칼럼용 하우징
JP5164317B2 (ja) * 2005-08-19 2013-03-21 株式会社日立ハイテクノロジーズ 電子線による検査・計測方法および検査・計測装置
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
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JP4685599B2 (ja) * 2005-11-11 2011-05-18 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
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WO2007086400A1 (ja) * 2006-01-25 2007-08-02 Ebara Corporation 試料表面検査方法及び検査装置
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JP4644617B2 (ja) * 2006-03-23 2011-03-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US7514681B1 (en) * 2006-06-13 2009-04-07 Kla-Tencor Technologies Corporation Electrical process monitoring using mirror-mode electron microscopy
JP4896626B2 (ja) * 2006-08-22 2012-03-14 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
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JP5283842B2 (ja) * 2006-12-18 2013-09-04 キヤノン株式会社 処理装置
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JP5352144B2 (ja) * 2008-07-22 2013-11-27 株式会社荏原製作所 荷電粒子ビーム検査方法及び装置
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US7423267B2 (en) 2008-09-09
US7095022B2 (en) 2006-08-22
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US7129485B2 (en) 2006-10-31
US20070018101A1 (en) 2007-01-25
US20090039262A1 (en) 2009-02-12

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