WO2002049107A3 - Method for stacking semiconductor die within an implanted medical device - Google Patents
Method for stacking semiconductor die within an implanted medical device Download PDFInfo
- Publication number
- WO2002049107A3 WO2002049107A3 PCT/US2001/046292 US0146292W WO0249107A3 WO 2002049107 A3 WO2002049107 A3 WO 2002049107A3 US 0146292 W US0146292 W US 0146292W WO 0249107 A3 WO0249107 A3 WO 0249107A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- medical device
- conductive material
- semiconductor die
- adjacent
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
A method for forming a stackable wafer for use in an implantable device is provided. The method comprises forming an opening extending substantially through the wafer. Thereafter, conductive material is deposited within the opening to substantially fill the opening. A bump is then formed on an upper surface of the wafer adjacent the conductive material, and a contact pad is formed on a lower surface of the wafer adjacent the conductive material. A second wafer formed using substantially the same process may then be stacked on top of the first wafer with the bump of the first wafer being in contact with the contact pad of the second wafer. A soldering process may then be used to couple the adjacent pad and wafer for physically mounting the wafers and providing electrical connectivity therebetween.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/735,826 US6780770B2 (en) | 2000-12-13 | 2000-12-13 | Method for stacking semiconductor die within an implanted medical device |
US09/735,826 | 2000-12-13 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2002049107A2 WO2002049107A2 (en) | 2002-06-20 |
WO2002049107A9 WO2002049107A9 (en) | 2003-02-06 |
WO2002049107A3 true WO2002049107A3 (en) | 2003-04-17 |
Family
ID=24957339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/046292 WO2002049107A2 (en) | 2000-12-13 | 2001-11-08 | Method for stacking semiconductor die within an implanted medical device |
Country Status (2)
Country | Link |
---|---|
US (1) | US6780770B2 (en) |
WO (1) | WO2002049107A2 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3929894B2 (en) * | 2000-10-11 | 2007-06-13 | 三菱電機株式会社 | Location-related information mediation / acquisition method, mediation computer system, and mobile terminal |
US7177698B2 (en) * | 2002-06-28 | 2007-02-13 | Advanced Bionics Corporation | Telemetry system for use with microstimulator |
US20040056350A1 (en) * | 2002-09-24 | 2004-03-25 | Medtronic, Inc. | Electrical connection through nonmetal |
JP4753725B2 (en) * | 2006-01-20 | 2011-08-24 | エルピーダメモリ株式会社 | Multilayer semiconductor device |
US8986253B2 (en) | 2008-01-25 | 2015-03-24 | Tandem Diabetes Care, Inc. | Two chamber pumps and related methods |
US7843072B1 (en) | 2008-08-12 | 2010-11-30 | Amkor Technology, Inc. | Semiconductor package having through holes |
US8408421B2 (en) | 2008-09-16 | 2013-04-02 | Tandem Diabetes Care, Inc. | Flow regulating stopcocks and related methods |
US8650937B2 (en) | 2008-09-19 | 2014-02-18 | Tandem Diabetes Care, Inc. | Solute concentration measurement device and related methods |
US7843052B1 (en) | 2008-11-13 | 2010-11-30 | Amkor Technology, Inc. | Semiconductor devices and fabrication methods thereof |
US20170117214A1 (en) | 2009-01-05 | 2017-04-27 | Amkor Technology, Inc. | Semiconductor device with through-mold via |
CA2769030C (en) | 2009-07-30 | 2016-05-10 | Tandem Diabetes Care, Inc. | Infusion pump system with disposable cartridge having pressure venting and pressure feedback |
US8324511B1 (en) | 2010-04-06 | 2012-12-04 | Amkor Technology, Inc. | Through via nub reveal method and structure |
KR101088825B1 (en) | 2010-07-09 | 2011-12-01 | 주식회사 하이닉스반도체 | Semiconductor chip and stack package having the same |
US8440554B1 (en) | 2010-08-02 | 2013-05-14 | Amkor Technology, Inc. | Through via connected backside embedded circuit features structure and method |
US8487445B1 (en) | 2010-10-05 | 2013-07-16 | Amkor Technology, Inc. | Semiconductor device having through electrodes protruding from dielectric layer |
US8791501B1 (en) | 2010-12-03 | 2014-07-29 | Amkor Technology, Inc. | Integrated passive device structure and method |
US8390130B1 (en) | 2011-01-06 | 2013-03-05 | Amkor Technology, Inc. | Through via recessed reveal structure and method |
US8552548B1 (en) | 2011-11-29 | 2013-10-08 | Amkor Technology, Inc. | Conductive pad on protruding through electrode semiconductor device |
US9048298B1 (en) | 2012-03-29 | 2015-06-02 | Amkor Technology, Inc. | Backside warpage control structure and fabrication method |
US9129943B1 (en) | 2012-03-29 | 2015-09-08 | Amkor Technology, Inc. | Embedded component package and fabrication method |
US9180242B2 (en) | 2012-05-17 | 2015-11-10 | Tandem Diabetes Care, Inc. | Methods and devices for multiple fluid transfer |
US9555186B2 (en) | 2012-06-05 | 2017-01-31 | Tandem Diabetes Care, Inc. | Infusion pump system with disposable cartridge having pressure venting and pressure feedback |
US9173998B2 (en) | 2013-03-14 | 2015-11-03 | Tandem Diabetes Care, Inc. | System and method for detecting occlusions in an infusion pump |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4499655A (en) * | 1981-03-18 | 1985-02-19 | General Electric Company | Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire |
WO1992003848A2 (en) * | 1990-08-28 | 1992-03-05 | Lsi Logic Europe Plc | Stacking of integrated circuits |
US5229647A (en) * | 1991-03-27 | 1993-07-20 | Micron Technology, Inc. | High density data storage using stacked wafers |
US5424245A (en) * | 1994-01-04 | 1995-06-13 | Motorola, Inc. | Method of forming vias through two-sided substrate |
JP2000049277A (en) * | 1998-07-29 | 2000-02-18 | Toshiba Corp | Multi-chip semiconductor device and memory card |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4862249A (en) | 1987-04-17 | 1989-08-29 | Xoc Devices, Inc. | Packaging system for stacking integrated circuits |
US4984358A (en) | 1989-03-10 | 1991-01-15 | Microelectronics And Computer Technology Corporation | Method of assembling stacks of integrated circuit dies |
US5117282A (en) | 1990-10-29 | 1992-05-26 | Harris Corporation | Stacked configuration for integrated circuit devices |
US5343366A (en) | 1992-06-24 | 1994-08-30 | International Business Machines Corporation | Packages for stacked integrated circuit chip cubes |
WO1996013062A1 (en) | 1994-10-19 | 1996-05-02 | Ceram Incorporated | Apparatus and method of manufacturing stacked wafer array |
US5545581A (en) * | 1994-12-06 | 1996-08-13 | International Business Machines Corporation | Plug strap process utilizing selective nitride and oxide etches |
US6014586A (en) | 1995-11-20 | 2000-01-11 | Pacesetter, Inc. | Vertically integrated semiconductor package for an implantable medical device |
US5808360A (en) * | 1996-05-15 | 1998-09-15 | Micron Technology, Inc. | Microbump interconnect for bore semiconductor dice |
US5909633A (en) * | 1996-11-29 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing an electronic component |
US5856915A (en) | 1997-02-26 | 1999-01-05 | Pacesetter, Inc. | Vertically stacked circuit module using a platform having a slot for establishing multi-level connectivity |
US6057175A (en) * | 1997-12-04 | 2000-05-02 | Medtronic, Inc. | Method of making encapsulated package |
US6014320A (en) | 1998-03-30 | 2000-01-11 | Hei, Inc. | High density stacked circuit module |
US6051887A (en) | 1998-08-28 | 2000-04-18 | Medtronic, Inc. | Semiconductor stacked device for implantable medical apparatus |
-
2000
- 2000-12-13 US US09/735,826 patent/US6780770B2/en not_active Expired - Fee Related
-
2001
- 2001-11-08 WO PCT/US2001/046292 patent/WO2002049107A2/en not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4499655A (en) * | 1981-03-18 | 1985-02-19 | General Electric Company | Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire |
WO1992003848A2 (en) * | 1990-08-28 | 1992-03-05 | Lsi Logic Europe Plc | Stacking of integrated circuits |
US5229647A (en) * | 1991-03-27 | 1993-07-20 | Micron Technology, Inc. | High density data storage using stacked wafers |
US5424245A (en) * | 1994-01-04 | 1995-06-13 | Motorola, Inc. | Method of forming vias through two-sided substrate |
JP2000049277A (en) * | 1998-07-29 | 2000-02-18 | Toshiba Corp | Multi-chip semiconductor device and memory card |
US6239495B1 (en) * | 1998-07-29 | 2001-05-29 | Kabushiki Kaisha Toshiba | Multichip semiconductor device and memory card |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 05 14 September 2000 (2000-09-14) * |
Also Published As
Publication number | Publication date |
---|---|
WO2002049107A2 (en) | 2002-06-20 |
US20020123233A1 (en) | 2002-09-05 |
US6780770B2 (en) | 2004-08-24 |
WO2002049107A9 (en) | 2003-02-06 |
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