WO2002050614B1 - Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask - Google Patents

Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask

Info

Publication number
WO2002050614B1
WO2002050614B1 PCT/US2001/047687 US0147687W WO0250614B1 WO 2002050614 B1 WO2002050614 B1 WO 2002050614B1 US 0147687 W US0147687 W US 0147687W WO 0250614 B1 WO0250614 B1 WO 0250614B1
Authority
WO
WIPO (PCT)
Prior art keywords
region
attenuated
structures
downsizing
upsizing
Prior art date
Application number
PCT/US2001/047687
Other languages
French (fr)
Other versions
WO2002050614A3 (en
WO2002050614A2 (en
Inventor
Christophe Pierrat
Youping Zhang
Original Assignee
Numerical Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Numerical Tech Inc filed Critical Numerical Tech Inc
Priority to JP2002551649A priority Critical patent/JP4329002B2/en
Priority to AU2002230726A priority patent/AU2002230726A1/en
Priority to DE60142078T priority patent/DE60142078D1/en
Priority to EP01990970A priority patent/EP1344107B1/en
Publication of WO2002050614A2 publication Critical patent/WO2002050614A2/en
Publication of WO2002050614A3 publication Critical patent/WO2002050614A3/en
Publication of WO2002050614B1 publication Critical patent/WO2002050614B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A structure and method are provided for correcting the optical proximity effects on a tri-tone attenuated phase-shifting mask. An attenuated rim, formed by an opaque region and an attenuated phase-shifting region, can be kept at a predetermined width across the mask or for certain types of structures. Typically, the attenuated rim is made as large as possible to maximize the effect of the attenuated phase-shifting region while still preventing the printing of larger portions of the attenuated phase-shifting region during the development process.

Claims

AMENDED CLAIMS[received by the International Bureau on 24 January 2003 (24.01.2003); original claims 1, 7, 13-14, 20-21, 28, 44 and 56 amended; claim 27 cancelled; remaining claims unchanged (1 1 pages)]
1. (Amended) A photolithographic mask comprising: a plurality of structures, including all structures on the mask for implementing a logic circuit; wherein a subset of the structures include a transparent region, an opaque region, and an attenuated region, the subset of the plurality of structures including all structures in the plurality of structures defined using tri-tone phase shifting, wherein the subset of the structures are corrected for proximity effects, wherein the opaque region and the attenuated region form an attenuated rim having a predetermined width, and wherein the predetermined width is substantially the same in the subset of structures .
2. The photolithographic mask of Claim 1, wherein the transparent region has approximately a 0 degree phase shift.
3. The photolithographic mask of Claim 2, wherein the attenuated region has approximately a 180 degree phase shift.
4. The photolithographic mask of Claim 1, wherein the transparent region has an optical intensity transmission coefficient greater than 0.9.
5. The photolithographic mask of Claim 1, wherein the attenuated region has an optical intensity transmission coefficient between approximately 0.3 and approximately 1.0.
6. The photolithographic mask of Claim 1, wherein the opaque region has an optical intensity transmission coefficient of less than approximately 0.01.
7. (Amended) A method of forming a plurality of structures in a tri-tone attenuated phase-shifting mask, wherein a subset of the structures are formed by a first region and a second region, wherein the first region has a phase shift relative to the second region of 180 degrees, the method comprising: positioning a third region within a boundary for the second region, thereby forming a rim of the second region, wherein the third region prevents the second region from printing, the rim having an associated width; performing optical proximity correction on the subset of structures; and providing a predetermined rim width that is substantially the same for the rim of all structures in the subset of structures .
8. The method of Claim 7, wherein the first region includes a transparent region.
9. The method of Claim 8, wherein the second region includes an attenuated region.
10. The method of Claim 9, wherein the third region includes an opaque region.
11. The method of Claim 10, further including dividing the border for the second region into a plurality of first segments, each first segment including two dissection points.
12. The method of Claim 11, further including projecting a subset of the dissection points onto a border for the third region, thereby forming a plurality of second segments.
13. (Amended) The method of Claim 12, wherein if the optical proximity correction moves a first segment, then a corresponding second segment moves .
14. (Amended) The method of Claim 13, wherein providing a predetermined rim width includes determining a modified border for the third region based on a modified second region formed after the optical proximity correction.
15. The method of Claim 14, wherein determining the modified border for the third region includes downsizing the modified second region and then upsizing the downsized second region.
16. The method of Claim 15, wherein determining the modified border for the third region includes downsizing the modified second region by N times the predetermined rim width and then upsizing the downsized second region by M times the predetermined rim width, wherein N>M.
17. The method of Claim 14, wherein determining the modified border for the third region includes downsizing the modified second region by the predetermined rim width and then eliminating any resulting mousebites in the downsized second region.
18. The method of Claim 15, wherein downsizing and upsizing is a function of the optical proximity correction.
19. The method of Claim 14, wherein determining the modified border for the third region includes adjusting the modified border to minimize any internal side lobe printing.
20. (Amended) The method of Claim 11, wherein the optical proximity correction moves at least one first segment while maintaining a border for the third region.
21. (Amended) The method of Claim 20, wherein providing a predetermined rim width includes determining a modified border for the third region based on a modified second region formed after the optical proximity correction.
22. The method of Claim 21, wherein determining the modified border for the third region includes downsizing the modified second region and then upsizing the downsized second region.
23. The method of Claim 22, wherein determining the modified border for the third region includes downsizing the modified second region by N times the predetermined rim width and then upsizing the downsized second region by M times the predetermined rim width, wherein N>M.
24. The method of Claim 21, wherein determining the modified border for the third region includes downsizing the modified second region by the predetermined rim width and then eliminating any resulting mousebites in the downsized second region.
25. The method of Claim 22, wherein downsizing and upsizing is a function of the optical proximity correction.
26. The method of Claim 21, wherein determining the modified border for the third region includes adjusting the modified border to minimize any internal side lobe printing.
27 . (cancelled)
28. (Amended) A method of fabricating a tri-tone attenuated phase-shifting mask, the method comprising: forming a transparent layer; forming an attenuated layer, wherein a phase shift of the attenuated layer relative to the transparent layer is approximately 180 degrees; simulating optical proximity correction for structures on the mask; patterning the attenuated layer based on the simulating, wherein a transition from a transparent portion of the transparent layer to an attenuated portion of the attenuated layer defines an edge of a structure on the mask; forming an opaque layer; patterning the opaque layer, wherein for each type of structure including an opaque portion, the opaque portion is located a predetermined distance from the edge of the structure .
29. The method of Claim 28, wherein a transition from the opaque portion to the attenuated portion defines an edge of a rim, wherein simulating optical proximity correction includes moving segments of the edge of the rim if corresponding segments of the edge of the structure move.
30. The method of Claim 29, further including downsizing the attenuated portion and then upsizing the attenuated portion, the downsizing and upsizing performed after simulating .
31. The method of Claim 29, further including downsizing the attenuated portion by N times the predetermined distance and then upsizing the attenuated portion by M times the predetermined distance, the downsizing and upsizing performed after simulating, wherein N>M.
32. The method of Claim 29, further including downsizing the attenuated portion by the predetermined distance after simulating.
33. The method of Claim 32, further including eliminating any mousebites from the attenuated portion after downsizing.
34. The method of Claim 30, wherein downsizing and upsizing is a function of the optical proximity correction.
35. The method of Claim 30, wherein downsizing and upsizing include minimizing any internal side lobe printing of the attenuated portion.
36. The method of Claim 28, wherein a transition from the opaque portion to the attenuated portion defines an edge of a rim, wherein simulating optical proximity correction includes moving segments of the edge of the structure while fixing the edge of the rim.
37. The method of Claim 36, further including downsizing the attenuated portion and then upsizing the attenuated portion, the downsizing and upsizing performed after simulating .
38. The method of Claim 36, further including downsizing the attenuated portion by N times the predetermined distance and then upsizing the attenuated portion by M times the predetermined distance, the downsizing and upsizing performed after simulating, wherein N>M.
39. The method of Claim 36, further including downsizing the attenuated portion by the predetermined distance after simulating.
40. The method of Claim 39, further including eliminating any mousebites from the attenuated portion after downsizing.
41. The method of Claim 28, wherein simulating optical proximity correction includes adding optical proximity correction features to the structures.
42. The method of Claim 37, wherein downsizing and upsizing is a function of the optical proximity correction.
43. The method of Claim 37, wherein downsizing and upsizing include minimizing any internal side lobe printing of the attenuated portion.
44. (Amended) A semiconductor mask comprising: a plurality of structures, wherein a subset of the structures include a first region having an optical intensity transmission coefficient greater than 0.9, a second region having an optical intensity transmission coefficient of less than approximately 0.01, and a third region having an optical intensity transmission coefficient between approximately 0.3 and approximately 1.0, wherein the subset of the structures are corrected for proximity effects, wherein the second region and the third region form a rim having a predetermined width, and wherein the predetermined width is substantially the same in the subset of structures.
45. The semiconductor mask of Claim 44, wherein the first region has approximately a 0 degree phase shift.
46. The semiconductor mask of Claim 44, wherein the third region has approximately a 180 degree phase shift.
47. The semiconductor mask of Claim 44, wherein the third region relative to the first region has approximately a 180 degree phase shift.
48. Computer software for simulating a tri-tone attenuated phase-shifting mask including a plurality of structures, a subset of the structures including a transparent region, an opaque region, and an attenuated region, wherein the opaque region and the attenuated region form a rim, the software comprising: means for analyzing optical proximity correction for the subset of the structures; and means for providing a substantially similar rim width in the subset of the structures.
49. The computer software of Claim 48, wherein the means for providing includes: means for dividing a first edge of the attenuated region into a plurality of first segments; means for dividing a second edge of the opaque region into a plurality of second segments, wherein each second segment corresponds to a certain first segment; and means for determining whether a second segment moves with its corresponding first segment during optical proximity correction.
50. The computer software of Claim 48, wherein the means for providing includes : means for downsizing the attenuated region and then upsizing the attenuated region to generate the substantially similar rim width.
51. The computer software of Claim 48, wherein the means for providing includes: means for downsizing the attenuated region to generate the substantially similar rim width.
52. Computer software to convert an integrated circuit layout into an attenuated phase-shifting mask layout for fabricating the integrated circuit, the software comprising: means for identifying a subset of structures in the integrated circuit layout; means for converting the subset of structures into the mask layout, wherein each converted structure includes a transparent region, an opaque region, and an attenuated region, wherein the opaque region and the attenuated region form a rim; means for analyzing optical proximity correction for a plurality of converted structures; and means for providing a substantially similar rim width for the plurality of converted structures.
53. The computer software of Claim 52, wherein the means for providing includes : means for dividing a first edge of the attenuated region into a plurality of first segments; means for dividing a second edge of the opaque region into a plurality of second segments, wherein each second segment corresponds to a certain first segment; and means for determining whether a second segment moves with its corresponding first segment during optical proximity correction. 40
54. The computer software of Claim 52, wherein the means for providing includes : means for downsizing the attenuated region and then upsizing the attenuated region to generate the substantially similar rim width.
55. The computer software of Claim 52, wherein the means for providing includes : means for downsizing the attenuated region to generate the substantially similar rim width.
56. (Amended) A method of fabricating an integrated circuit, the method comprising: illuminating a plurality of photolithographic masks, at least one mask comprising: a plurality of structures, wherein a subset of the structures include a transparent region, an opaque region, and an attenuated region, wherein the subset of the structures are corrected for proximity effects, wherein the opaque region and the attenuated region form an attenuated rim having a predetermined width, and wherein the predetermined width is substantially the same in the subset of structures; focusing an emanating light from the at least one mask onto a photoresist layer provided on a wafer; and developing the photoresist layer to form the integrated circuit .
57. The method of Claim 56, wherein the transparent region has approximately a 0 degree phase shift. 41
58. The method of Claim 56, wherein the attenuated region has approximately a 180 degree phase shift.
59. The method of Claim 56, wherein the transparent region has an optical intensity transmission coefficient greater than 0.9.
60. The method of Claim 56, wherein the attenuated region has an optical intensity transmission coefficient between approximately 0.3 and approximately 1.0.
61. The method of Claim 56, wherein the opaque region has an optical intensity transmission coefficient of less than approximately 0.01.
62. The method of Claim 56, wherein illuminating includes transmitting hard X-rays.
63. The method of Claim 56, wherein illuminating includes transmitting soft X-rays.
64. The method of Claim 56, wherein illuminating includes transmitting one of the following wavelengths: 436 nanometers, 365 nanometers, 248 nanometers, 193 nanometers, 157 nanometers, and 126 nanometers.
65. The method of Claim 56, wherein illuminating includes using on-axis illumination for isolated structures and off-axis illumination for densely patterned structures.
PCT/US2001/047687 2000-12-20 2001-11-30 Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask WO2002050614A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002551649A JP4329002B2 (en) 2000-12-20 2001-11-30 Method for correcting proximity effects in a tri-tone attenuated phase shift mask
AU2002230726A AU2002230726A1 (en) 2000-12-20 2001-11-30 Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
DE60142078T DE60142078D1 (en) 2000-12-20 2001-11-30 METHOD FOR THE CORRECTION OF NEAR EFFECTS IN A HYBRID-STEAMED PHASE SLIDER MASK
EP01990970A EP1344107B1 (en) 2000-12-20 2001-11-30 Method of correcting proximity effects in a tri-tone attenuated phase-shifting mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/746,369 2000-12-20
US09/746,369 US6653026B2 (en) 2000-12-20 2000-12-20 Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask

Publications (3)

Publication Number Publication Date
WO2002050614A2 WO2002050614A2 (en) 2002-06-27
WO2002050614A3 WO2002050614A3 (en) 2003-03-13
WO2002050614B1 true WO2002050614B1 (en) 2003-06-26

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US (2) US6653026B2 (en)
EP (3) EP1344107B1 (en)
JP (1) JP4329002B2 (en)
CN (1) CN100363838C (en)
AU (1) AU2002230726A1 (en)
DE (1) DE60142078D1 (en)
WO (1) WO2002050614A2 (en)

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EP2177949A1 (en) 2010-04-21
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CN100363838C (en) 2008-01-23
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