WO2002053322A3 - System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads - Google Patents

System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads Download PDF

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Publication number
WO2002053322A3
WO2002053322A3 PCT/US2001/048658 US0148658W WO02053322A3 WO 2002053322 A3 WO2002053322 A3 WO 2002053322A3 US 0148658 W US0148658 W US 0148658W WO 02053322 A3 WO02053322 A3 WO 02053322A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
surface area
semiconductor wafers
wafer
reduced surface
Prior art date
Application number
PCT/US2001/048658
Other languages
French (fr)
Other versions
WO2002053322A2 (en
Inventor
John M Boyd
Yehiel Gotkis
Rod Kistler
Original Assignee
Lam Res Corp
John M Boyd
Yehiel Gotkis
Rod Kistler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, John M Boyd, Yehiel Gotkis, Rod Kistler filed Critical Lam Res Corp
Priority to JP2002554262A priority Critical patent/JP2004517479A/en
Priority to AU2002241637A priority patent/AU2002241637A1/en
Priority to EP01988320A priority patent/EP1347861A2/en
Priority to KR10-2003-7008960A priority patent/KR20030066796A/en
Publication of WO2002053322A2 publication Critical patent/WO2002053322A2/en
Publication of WO2002053322A3 publication Critical patent/WO2002053322A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece

Abstract

A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.
PCT/US2001/048658 2001-01-04 2001-12-13 System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads WO2002053322A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002554262A JP2004517479A (en) 2001-01-04 2001-12-13 System and method for polishing and planarizing a semiconductor wafer using a reduced surface area polishing pad and a variable partial pad-wafer overlap technique
AU2002241637A AU2002241637A1 (en) 2001-01-04 2001-12-13 System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads
EP01988320A EP1347861A2 (en) 2001-01-04 2001-12-13 System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads
KR10-2003-7008960A KR20030066796A (en) 2001-01-04 2001-12-13 System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/754,480 US6705930B2 (en) 2000-01-28 2001-01-04 System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US09/754,480 2001-01-04

Publications (2)

Publication Number Publication Date
WO2002053322A2 WO2002053322A2 (en) 2002-07-11
WO2002053322A3 true WO2002053322A3 (en) 2003-05-01

Family

ID=25034976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/048658 WO2002053322A2 (en) 2001-01-04 2001-12-13 System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads

Country Status (8)

Country Link
US (2) US6705930B2 (en)
EP (1) EP1347861A2 (en)
JP (1) JP2004517479A (en)
KR (1) KR20030066796A (en)
CN (1) CN1484567A (en)
AU (1) AU2002241637A1 (en)
TW (1) TW520534B (en)
WO (1) WO2002053322A2 (en)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340326B1 (en) 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
CN100513076C (en) * 2001-05-29 2009-07-15 株式会社荏原制作所 Polishing apparatus and polishing method
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
KR100436861B1 (en) * 2001-08-27 2004-06-30 나노메트릭스코리아 주식회사 Method and apparatus for inspecting defects on polishing pad to be used with chemical mechanical polishing apparatus
US6767428B1 (en) * 2001-12-20 2004-07-27 Lam Research Corporation Method and apparatus for chemical mechanical planarization
US7089782B2 (en) 2003-01-09 2006-08-15 Applied Materials, Inc. Polishing head test station
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
KR101011788B1 (en) 2004-11-01 2011-02-07 가부시키가이샤 에바라 세이사꾸쇼 Top ring, polishing apparatus and polishing method
US20060266383A1 (en) * 2005-05-31 2006-11-30 Texas Instruments Incorporated Systems and methods for removing wafer edge residue and debris using a wafer clean solution
US7998865B2 (en) * 2005-05-31 2011-08-16 Texas Instruments Incorporated Systems and methods for removing wafer edge residue and debris using a residue remover mechanism
JP2007088143A (en) * 2005-09-21 2007-04-05 Elpida Memory Inc Edge grinding device
EP2428557A1 (en) * 2005-12-30 2012-03-14 LAM Research Corporation Cleaning solution
US20070212976A1 (en) * 2006-03-13 2007-09-13 Applied Materials, Inc. Smart polishing media assembly for planarizing substrates
US20070228010A1 (en) * 2006-03-31 2007-10-04 Texas Instruments Incorporated Systems and methods for removing/containing wafer edge defects post liner deposition
CN100400233C (en) * 2006-05-26 2008-07-09 中国科学院上海技术物理研究所 Surface polishing method for protective side edge of group II-VI semiconductor material
CN100522478C (en) * 2006-08-22 2009-08-05 北京有色金属研究总院 Double-side polishing method for gallium phosphide wafer
US7750657B2 (en) * 2007-03-15 2010-07-06 Applied Materials Inc. Polishing head testing with movable pedestal
US7731219B2 (en) * 2007-04-23 2010-06-08 Cequent Trailer Products, Inc. Trailer tongue pivot hinge
US8133097B2 (en) * 2009-05-07 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing apparatus
KR101170760B1 (en) 2009-07-24 2012-08-03 세메스 주식회사 Substrate polishing apparatus
US8545290B2 (en) * 2010-12-08 2013-10-01 Edmond Arzuman Abrahamians Wafer polishing apparatus and method
KR101340190B1 (en) 2011-10-06 2013-12-10 성낙훈 Oil pressure rotor burr remover jig device
WO2013089502A1 (en) * 2011-12-16 2013-06-20 Lg Siltron Inc. Apparatus and method for polishing wafer
JP6239354B2 (en) * 2012-12-04 2017-11-29 不二越機械工業株式会社 Wafer polishing equipment
JP6529210B2 (en) * 2013-04-04 2019-06-12 スリーエム イノベイティブ プロパティズ カンパニー Polishing method using polishing disk and article used therefor
TWI549779B (en) * 2014-01-02 2016-09-21 A slurry transfer device for chemical mechanical grinding
CN103722460B (en) * 2014-01-24 2016-04-06 山东天岳先进材料科技有限公司 A kind of method of grinding end face of silicon carbide crystal and device
US10391522B2 (en) * 2014-02-27 2019-08-27 Bobst Mex Sa Cleaning device for a processing platen press
TWI656944B (en) 2014-05-14 2019-04-21 日商荏原製作所股份有限公司 Polishing apparatus
CN104029112A (en) * 2014-06-23 2014-09-10 昆山永续智财技术服务有限公司 Grinding method of chip reverse process
US9987724B2 (en) * 2014-07-18 2018-06-05 Applied Materials, Inc. Polishing system with pad carrier and conditioning station
SG10201906815XA (en) 2014-08-26 2019-08-27 Ebara Corp Substrate processing apparatus
US10195629B1 (en) * 2014-09-12 2019-02-05 Working Drones, Inc. System, mobile base station and umbilical cabling and tethering (UCAT) apparatus
JP6093741B2 (en) * 2014-10-21 2017-03-08 信越半導体株式会社 Polishing apparatus and wafer polishing method
JP6389449B2 (en) * 2015-08-21 2018-09-12 信越半導体株式会社 Polishing equipment
JP2017121672A (en) * 2016-01-05 2017-07-13 不二越機械工業株式会社 Method for polishing workpiece and method for dressing polishing pad
KR101870701B1 (en) * 2016-08-01 2018-06-25 에스케이실트론 주식회사 Polishing measuring apparatus and method for controlling polishing time thereof, and pllishing control system including the same
WO2018164804A1 (en) * 2017-03-06 2018-09-13 Applied Materials, Inc. Spiral and concentric movement designed for cmp location specific polish (lsp)
JP7049801B2 (en) * 2017-10-12 2022-04-07 株式会社ディスコ Grinding method for workpieces
JP7387471B2 (en) 2020-02-05 2023-11-28 株式会社荏原製作所 Substrate processing equipment and substrate processing method
CN114833715B (en) * 2022-03-01 2024-04-16 浙江富芯微电子科技有限公司 Silicon carbide wafer chemical polishing device and method
CN117124163B (en) * 2023-10-27 2024-01-26 南通恒锐半导体有限公司 IGBT wafer back polishing machine
CN117300904B (en) * 2023-11-28 2024-01-23 苏州博宏源机械制造有限公司 Polishing pad dressing device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0337379A2 (en) * 1988-04-14 1989-10-18 Honeywell Inc. Chemical polishing process
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
JP2000015557A (en) * 1998-04-27 2000-01-18 Ebara Corp Polishing device
EP0992322A1 (en) * 1998-04-06 2000-04-12 Ebara Corporation Polishing device
EP1057591A2 (en) * 1999-05-25 2000-12-06 Applied Materials, Inc. Selective damascene chemical mechanical polishing

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3589078A (en) 1968-07-26 1971-06-29 Itek Corp Surface generating apparatus
US4128968A (en) 1976-09-22 1978-12-12 The Perkin-Elmer Corporation Optical surface polisher
IT1098048B (en) 1977-08-13 1985-08-31 Dollond Aitchison Service APPARATUS AND PROCEDURE FOR SMOOTHING OR POLISHING CURVED SURFACES, IN PARTICULAR LENSES
US4144099A (en) 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
US4197676A (en) 1978-07-17 1980-04-15 Sauerland Franz L Apparatus for automatic lapping control
US4358338A (en) 1980-05-16 1982-11-09 Varian Associates, Inc. End point detection method for physical etching process
WO1982003038A1 (en) 1981-03-10 1982-09-16 Hatano Kouichi One-pass type automatic plane multi-head grinding polishing and cleaning machine
US4462860A (en) 1982-05-24 1984-07-31 At&T Bell Laboratories End point detection
JPS60109859U (en) 1983-12-28 1985-07-25 株式会社　デイスコ Semiconductor wafer surface grinding equipment
JPS60155358A (en) 1984-01-23 1985-08-15 Disco Abrasive Sys Ltd Method and device for grinding surface of semiconductor wafer
JPS61109656A (en) 1984-10-30 1986-05-28 Disco Abrasive Sys Ltd Surface grinding apparatus
US5035087A (en) 1986-12-08 1991-07-30 Sumitomo Electric Industries, Ltd. Surface grinding machine
US5177908A (en) 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5245790A (en) 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
US5265378A (en) 1992-07-10 1993-11-30 Lsi Logic Corporation Detecting the endpoint of chem-mech polishing and resulting semiconductor device
US5310455A (en) 1992-07-10 1994-05-10 Lsi Logic Corporation Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers
JPH0697132A (en) 1992-07-10 1994-04-08 Lsi Logic Corp Mechanochemical polishing apparatus of semiconductor wafer, mounting method of semiconductor-wafer polishing pad to platen of above apparatus and polishing composite pad of above apparatus
JP3370112B2 (en) 1992-10-12 2003-01-27 不二越機械工業株式会社 Wafer polishing equipment
US5389194A (en) 1993-02-05 1995-02-14 Lsi Logic Corporation Methods of cleaning semiconductor substrates after polishing
US5508077A (en) 1993-07-30 1996-04-16 Hmt Technology Corporation Textured disc substrate and method
JPH07111256A (en) 1993-10-13 1995-04-25 Toshiba Corp Semiconductor manufacturing apparatus
ATE310247T1 (en) * 1994-02-19 2005-12-15 Seikagaku Kogyo Co Ltd METHOD FOR DETERMINING NORMAL AGLYCAN, DETERMINATION SET AND METHOD FOR ASSESSING JOINT INFORMATION
US5632873A (en) 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
US5667433A (en) 1995-06-07 1997-09-16 Lsi Logic Corporation Keyed end effector for CMP pad conditioner
US5895270A (en) 1995-06-26 1999-04-20 Texas Instruments Incorporated Chemical mechanical polishing method and apparatus
US5599423A (en) 1995-06-30 1997-02-04 Applied Materials, Inc. Apparatus and method for simulating and optimizing a chemical mechanical polishing system
JP3778594B2 (en) 1995-07-18 2006-05-24 株式会社荏原製作所 Dressing method
JPH0955362A (en) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp Manufacture of integrated circuit for reduction of scratch
US5672095A (en) 1995-09-29 1997-09-30 Intel Corporation Elimination of pad conditioning in a chemical mechanical polishing process
US5709593A (en) 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
KR970042941A (en) 1995-12-29 1997-07-26 베일리 웨인 피 Polishing Compounds for Mechanical and Chemical Polishing Processes
US6010538A (en) 1996-01-11 2000-01-04 Luxtron Corporation In situ technique for monitoring and controlling a process of chemical-mechanical-polishing via a radiative communication link
US6075606A (en) 1996-02-16 2000-06-13 Doan; Trung T. Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
US5948697A (en) 1996-05-23 1999-09-07 Lsi Logic Corporation Catalytic acceleration and electrical bias control of CMP processing
JPH1034529A (en) 1996-07-18 1998-02-10 Speedfam Co Ltd Automatic sizing device
US5868608A (en) 1996-08-13 1999-02-09 Lsi Logic Corporation Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus
US5736427A (en) 1996-10-08 1998-04-07 Micron Technology, Inc. Polishing pad contour indicator for mechanical or chemical-mechanical planarization
JPH10217112A (en) 1997-02-06 1998-08-18 Speedfam Co Ltd Cmp device
JPH10230451A (en) 1997-02-20 1998-09-02 Speedfam Co Ltd Grinding device and work measuring method
JP3231659B2 (en) 1997-04-28 2001-11-26 日本電気株式会社 Automatic polishing equipment
US5975994A (en) 1997-06-11 1999-11-02 Micron Technology, Inc. Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US6004193A (en) 1997-07-17 1999-12-21 Lsi Logic Corporation Dual purpose retaining ring and polishing pad conditioner
US5882251A (en) 1997-08-19 1999-03-16 Lsi Logic Corporation Chemical mechanical polishing pad slurry distribution grooves
US5865666A (en) 1997-08-20 1999-02-02 Lsi Logic Corporation Apparatus and method for polish removing a precise amount of material from a wafer
US5919082A (en) 1997-08-22 1999-07-06 Micron Technology, Inc. Fixed abrasive polishing pad
US6168508B1 (en) * 1997-08-25 2001-01-02 Lsi Logic Corporation Polishing pad surface for improved process control
US5893756A (en) 1997-08-26 1999-04-13 Lsi Logic Corporation Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
US5888120A (en) 1997-09-29 1999-03-30 Lsi Logic Corporation Method and apparatus for chemical mechanical polishing
JPH11114813A (en) 1997-10-07 1999-04-27 Speedfam Co Ltd Polishing system and control method for it
US5957757A (en) 1997-10-30 1999-09-28 Lsi Logic Corporation Conditioning CMP polishing pad using a high pressure fluid
US6102784A (en) 1997-11-05 2000-08-15 Speedfam-Ipec Corporation Method and apparatus for improved gear cleaning assembly in polishing machines
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US5964646A (en) * 1997-11-17 1999-10-12 Strasbaugh Grinding process and apparatus for planarizing sawed wafers
US5975991A (en) 1997-11-26 1999-11-02 Speedfam-Ipec Corporation Method and apparatus for processing workpieces with multiple polishing elements
JPH11179646A (en) 1997-12-19 1999-07-06 Speedfam Co Ltd Cleaning device
US5972162A (en) 1998-01-06 1999-10-26 Speedfam Corporation Wafer polishing with improved end point detection
JPH11204468A (en) 1998-01-09 1999-07-30 Speedfam Co Ltd Surface planarizing apparatus of semiconductor wafer
JPH11204615A (en) 1998-01-19 1999-07-30 Speedfam Co Ltd Wafer loading and unloading mechanism of loading robot
US5997390A (en) 1998-02-02 1999-12-07 Speedfam Corporation Polishing apparatus with improved alignment of polishing plates
US6004196A (en) 1998-02-27 1999-12-21 Micron Technology, Inc. Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates
JP3925580B2 (en) 1998-03-05 2007-06-06 スピードファム株式会社 Wafer processing apparatus and processing method
JPH11254314A (en) 1998-03-10 1999-09-21 Speedfam Co Ltd Work's face grinding device
JPH11300607A (en) 1998-04-16 1999-11-02 Speedfam-Ipec Co Ltd Polishing device
JP2000005988A (en) * 1998-04-24 2000-01-11 Ebara Corp Polishing device
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6106662A (en) 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6227950B1 (en) * 1999-03-08 2001-05-08 Speedfam-Ipec Corporation Dual purpose handoff station for workpiece polishing machine
US6083082A (en) 1999-08-30 2000-07-04 Lam Research Corporation Spindle assembly for force controlled polishing
US6328632B1 (en) * 1999-08-31 2001-12-11 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
US6431959B1 (en) 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US6340326B1 (en) 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0337379A2 (en) * 1988-04-14 1989-10-18 Honeywell Inc. Chemical polishing process
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
EP0992322A1 (en) * 1998-04-06 2000-04-12 Ebara Corporation Polishing device
JP2000015557A (en) * 1998-04-27 2000-01-18 Ebara Corp Polishing device
US6402588B1 (en) * 1998-04-27 2002-06-11 Ebara Corporation Polishing apparatus
EP1057591A2 (en) * 1999-05-25 2000-12-06 Applied Materials, Inc. Selective damascene chemical mechanical polishing

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31) *
See also references of EP1347861A2 *

Also Published As

Publication number Publication date
EP1347861A2 (en) 2003-10-01
US6869337B2 (en) 2005-03-22
US20040166782A1 (en) 2004-08-26
WO2002053322A2 (en) 2002-07-11
CN1484567A (en) 2004-03-24
TW520534B (en) 2003-02-11
KR20030066796A (en) 2003-08-09
US6705930B2 (en) 2004-03-16
JP2004517479A (en) 2004-06-10
AU2002241637A1 (en) 2002-07-16
US20010012751A1 (en) 2001-08-09

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