WO2002061800A3 - A method and system for electrostatic bonding - Google Patents

A method and system for electrostatic bonding Download PDF

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Publication number
WO2002061800A3
WO2002061800A3 PCT/US2001/048277 US0148277W WO02061800A3 WO 2002061800 A3 WO2002061800 A3 WO 2002061800A3 US 0148277 W US0148277 W US 0148277W WO 02061800 A3 WO02061800 A3 WO 02061800A3
Authority
WO
WIPO (PCT)
Prior art keywords
unit
region
charge
electrostatic bonding
electrostatic
Prior art date
Application number
PCT/US2001/048277
Other languages
French (fr)
Other versions
WO2002061800A2 (en
Inventor
Michael D Potter
Original Assignee
Rochester Inst Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rochester Inst Tech filed Critical Rochester Inst Tech
Priority to AU2002251690A priority Critical patent/AU2002251690A1/en
Publication of WO2002061800A2 publication Critical patent/WO2002061800A2/en
Publication of WO2002061800A3 publication Critical patent/WO2002061800A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/002—Aligning microparts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers

Abstract

A method for electrostatic bonding includes placing a first region of a first unit at least adjacent to a second unit. The first region of the first unit has trapped charge. A bond between the first region of the first unit and the first region of the second unit is formed by the electrostatic forces between the trapped charge and induced charge in the first region of the second unit. A system for electrostatic bonding includes a first unit having a first region with trapped charge and a second unit with a first region with induced charge. Electrostatic forces between the trapped charge in the first region of the first unit and the induced charge in the first region of the second unit bond the first and second units together.
PCT/US2001/048277 2000-12-13 2001-12-10 A method and system for electrostatic bonding WO2002061800A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002251690A AU2002251690A1 (en) 2000-12-13 2001-12-10 A method and system for electrostatic bonding

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25531100P 2000-12-13 2000-12-13
US60/255,311 2000-12-13

Publications (2)

Publication Number Publication Date
WO2002061800A2 WO2002061800A2 (en) 2002-08-08
WO2002061800A3 true WO2002061800A3 (en) 2003-04-10

Family

ID=22967745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/048277 WO2002061800A2 (en) 2000-12-13 2001-12-10 A method and system for electrostatic bonding

Country Status (3)

Country Link
US (1) US6638627B2 (en)
AU (1) AU2002251690A1 (en)
WO (1) WO2002061800A2 (en)

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KR100446624B1 (en) * 2002-02-27 2004-09-04 삼성전자주식회사 Anodic bonding structure and fabricating method thereof
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6865407B2 (en) * 2002-07-11 2005-03-08 Optical Sensors, Inc. Calibration technique for non-invasive medical devices
US7042027B2 (en) 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US6903969B2 (en) 2002-08-30 2005-06-07 Micron Technology Inc. One-device non-volatile random access memory cell
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
JP4035074B2 (en) * 2003-03-18 2008-01-16 松下電器産業株式会社 Semiconductor memory circuit layout method
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
WO2005089046A2 (en) * 2004-03-17 2005-09-29 Heckerman Donald A Flat screen display stand
US6967611B2 (en) * 2004-03-19 2005-11-22 Freescale Semiconductor, Inc. Optimized reference voltage generation using switched capacitor scaling for data converters
KR100591254B1 (en) * 2004-04-29 2006-06-19 엘지.필립스 엘시디 주식회사 The organic electro-luminescence device and method for fabricating of the same
US7145186B2 (en) * 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
US7701834B2 (en) * 2005-01-18 2010-04-20 Unity Semiconductor Corporation Movable terminal in a two terminal memory array
JP2007053130A (en) * 2005-08-15 2007-03-01 Matsushita Electric Ind Co Ltd Connection structure and connection method
JP4405451B2 (en) * 2005-09-05 2010-01-27 株式会社東芝 Information recording device
WO2008131088A1 (en) * 2007-04-17 2008-10-30 The University Of Utah Research Foundation Mems devices and systems actuated by an energy field
US20090130447A1 (en) * 2007-11-16 2009-05-21 Nth Tech Corporation Hydrophilic systems and methods thereof
US7728427B2 (en) * 2007-12-07 2010-06-01 Lctank Llc Assembling stacked substrates that can form cylindrical inductors and adjustable transformers
US8159809B2 (en) * 2007-12-07 2012-04-17 METAMEMS Corp. Reconfigurable system that exchanges substrates using coulomb forces to optimize a parameter
US8531848B2 (en) * 2007-12-07 2013-09-10 METAMEMS Corp. Coulomb island and Faraday shield used to create adjustable Coulomb forces
US8018009B2 (en) * 2007-12-07 2011-09-13 METAMEMS Corp. Forming large planar structures from substrates using edge Coulomb forces
US7946174B2 (en) * 2007-12-07 2011-05-24 METAMEMS Corp. Decelerometer formed by levitating a substrate into equilibrium
US7965489B2 (en) * 2007-12-07 2011-06-21 METAMEMS Corp. Using coulomb forces to form 3-D reconfigurable antenna structures
US20090149038A1 (en) * 2007-12-07 2009-06-11 Metamems Llc Forming edge metallic contacts and using coulomb forces to improve ohmic contact
US7863651B2 (en) 2007-12-07 2011-01-04 METAMEMS Corp. Using multiple coulomb islands to reduce voltage stress
US8008070B2 (en) * 2007-12-07 2011-08-30 METAMEMS Corp. Using coulomb forces to study charateristics of fluids and biological samples
US7812336B2 (en) * 2007-12-07 2010-10-12 METAMEMS Corp. Levitating substrate being charged by a non-volatile device and powered by a charged capacitor or bonding wire

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US4504550A (en) * 1982-07-21 1985-03-12 James Frederick John Johnson Releasably mutually-adherent materials
US4626729A (en) * 1984-05-04 1986-12-02 Jacques Lewiner Electroacoustic piezoelectric transducers
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US5132934A (en) * 1989-06-23 1992-07-21 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for storing digital information in the form of stored charges
US5777977A (en) * 1995-08-23 1998-07-07 Sony Corporation Recording and reproducing apparatus

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US4047214A (en) * 1975-09-04 1977-09-06 Westinghouse Electric Corporation Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same
US5231045A (en) * 1988-12-08 1993-07-27 Fujitsu Limited Method of producing semiconductor-on-insulator structure by besol process with charged insulating layers
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JP3005972B2 (en) * 1992-05-19 2000-02-07 株式会社 セル・コーポレーション Threshold operation type semiconductor electrostatic device
JP3383081B2 (en) * 1994-07-12 2003-03-04 三菱電機株式会社 Electronic component manufactured using anodic bonding and method of manufacturing electronic component
US6037797A (en) * 1997-07-11 2000-03-14 Semiconductor Diagnostics, Inc. Measurement of the interface trap charge in an oxide semiconductor layer interface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504550A (en) * 1982-07-21 1985-03-12 James Frederick John Johnson Releasably mutually-adherent materials
US4626729A (en) * 1984-05-04 1986-12-02 Jacques Lewiner Electroacoustic piezoelectric transducers
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US5132934A (en) * 1989-06-23 1992-07-21 The Board Of Trustees Of The Leland Stanford Junior University Method and apparatus for storing digital information in the form of stored charges
US5777977A (en) * 1995-08-23 1998-07-07 Sony Corporation Recording and reproducing apparatus

Also Published As

Publication number Publication date
AU2002251690A1 (en) 2002-08-12
US6638627B2 (en) 2003-10-28
WO2002061800A2 (en) 2002-08-08
US20020072201A1 (en) 2002-06-13

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