WO2002065751A3 - Electron bombarded passive pixel sensor imaging - Google Patents

Electron bombarded passive pixel sensor imaging Download PDF

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Publication number
WO2002065751A3
WO2002065751A3 PCT/US2002/005142 US0205142W WO02065751A3 WO 2002065751 A3 WO2002065751 A3 WO 2002065751A3 US 0205142 W US0205142 W US 0205142W WO 02065751 A3 WO02065751 A3 WO 02065751A3
Authority
WO
WIPO (PCT)
Prior art keywords
passive pixel
pixel sensor
sensor imaging
electron bombarded
vacuum
Prior art date
Application number
PCT/US2002/005142
Other languages
French (fr)
Other versions
WO2002065751A2 (en
Inventor
Verle W Aebi
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Priority to AU2002247181A priority Critical patent/AU2002247181A1/en
Publication of WO2002065751A2 publication Critical patent/WO2002065751A2/en
Publication of WO2002065751A3 publication Critical patent/WO2002065751A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/50057—Imaging and conversion tubes characterised by form of output stage
    • H01J2231/50068—Electrical
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Abstract

A low light level image (140) directed to a photocathode (142) in a vacuum (148) causes release of electron which bombard a CMOS imager (147) including passive pixel sensors which in turn generates an electronic image which is fed out of the vacuum (148) and is used to create useful images corresponding to the low level input image. A camera and other low light imaging devices are described.
PCT/US2002/005142 2001-02-14 2002-02-14 Electron bombarded passive pixel sensor imaging WO2002065751A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002247181A AU2002247181A1 (en) 2001-02-14 2002-02-14 Electron bombarded passive pixel sensor imaging

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/784,621 2001-02-14
US09/784,621 US6657178B2 (en) 1999-07-20 2001-02-14 Electron bombarded passive pixel sensor imaging

Publications (2)

Publication Number Publication Date
WO2002065751A2 WO2002065751A2 (en) 2002-08-22
WO2002065751A3 true WO2002065751A3 (en) 2003-02-27

Family

ID=25133026

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/005142 WO2002065751A2 (en) 2001-02-14 2002-02-14 Electron bombarded passive pixel sensor imaging

Country Status (3)

Country Link
US (1) US6657178B2 (en)
AU (1) AU2002247181A1 (en)
WO (1) WO2002065751A2 (en)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4173575B2 (en) * 1998-01-16 2008-10-29 浜松ホトニクス株式会社 Imaging device
KR100306876B1 (en) * 1999-10-30 2001-11-02 박종섭 High speed image sensor having feedback circuit
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
AU2003253627A1 (en) * 2002-06-06 2003-12-22 The Regents Of The University Of California Highly sensitive imaging camera for space applications including detection of ultrahigh energy cosmic rays
US6791487B1 (en) 2003-03-07 2004-09-14 Honeywell International Inc. Imaging methods and systems for concealed weapon detection
US6943425B2 (en) * 2004-01-23 2005-09-13 Intevac, Inc. Wavelength extension for backthinned silicon image arrays
DE102004036469A1 (en) * 2004-07-28 2006-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Camera module, array based thereon and method for its production
EP1659630A1 (en) * 2004-11-18 2006-05-24 STMicroelectronics (Research & Development) Limited CMOS image sensor
FR2881012B1 (en) * 2005-01-14 2007-04-20 Sagem DAY AND NIGHT VISION DEVICE
US20070001100A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Light reflection for backside illuminated sensor
WO2007020648A2 (en) * 2005-08-17 2007-02-22 Novatrans Group Sa Non-volatile memory device
US7501631B2 (en) * 2005-10-07 2009-03-10 Schick Technologies, Inc. Shielding an imaging array from X-ray noise
US7973380B2 (en) * 2005-11-23 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for providing metal extension in backside illuminated sensor for wafer level testing
US7648851B2 (en) * 2006-03-06 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating backside illuminated image sensor
US8704277B2 (en) * 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor
US7638852B2 (en) 2006-05-09 2009-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US7791170B2 (en) 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
US20080079108A1 (en) * 2006-09-29 2008-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Improving Sensitivity of Backside Illuminated Image Sensors
US8436443B2 (en) * 2006-09-29 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Backside depletion for backside illuminated image sensors
US20080237761A1 (en) * 2007-04-02 2008-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for enhancing light sensitivity for backside illumination image sensor
US7656000B2 (en) * 2007-05-24 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photodetector for backside-illuminated sensor
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
PT2763398T (en) * 2007-12-21 2019-02-06 Photonis Netherlands B V Use of an image sensor array in laser range gated imaging
US20090184638A1 (en) * 2008-01-22 2009-07-23 Micron Technology, Inc. Field emitter image sensor devices, systems, and methods
US20090219403A1 (en) * 2008-02-29 2009-09-03 Sionyx, Inc. Compact passive low-light imaging apparatus
US8048807B2 (en) * 2008-09-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for thinning a substrate
FR2939960B1 (en) * 2008-12-11 2011-01-07 Univ Claude Bernard Lyon PROCESSING METHOD FOR SINGLE PHOTON SENSITIVE SENSOR AND DEVICE USING THE SAME.
EP2474034B1 (en) * 2009-08-31 2014-11-12 Intevac, Inc. Low energy portable low-light camera with wavelength cutoff
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US20110234790A1 (en) * 2010-03-29 2011-09-29 Bruce True Time resolved photoluminescence imaging systems and methods for photovoltaic cell inspection
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US8237125B2 (en) * 2010-04-21 2012-08-07 Hermes Microvision, Inc. Particle detection system
CN106449684B (en) 2010-06-18 2019-09-27 西奥尼克斯公司 High speed photosensitive device and correlation technique
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US10197501B2 (en) 2011-12-12 2019-02-05 Kla-Tencor Corporation Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US9601299B2 (en) 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer
CN103668210A (en) * 2012-09-11 2014-03-26 中芯国际集成电路制造(上海)有限公司 Selective crystal silicon etchant, etching method of wafer silicon chip and application of selective crystal silicon etchant
US9426400B2 (en) 2012-12-10 2016-08-23 Kla-Tencor Corporation Method and apparatus for high speed acquisition of moving images using pulsed illumination
US8878256B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US8878255B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US9478402B2 (en) * 2013-04-01 2016-10-25 Kla-Tencor Corporation Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9347890B2 (en) 2013-12-19 2016-05-24 Kla-Tencor Corporation Low-noise sensor and an inspection system using a low-noise sensor
US9748294B2 (en) 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
US9410901B2 (en) 2014-03-17 2016-08-09 Kla-Tencor Corporation Image sensor, an inspection system and a method of inspecting an article
US9460886B2 (en) * 2014-07-22 2016-10-04 Kla-Tencor Corporation High resolution high quantum efficiency electron bombarded CCD or CMOS imaging sensor
US9767986B2 (en) 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
US9420202B1 (en) 2015-04-01 2016-08-16 Aviation Specialties Unlimited, Inc. Compact intensified camera module
US9860466B2 (en) 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US10748730B2 (en) 2015-05-21 2020-08-18 Kla-Tencor Corporation Photocathode including field emitter array on a silicon substrate with boron layer
US10462391B2 (en) 2015-08-14 2019-10-29 Kla-Tencor Corporation Dark-field inspection using a low-noise sensor
US10313622B2 (en) 2016-04-06 2019-06-04 Kla-Tencor Corporation Dual-column-parallel CCD sensor and inspection systems using a sensor
US10778925B2 (en) 2016-04-06 2020-09-15 Kla-Tencor Corporation Multiple column per channel CCD sensor architecture for inspection and metrology
US10923244B2 (en) * 2017-11-30 2021-02-16 Elbit Systems Of America, Llc Phosphor screen for MEMS image intensifiers
CN108760049B (en) * 2018-05-11 2024-01-05 中国科学院西安光学精密机械研究所 Ultraviolet imager based on ultraviolet electron bombardment active pixel sensor
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
US10943760B2 (en) 2018-10-12 2021-03-09 Kla Corporation Electron gun and electron microscope
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer
US11810747B2 (en) 2020-07-29 2023-11-07 Elbit Systems Of America, Llc Wafer scale enhanced gain electron bombarded CMOS imager

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471378A (en) * 1979-12-31 1984-09-11 American Sterilizer Company Light and particle image intensifier
US6448545B1 (en) * 2000-01-18 2002-09-10 Syncrotronics Corp. Precision endoscopic imaging system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465293A (en) 1966-03-11 1969-09-02 Fairchild Camera Instr Co Detector array controlling mos transistor matrix
FR2548456B1 (en) 1983-06-29 1985-10-25 Comp Generale Electricite RETAINING ADDRESSABLE PHOTODETECTORS
US4822748A (en) 1984-08-20 1989-04-18 California Institute Of Technology Photosensor with enhanced quantum efficiency
FR2574239B1 (en) 1984-11-30 1987-01-23 Labo Electronique Physique IMAGE SENSOR FOR CAMERA OPERATING IN DAY-NIGHT MODE
US4760031A (en) 1986-03-03 1988-07-26 California Institute Of Technology Producing CCD imaging sensor with flashed backside metal film
JP2976242B2 (en) 1989-09-23 1999-11-10 ヴィエルエスアイ ヴィジョン リミテッド Integrated circuit, camera using the integrated circuit, and method for detecting incident light incident on an image sensor manufactured using the integrated circuit technology
US5268612A (en) 1991-07-01 1993-12-07 Intevac, Inc. Feedback limited microchannel plate
US5521639A (en) 1992-04-30 1996-05-28 Sony Corporation Solid-state imaging apparatus including a reference pixel in the optically-black region
US5475227A (en) 1992-12-17 1995-12-12 Intevac, Inc. Hybrid photomultiplier tube with ion deflector
US5326978A (en) 1992-12-17 1994-07-05 Intevac, Inc. Focused electron-bombarded detector
US5373320A (en) 1993-05-18 1994-12-13 Intevac, Inc. Surveillance system having a microchannel image intensifier tube
US5631704A (en) 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
US5625210A (en) 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US5739562A (en) 1995-08-01 1998-04-14 Lucent Technologies Inc. Combined photogate and photodiode active pixel image sensor
US5614744A (en) 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
US5789774A (en) 1996-03-01 1998-08-04 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
US5721425A (en) 1996-03-01 1998-02-24 National Semiconductor Corporation Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471378A (en) * 1979-12-31 1984-09-11 American Sterilizer Company Light and particle image intensifier
US6448545B1 (en) * 2000-01-18 2002-09-10 Syncrotronics Corp. Precision endoscopic imaging system

Also Published As

Publication number Publication date
WO2002065751A2 (en) 2002-08-22
US6657178B2 (en) 2003-12-02
US20010017344A1 (en) 2001-08-30
AU2002247181A1 (en) 2002-08-28

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