WO2002067302A3 - Rhodium-rich oxygen barriers - Google Patents

Rhodium-rich oxygen barriers Download PDF

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Publication number
WO2002067302A3
WO2002067302A3 PCT/US2002/004090 US0204090W WO02067302A3 WO 2002067302 A3 WO2002067302 A3 WO 2002067302A3 US 0204090 W US0204090 W US 0204090W WO 02067302 A3 WO02067302 A3 WO 02067302A3
Authority
WO
WIPO (PCT)
Prior art keywords
rhodium
capacitor
rich oxygen
oxygen barriers
rich structure
Prior art date
Application number
PCT/US2002/004090
Other languages
French (fr)
Other versions
WO2002067302A2 (en
WO2002067302A8 (en
Inventor
Haining Yang
Dan Gealy
Gurtej S Sandhu
Howard Rhodes
Mark Visokay
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to KR1020037010896A priority Critical patent/KR100610303B1/en
Priority to DE60216241T priority patent/DE60216241T2/en
Priority to JP2002566534A priority patent/JP4399521B2/en
Priority to EP02742467A priority patent/EP1368822B1/en
Publication of WO2002067302A2 publication Critical patent/WO2002067302A2/en
Publication of WO2002067302A3 publication Critical patent/WO2002067302A3/en
Publication of WO2002067302A8 publication Critical patent/WO2002067302A8/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

Structures and methods are disclosed for forming capacitors for integrated circuits. The capacitor includes a rhodium-rich structure (24), a rhodium oxide layer (26) in direct contact with the rhodium-rich structure (24), a capacitor dielectric (30) in direct contact with the rhodium oxide layer (26) and a top electrode (40) over the capacitor. The rhodium-rich structure (24) can include rhodium alloys and the capacitor dielectric (30) preferably has a high dielectric constant.
PCT/US2002/004090 2001-02-20 2002-02-11 Rhodium-rich oxygen barriers WO2002067302A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020037010896A KR100610303B1 (en) 2001-02-20 2002-02-11 Rhodium-rich oxygen barriers
DE60216241T DE60216241T2 (en) 2001-02-20 2002-02-11 RHODIUM-RICH OXYGEN BARRIER
JP2002566534A JP4399521B2 (en) 2001-02-20 2002-02-11 Capacitor, capacitor electrode, integrated circuit capacitor, and manufacturing method thereof
EP02742467A EP1368822B1 (en) 2001-02-20 2002-02-11 Rhodium-rich oxygen barriers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,335 US6518610B2 (en) 2001-02-20 2001-02-20 Rhodium-rich oxygen barriers
US09/789,335 2001-02-20

Publications (3)

Publication Number Publication Date
WO2002067302A2 WO2002067302A2 (en) 2002-08-29
WO2002067302A3 true WO2002067302A3 (en) 2003-10-16
WO2002067302A8 WO2002067302A8 (en) 2004-06-03

Family

ID=25147325

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/004090 WO2002067302A2 (en) 2001-02-20 2002-02-11 Rhodium-rich oxygen barriers

Country Status (8)

Country Link
US (4) US6518610B2 (en)
EP (1) EP1368822B1 (en)
JP (1) JP4399521B2 (en)
KR (1) KR100610303B1 (en)
CN (1) CN100373543C (en)
AT (1) ATE346377T1 (en)
DE (1) DE60216241T2 (en)
WO (1) WO2002067302A2 (en)

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Also Published As

Publication number Publication date
EP1368822B1 (en) 2006-11-22
JP2004532512A (en) 2004-10-21
CN100373543C (en) 2008-03-05
US20030102501A1 (en) 2003-06-05
US7038263B2 (en) 2006-05-02
EP1368822A2 (en) 2003-12-10
US6518610B2 (en) 2003-02-11
WO2002067302A2 (en) 2002-08-29
US20040212002A1 (en) 2004-10-28
KR100610303B1 (en) 2006-08-09
KR20030088433A (en) 2003-11-19
US6740554B2 (en) 2004-05-25
DE60216241T2 (en) 2007-04-19
ATE346377T1 (en) 2006-12-15
WO2002067302A8 (en) 2004-06-03
JP4399521B2 (en) 2010-01-20
US20020190303A1 (en) 2002-12-19
CN1518758A (en) 2004-08-04
US20020113260A1 (en) 2002-08-22
DE60216241D1 (en) 2007-01-04
US6781175B2 (en) 2004-08-24

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