WO2002069395B1 - INTEGRATION OF LOW ⊂ THIN FILMS AND Ta INTO Cu DAMASCENE - Google Patents

INTEGRATION OF LOW ⊂ THIN FILMS AND Ta INTO Cu DAMASCENE

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Publication number
WO2002069395B1
WO2002069395B1 PCT/US2002/005470 US0205470W WO02069395B1 WO 2002069395 B1 WO2002069395 B1 WO 2002069395B1 US 0205470 W US0205470 W US 0205470W WO 02069395 B1 WO02069395 B1 WO 02069395B1
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Prior art keywords
polymer
film
polymer film
precursor
moiety
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PCT/US2002/005470
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French (fr)
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WO2002069395A3 (en
WO2002069395A2 (en
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Chung J Lee
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Dielectric Systems Inc
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Priority to AU2002306571A priority Critical patent/AU2002306571A1/en
Publication of WO2002069395A2 publication Critical patent/WO2002069395A2/en
Publication of WO2002069395A3 publication Critical patent/WO2002069395A3/en
Publication of WO2002069395B1 publication Critical patent/WO2002069395B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/025—Polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C08L65/04—Polyxylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
    • C08G2261/342—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms
    • C08G2261/3424—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms non-conjugated, e.g. paracyclophanes or xylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2365/00—Characterised by the use of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Derivatives of such polymers
    • C08J2365/04—Polyxylylenes

Abstract

New precursors and processes to generate fluorinated poly(para-xylylenes) ('PPX') and their chemically modified films suitable for fabrications of integrated circuit ('Ics') of <0.15 µm are disclosed. The films so prepared have low dielectric constants ('⊂') and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of Ics can be assured.

Claims

AMENDED CLAIMS
[received by the International Bureau on 09 May 2003 (09.05.03) original claims 1, 12, 14-18, 22, 24, 28, 30-34, 38-47, 52-56 amended, claims 35, 48 cancelled, claims 57-59 added]
WHAT IS CLAIMED IS:
1. A polymer film prepared from a method comprising: co-polymerizing an intermediate (A) and an intermediate (B); wherein, co-polymerizing precursor intermediates having a feed rate onto a substrate having a substrate temperature is conducted under vacuum or inert atmosphere with a slow system leakage rate, the substrate temperature being below a melting temperature of the intermediate (A); the intermediate (A) is an aromatic group consisting of n' reactive sites with n' unpaired electrons and n' is an integer of at least 2 but is smaller than, or equal to, the maximum number of sites for the sp C substitution in the intermediate (A); the intermediate (B) is a bridging compound consisting of n" reactive sites with n" unpaired electrons; and n" is an integer of at least 2 but is smaller than, or equal to, the maximum number of sites for the sp3C substitution in the intermediate (B); and the polymer film having a thermal stable crystalline form suitable for use as a dielectric thin film in fabrication of an integrated circuit.
2. The polymer film of claim 1 , wherein the vacuum is lower than about 30 mTorrs and the system leakage rate is less than about 2 mTorrs per minute.
3. The polymer film of claim 1 , wherein the inert atmosphere is an atmosphere that is substantially devoid from either a free radical scavenger or a compound containing an active hydrogen.
4. The polymer film of claim 3, wherein the free radical scavenger comprises water and oxygen.
5. The polymer film of claim 3, wherein the active hydrogen comprises a compound containing an -OH, an -SH, or an -KNH group.
26
6. The polymer film of claim 1 , wherein the intermediate (A) is a benzyne.
7. The polymer of claim 1 , wherein the intermediate (A) is a fully-fluorinated benzyne or a partially-fluorinated benzyne.
8. The polymer film of claim 1, wherein the intermediate (B) has a general chemical structure of • C • (Z' Z"), in which each of Z' and Z" is independently H, F, or -CόF5.
9. The polymer film of claim 1, wherein the intermediate (B) is a divalent carbon.
10. The polymer film of claim 1, wherein the intermediate (B) is a carbene.
11. The polymer film of claim 1 , wherein the intermediate (B) is a fully- fluorinated carbene or a partially-fluorinated carbene.
12. An intermediate (A) made by a chemical process of manufacture from a precursor having a general chemical structure of:
(X')m-Ar-(X")n , wherein,
X' and X" are each leaving groups;
Ar is an aromatic group; and n and m are independently 0 or an integer, and (n+m) is at least 2 but can equal to the total sp2C substitutions in the aromatic group Ar; wherein, the chemical process of manufacture is conducted under vacuum or inert atmosphere with a slow system lealcage rate, the system leakage rate is less than about 2 mTorrs per minute; and the intermediate (A) is useful for producing a polymer film having a thermal stable crystalline form suitable for use as a dielectric thin film in fabrication of an integrated circuit.
27
13. The intermediate (A) of claim 12, wherein the leaving group X' or X" is independently a ketene, -COOH, ~Br, -I, -NR2, -~N , -SR, -SO2R, -OR, =N+=N\ -C(O)- N2, or CF3-CF(-O-)-, wherein R is an alkyl or an aromatic group.
14. The intermediate (A) of claim 12, wherein both of the leaving groups X' and X" are -COOH, Br, or I, and n = m = 1.
15. The intermediate (A) of claim 12, wherein the Ar is a phenyl moiety, a naphthenyl moiety, a di-phenyl moiety, an anthracenyl moiety, a phenanthrenyl moiety, or a pyrenyl moiety.
27-A
1 . The intermediate (A) of claim 12, wherein the chemical process of manufacture comprises irradiation, using photons or electron; or cracking, using heat or plasma; or combination thereof.
1 . The intermediate (A) of claim 16, wherein the chemical process of manufacture comprises cracking using a heated reactor.
18. An intermediate (A) made by a chemical process of manufacture from a precursor having a general chemical structure of: (X)m-Ar-(CZ Z Y)n, wherein,
X' and Y are each leaving groups;
Ar is an aromatic group;
Z' and Z" similar or different and individually H, F or -C6Fs;
n and m are similar or different and independently 0 or an integer; and (n+m) is at least 2 but can equal to the total sp2C substitutions in the aromatic group Ar;
wherein,
the chemical process of manufacture is conducted under vacuum or inert atmosphere with a slow system leakage rate, the system leakage rate is less than about 2 mTorrs per minute; and the intermediate (A) is useful for producing a polymer film having a thermal stable crystalline foπn suitable for use as a dielectric thin film in fabrication of an integrated circuit.
19. The intermediate (A) of claim 18, wherein the leaving group X' or Y is independently a ketene, -COOH, -Br, -I, -MR2, -N Rs, -SR, -SO2R, -OR, ^N^N", -C(O)- N2, or CF3-CF(-O-)-, wherein R is an alkyl or an aromatic group.
28
20. The intermediate (A) of claim 18, wherein the Ar is a phenyl moiety, a naphthenyl moiety, a di-phenyl moiety, an anthracenyl moiety, a phenanthrenyl moiety, or a pyrenyl moiety.
21. The intermediate (A) of claim 18, wherein the chemical process of manufacture comprises irradiation, using photons or electron, or cracking, using heat or plasma, or any combination of the above.
22. The intermediate (A) of claim 18, wherein the chemical process of manufacture comprises of an IR - assisted thermal cracking.
23. The intermediate (A) of claim 18, wherein X' is -COOH, -Br, or -I, and n = m = l.
28-A
24. An intermediate (B) made by a chemical process of manufacture from a precursor having a general chemical structure of:
X-C(Z' Z")
wherein,
X is a leaving group; and
Z" and Z" are similar or different and independently H, F, or -CδFs. wherein, the chemical process of manufacture is conducted under vacuum or inert atmosphere with a system leakage rate less than about 2 mTorrs per minute; and the intermediate (B) is useful for producing a polymer film having a thermal stable crystalline form suitable for use as a dielectric thin film in fabrication of an integrated circuit.
25. The intermediate (B) of claim 24, wherein X is a ketene, -C(O)-N2, or CF3- CF(-0-)-.
26. The intermediate (B) of claim 24, wherein the chemical process of manufacture comprises irradiation, using photons or electron, or cracking, using heat or plasma, or any combination of the above.
27. The intermediate (B) of claim 26, wherein the chemical process comprises of thermal cracking using a heated reactor.
29
28. A polymer film suitable for use as a dielectric thin film in fabrication of an integrated circuit, wherein,
the polymer film is prepared from polymerization or co-polymerization of at least two reactive precursor intermediates,
co-polymerizing of precursor intermediates having a feed rate onto a substrate having a substrate temperature is conducted under vacuum or inert atmosphere with a system leakage rate less than about 2 mTorrs per minute; and
the polymer film comprises fully- or partially- fluorinated polymers; and
the polymer film comprises a thermal stable crystalline form.
29. The polymer film of claim 28, wherein the fluorinated polymers is a polymer or copolymer of -CF2C6H CF2-,-CF2C6F4CF2-, -C6H4CF2-, or -C6F4CF2-.
30. The polymer film of claim 28, wherein the film is heterogeneous film comprising of semicrystalline polymers.
1. The polymer film of claim 30, further comprising a layer of amorphous polymer.
32. The polymer film of claim 28, wherein the film is homogeneous film.
33. The polymer film of claim 28, wherein the film is suitable for fabrication of optical devices.
29-A
34. A semicrystalline polymer made by a chemical process of manufacture comprising: polymerizing precursor intermediates having a feed rate onto a substrate having a substrate temperature in a deposition chamber; wherein, the precursor has a general chemical structure comprising;
(X')m-Ar-(CZ'Z"Y)n, wherein,
Ar is an aromatic group;
X' and Y are leaving groups and are a ketene, -COOH, -Br, -I, -NR.>, -l^R;), - SR, -SO2R, -OR, =KΗN-, -C(O)-N2, (CF3-CF(0))-, wherein R is an alkyl or aromatic group;
Z' and Z" are similar or different and are H, F or -CQFS; n and m are similar or different and independently 0 or an integer, and (n + m) is at least 2 and can equal the total sp2C substitutions in the aromatic group, Ar; the semicrystalline polymer is prepared under a vacuum with a low system- leakage-rate, an inert atmosphere, or both; and the semicrystalline polymer comprises a thermal stable crystalline form suitable for use as a dielectric thin film in fabrication of an integrated circuit.
35. Cancel.
36. A semicrystalline polymer of claim 34, wherein both the leaving groups X' and Y is -COOH, Br, or I, and n = m = 1.
30
37. A semicrystalline polymer of claim 34, wherein the Ar is a phenyl moiety, a naphthenyl moiety, a di-phenyl moiety, an anthracenyl moiety, a phenanthrenyl moiety, or a pyrenyl moiety.
38. The semicrystalline polymer of claim 34, wherein the chemical process of manufacture further comprises: generating precursor intermediates by irradiation with photons or electron; cracking with heat or plasma; or any combination thereof.
39. The semicrystalline polymer of claim 34, wherein the chemical process of manufacture further comprises: generating precursor intermediates by thermal cracking with a heated reactor.
40. The semicrystalline polymer of claim 34, wherein the semicrystalline polymer is at least 30% crystalline.
41. The semicrystalline polymer of claim 34, wherein the semicrystalline polymer is defined by polymer chains oriented at no more than 45 degrees to the xy-plane of the dielectric thin film.
30-A
42. The semicrystalline polymer of claim 34, wherein the thermal stable crystalline form is not altered more than 15% after being heated at temperatures greater than 400 °C.
43. The semicrystalline polymer of claim 34, wherein the chemical process of manufacture further comprises post-annealing the semicrystalline polymer at a high temperature ranging from 350 to 400 °C, the post-annealing step forming a film having more than 30% to 50% crystalline polymers in the thermal stable crystalline.
44. The semicrystalline polymer of claim 43, wherein the film is PPX-F or PF- PPX.
45. The semicrystalline polymer of claim 43, wherein the crystalline polymers have their polymer chains orientated at less than 45 degrees to the xy-plane of the film.
46. The semicrystalline polymer of claim 34, wherein the feed rate for precursor intermediates is less than 10 mmoles/min per meter2 of the substrate.
47. The semicrystalline polymer of claim 34, wherein the substrate temperature is less than -20°C, but no less than -65°C.
48. Cancel.
49. A method of making polymer thin films comprising:
providing a precursor vapor under a vacuum or inert atmosphere;
generating reactive precursor intermediates from the precursor vapor; and
transporting the reactive precursor intermediates to a substrate for film growth;
wherein,
31 there are at least two different reactive precursor intermediates;
the reactive precursor intermediates have a feed rate onto the substrate;
the substrate has a substrate temperature;
the polymer film comprises a thermal stable crystalline form that is suitable for use as a dielectric thin film in fabrication of an integrated circuit.
50. The method of claim 49, wherein the vacuum is lower than about 30 mTorrs and the system leakage rate is less than about 2 mTorrs per minute.
31-A
51. The method of claim 49, wherein the inert atmosphere is an atmosphere that is substantially devoid from either a free radical scavenger or a compound containing an active hydrogen.
52. The method of claim 51 , wherein the free radical scavenger comprises water and oxygen.
53. The method of claim 51 , wherein the active hydrogen comprises a compound containing an -OH, an -SH, or an -R H group.
54. A system for deposition of thin films comprising:
a precursor reservoir;
a reactor thereto for producing reactive precursor intermediates;
a diffusor;
a cold trap; and
a pump;
wherein,
the system is useful for providing a precursor vapor under a vacuum or inert atmosphere, then generating reactive precursor intermediates from the precursor vapor, and transporting the reactive precursor intermediates to a substrate for film growth;
wherein,
there are at least two different reactive precursor inteπnediates;
the reactive precursor intermediates have a feed rate onto the substrate;
32 the substrate has a substrate temperature;
the polymer film comprises a thermal stable crystalline form that is suitable for use as a dielectric thin film in fabrication of an integrated circuit
55. A. thin film transistor ("TFT") in active matrix liquid crystal display ("AMLCD") comprising the polymer film of claim 1.
56, A color filter in an active matrix liquid crystal display ("AMLCD") comprising the polymer film of claim 1.
32-A
57. The semicrystalline polymer of claim 45, wherein the crystalline polymers have their polymer chains orientated at less than 20 degrees to the xy-plane of the film.
58. The semicrystalline polymer of claim 34, wherein the feed rate for precursor intermediates is less than 10 mmoles/ in per meter2 of the substrate.
59. The semicrystalline polymer of claim 34, wherein the substrate temperature is -30°C.
32-B
PCT/US2002/005470 2001-02-26 2002-02-22 INTEGRATION OF LOW ⊂ THIN FILMS AND Ta INTO Cu DAMASCENE WO2002069395A2 (en)

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