WO2002084631A1 - Procede de transfert d'element, procede de disposition d'element mettant en oeuvre ce procede et procede de production d'un appareil d'affichage d'image - Google Patents

Procede de transfert d'element, procede de disposition d'element mettant en oeuvre ce procede et procede de production d'un appareil d'affichage d'image Download PDF

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Publication number
WO2002084631A1
WO2002084631A1 PCT/JP2002/003549 JP0203549W WO02084631A1 WO 2002084631 A1 WO2002084631 A1 WO 2002084631A1 JP 0203549 W JP0203549 W JP 0203549W WO 02084631 A1 WO02084631 A1 WO 02084631A1
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WO
WIPO (PCT)
Prior art keywords
substrate
resin layer
adhesive resin
transferred
arrangmenet
Prior art date
Application number
PCT/JP2002/003549
Other languages
English (en)
French (fr)
Inventor
Kunihiko Hayashi
Yoshiyuki Yanagisawa
Toshiaki Iwafuchi
Hisashi Ohba
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001112401A external-priority patent/JP3994681B2/ja
Priority claimed from JP2001169857A external-priority patent/JP3890921B2/ja
Priority claimed from JP2001194890A external-priority patent/JP3959988B2/ja
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to KR1020027016821A priority Critical patent/KR100853410B1/ko
Priority to US10/297,872 priority patent/US6872635B2/en
Publication of WO2002084631A1 publication Critical patent/WO2002084631A1/ja
Priority to US11/023,834 priority patent/US7195687B2/en
Priority to US11/079,742 priority patent/US7205212B2/en
Priority to US11/079,815 priority patent/US7205214B2/en
Priority to US11/079,780 priority patent/US7205213B2/en
Priority to US11/551,971 priority patent/US7763139B2/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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US10/297,872 US6872635B2 (en) 2001-04-11 2002-04-09 Device transferring method, and device arraying method and image display unit fabricating method using the same
US11/023,834 US7195687B2 (en) 2001-04-11 2004-12-22 Device transferring method, and device arraying method and image display unit fabricating method using the same
US11/079,742 US7205212B2 (en) 2001-04-11 2005-03-14 Device transferring method
US11/079,815 US7205214B2 (en) 2001-04-11 2005-03-14 Device transferring method
US11/079,780 US7205213B2 (en) 2001-04-11 2005-03-14 Device transferring method
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KR102321518B1 (ko) 2021-02-08 2021-11-04 (주)라이타이저 감광성 수지를 이용한 led칩 전사 장치
KR102467677B1 (ko) 2021-02-08 2022-11-17 (주)라이타이저 Led칩 전사용 수지를 이용한 led칩 전사 방법
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TWI783530B (zh) * 2021-06-18 2022-11-11 李志雄 暫時接著積層體及應用彼之晶圓薄化製備方法

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