WO2002084755A3 - Keepers for mram electrodes - Google Patents

Keepers for mram electrodes Download PDF

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Publication number
WO2002084755A3
WO2002084755A3 PCT/US2002/004771 US0204771W WO02084755A3 WO 2002084755 A3 WO2002084755 A3 WO 2002084755A3 US 0204771 W US0204771 W US 0204771W WO 02084755 A3 WO02084755 A3 WO 02084755A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
top electrode
bit
mram
keeper
Prior art date
Application number
PCT/US2002/004771
Other languages
French (fr)
Other versions
WO2002084755A2 (en
Inventor
Mark E Tuttle
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to DE60222095T priority Critical patent/DE60222095T2/en
Priority to AU2002306525A priority patent/AU2002306525A1/en
Priority to JP2002581597A priority patent/JP4186046B2/en
Priority to EP02761855A priority patent/EP1364417B1/en
Priority to KR1020037011279A priority patent/KR100608248B1/en
Publication of WO2002084755A2 publication Critical patent/WO2002084755A2/en
Publication of WO2002084755A3 publication Critical patent/WO2002084755A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Abstract

A magnetic memory device, such as a magnetic random access memory (MRAM), and a method for forming same are described herein. The magnetic memory device includes a bit (24), such as a tunneling magneto-resistance (TMR) structure or a giant magneto-resistance (GMR) structure, which is sensitive to magnetic fields and stores data. The bit (24) is preferably disposed between a top electrode (74) with a magnetic keeper (52, 54) and a lower conducting line (12). The top electrode (74) is formed by a damascene process and is preferably formed from copper. The magnetic keeper (52, 54) of the top electrode (74) includes a magnetic material layer (54) (e.g., Co-Fe) and can also include a barrier layer (52) (e.g., Ta). In addition, the magnetic keeper stack (52, 54) can be in contact with one, two, or three surfaces of the top electrode (74) that face away from the bit (24).
PCT/US2002/004771 2001-02-28 2002-02-14 Keepers for mram electrodes WO2002084755A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE60222095T DE60222095T2 (en) 2001-02-28 2002-02-14 LOCK BLOCK FOR MRAM ELECTRODES
AU2002306525A AU2002306525A1 (en) 2001-02-28 2002-02-14 Keepers for mram electrodes
JP2002581597A JP4186046B2 (en) 2001-02-28 2002-02-14 Protective structure for MRAM electrode
EP02761855A EP1364417B1 (en) 2001-02-28 2002-02-14 Keepers for mram electrodes
KR1020037011279A KR100608248B1 (en) 2001-02-28 2002-02-14 Keepers for mram electrodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/796,326 2001-02-28
US09/796,326 US6413788B1 (en) 2001-02-28 2001-02-28 Keepers for MRAM electrodes

Publications (2)

Publication Number Publication Date
WO2002084755A2 WO2002084755A2 (en) 2002-10-24
WO2002084755A3 true WO2002084755A3 (en) 2003-08-07

Family

ID=25167915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/004771 WO2002084755A2 (en) 2001-02-28 2002-02-14 Keepers for mram electrodes

Country Status (9)

Country Link
US (2) US6413788B1 (en)
EP (1) EP1364417B1 (en)
JP (1) JP4186046B2 (en)
KR (1) KR100608248B1 (en)
AT (1) ATE371958T1 (en)
AU (1) AU2002306525A1 (en)
DE (1) DE60222095T2 (en)
ES (1) ES2289136T3 (en)
WO (1) WO2002084755A2 (en)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734559B1 (en) * 1999-09-17 2004-05-11 Advanced Micro Devices, Inc. Self-aligned semiconductor interconnect barrier and manufacturing method therefor
US6617689B1 (en) * 2000-08-31 2003-09-09 Micron Technology, Inc. Metal line and method of suppressing void formation therein
DE10043947A1 (en) * 2000-09-06 2002-04-04 Infineon Technologies Ag Current conductor of integrated circuit, producing magnetic field with transitive effect, includes recess modifying field produced
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
US6475812B2 (en) * 2001-03-09 2002-11-05 Hewlett Packard Company Method for fabricating cladding layer in top conductor
US6780652B2 (en) * 2001-03-15 2004-08-24 Micron Technology, Inc. Self-aligned MRAM contact and method of fabrication
JP5013494B2 (en) * 2001-04-06 2012-08-29 ルネサスエレクトロニクス株式会社 Manufacturing method of magnetic memory
KR100403313B1 (en) * 2001-05-22 2003-10-30 주식회사 하이닉스반도체 Magnetic random access memory using bipolar junction transistor and Method for forming the same
JP4088052B2 (en) * 2001-07-17 2008-05-21 株式会社東芝 Manufacturing method of semiconductor device
US6525957B1 (en) * 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6548849B1 (en) * 2002-01-31 2003-04-15 Sharp Laboratories Of America, Inc. Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
US6665205B2 (en) * 2002-02-20 2003-12-16 Hewlett-Packard Development Company, Lp. Shared global word line magnetic random access memory
US6812040B2 (en) * 2002-03-12 2004-11-02 Freescale Semiconductor, Inc. Method of fabricating a self-aligned via contact for a magnetic memory element
US6627932B1 (en) * 2002-04-11 2003-09-30 Micron Technology, Inc. Magnetoresistive memory device
US6780653B2 (en) 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6770491B2 (en) * 2002-08-07 2004-08-03 Micron Technology, Inc. Magnetoresistive memory and method of manufacturing the same
US20040032010A1 (en) * 2002-08-14 2004-02-19 Kools Jacques Constant Stefan Amorphous soft magnetic shielding and keeper for MRAM devices
US6914805B2 (en) * 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
US7018937B2 (en) 2002-08-29 2006-03-28 Micron Technology, Inc. Compositions for removal of processing byproducts and method for using same
US6740948B2 (en) * 2002-08-30 2004-05-25 Hewlett-Packard Development Company, L.P. Magnetic shielding for reducing magnetic interference
JP2004128229A (en) * 2002-10-02 2004-04-22 Nec Corp Magnetic memory and its manufacture
KR100515053B1 (en) * 2002-10-02 2005-09-14 삼성전자주식회사 Magnetic memory device implementing read operation tolerant of bitline clamp voltage(VREF)
JP3906139B2 (en) * 2002-10-16 2007-04-18 株式会社東芝 Magnetic random access memory
US6740947B1 (en) * 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor
JP3906145B2 (en) * 2002-11-22 2007-04-18 株式会社東芝 Magnetic random access memory
US6885074B2 (en) * 2002-11-27 2005-04-26 Freescale Semiconductor, Inc. Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
US6943038B2 (en) * 2002-12-19 2005-09-13 Freescale Semiconductor, Inc. Method for fabricating a flux concentrating system for use in a magnetoelectronics device
US6845038B1 (en) 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7126200B2 (en) * 2003-02-18 2006-10-24 Micron Technology, Inc. Integrated circuits with contemporaneously formed array electrodes and logic interconnects
US20040175845A1 (en) * 2003-03-03 2004-09-09 Molla Jaynal A. Method of forming a flux concentrating layer of a magnetic device
US7042032B2 (en) * 2003-03-27 2006-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation
US6921953B2 (en) * 2003-04-09 2005-07-26 Micron Technology, Inc. Self-aligned, low-resistance, efficient MRAM read/write conductors
US7020009B2 (en) * 2003-05-14 2006-03-28 Macronix International Co., Ltd. Bistable magnetic device using soft magnetic intermediary material
US6784091B1 (en) 2003-06-05 2004-08-31 International Business Machines Corporation Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices
US7183130B2 (en) * 2003-07-29 2007-02-27 International Business Machines Corporation Magnetic random access memory and method of fabricating thereof
US6927075B2 (en) * 2003-08-25 2005-08-09 Headway Technologies, Inc. Magnetic memory with self-aligned magnetic keeper structure
US7078239B2 (en) 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
US6900491B2 (en) * 2003-10-06 2005-05-31 Hewlett-Packard Development Company, L.P. Magnetic memory
US6990012B2 (en) * 2003-10-07 2006-01-24 Hewlett-Packard Development Company, L.P. Magnetic memory device
JP4868431B2 (en) * 2003-10-10 2012-02-01 Ｔｄｋ株式会社 Magnetic storage cell and magnetic memory device
US20050095855A1 (en) * 2003-11-05 2005-05-05 D'urso John J. Compositions and methods for the electroless deposition of NiFe on a work piece
US7083988B2 (en) * 2004-01-26 2006-08-01 Micron Technology, Inc. Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
US20060039183A1 (en) * 2004-05-21 2006-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-sensing level MRAM structures
JP2005340366A (en) * 2004-05-25 2005-12-08 Toshiba Corp Magnetic storage device and its manufacturing method
US7344896B2 (en) * 2004-07-26 2008-03-18 Infineon Technologies Ag Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof
KR100660539B1 (en) * 2004-07-29 2006-12-22 삼성전자주식회사 Magnetic memory devices and methods of forming the same
US20060022286A1 (en) * 2004-07-30 2006-02-02 Rainer Leuschner Ferromagnetic liner for conductive lines of magnetic memory cells
US7714441B2 (en) * 2004-08-09 2010-05-11 Lam Research Barrier layer configurations and methods for processing microelectronic topographies having barrier layers
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
US7075807B2 (en) * 2004-08-18 2006-07-11 Infineon Technologies Ag Magnetic memory with static magnetic offset field
US7083990B1 (en) * 2005-01-28 2006-08-01 Infineon Technologies Ag Method of fabricating MRAM cells
US7444740B1 (en) 2005-01-31 2008-11-04 Western Digital (Fremont), Llc Damascene process for fabricating poles in recording heads
US8019022B2 (en) * 2007-03-22 2011-09-13 Mediatek Inc. Jitter-tolerance-enhanced CDR using a GDCO-based phase detector
US20090026618A1 (en) * 2007-07-25 2009-01-29 Samsung Electronics Co., Ltd. Semiconductor device including interlayer interconnecting structures and methods of forming the same
US8015692B1 (en) 2007-11-07 2011-09-13 Western Digital (Fremont), Llc Method for providing a perpendicular magnetic recording (PMR) head
US7782660B2 (en) * 2008-03-20 2010-08-24 International Business Machines Corporation Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
US8273582B2 (en) 2009-07-09 2012-09-25 Crocus Technologies Method for use in making electronic devices having thin-film magnetic components
US8513749B2 (en) * 2010-01-14 2013-08-20 Qualcomm Incorporated Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
US8304863B2 (en) 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
US8313947B2 (en) * 2010-06-18 2012-11-20 Freescale Semiconductor, Inc. Method for testing a contact structure
US8686522B2 (en) * 2011-10-13 2014-04-01 International Business Machines Corporation Semiconductor trench inductors and transformers
US9817087B2 (en) 2012-03-14 2017-11-14 Analog Devices, Inc. Sensor with magnetroesitive and/or thin film element abutting shorting bars and a method of manufacture thereof
EP2973726A4 (en) * 2013-03-11 2016-11-30 Crocus Technology Inc Magnetic random access memory cells with isolating liners
US9299924B1 (en) 2015-06-29 2016-03-29 International Business Machines Corporation Injection pillar definition for line MRAM by a self-aligned sidewall transfer
KR20180068595A (en) * 2016-12-14 2018-06-22 삼성전자주식회사 Semiconductor device
US9917137B1 (en) 2017-01-11 2018-03-13 International Business Machines Corporation Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects
US10403424B2 (en) * 2017-06-09 2019-09-03 Texas Instruments Incorporated Method to form magnetic core for integrated magnetic devices
US10700263B2 (en) 2018-02-01 2020-06-30 International Business Machines Corporation Annealed seed layer for magnetic random access memory
US10741748B2 (en) 2018-06-25 2020-08-11 International Business Machines Corporation Back end of line metallization structures
RU2694289C1 (en) * 2018-09-28 2019-07-11 Общество с ограниченной ответственностью "КРОКУС НАНОЭЛЕКТРОНИКА" Method of forming copper distribution with a thick cobalt-containing insert in the structure of devices operating based on magnetic tunnel junction
US20220180911A1 (en) * 2020-12-07 2022-06-09 International Business Machines Corporation External magnetic bottom contact structure for mram
US11942126B2 (en) * 2021-05-26 2024-03-26 International Business Machines Corporation Selectively biasing magnetoresistive random-access memory cells
CN113540343A (en) * 2021-06-08 2021-10-22 波平方科技(杭州)有限公司 Method for manufacturing nonvolatile magnetic memory and magnetic memory unit

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
WO2000010172A2 (en) * 1998-08-12 2000-02-24 Infineon Technologies Ag Storage cell array and corresponding production method
JP2000090658A (en) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd Magnetic memory element
WO2000072324A1 (en) * 1999-05-25 2000-11-30 Honeywell Inc. Local shielding for memory cells
WO2001071777A2 (en) * 2000-03-21 2001-09-27 Motorola, Inc. Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
US20020034094A1 (en) * 2000-07-27 2002-03-21 Yoshiaki Saito Magnetic memory
WO2002041367A2 (en) * 2000-11-15 2002-05-23 Motorola, Inc., A Corporation Of The State Of Delaware Self-aligned magnetic clad write line and method thereof
EP1239489A1 (en) * 2001-03-09 2002-09-11 Hewlett-Packard Company Method for fabricating cladding layer in top conductor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623035A (en) 1968-02-02 1971-11-23 Fuji Electric Co Ltd Magnetic memory matrix and process for its production
US3816909A (en) 1969-04-30 1974-06-18 Hitachi Chemical Co Ltd Method of making a wire memory plane
US3623032A (en) 1970-02-16 1971-11-23 Honeywell Inc Keeper configuration for a thin-film memory
US3947831A (en) 1972-12-11 1976-03-30 Kokusai Denshin Denwa Kabushiki Kaisha Word arrangement matrix memory of high bit density having a magnetic flux keeper
US4158891A (en) 1975-08-18 1979-06-19 Honeywell Information Systems Inc. Transparent tri state latch
US4044330A (en) 1976-03-30 1977-08-23 Honeywell Information Systems, Inc. Power strobing to achieve a tri state
US4060794A (en) 1976-03-31 1977-11-29 Honeywell Information Systems Inc. Apparatus and method for generating timing signals for latched type memories
US4455626A (en) 1983-03-21 1984-06-19 Honeywell Inc. Thin film memory with magnetoresistive read-out
US4780848A (en) 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US4731757A (en) 1986-06-27 1988-03-15 Honeywell Inc. Magnetoresistive memory including thin film storage cells having tapered ends
US5547599A (en) 1989-03-17 1996-08-20 Raytheon Company Ferrite/epoxy film
US5039655A (en) 1989-07-28 1991-08-13 Ampex Corporation Thin film memory device having superconductor keeper for eliminating magnetic domain creep
US5064499A (en) * 1990-04-09 1991-11-12 Honeywell Inc. Inductively sensed magnetic memory manufacturing method
US5140549A (en) 1990-04-09 1992-08-18 Honeywell Inc. Inductively sensed magnetic memory
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5496759A (en) 1994-12-29 1996-03-05 Honeywell Inc. Highly producible magnetoresistive RAM process
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US5569617A (en) 1995-12-21 1996-10-29 Honeywell Inc. Method of making integrated spacer for magnetoresistive RAM
US5861328A (en) 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
US5902690A (en) 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
US6048739A (en) * 1997-12-18 2000-04-11 Honeywell Inc. Method of manufacturing a high density magnetic memory device
US5956267A (en) 1997-12-18 1999-09-21 Honeywell Inc Self-aligned wordline keeper and method of manufacture therefor
TW454187B (en) 1998-09-30 2001-09-11 Siemens Ag Magnetoresistive memory with low current density
US6165803A (en) 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000010172A2 (en) * 1998-08-12 2000-02-24 Infineon Technologies Ag Storage cell array and corresponding production method
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP2000090658A (en) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd Magnetic memory element
WO2000072324A1 (en) * 1999-05-25 2000-11-30 Honeywell Inc. Local shielding for memory cells
WO2001071777A2 (en) * 2000-03-21 2001-09-27 Motorola, Inc. Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
US20020034094A1 (en) * 2000-07-27 2002-03-21 Yoshiaki Saito Magnetic memory
WO2002041367A2 (en) * 2000-11-15 2002-05-23 Motorola, Inc., A Corporation Of The State Of Delaware Self-aligned magnetic clad write line and method thereof
EP1239489A1 (en) * 2001-03-09 2002-09-11 Hewlett-Packard Company Method for fabricating cladding layer in top conductor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 06 22 September 2000 (2000-09-22) *

Also Published As

Publication number Publication date
EP1364417B1 (en) 2007-08-29
DE60222095T2 (en) 2008-05-29
AU2002306525A1 (en) 2002-10-28
US6417561B1 (en) 2002-07-09
ATE371958T1 (en) 2007-09-15
JP2004527123A (en) 2004-09-02
KR20030084951A (en) 2003-11-01
JP4186046B2 (en) 2008-11-26
DE60222095D1 (en) 2007-10-11
US6413788B1 (en) 2002-07-02
ES2289136T3 (en) 2008-02-01
EP1364417A2 (en) 2003-11-26
KR100608248B1 (en) 2006-08-04
WO2002084755A2 (en) 2002-10-24

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