WO2002089217A2 - Halbleiterchip für die optoelektronik - Google Patents
Halbleiterchip für die optoelektronik Download PDFInfo
- Publication number
- WO2002089217A2 WO2002089217A2 PCT/DE2002/001530 DE0201530W WO02089217A2 WO 2002089217 A2 WO2002089217 A2 WO 2002089217A2 DE 0201530 W DE0201530 W DE 0201530W WO 02089217 A2 WO02089217 A2 WO 02089217A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor chip
- window layer
- layer
- active zone
- structured
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Definitions
- the invention relates to a semiconductor chip for optoelectronics with a substrate on which a semiconductor layer sequence with a photon emitting active zone and with a subsequent window layer is arranged.
- the invention further relates to a method for producing a semiconductor chip for optoelectronics, in which a semiconductor layer sequence with an active zone and a subsequent window layer is first applied to a substrate.
- Such a semiconductor chip and a method for its production are known from EP 0 551 001 A1.
- the known semiconductor chip has a light-generating region formed on a substrate, on which there is a thick window layer.
- the thickness of the window layer is dimensioned such that a light beam totally reflected at the top of the window layer can pass through or exit through a side face of the window layer.
- a disadvantage of the known semiconductor chip is the large thickness of the window layer, since layers of large thickness are difficult to produce epitaxially.
- the known window layer has a high coupling-out efficiency only if the critical angle is not too large.
- the critical angle for total reflection is about 26 °. This leads to the fact that in the case of cube-shaped semiconductor chips typically only about 4% of the photons generated couple out of the semiconductor chip.
- a disadvantage of the known semiconductor chip is that the contacting of the active zones is relatively complex since the contacting takes place laterally on the hemispherical radiation coupling elements.
- a semiconductor chip is known from US Pat. No. 5,087,949 A in which the substrate itself has the function of a window layer.
- the substrate has laterally beveled side surfaces, so that a light beam emanating from an active zone occurs as possible on the side surface at an angle of incidence that is smaller than the critical angle for total reflection.
- this solution is not applicable in every case, since often no suitable substrates are available.
- the object of the invention is to create a semiconductor chip with the highest possible coupling efficiency.
- the window layer is structured in a region in the manner of a Fresnel lens, so that radiation emitted by the active zone strikes interfaces in the region from the window layer to the surrounding medium, which are inclined towards the active zone ,
- the thickness of the window layer can be kept relatively small by the formation of the structured window layer or the fresnel-like lens arranged above the active zone.
- the fresnel-like lens or the layered structured window layer can perform the function of a lens with any cross-sectional profile, that is to say also a hemisphere lens that is ideal for decoupling, in particular with regard to the angles at which the rays emitted by the active zone onto the interface between the window layer and the surrounding medium.
- a lens with any cross-sectional profile that is to say also a hemisphere lens that is ideal for decoupling, in particular with regard to the angles at which the rays emitted by the active zone onto the interface between the window layer and the surrounding medium.
- the invention is also based on the object of specifying a method for producing the semiconductor chip provided with a window layer according to the invention.
- this object is achieved by a production process with the following process steps:
- photoresist structures with beveled flanks can be created.
- this exposure technique it is possible to apply a photoresist layer with the structured surface like a Fresnel lens to a window layer generate and transfer this to the underlying window layer using an anisotropic etching process.
- FIG. 1 shows a cross-sectional view through a semiconductor chip for optoelectronics with a structured window layer arranged after an active zone in the manner of a Fresnel lens;
- FIG. 2 shows a top view of a semiconductor chip with a central contact area
- FIG. 3 shows a cross section through the semiconductor chip from FIG. 2;
- FIG. 4 shows a top view of a semiconductor chip with a laterally arranged contact area
- FIG. 5 shows a cross section through the semiconductor chip from FIG. 4.
- FIG. 1 shows a cross section through a semiconductor chip 1, which has a substrate 2, on which a semiconductor layer sequence 3 with an active layer 4 is applied.
- the semiconductor chip shown in FIG. 1 is a semiconductor chip for a light-emitting diode.
- the photon-emitting region of the active layer 4 is limited to an active zone 5 with a diameter d A.
- a window layer 6 is located above the active zone 5.
- the window layer 6 has the shape of a stepped, fresnel lens-like structured window layer.
- the structured window layer in the manner of a Fresnel lens has the function of a hemispherical lens 7 centered on the active zone 5 with regard to the radiation coupling out.
- the term centered lens in this context should be understood to mean that the main optical axis of the lens is defined by the The center of the active zone 5 runs.
- the cross-sectional profile of this imaginary or imaginary lens is indicated in FIG. 1 by a dashed line.
- d jj and n ⁇ are the diameter and the refractive index of the imaginary lens 7 and the window layer 6, respectively, and n ⁇ the refractive index of the medium applied to the lens 7 and the window layer 6, respectively.
- the diameter d A of the active zone 5 must therefore be smaller than the diameter djj of the lens 7 which is reduced in the ratio of the refractive index n j v j of the surrounding material to the refractive index n ⁇ of the material of the lens 7.
- the cross-sectional profile of the imaginary lens 7 can be projected into the region of the window layer with the aid of a central projection centered on the center of the active zone 5.
- the projections of the steps of the window layer onto the active layer 4 can be essentially equidistant in cross section. It can also be used for the geometric construction of the spaces 6 filled in with respect to the imaginary lens 7 between two cone shells, the apex of which is at the same point within the active one Zone and which are inscribed in a hemisphere of diameter d ⁇ , are projected in sections towards the center of the hemisphere.
- the circular segments of the cross-sectional profile of the lens 7 are expediently approximated by triangles, the length of which decreases with increasing gradient with respect to the active layer, so that essentially a window layer 6 is formed which, apart from the (microscopic) surface structure, has a macroscopically flat surface.
- the resulting window layer 6 with the cross section of a polygon then largely functions as a hemisphere 7 with regard to the coupling out of radiation of the radiation generated in the active layer 5.
- FIGS. 2 and 3 show a top view and a cross section through a semiconductor chip designed according to FIG. 1.
- the exemplary embodiment shown in FIGS. 2 and 3 is a light-emitting diode 8, on the window layer 6 of which a central contact point 9 is formed.
- Decoupling efficiency is understood to mean the ratio of the number of photons generated in the active zone 5 to the number of photons leaving the light-emitting diode 8. If all of the photons generated can leave the light-emitting diode 8, this would result in a coupling-out efficiency of 100%.
- the reasons for the reduced coupling-out efficiency are, on the one hand, that the photons emitted into the lower hemisphere are absorbed in the substrate 2. The maximum achievable coupling efficiency is therefore 50%.
- ⁇ d ⁇ 3 CQ P- s: ⁇ h- 1 rr ⁇ . tr tr SD CQ rr ⁇ 3 ⁇ P- X 3 ⁇ tr P- rr
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10291889T DE10291889B4 (de) | 2001-04-27 | 2002-04-26 | Halbleiterchip für die Optoelektronik |
US10/476,121 US7145181B2 (en) | 2001-04-27 | 2002-04-26 | Semiconductor chip for optoelectronics |
JP2002586410A JP2004524710A (ja) | 2001-04-27 | 2002-04-26 | オプトエレクトロニクス用半導体チップ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10120703A DE10120703A1 (de) | 2001-04-27 | 2001-04-27 | Halbleiterchip für die Optoelektronik |
DE10120703.4 | 2001-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002089217A2 true WO2002089217A2 (de) | 2002-11-07 |
WO2002089217A3 WO2002089217A3 (de) | 2003-01-09 |
Family
ID=7682952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/001530 WO2002089217A2 (de) | 2001-04-27 | 2002-04-26 | Halbleiterchip für die optoelektronik |
Country Status (5)
Country | Link |
---|---|
US (1) | US7145181B2 (de) |
JP (1) | JP2004524710A (de) |
DE (2) | DE10120703A1 (de) |
TW (1) | TW541725B (de) |
WO (1) | WO2002089217A2 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003083943A2 (de) * | 2002-04-02 | 2003-10-09 | G.L.I. Global Light Industries Gmbh | Homogen paralleles licht emittierende leuchtdiode |
JP2006523957A (ja) * | 2003-04-15 | 2006-10-19 | ルミナス ディバイシズ インコーポレイテッド | 発光素子 |
US8154039B2 (en) | 2004-09-22 | 2012-04-10 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8624289B2 (en) | 2007-09-28 | 2014-01-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
DE102005035722B9 (de) * | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102006024220A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
GB0610468D0 (en) * | 2006-05-26 | 2006-07-05 | Rolls Royce Plc | A method of manufacturing a component |
CN101499507B (zh) * | 2008-02-01 | 2011-11-09 | 富准精密工业(深圳)有限公司 | 发光二极管 |
DE102008045331A1 (de) * | 2008-09-01 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US7906795B2 (en) | 2009-05-08 | 2011-03-15 | Epistar Corporation | Light-emitting device |
US8450767B2 (en) | 2009-05-08 | 2013-05-28 | Epistar Corporation | Light-emitting device |
DE102010027875A1 (de) * | 2010-04-16 | 2011-10-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
TWI513038B (zh) * | 2011-01-12 | 2015-12-11 | Epistar Corp | 發光裝置 |
CN103969740A (zh) * | 2013-01-31 | 2014-08-06 | 鸿富锦精密工业(深圳)有限公司 | 扩散镜片、光源模组及面光源 |
DE102015116595A1 (de) | 2015-09-30 | 2017-03-30 | Osram Opto Semiconductors Gmbh | Bauelement mit einem Licht emittierenden Halbleiterchip |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2727508A1 (de) * | 1977-06-18 | 1979-01-04 | Siemens Ag | Lichtemittierende diode mit hohem wirkungsgrad |
DE2755433A1 (de) * | 1977-12-13 | 1979-06-21 | Licentia Gmbh | Strahlungsemittierende halbleiterdiode |
EP0101368A2 (de) * | 1982-08-10 | 1984-02-22 | Thomson-Csf | Monolitische Vereinigung einer Lumineszenzdiode mit Linsen |
DE19709228A1 (de) * | 1996-03-22 | 1997-09-25 | Hewlett Packard Co | Geordnete Grenzflächentexturierung für ein lichtemittierendes Bauelement |
US5696389A (en) * | 1994-03-15 | 1997-12-09 | Kabushiki Kaisha Toshiba | Light-emitting semiconductor device |
DE19911717A1 (de) * | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
JP2001028456A (ja) * | 1999-07-14 | 2001-01-30 | Victor Co Of Japan Ltd | 半導体発光素子 |
WO2001080322A2 (de) * | 2000-04-19 | 2001-10-25 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip und verfahren zu dessen herstellung |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63283174A (ja) * | 1987-05-15 | 1988-11-21 | Omron Tateisi Electronics Co | 発光ダイオ−ド |
JPS6442870A (en) * | 1987-08-10 | 1989-02-15 | Nec Corp | Manufacture of optical semiconductor element |
JP2708183B2 (ja) * | 1988-07-21 | 1998-02-04 | シャープ株式会社 | 化合物半導体発光素子 |
JPH02119275A (ja) * | 1988-10-28 | 1990-05-07 | Nec Corp | 発光ダイオード |
US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
US5101454A (en) * | 1991-02-20 | 1992-03-31 | At&T Bell Laboratories | Light emitting diode with multifaceted reflector to increase coupling efficiency and alignment tolerance |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
GB2277998A (en) * | 1993-05-13 | 1994-11-16 | Marconi Gec Ltd | Mask and apparatus for producing microlenses |
JPH06338630A (ja) * | 1993-05-28 | 1994-12-06 | Omron Corp | 半導体発光素子、並びに当該発光素子を用いた光学検知装置、光学的情報処理装置、光結合装置及び発光装置 |
DE19600306C1 (de) * | 1996-01-05 | 1997-04-10 | Siemens Ag | Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung |
US5926320A (en) * | 1997-05-29 | 1999-07-20 | Teldedyne Lighting And Display Products, Inc. | Ring-lens system for efficient beam formation |
US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
-
2001
- 2001-04-27 DE DE10120703A patent/DE10120703A1/de not_active Withdrawn
-
2002
- 2002-04-24 TW TW091108465A patent/TW541725B/zh not_active IP Right Cessation
- 2002-04-26 JP JP2002586410A patent/JP2004524710A/ja active Pending
- 2002-04-26 DE DE10291889T patent/DE10291889B4/de not_active Expired - Fee Related
- 2002-04-26 WO PCT/DE2002/001530 patent/WO2002089217A2/de active Application Filing
- 2002-04-26 US US10/476,121 patent/US7145181B2/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2727508A1 (de) * | 1977-06-18 | 1979-01-04 | Siemens Ag | Lichtemittierende diode mit hohem wirkungsgrad |
DE2755433A1 (de) * | 1977-12-13 | 1979-06-21 | Licentia Gmbh | Strahlungsemittierende halbleiterdiode |
EP0101368A2 (de) * | 1982-08-10 | 1984-02-22 | Thomson-Csf | Monolitische Vereinigung einer Lumineszenzdiode mit Linsen |
US5696389A (en) * | 1994-03-15 | 1997-12-09 | Kabushiki Kaisha Toshiba | Light-emitting semiconductor device |
DE19709228A1 (de) * | 1996-03-22 | 1997-09-25 | Hewlett Packard Co | Geordnete Grenzflächentexturierung für ein lichtemittierendes Bauelement |
DE19911717A1 (de) * | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
JP2001028456A (ja) * | 1999-07-14 | 2001-01-30 | Victor Co Of Japan Ltd | 半導体発光素子 |
WO2001080322A2 (de) * | 2000-04-19 | 2001-10-25 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip und verfahren zu dessen herstellung |
Non-Patent Citations (2)
Title |
---|
OPPLIGER Y ET AL: "One-step 3D shaping using a gray-tone mask" MICROELECTRONIC ENGINEERING, 1994, Bd. 23, Seiten 449-454, XP000615045 ISSN: 0167-9317 * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 16, 8. Mai 2001 (2001-05-08) -& JP 2001 028456 A (VICTOR CO LTD), 30. Januar 2001 (2001-01-30) * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003083943A2 (de) * | 2002-04-02 | 2003-10-09 | G.L.I. Global Light Industries Gmbh | Homogen paralleles licht emittierende leuchtdiode |
WO2003083943A3 (de) * | 2002-04-02 | 2004-07-01 | G L I Global Light Ind Gmbh | Homogen paralleles licht emittierende leuchtdiode |
JP2006523957A (ja) * | 2003-04-15 | 2006-10-19 | ルミナス ディバイシズ インコーポレイテッド | 発光素子 |
US8154039B2 (en) | 2004-09-22 | 2012-04-10 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8183588B2 (en) | 2004-09-22 | 2012-05-22 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8692267B2 (en) | 2004-09-22 | 2014-04-08 | Cree, Inc. | High efficiency Group III nitride LED with lenticular surface |
US8878209B2 (en) | 2004-09-22 | 2014-11-04 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US8624289B2 (en) | 2007-09-28 | 2014-01-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
Also Published As
Publication number | Publication date |
---|---|
DE10120703A1 (de) | 2002-10-31 |
TW541725B (en) | 2003-07-11 |
JP2004524710A (ja) | 2004-08-12 |
US20040195641A1 (en) | 2004-10-07 |
US7145181B2 (en) | 2006-12-05 |
DE10291889D2 (de) | 2004-04-15 |
WO2002089217A3 (de) | 2003-01-09 |
DE10291889B4 (de) | 2013-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002089217A2 (de) | Halbleiterchip für die optoelektronik | |
EP2290714A1 (de) | Lichtemissionsdiode mit Oberflächenstrukturierung | |
DE112015002819T5 (de) | Organisches, elektrolumineszierendes Element, Grundmaterial und Licht-emittierende Vorrichtung | |
DE102018111637A1 (de) | Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement | |
DE69935129T2 (de) | Ein verfahren zur herstellung von spiegeln in polymerwellenleitern | |
DE60201358T2 (de) | Methode zur Korrektur einer Photomaske, sowie Methode zur Herstellung eines Halbleiterelements | |
DE2539206A1 (de) | Verfahren zur automatischen justierung von halbleiterscheiben | |
DE2911848A1 (de) | Anordnung zur ausbildung von mustern | |
DE112017004597B4 (de) | Licht-emittierendes Modul mit Quantenstruktur | |
DE102010020789B4 (de) | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung | |
DE3528582C2 (de) | ||
WO2018233870A1 (de) | Optoelektronisches bauelement | |
DE19780364C2 (de) | Optische Karte | |
DE112018001137T5 (de) | Halbleitervorrichtung und verfahren zu ihrer herstellung | |
DE3105934A1 (de) | Metallskala und verfahren zu ihrer herstellung | |
DE3016498A1 (de) | Lichtempfindliche halbleiterbauelemente | |
DE4440821A1 (de) | Photomaske | |
DE3415831C2 (de) | ||
DE102018129191B4 (de) | Verfahren zum herstellen einer leuchtvorrichtung und eine leuchtvorrichtung mit einem lichtemittierenden optoelektronischen bauelement | |
DE19521390C2 (de) | Fokussierungsverfahren in der Photolithographie | |
WO2012041925A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements | |
DE19954853A1 (de) | Unterseitenemittierender Oberflächenemissionslaser mit Vertikalresonator (VCSEL) | |
DE102018123254A1 (de) | 3D-Drucker | |
DE102004017131B4 (de) | Lithographiemaske für die Herstellung von Halbleiterbauelementen | |
DE102018105910B4 (de) | Verfahren zur Herstellung einer Vielzahl von Konversionselementen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): DE JP US |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): DE JP US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2002586410 Country of ref document: JP |
|
REF | Corresponds to |
Ref document number: 10291889 Country of ref document: DE Date of ref document: 20040415 Kind code of ref document: P |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10291889 Country of ref document: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10476121 Country of ref document: US |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8607 |