WO2002101465A3 - Phase conflict resolution for photolithographic masks - Google Patents

Phase conflict resolution for photolithographic masks Download PDF

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Publication number
WO2002101465A3
WO2002101465A3 PCT/US2002/018306 US0218306W WO02101465A3 WO 2002101465 A3 WO2002101465 A3 WO 2002101465A3 US 0218306 W US0218306 W US 0218306W WO 02101465 A3 WO02101465 A3 WO 02101465A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase shift
windows
phase
values
regions
Prior art date
Application number
PCT/US2002/018306
Other languages
French (fr)
Other versions
WO2002101465A2 (en
Inventor
Christophe Pierrat
Michel Luc Cote
Original Assignee
Numerical Tech Inc
Christophe Pierrat
Michel Luc Cote
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Numerical Tech Inc, Christophe Pierrat, Michel Luc Cote filed Critical Numerical Tech Inc
Priority to JP2003504164A priority Critical patent/JP4505218B2/en
Priority to AU2002310374A priority patent/AU2002310374A1/en
Priority to EP02737445.3A priority patent/EP1393129B1/en
Publication of WO2002101465A2 publication Critical patent/WO2002101465A2/en
Publication of WO2002101465A3 publication Critical patent/WO2002101465A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Abstract

A photolithographic mask used for defining a layer in an integrated circuit, or other work piece, where the layer comprises a pattern including a plurality of features to be implemented with phase shifting in phase shift regions is laid out including for patterns comprising high density, small dimension features, and for 'full shift' patterns. The method includes identifying cutting areas for phase shift regions based on characteristics of the pattern. Next, the process cuts the phase shift regions in selected ones of the cutting areas to define phase shift windows, and assigns phase values to the phase shift windows. The phase shift values assigned comprise ζ and υ, so that destructive interference is caused in transitions between adjacent phase shift windows having respective phase shift values of ζ and υ. In the preferred embodiment, ζ is equal to approximately υ + 180 degrees. Results of the cutting and assigning steps are stored in a computer readable medium, used for manufacturing a mask, and used for manufacturing an integrated circuit. By identifying the cutting areas based on characteristics of the pattern to be formed, the problem of dividing phase shift regions into phase shift windows, and assigning phase shift values to the windows is simplified.
PCT/US2002/018306 2001-06-08 2002-06-07 Phase conflict resolution for photolithographic masks WO2002101465A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003504164A JP4505218B2 (en) 2001-06-08 2002-06-07 Phase conflict solution for photolithography masks
AU2002310374A AU2002310374A1 (en) 2001-06-08 2002-06-07 Phase conflict resolution for photolithographic masks
EP02737445.3A EP1393129B1 (en) 2001-06-08 2002-06-07 Phase conflict resolution for photolithographic masks

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US29678801P 2001-06-08 2001-06-08
US60/296,788 2001-06-08
US30414201P 2001-07-10 2001-07-10
US60/304,142 2001-07-10
US09/932,239 2001-08-17
US09/932,239 US7083879B2 (en) 2001-06-08 2001-08-17 Phase conflict resolution for photolithographic masks

Publications (2)

Publication Number Publication Date
WO2002101465A2 WO2002101465A2 (en) 2002-12-19
WO2002101465A3 true WO2002101465A3 (en) 2003-11-13

Family

ID=27404461

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/018306 WO2002101465A2 (en) 2001-06-08 2002-06-07 Phase conflict resolution for photolithographic masks

Country Status (6)

Country Link
US (2) US7083879B2 (en)
EP (1) EP1393129B1 (en)
JP (1) JP4505218B2 (en)
CN (1) CN100535745C (en)
AU (1) AU2002310374A1 (en)
WO (1) WO2002101465A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3501688B2 (en) * 1999-07-01 2004-03-02 キヤノン株式会社 Exposure method, exposure apparatus, and device manufacturing method
WO2002009152A2 (en) * 2000-07-26 2002-01-31 Infineon Technologies Ag Method for determining the ability to project images of integrated semiconductor switching circuits onto alternating phase masks
US7110525B1 (en) 2001-06-25 2006-09-19 Toby Heller Agent training sensitive call routing system
US9818136B1 (en) 2003-02-05 2017-11-14 Steven M. Hoffberg System and method for determining contingent relevance
TWI244590B (en) * 2003-06-30 2005-12-01 Taiwan Semiconductor Mfg System and method for reticle field layout design advanced features are not supported in freeware version
TWI266152B (en) * 2003-12-30 2006-11-11 Mosel Vitelic Inc Mask and method of using the same
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US7475379B2 (en) * 2004-06-23 2009-01-06 International Business Machines Corporation Methods and systems for layout and routing using alternating aperture phase shift masks
US7421676B2 (en) * 2004-09-15 2008-09-02 Chartered Semiconductor Manufacturing Ltd. System and method for phase shift assignment
US7493589B2 (en) * 2005-12-29 2009-02-17 Asml Masktools B.V. Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process
JP5331195B2 (en) * 2009-10-19 2013-10-30 パナソニック株式会社 Semiconductor device
US8563199B2 (en) * 2011-10-07 2013-10-22 Seagate Technology Llc Forming a bridging feature using chromeless phase-shift lithography

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1523165A (en) 1974-08-03 1978-08-31 Matsushita Electric Ind Co Ltd Fourier-transform holography by pseudo-random phase shifting
US4456371A (en) 1982-06-30 1984-06-26 International Business Machines Corporation Optical projection printing threshold leveling arrangement
JPH0690505B2 (en) 1985-09-20 1994-11-14 株式会社日立製作所 Photo mask
JP2650962B2 (en) 1988-05-11 1997-09-10 株式会社日立製作所 Exposure method, element forming method, and semiconductor element manufacturing method
JP2710967B2 (en) 1988-11-22 1998-02-10 株式会社日立製作所 Manufacturing method of integrated circuit device
EP0395425B1 (en) 1989-04-28 1996-10-16 Fujitsu Limited Mask, mask producing method and pattern forming method using mask
US5328807A (en) 1990-06-11 1994-07-12 Hitichi, Ltd. Method of forming a pattern
TW198129B (en) 1990-06-21 1993-01-11 Matsushita Electron Co Ltd
JP3094439B2 (en) * 1990-11-21 2000-10-03 株式会社ニコン Exposure method
JP2974821B2 (en) 1991-06-19 1999-11-10 沖電気工業株式会社 Pattern formation method
KR100256619B1 (en) 1991-07-12 2000-06-01 사와무라 시코 Method of forming resist pattern and photomask thereor
US5364716A (en) 1991-09-27 1994-11-15 Fujitsu Limited Pattern exposing method using phase shift and mask used therefor
JPH05197128A (en) 1991-10-01 1993-08-06 Oki Electric Ind Co Ltd Photo-mask and pattern forming method therewith
JPH05142749A (en) * 1991-11-25 1993-06-11 Toshiba Corp Mask for exposure
US5334542A (en) 1991-11-27 1994-08-02 Oki Electric Industry Co., Ltd. Method of forming T-shaped electrode
JP3148770B2 (en) 1992-03-27 2001-03-26 日本電信電話株式会社 Photomask and mask pattern data processing method
JPH0611826A (en) * 1992-04-28 1994-01-21 Mitsubishi Electric Corp Photomask and its production
US5308741A (en) 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
US5302477A (en) 1992-08-21 1994-04-12 Intel Corporation Inverted phase-shifted reticle
US5538815A (en) 1992-09-14 1996-07-23 Kabushiki Kaisha Toshiba Method for designing phase-shifting masks with automatization capability
US5527645A (en) 1993-04-21 1996-06-18 Pati; Yagyensh C. Systematic method for production of phase-shifting photolithographic masks
JPH07111528A (en) 1993-10-12 1995-04-25 Matsushita Electric Ind Co Ltd Automatic answering telephone system
US5424154A (en) 1993-12-10 1995-06-13 Intel Corporation Lithographic emhancement method and apparatus for randomly spaced structures
JP3393926B2 (en) 1993-12-28 2003-04-07 株式会社東芝 Photomask design method and apparatus
EP0674223B1 (en) 1994-02-14 1997-05-02 International Business Machines Corporation An attenuating phase-shift mask structure and fabrication method
US5539567A (en) 1994-06-16 1996-07-23 Texas Instruments Incorporated Photolithographic technique and illuminator using real-time addressable phase shift light shift
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5538833A (en) 1994-08-03 1996-07-23 International Business Machines Corporation High resolution phase edge lithography without the need for a trim mask
US5537648A (en) 1994-08-15 1996-07-16 International Business Machines Corporation Geometric autogeneration of "hard" phase-shift designs for VLSI
US5496666A (en) 1994-10-27 1996-03-05 Chartered Semiconductor Manufacturing Pte Ltd. Contact hole mask for semiconductor fabrication
US5565286A (en) 1994-11-17 1996-10-15 International Business Machines Corporation Combined attenuated-alternating phase shifting mask structure and fabrication methods therefor
US5472814A (en) 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
KR0158904B1 (en) 1994-12-02 1999-02-01 김주용 Contact mask
US5523186A (en) 1994-12-16 1996-06-04 International Business Machines Corporation Split and cover technique for phase shifting photolithography
JP3273456B2 (en) 1995-02-24 2002-04-08 アルプス電気株式会社 Motor driven slide type variable resistor
US5532090A (en) 1995-03-01 1996-07-02 Intel Corporation Method and apparatus for enhanced contact and via lithography
US5595843A (en) 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
JP2638561B2 (en) 1995-05-10 1997-08-06 株式会社日立製作所 Mask formation method
JPH0950951A (en) * 1995-08-04 1997-02-18 Nikon Corp Lithography method and lithography apparatus
KR0161879B1 (en) 1995-09-25 1999-01-15 문정환 The structure of phase shift mask and manufacture therefrom
JP2917879B2 (en) 1995-10-31 1999-07-12 日本電気株式会社 Photomask and manufacturing method thereof
US6185727B1 (en) 1995-12-12 2001-02-06 International Business Machines Corporation Design verification for asymmetric phase shift mask layouts
US5885734A (en) 1996-08-15 1999-03-23 Micron Technology, Inc. Process for modifying a hierarchical mask layout
US5994002A (en) 1996-09-06 1999-11-30 Matsushita Electric Industrial Co., Ltd. Photo mask and pattern forming method
JP3518275B2 (en) 1996-09-06 2004-04-12 松下電器産業株式会社 Photomask and pattern forming method
WO1998012605A1 (en) 1996-09-18 1998-03-26 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5923562A (en) 1996-10-18 1999-07-13 International Business Machines Corporation Method for automatically eliminating three way intersection design conflicts in phase edge, phase shift designs
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
JPH10207038A (en) 1997-01-28 1998-08-07 Matsushita Electric Ind Co Ltd Reticle and pattern forming method
US5883813A (en) 1997-03-04 1999-03-16 International Business Machines Corporation Automatic generation of phase shift masks using net coloring
US5923566A (en) 1997-03-25 1999-07-13 International Business Machines Corporation Phase shifted design verification routine
US6057063A (en) 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
US6040892A (en) * 1997-08-19 2000-03-21 Micron Technology, Inc. Multiple image reticle for forming layers
JP3101594B2 (en) 1997-11-06 2000-10-23 キヤノン株式会社 Exposure method and exposure apparatus
TW363147B (en) 1997-11-22 1999-07-01 United Microelectronics Corp Phase shifting mask
TW378281B (en) 1997-11-28 2000-01-01 United Microelectronics Corp Phase shift mask and method for manufacturing the same
US6077630A (en) 1998-01-08 2000-06-20 Micron Technology, Inc. Subresolution grating for attenuated phase shifting mask fabrication
US6083275A (en) 1998-01-09 2000-07-04 International Business Machines Corporation Optimized phase shift design migration
JP3307313B2 (en) 1998-01-23 2002-07-24 ソニー株式会社 Pattern generation method and apparatus
US6130012A (en) 1999-01-13 2000-10-10 Advanced Micro Devices, Inc. Ion beam milling to generate custom reticles
JP4115615B2 (en) * 1999-03-11 2008-07-09 株式会社東芝 Mask pattern design method
JP3335139B2 (en) * 1999-06-04 2002-10-15 キヤノン株式会社 Exposure method, exposure apparatus, and device manufacturing method
US6139994A (en) 1999-06-25 2000-10-31 Broeke; Doug Van Den Use of intersecting subresolution features for microlithography
US6251549B1 (en) 1999-07-19 2001-06-26 Marc David Levenson Generic phase shift mask
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
DE19957542C2 (en) * 1999-11-30 2002-01-10 Infineon Technologies Ag Alternating phase mask
US6338922B1 (en) 2000-05-08 2002-01-15 International Business Machines Corporation Optimized alternating phase shifted mask design
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6524752B1 (en) * 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6733929B2 (en) 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US7028285B2 (en) 2000-07-05 2006-04-11 Synopsys, Inc. Standard cell design incorporating phase information
US6978436B2 (en) 2000-07-05 2005-12-20 Synopsys, Inc. Design data format and hierarchy management for phase processing
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6901575B2 (en) 2000-10-25 2005-05-31 Numerical Technologies, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
WO2002073312A1 (en) 2001-03-08 2002-09-19 Numerical Technologies, Inc. Alternating phase shift masking for multiple levels of masking resolution
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BERMAN P ET AL: "OPTIMAL PHASE CONFLICT REMOVAL FOR LAYOUT OF DARK FIELD ATERNATING PHASE SHIFTING MASKS", IEEE TRANSACTIONS ON COMPUTER AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, IEEE INC. NEW YORK, US, vol. 19, no. 2, February 2000 (2000-02-01), pages 175 - 187, XP002935087, ISSN: 0278-0070 *
KAHNG A B ET AL: "New graph bipartizations for double-exposure, bright field alternating phase-shift mask layout", PROCEEDINGS OF THE ASP-DAC 2001. ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE 2001 (CAT. NO.01EX455), PROCEEDINGS OF THE ASP-DAC 2001. ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE 2001, YOKOHAMA, JAPAN, 30 JAN.-2 FEB. 2001, 2001, Piscataway, NJ, USA, IEEE, USA, pages 133 - 138, XP010537792, ISBN: 0-7803-6633-6 *
OHNUMA H ET AL: "Automatic alternative phase shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 mu m", PHOTOMASK AND X-RAY MASK TECHNOLOGY V, KAWASAKI, JAPAN, 9-10 APRIL 1998, vol. 3412, Proceedings of the SPIE - The International Society for Optical Engineering, 1998, SPIE-Int. Soc. Opt. Eng, USA, pages 206 - 213, XP002252217, ISSN: 0277-786X *

Also Published As

Publication number Publication date
JP2005517969A (en) 2005-06-16
JP4505218B2 (en) 2010-07-21
EP1393129B1 (en) 2013-05-08
US7083879B2 (en) 2006-08-01
US20040202965A1 (en) 2004-10-14
CN1636165A (en) 2005-07-06
US7169515B2 (en) 2007-01-30
EP1393129A2 (en) 2004-03-03
WO2002101465A2 (en) 2002-12-19
CN100535745C (en) 2009-09-02
AU2002310374A1 (en) 2002-12-23
US20020197543A1 (en) 2002-12-26

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